JP4929150B2 - 静電チャック及び基板温調固定装置 - Google Patents

静電チャック及び基板温調固定装置 Download PDF

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Publication number
JP4929150B2
JP4929150B2 JP2007337691A JP2007337691A JP4929150B2 JP 4929150 B2 JP4929150 B2 JP 4929150B2 JP 2007337691 A JP2007337691 A JP 2007337691A JP 2007337691 A JP2007337691 A JP 2007337691A JP 4929150 B2 JP4929150 B2 JP 4929150B2
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Japan
Prior art keywords
substrate
electrostatic chuck
base
base plate
gas
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JP2007337691A
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English (en)
Japanese (ja)
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JP2009158829A5 (enExample
JP2009158829A (ja
Inventor
直人 渡部
忠義 吉川
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Publication date
Application filed by Shinko Electric Industries Co Ltd filed Critical Shinko Electric Industries Co Ltd
Priority to JP2007337691A priority Critical patent/JP4929150B2/ja
Priority to US12/334,961 priority patent/US20090168292A1/en
Priority to CNA2008101766008A priority patent/CN101471279A/zh
Priority to KR1020080134767A priority patent/KR20090071489A/ko
Publication of JP2009158829A publication Critical patent/JP2009158829A/ja
Publication of JP2009158829A5 publication Critical patent/JP2009158829A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007337691A 2007-12-27 2007-12-27 静電チャック及び基板温調固定装置 Active JP4929150B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007337691A JP4929150B2 (ja) 2007-12-27 2007-12-27 静電チャック及び基板温調固定装置
US12/334,961 US20090168292A1 (en) 2007-12-27 2008-12-15 Electrostatic chuck and substrate temperature adjusting-fixing device
CNA2008101766008A CN101471279A (zh) 2007-12-27 2008-12-25 静电夹盘和基板温度调节固定装置
KR1020080134767A KR20090071489A (ko) 2007-12-27 2008-12-26 정전척 및 기판 온도조절-고정장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007337691A JP4929150B2 (ja) 2007-12-27 2007-12-27 静電チャック及び基板温調固定装置

Publications (3)

Publication Number Publication Date
JP2009158829A JP2009158829A (ja) 2009-07-16
JP2009158829A5 JP2009158829A5 (enExample) 2010-11-25
JP4929150B2 true JP4929150B2 (ja) 2012-05-09

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ID=40798015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007337691A Active JP4929150B2 (ja) 2007-12-27 2007-12-27 静電チャック及び基板温調固定装置

Country Status (4)

Country Link
US (1) US20090168292A1 (enExample)
JP (1) JP4929150B2 (enExample)
KR (1) KR20090071489A (enExample)
CN (1) CN101471279A (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2704683A1 (en) * 2010-05-28 2010-08-12 Ibm Canada Limited - Ibm Canada Limitee Grounded lid for micro-electronic assemblies
KR101585883B1 (ko) * 2010-10-29 2016-01-15 어플라이드 머티어리얼스, 인코포레이티드 물리적 기상 증착 챔버를 위한 증착 링 및 정전 척
US9082804B2 (en) * 2011-02-07 2015-07-14 Varian Semiconductor Equipment Associates, Inc. Triboelectric charge controlled electrostatic clamp
JP5505667B2 (ja) * 2011-09-30 2014-05-28 Ｔｏｔｏ株式会社 交流駆動静電チャック
JP5785862B2 (ja) * 2011-11-30 2015-09-30 新光電気工業株式会社 静電チャック及びその製造方法、基板温調固定装置
JP2014049685A (ja) * 2012-09-03 2014-03-17 Ngk Spark Plug Co Ltd 半導体製造用部品
JP2014138164A (ja) * 2013-01-18 2014-07-28 Sumitomo Osaka Cement Co Ltd 静電チャック装置
CN104854511B (zh) * 2013-02-07 2017-08-25 Asml控股股份有限公司 光刻设备和方法
CN103594553B (zh) * 2013-10-23 2015-10-28 中国电子科技集团公司第四十八研究所 一种阵列式硅片装载靶盘
JP5811513B2 (ja) * 2014-03-27 2015-11-11 Toto株式会社 静電チャック
WO2016013589A1 (ja) * 2014-07-22 2016-01-28 京セラ株式会社 載置用部材
US9753463B2 (en) 2014-09-12 2017-09-05 Applied Materials, Inc. Increasing the gas efficiency for an electrostatic chuck
JP6877133B2 (ja) * 2016-03-28 2021-05-26 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US20170278730A1 (en) * 2016-03-28 2017-09-28 Hitachi High-Technologies Corporation Plasma processing apparatus and plasma processing method
JP6903525B2 (ja) * 2017-04-19 2021-07-14 日本特殊陶業株式会社 セラミックス部材
KR102188779B1 (ko) * 2018-10-15 2020-12-08 세메스 주식회사 기판 지지 장치 및 그 제조방법
WO2020167451A1 (en) * 2019-02-12 2020-08-20 Lam Research Corporation Electrostatic chuck with ceramic monolithic body
US12300473B2 (en) * 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
CN110246745B (zh) * 2019-05-17 2021-12-21 苏州珂玛材料科技股份有限公司 一种等离子体处理装置及静电卡盘与静电卡盘的制造方法
JP7386624B2 (ja) * 2019-06-14 2023-11-27 日本特殊陶業株式会社 保持装置および保持装置の製造方法
CN110289241B (zh) * 2019-07-04 2022-03-22 北京北方华创微电子装备有限公司 静电卡盘及其制作方法、工艺腔室和半导体处理设备
KR20210057384A (ko) * 2019-11-12 2021-05-21 주식회사 미코세라믹스 정전척
US12189310B2 (en) 2019-12-31 2025-01-07 Asml Holding N.V. Systems and methods for manufacturing a double-sided electrostatic clamp
US11594401B2 (en) * 2020-02-25 2023-02-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure
US11450546B2 (en) * 2020-04-09 2022-09-20 Applied Materials, Inc. Semiconductor substrate support with internal channels
EP3923077A1 (en) * 2020-06-11 2021-12-15 ASML Netherlands B.V. Object holder, electrostatic sheet and method for making an electrostatic sheet
JP7488712B2 (ja) * 2020-07-22 2024-05-22 デンカ株式会社 セラミック板及びその製造方法、セラミック焼結体の体積抵抗率の調整方法
CN114695048A (zh) * 2020-12-30 2022-07-01 中微半导体设备(上海)股份有限公司 下电极组件和包含下电极组件的等离子体处理装置
US12272585B2 (en) * 2021-04-27 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer chuck structure with holes in upper surface to improve temperature uniformity
JP7707050B2 (ja) * 2021-12-17 2025-07-14 日本特殊陶業株式会社 保持装置
JP7645838B2 (ja) * 2022-03-31 2025-03-14 日本碍子株式会社 ウエハ載置台
JP7759834B2 (ja) * 2022-03-31 2025-10-24 日本碍子株式会社 ウエハ載置台
WO2024004147A1 (ja) * 2022-06-30 2024-01-04 日本碍子株式会社 半導体製造装置用部材
JP7515017B1 (ja) * 2022-10-14 2024-07-11 日本碍子株式会社 ウエハ載置台
WO2024224444A1 (ja) * 2023-04-24 2024-10-31 日本碍子株式会社 ウエハ載置台
KR102752082B1 (ko) 2023-12-12 2025-01-10 주식회사 미코세라믹스 퍼지 가스 유로를 구비하는 서셉터

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271352B2 (ja) * 1993-01-13 2002-04-02 ソニー株式会社 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置
JPH1131736A (ja) * 1997-07-11 1999-02-02 Anelva Corp 半導体製造装置用静電吸着ステージ
JP3980187B2 (ja) * 1998-07-24 2007-09-26 日本碍子株式会社 半導体保持装置、その製造方法およびその使用方法
US6259592B1 (en) * 1998-11-19 2001-07-10 Applied Materials, Inc. Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same
KR100511854B1 (ko) * 2002-06-18 2005-09-02 아네르바 가부시키가이샤 정전 흡착 장치
US7072165B2 (en) * 2003-08-18 2006-07-04 Axcelis Technologies, Inc. MEMS based multi-polar electrostatic chuck
JP4292574B2 (ja) * 2003-09-30 2009-07-08 Ｔｏｔｏ株式会社 静電チャックとその製造方法
JP2005166821A (ja) * 2003-12-01 2005-06-23 Toshiba Ceramics Co Ltd ウェーハ保持用静電チャック及びその製造方法
JP4768333B2 (ja) * 2005-06-29 2011-09-07 日本特殊陶業株式会社 静電チャック
US7672110B2 (en) * 2005-08-29 2010-03-02 Applied Materials, Inc. Electrostatic chuck having textured contact surface

Also Published As

Publication number Publication date
US20090168292A1 (en) 2009-07-02
KR20090071489A (ko) 2009-07-01
CN101471279A (zh) 2009-07-01
JP2009158829A (ja) 2009-07-16

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