JP2008536303A5 - - Google Patents

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Publication number
JP2008536303A5
JP2008536303A5 JP2008504045A JP2008504045A JP2008536303A5 JP 2008536303 A5 JP2008536303 A5 JP 2008536303A5 JP 2008504045 A JP2008504045 A JP 2008504045A JP 2008504045 A JP2008504045 A JP 2008504045A JP 2008536303 A5 JP2008536303 A5 JP 2008536303A5
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JP
Japan
Prior art keywords
sin film
gpa
substrate
semiconductor device
tensile stress
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Application number
JP2008504045A
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English (en)
Japanese (ja)
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JP4886767B2 (ja
JP2008536303A (ja
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Publication date
Priority claimed from US11/091,755 external-priority patent/US7300891B2/en
Application filed filed Critical
Publication of JP2008536303A publication Critical patent/JP2008536303A/ja
Publication of JP2008536303A5 publication Critical patent/JP2008536303A5/ja
Application granted granted Critical
Publication of JP4886767B2 publication Critical patent/JP4886767B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2008504045A 2005-03-29 2006-02-16 多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法 Expired - Fee Related JP4886767B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/091,755 US7300891B2 (en) 2005-03-29 2005-03-29 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation
US11/091,755 2005-03-29
PCT/US2006/005433 WO2006104583A2 (en) 2005-03-29 2006-02-16 Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation

Publications (3)

Publication Number Publication Date
JP2008536303A JP2008536303A (ja) 2008-09-04
JP2008536303A5 true JP2008536303A5 (https=) 2009-04-02
JP4886767B2 JP4886767B2 (ja) 2012-02-29

Family

ID=37053842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008504045A Expired - Fee Related JP4886767B2 (ja) 2005-03-29 2006-02-16 多周波電磁放射線を用いて薄膜内の引張応力を増大させる方法

Country Status (4)

Country Link
US (1) US7300891B2 (https=)
JP (1) JP4886767B2 (https=)
TW (1) TWI311809B (https=)
WO (1) WO2006104583A2 (https=)

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US7253125B1 (en) 2004-04-16 2007-08-07 Novellus Systems, Inc. Method to improve mechanical strength of low-k dielectric film using modulated UV exposure
US9659769B1 (en) 2004-10-22 2017-05-23 Novellus Systems, Inc. Tensile dielectric films using UV curing
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7510982B1 (en) 2005-01-31 2009-03-31 Novellus Systems, Inc. Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles
US8980769B1 (en) 2005-04-26 2015-03-17 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8889233B1 (en) 2005-04-26 2014-11-18 Novellus Systems, Inc. Method for reducing stress in porous dielectric films
US8282768B1 (en) 2005-04-26 2012-10-09 Novellus Systems, Inc. Purging of porogen from UV cure chamber
US8454750B1 (en) 2005-04-26 2013-06-04 Novellus Systems, Inc. Multi-station sequential curing of dielectric films
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US8398816B1 (en) 2006-03-28 2013-03-19 Novellus Systems, Inc. Method and apparatuses for reducing porogen accumulation from a UV-cure chamber
JP2007324391A (ja) * 2006-06-01 2007-12-13 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US20070296027A1 (en) * 2006-06-21 2007-12-27 International Business Machines Corporation Cmos devices comprising a continuous stressor layer with regions of opposite stresses, and methods of fabricating the same
US8465991B2 (en) 2006-10-30 2013-06-18 Novellus Systems, Inc. Carbon containing low-k dielectric constant recovery using UV treatment
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US10037905B2 (en) 2009-11-12 2018-07-31 Novellus Systems, Inc. UV and reducing treatment for K recovery and surface clean in semiconductor processing
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US7700499B2 (en) * 2007-01-19 2010-04-20 Freescale Semiconductor, Inc. Multilayer silicon nitride deposition for a semiconductor device
WO2008117431A1 (ja) 2007-03-27 2008-10-02 Fujitsu Microelectronics Limited 半導体装置および半導体装置の製造方法
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
US7622162B1 (en) * 2007-06-07 2009-11-24 Novellus Systems, Inc. UV treatment of STI films for increasing tensile stress
US8211510B1 (en) 2007-08-31 2012-07-03 Novellus Systems, Inc. Cascaded cure approach to fabricate highly tensile silicon nitride films
US8426778B1 (en) 2007-12-10 2013-04-23 Novellus Systems, Inc. Tunable-illumination reflector optics for UV cure system
JP5309619B2 (ja) * 2008-03-07 2013-10-09 ソニー株式会社 半導体装置およびその製造方法
KR101017043B1 (ko) * 2008-08-19 2011-02-23 매그나칩 반도체 유한회사 반도체 소자 및 그의 제조방법
US9050623B1 (en) 2008-09-12 2015-06-09 Novellus Systems, Inc. Progressive UV cure
US8298876B2 (en) * 2009-03-27 2012-10-30 International Business Machines Corporation Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices
US8236709B2 (en) * 2009-07-29 2012-08-07 International Business Machines Corporation Method of fabricating a device using low temperature anneal processes, a device and design structure
KR101452977B1 (ko) 2014-02-27 2014-10-22 연세대학교 산학협력단 트랜지스터, 및 트랜지스터의 스트레인 인가 방법
US10388546B2 (en) 2015-11-16 2019-08-20 Lam Research Corporation Apparatus for UV flowable dielectric
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
EP3649670B1 (en) * 2017-07-06 2024-12-11 Applied Materials, Inc. Methods of forming a stack of multiple deposited semiconductor layers

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JPH08203894A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
JPH0978245A (ja) * 1995-09-08 1997-03-25 Canon Inc 薄膜形成方法
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6228563B1 (en) 1999-09-17 2001-05-08 Gasonics International Corporation Method and apparatus for removing post-etch residues and other adherent matrices
US6740566B2 (en) 1999-09-17 2004-05-25 Advanced Micro Devices, Inc. Ultra-thin resist shallow trench process using high selectivity nitride etch
JP3425579B2 (ja) * 1999-12-08 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6485599B1 (en) 2000-07-11 2002-11-26 International Business Machines Corporation Curing of sealants using multiple frequencies of radiation
US6429135B1 (en) 2001-01-05 2002-08-06 United Microelectronics Corp. Method of reducing stress between a nitride silicon spacer and a substrate
US8288239B2 (en) 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
WO2003102724A2 (en) 2002-05-29 2003-12-11 Tokyo Electron Limited Method and system for data handling, storage and manipulation
US20050217799A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
JP2005310927A (ja) * 2004-04-20 2005-11-04 Toshiba Corp 紫外線照射による高品質シリコン窒化膜の成膜方法

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