JP4886767B2 - 多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法 - Google Patents

多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法 Download PDF

Info

Publication number
JP4886767B2
JP4886767B2 JP2008504045A JP2008504045A JP4886767B2 JP 4886767 B2 JP4886767 B2 JP 4886767B2 JP 2008504045 A JP2008504045 A JP 2008504045A JP 2008504045 A JP2008504045 A JP 2008504045A JP 4886767 B2 JP4886767 B2 JP 4886767B2
Authority
JP
Japan
Prior art keywords
sin film
substrate
tensile stress
electromagnetic radiation
gpa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008504045A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008536303A5 (https=
JP2008536303A (ja
Inventor
真信 井下田
ワイダ，コリー
リューシンク，ヘルト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2008536303A publication Critical patent/JP2008536303A/ja
Publication of JP2008536303A5 publication Critical patent/JP2008536303A5/ja
Application granted granted Critical
Publication of JP4886767B2 publication Critical patent/JP4886767B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008504045A 2005-03-29 2006-02-16 多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法 Expired - Fee Related JP4886767B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/091,755 US7300891B2 (en) 2005-03-29 2005-03-29 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
US11/091,755 2005-03-29
PCT/US2006/005433 WO2006104583A2 (en) 2005-03-29 2006-02-16 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation

Publications (3)

Publication Number Publication Date
JP2008536303A JP2008536303A (ja) 2008-09-04
JP2008536303A5 JP2008536303A5 (https=) 2009-04-02
JP4886767B2 true JP4886767B2 (ja) 2012-02-29

Family

ID=37053842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008504045A Expired - Fee Related JP4886767B2 (ja) 2005-03-29 2006-02-16 多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法

Country Status (4)

Country Link
US (1) US7300891B2 (https=)
JP (1) JP4886767B2 (https=)
TW (1) TWI311809B (https=)
WO (1) WO2006104583A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452977B1 (ko) 2014-02-27 2014-10-22 연세대학교 산학협력단 트랜지스터, 및 트랜지스터의 스트레인 인가 방법

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7510982B1 (en) 2005-01-31 2009-03-31 Novellus Systems, Inc. Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US8398816B1 (en) 2006-03-28 2013-03-19 Novellus Systems, Inc. Method and apparatuses for reducing porogen accumulation from a UV-cure chamber
JP2007324391A (ja) * 2006-06-01 2007-12-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20070296027A1 (en) * 2006-06-21 2007-12-27 International Business Machines Corporation Cmos devices comprising a continuous stressor layer with regions of opposite stresses, and methods of fabricating the same
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US7700499B2 (en) * 2007-01-19 2010-04-20 Freescale Semiconductor, Inc. Multilayer silicon nitride deposition for a semiconductor device
WO2008117431A1 (ja) 2007-03-27 2008-10-02 Fujitsu Microelectronics Limited 半導体装置および半導体装置の製造方法
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
US7622162B1 (en) * 2007-06-07 2009-11-24 Novellus Systems, Inc. UV treatment of STI films for increasing tensile stress
US8211510B1 (en) 2007-08-31 2012-07-03 Novellus Systems, Inc. Cascaded cure approach to fabricate highly tensile silicon nitride films
US8426778B1 (en) 2007-12-10 2013-04-23 Novellus Systems, Inc. Tunable-illumination reflector optics for UV cure system
JP5309619B2 (ja) * 2008-03-07 2013-10-09 ソニー株式会社 半導体装置およびその製造方法
KR101017043B1 (ko) * 2008-08-19 2011-02-23 매그나칩 반도체 유한회사 반도체 소자 및 그의 제조방법
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
US8298876B2 (en) * 2009-03-27 2012-10-30 International Business Machines Corporation Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices
US8236709B2 (en) * 2009-07-29 2012-08-07 International Business Machines Corporation Method of fabricating a device using low temperature anneal processes, a device and design structure
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
EP3649670B1 (en) * 2017-07-06 2024-12-11 Applied Materials, Inc. Methods of forming a stack of multiple deposited semiconductor layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203894A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
JPH0978245A (ja) * 1995-09-08 1997-03-25 Canon Inc 薄膜形成方法
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6228563B1 (en) 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6740566B2 (en) 1999-09-17 2004-05-25 Advanced Micro Devices, Inc. Ultra-thin resist shallow trench process using high selectivity nitride etch
JP3425579B2 (ja) * 1999-12-08 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6485599B1 (en) 2000-07-11 2002-11-26 International Business Machines Corporation Curing of sealants using multiple frequencies of radiation
US6429135B1 (en) 2001-01-05 2002-08-06 United Microelectronics Corp. Method of reducing stress between a nitride silicon spacer and a substrate
US8288239B2 (en) 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
WO2003102724A2 (en) 2002-05-29 2003-12-11 Tokyo Electron Limited Method and system for data handling, storage and manipulation
US20050217799A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
JP2005310927A (ja) * 2004-04-20 2005-11-04 Toshiba Corp 紫外線照射による高品質シリコン窒化膜の成膜方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101452977B1 (ko) 2014-02-27 2014-10-22 연세대학교 산학협력단 트랜지스터, 및 트랜지스터의 스트레인 인가 방법

Also Published As

Publication number Publication date
WO2006104583A2 (en) 2006-10-05
TWI311809B (en) 2009-07-01
US20060226518A1 (en) 2006-10-12
WO2006104583A3 (en) 2007-11-08
JP2008536303A (ja) 2008-09-04
TW200723487A (en) 2007-06-16
US7300891B2 (en) 2007-11-27

Similar Documents

Publication Publication Date Title
JP4886767B2 (ja) 多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法
JP5219815B2 (ja) 引張応力を有するシリコン酸窒化膜を形成する方法
KR101350544B1 (ko) 스트레인드 실리콘 질화물막들의 형성 방법 및 이러한 막들을 포함하는 장치
KR101244832B1 (ko) 인장 응력 및 압축 응력을 받은 반도체용 재료
JP7685006B2 (ja) ３ｄｎａｎｄ応用のためのメモリセルの製造
US20060228898A1 (en) Method and system for forming a high-k dielectric layer
US9799768B2 (en) Semiconductor device and method for manufacturing same
JP2007088454A (ja) 制御可能な空間的変化を有する層を形成する方法及びシステム
JP2016528734A (ja) エピタキシャル成長に先立って基板表面を予洗浄するための方法及び装置
JP2006173327A (ja) 薄膜トランジスタとその製造方法および製造装置
CN101523558A (zh) 用于具有应变含锗层的器件的uv辅助电介质形成
JP4977686B2 (ja) 平行電磁放射線を用いて薄膜内の引張応力を増大させる方法
US8119540B2 (en) Method of forming a stressed passivation film using a microwave-assisted oxidation process
US7807586B2 (en) Method of forming a stressed passivation film using a non-ionizing electromagnetic radiation-assisted oxidation process
US7579287B2 (en) Surface treatment method, manufacturing method of semiconductor device, and manufacturing method of capacitive element
CN101330022B (zh) 制作高张力薄膜的方法及机台
JP4995807B2 (ja) 酸窒化層を形成する方法及びシステム
US7517814B2 (en) Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently
JP5199954B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090216

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110621

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110817

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110906

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111019

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111115

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111209

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141216

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

LAPS Cancellation because of no payment of annual fees