TWI311809B - Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation - Google Patents

Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation Download PDF

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Publication number
TWI311809B
TWI311809B TW095110675A TW95110675A TWI311809B TW I311809 B TWI311809 B TW I311809B TW 095110675 A TW095110675 A TW 095110675A TW 95110675 A TW95110675 A TW 95110675A TW I311809 B TWI311809 B TW I311809B
Authority
TW
Taiwan
Prior art keywords
tensile stress
substrate
increasing
film
sin film
Prior art date
Application number
TW095110675A
Other languages
English (en)
Chinese (zh)
Other versions
TW200723487A (en
Inventor
Masanobu Igeta
Cory Wajda
Gerrit J Leusink
Original Assignee
Tokyo Electron Limite
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limite filed Critical Tokyo Electron Limite
Publication of TW200723487A publication Critical patent/TW200723487A/zh
Application granted granted Critical
Publication of TWI311809B publication Critical patent/TWI311809B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/792—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions comprising applied insulating layers, e.g. stress liners
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
TW095110675A 2005-03-29 2006-03-28 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation TWI311809B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/091,755 US7300891B2 (en) 2005-03-29 2005-03-29 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation

Publications (2)

Publication Number Publication Date
TW200723487A TW200723487A (en) 2007-06-16
TWI311809B true TWI311809B (en) 2009-07-01

Family

ID=37053842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095110675A TWI311809B (en) 2005-03-29 2006-03-28 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation

Country Status (4)

Country Link
US (1) US7300891B2 (https=)
JP (1) JP4886767B2 (https=)
TW (1) TWI311809B (https=)
WO (1) WO2006104583A2 (https=)

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US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7510982B1 (en) 2005-01-31 2009-03-31 Novellus Systems, Inc. Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US8398816B1 (en) 2006-03-28 2013-03-19 Novellus Systems, Inc. Method and apparatuses for reducing porogen accumulation from a UV-cure chamber
JP2007324391A (ja) * 2006-06-01 2007-12-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20070296027A1 (en) * 2006-06-21 2007-12-27 International Business Machines Corporation Cmos devices comprising a continuous stressor layer with regions of opposite stresses, and methods of fabricating the same
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US7700499B2 (en) * 2007-01-19 2010-04-20 Freescale Semiconductor, Inc. Multilayer silicon nitride deposition for a semiconductor device
WO2008117431A1 (ja) 2007-03-27 2008-10-02 Fujitsu Microelectronics Limited 半導体装置および半導体装置の製造方法
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
US7622162B1 (en) * 2007-06-07 2009-11-24 Novellus Systems, Inc. UV treatment of STI films for increasing tensile stress
US8211510B1 (en) 2007-08-31 2012-07-03 Novellus Systems, Inc. Cascaded cure approach to fabricate highly tensile silicon nitride films
US8426778B1 (en) 2007-12-10 2013-04-23 Novellus Systems, Inc. Tunable-illumination reflector optics for UV cure system
JP5309619B2 (ja) * 2008-03-07 2013-10-09 ソニー株式会社 半導体装置およびその製造方法
KR101017043B1 (ko) * 2008-08-19 2011-02-23 매그나칩 반도체 유한회사 반도체 소자 및 그의 제조방법
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
US8298876B2 (en) * 2009-03-27 2012-10-30 International Business Machines Corporation Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices
US8236709B2 (en) * 2009-07-29 2012-08-07 International Business Machines Corporation Method of fabricating a device using low temperature anneal processes, a device and design structure
KR101452977B1 (ko) 2014-02-27 2014-10-22 연세대학교 산학협력단 트랜지스터, 및 트랜지스터의 스트레인 인가 방법
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
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JPH08203894A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
JPH0978245A (ja) * 1995-09-08 1997-03-25 Canon Inc 薄膜形成方法
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WO2003102724A2 (en) 2002-05-29 2003-12-11 Tokyo Electron Limited Method and system for data handling, storage and manipulation
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JP2005310927A (ja) * 2004-04-20 2005-11-04 Toshiba Corp 紫外線照射による高品質シリコン窒化膜の成膜方法

Also Published As

Publication number Publication date
WO2006104583A2 (en) 2006-10-05
JP4886767B2 (ja) 2012-02-29
US20060226518A1 (en) 2006-10-12
WO2006104583A3 (en) 2007-11-08
JP2008536303A (ja) 2008-09-04
TW200723487A (en) 2007-06-16
US7300891B2 (en) 2007-11-27

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