JP4893730B2 - 極端紫外光光源装置 - Google Patents
極端紫外光光源装置 Download PDFInfo
- Publication number
- JP4893730B2 JP4893730B2 JP2008329570A JP2008329570A JP4893730B2 JP 4893730 B2 JP4893730 B2 JP 4893730B2 JP 2008329570 A JP2008329570 A JP 2008329570A JP 2008329570 A JP2008329570 A JP 2008329570A JP 4893730 B2 JP4893730 B2 JP 4893730B2
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- JP
- Japan
- Prior art keywords
- raw material
- energy beam
- discharge
- recess
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002994 raw material Substances 0.000 claims abstract description 139
- 239000000463 material Substances 0.000 claims description 23
- 230000001678 irradiating effect Effects 0.000 claims description 16
- 239000000155 melt Substances 0.000 claims description 9
- 230000008016 vaporization Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 41
- 230000005855 radiation Effects 0.000 abstract description 9
- 239000003990 capacitor Substances 0.000 description 30
- 230000002093 peripheral effect Effects 0.000 description 22
- 239000007787 solid Substances 0.000 description 12
- 239000011888 foil Substances 0.000 description 10
- 230000006835 compression Effects 0.000 description 6
- 238000007906 compression Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 229910000080 stannane Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—Production of X-ray radiation generated from plasma
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008329570A JP4893730B2 (ja) | 2008-12-25 | 2008-12-25 | 極端紫外光光源装置 |
EP20090015807 EP2203033B1 (fr) | 2008-12-25 | 2009-12-21 | Dispositif de source lumineuse à rayonnement ultraviolet extrême |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008329570A JP4893730B2 (ja) | 2008-12-25 | 2008-12-25 | 極端紫外光光源装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010153563A JP2010153563A (ja) | 2010-07-08 |
JP4893730B2 true JP4893730B2 (ja) | 2012-03-07 |
Family
ID=42140034
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008329570A Active JP4893730B2 (ja) | 2008-12-25 | 2008-12-25 | 極端紫外光光源装置 |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP2203033B1 (fr) |
JP (1) | JP4893730B2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4255123A1 (fr) | 2022-03-30 | 2023-10-04 | Ushio Denki Kabushiki Kaisha | Appareil de source lumineuse |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010047419B4 (de) | 2010-10-01 | 2013-09-05 | Xtreme Technologies Gmbh | Verfahren und Vorrichtung zur Erzeugung von EUV-Strahlung aus einem Gasentladungsplasma |
JP5724986B2 (ja) * | 2012-10-30 | 2015-05-27 | ウシオ電機株式会社 | 放電電極 |
DE102013000407B4 (de) * | 2013-01-11 | 2020-03-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Verbesserung der Benetzbarkeit einer rotierenden Elektrode in einer Gasentladungslampe |
JP6089955B2 (ja) * | 2013-05-20 | 2017-03-08 | 株式会社Ihi | プラズマ光源 |
RU2670273C2 (ru) * | 2017-11-24 | 2018-10-22 | Общество с ограниченной ответственностью "РнД-ИСАН" | Устройство и способ для генерации излучения из лазерной плазмы |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2897005B1 (ja) * | 1998-02-27 | 1999-05-31 | 工業技術院長 | レーザプラズマ光源及びこれを用いた輻射線発生方法 |
JP4052155B2 (ja) | 2003-03-17 | 2008-02-27 | ウシオ電機株式会社 | 極端紫外光放射源及び半導体露光装置 |
DE10359464A1 (de) * | 2003-12-17 | 2005-07-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Erzeugen von insbesondere EUV-Strahlung und/oder weicher Röntgenstrahlung |
RU2278483C2 (ru) * | 2004-04-14 | 2006-06-20 | Владимир Михайлович Борисов | Эуф источник с вращающимися электродами и способ получения эуф излучения из газоразрядной плазмы |
JP4904809B2 (ja) * | 2005-12-28 | 2012-03-28 | ウシオ電機株式会社 | 極端紫外光光源装置 |
JP5149514B2 (ja) * | 2007-02-20 | 2013-02-20 | ギガフォトン株式会社 | 極端紫外光源装置 |
EP1976344B1 (fr) * | 2007-03-28 | 2011-04-20 | Tokyo Institute Of Technology | Source lumineuse d'ultraviolets extrêmes et procédé pour générer un rayonnement UV extrême |
JP2008270149A (ja) * | 2007-03-28 | 2008-11-06 | Tokyo Institute Of Technology | 極端紫外光光源装置および極端紫外光発生方法 |
JP2009087807A (ja) * | 2007-10-01 | 2009-04-23 | Tokyo Institute Of Technology | 極端紫外光発生方法及び極端紫外光光源装置 |
-
2008
- 2008-12-25 JP JP2008329570A patent/JP4893730B2/ja active Active
-
2009
- 2009-12-21 EP EP20090015807 patent/EP2203033B1/fr active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4255123A1 (fr) | 2022-03-30 | 2023-10-04 | Ushio Denki Kabushiki Kaisha | Appareil de source lumineuse |
Also Published As
Publication number | Publication date |
---|---|
EP2203033A3 (fr) | 2010-09-08 |
EP2203033A2 (fr) | 2010-06-30 |
EP2203033B1 (fr) | 2014-09-10 |
JP2010153563A (ja) | 2010-07-08 |
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