CN101471279A - 静电夹盘和基板温度调节固定装置 - Google Patents
静电夹盘和基板温度调节固定装置 Download PDFInfo
- Publication number
- CN101471279A CN101471279A CNA2008101766008A CN200810176600A CN101471279A CN 101471279 A CN101471279 A CN 101471279A CN A2008101766008 A CNA2008101766008 A CN A2008101766008A CN 200810176600 A CN200810176600 A CN 200810176600A CN 101471279 A CN101471279 A CN 101471279A
- Authority
- CN
- China
- Prior art keywords
- substrate
- matrix
- electrostatic chuck
- fixing device
- temperature adjusting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims description 207
- 239000007789 gas Substances 0.000 claims abstract description 182
- 239000011261 inert gas Substances 0.000 claims abstract description 38
- 239000011159 matrix material Substances 0.000 claims description 115
- 238000009413 insulation Methods 0.000 claims description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 239000004020 conductor Substances 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 238000001179 sorption measurement Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 40
- 239000012790 adhesive layer Substances 0.000 description 28
- 239000000498 cooling water Substances 0.000 description 21
- 230000008676 import Effects 0.000 description 17
- 238000010891 electric arc Methods 0.000 description 14
- 238000007789 sealing Methods 0.000 description 14
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 238000003466 welding Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 11
- 238000010894 electron beam technology Methods 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 235000019628 coolness Nutrition 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000803 paradoxical effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002156 adsorbate Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007337691A JP4929150B2 (ja) | 2007-12-27 | 2007-12-27 | 静電チャック及び基板温調固定装置 |
| JP2007337691 | 2007-12-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101471279A true CN101471279A (zh) | 2009-07-01 |
Family
ID=40798015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101766008A Pending CN101471279A (zh) | 2007-12-27 | 2008-12-25 | 静电夹盘和基板温度调节固定装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090168292A1 (enExample) |
| JP (1) | JP4929150B2 (enExample) |
| KR (1) | KR20090071489A (enExample) |
| CN (1) | CN101471279A (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103594553A (zh) * | 2013-10-23 | 2014-02-19 | 中国电子科技集团公司第四十八研究所 | 一种阵列式硅片装载靶盘 |
| CN106575635A (zh) * | 2014-09-12 | 2017-04-19 | 应用材料公司 | 增加用于静电夹盘的气体效率 |
| CN108359957A (zh) * | 2010-10-29 | 2018-08-03 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
| CN110246745A (zh) * | 2019-05-17 | 2019-09-17 | 苏州珂玛材料科技股份有限公司 | 一种等离子体处理装置及静电卡盘与静电卡盘的制造方法 |
| CN110289241A (zh) * | 2019-07-04 | 2019-09-27 | 北京北方华创微电子装备有限公司 | 静电卡盘及其制作方法、工艺腔室和半导体处理设备 |
| TWI695443B (zh) * | 2017-04-19 | 2020-06-01 | 日商日本特殊陶業股份有限公司 | 陶瓷構件 |
| CN114695048A (zh) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 下电极组件和包含下电极组件的等离子体处理装置 |
| CN114927454A (zh) * | 2021-04-27 | 2022-08-19 | 台湾积体电路制造股份有限公司 | 半导体处理机台及其使用方法 |
| CN120149192A (zh) * | 2023-12-12 | 2025-06-13 | 美科陶瓷科技有限公司 | 具有吹扫气体流路的基座 |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2704683A1 (en) * | 2010-05-28 | 2010-08-12 | Ibm Canada Limited - Ibm Canada Limitee | Grounded lid for micro-electronic assemblies |
| US9082804B2 (en) * | 2011-02-07 | 2015-07-14 | Varian Semiconductor Equipment Associates, Inc. | Triboelectric charge controlled electrostatic clamp |
| JP5505667B2 (ja) * | 2011-09-30 | 2014-05-28 | Toto株式会社 | 交流駆動静電チャック |
| JP5785862B2 (ja) * | 2011-11-30 | 2015-09-30 | 新光電気工業株式会社 | 静電チャック及びその製造方法、基板温調固定装置 |
| JP2014049685A (ja) * | 2012-09-03 | 2014-03-17 | Ngk Spark Plug Co Ltd | 半導体製造用部品 |
| JP2014138164A (ja) * | 2013-01-18 | 2014-07-28 | Sumitomo Osaka Cement Co Ltd | 静電チャック装置 |
| CN104854511B (zh) * | 2013-02-07 | 2017-08-25 | Asml控股股份有限公司 | 光刻设备和方法 |
| JP5811513B2 (ja) * | 2014-03-27 | 2015-11-11 | Toto株式会社 | 静電チャック |
| WO2016013589A1 (ja) * | 2014-07-22 | 2016-01-28 | 京セラ株式会社 | 載置用部材 |
| JP6877133B2 (ja) * | 2016-03-28 | 2021-05-26 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US20170278730A1 (en) * | 2016-03-28 | 2017-09-28 | Hitachi High-Technologies Corporation | Plasma processing apparatus and plasma processing method |
| KR102188779B1 (ko) * | 2018-10-15 | 2020-12-08 | 세메스 주식회사 | 기판 지지 장치 및 그 제조방법 |
| WO2020167451A1 (en) * | 2019-02-12 | 2020-08-20 | Lam Research Corporation | Electrostatic chuck with ceramic monolithic body |
| US12300473B2 (en) * | 2019-03-08 | 2025-05-13 | Applied Materials, Inc. | Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber |
| JP7386624B2 (ja) * | 2019-06-14 | 2023-11-27 | 日本特殊陶業株式会社 | 保持装置および保持装置の製造方法 |
| KR20210057384A (ko) * | 2019-11-12 | 2021-05-21 | 주식회사 미코세라믹스 | 정전척 |
| US12189310B2 (en) | 2019-12-31 | 2025-01-07 | Asml Holding N.V. | Systems and methods for manufacturing a double-sided electrostatic clamp |
| US11594401B2 (en) * | 2020-02-25 | 2023-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing semiconductor wafer with wafer chuck having fluid guiding structure |
| US11450546B2 (en) * | 2020-04-09 | 2022-09-20 | Applied Materials, Inc. | Semiconductor substrate support with internal channels |
| EP3923077A1 (en) * | 2020-06-11 | 2021-12-15 | ASML Netherlands B.V. | Object holder, electrostatic sheet and method for making an electrostatic sheet |
| JP7488712B2 (ja) * | 2020-07-22 | 2024-05-22 | デンカ株式会社 | セラミック板及びその製造方法、セラミック焼結体の体積抵抗率の調整方法 |
| JP7707050B2 (ja) * | 2021-12-17 | 2025-07-14 | 日本特殊陶業株式会社 | 保持装置 |
| JP7645838B2 (ja) * | 2022-03-31 | 2025-03-14 | 日本碍子株式会社 | ウエハ載置台 |
| JP7759834B2 (ja) * | 2022-03-31 | 2025-10-24 | 日本碍子株式会社 | ウエハ載置台 |
| WO2024004147A1 (ja) * | 2022-06-30 | 2024-01-04 | 日本碍子株式会社 | 半導体製造装置用部材 |
| JP7515017B1 (ja) * | 2022-10-14 | 2024-07-11 | 日本碍子株式会社 | ウエハ載置台 |
| WO2024224444A1 (ja) * | 2023-04-24 | 2024-10-31 | 日本碍子株式会社 | ウエハ載置台 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3271352B2 (ja) * | 1993-01-13 | 2002-04-02 | ソニー株式会社 | 静電チャック及びその作製方法並びに基板処理装置及び基板搬送装置 |
| JPH1131736A (ja) * | 1997-07-11 | 1999-02-02 | Anelva Corp | 半導体製造装置用静電吸着ステージ |
| JP3980187B2 (ja) * | 1998-07-24 | 2007-09-26 | 日本碍子株式会社 | 半導体保持装置、その製造方法およびその使用方法 |
| US6259592B1 (en) * | 1998-11-19 | 2001-07-10 | Applied Materials, Inc. | Apparatus for retaining a workpiece upon a workpiece support and method of manufacturing same |
| KR100511854B1 (ko) * | 2002-06-18 | 2005-09-02 | 아네르바 가부시키가이샤 | 정전 흡착 장치 |
| US7072165B2 (en) * | 2003-08-18 | 2006-07-04 | Axcelis Technologies, Inc. | MEMS based multi-polar electrostatic chuck |
| JP4292574B2 (ja) * | 2003-09-30 | 2009-07-08 | Toto株式会社 | 静電チャックとその製造方法 |
| JP2005166821A (ja) * | 2003-12-01 | 2005-06-23 | Toshiba Ceramics Co Ltd | ウェーハ保持用静電チャック及びその製造方法 |
| JP4768333B2 (ja) * | 2005-06-29 | 2011-09-07 | 日本特殊陶業株式会社 | 静電チャック |
| US7672110B2 (en) * | 2005-08-29 | 2010-03-02 | Applied Materials, Inc. | Electrostatic chuck having textured contact surface |
-
2007
- 2007-12-27 JP JP2007337691A patent/JP4929150B2/ja active Active
-
2008
- 2008-12-15 US US12/334,961 patent/US20090168292A1/en not_active Abandoned
- 2008-12-25 CN CNA2008101766008A patent/CN101471279A/zh active Pending
- 2008-12-26 KR KR1020080134767A patent/KR20090071489A/ko not_active Withdrawn
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108359957A (zh) * | 2010-10-29 | 2018-08-03 | 应用材料公司 | 用于物理气相沉积腔室的沉积环及静电夹盘 |
| CN103594553B (zh) * | 2013-10-23 | 2015-10-28 | 中国电子科技集团公司第四十八研究所 | 一种阵列式硅片装载靶盘 |
| CN103594553A (zh) * | 2013-10-23 | 2014-02-19 | 中国电子科技集团公司第四十八研究所 | 一种阵列式硅片装载靶盘 |
| CN106575635B (zh) * | 2014-09-12 | 2019-12-24 | 应用材料公司 | 增加用于静电夹盘的气体效率 |
| CN106575635A (zh) * | 2014-09-12 | 2017-04-19 | 应用材料公司 | 增加用于静电夹盘的气体效率 |
| US11747834B2 (en) | 2014-09-12 | 2023-09-05 | Applied Materials, Inc. | Increasing the gas efficiency for an electrostatic chuck |
| US12493303B2 (en) | 2014-09-12 | 2025-12-09 | Applied Materials, Inc. | Increasing the gas efficiency for an electrostatic chuck |
| TWI695443B (zh) * | 2017-04-19 | 2020-06-01 | 日商日本特殊陶業股份有限公司 | 陶瓷構件 |
| CN110246745A (zh) * | 2019-05-17 | 2019-09-17 | 苏州珂玛材料科技股份有限公司 | 一种等离子体处理装置及静电卡盘与静电卡盘的制造方法 |
| CN110246745B (zh) * | 2019-05-17 | 2021-12-21 | 苏州珂玛材料科技股份有限公司 | 一种等离子体处理装置及静电卡盘与静电卡盘的制造方法 |
| CN110289241A (zh) * | 2019-07-04 | 2019-09-27 | 北京北方华创微电子装备有限公司 | 静电卡盘及其制作方法、工艺腔室和半导体处理设备 |
| CN110289241B (zh) * | 2019-07-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 静电卡盘及其制作方法、工艺腔室和半导体处理设备 |
| CN114695048A (zh) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | 下电极组件和包含下电极组件的等离子体处理装置 |
| CN114927454A (zh) * | 2021-04-27 | 2022-08-19 | 台湾积体电路制造股份有限公司 | 半导体处理机台及其使用方法 |
| CN120149192A (zh) * | 2023-12-12 | 2025-06-13 | 美科陶瓷科技有限公司 | 具有吹扫气体流路的基座 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20090168292A1 (en) | 2009-07-02 |
| JP4929150B2 (ja) | 2012-05-09 |
| KR20090071489A (ko) | 2009-07-01 |
| JP2009158829A (ja) | 2009-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20090701 |