JP2008535244A5 - - Google Patents

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Publication number
JP2008535244A5
JP2008535244A5 JP2008504043A JP2008504043A JP2008535244A5 JP 2008535244 A5 JP2008535244 A5 JP 2008535244A5 JP 2008504043 A JP2008504043 A JP 2008504043A JP 2008504043 A JP2008504043 A JP 2008504043A JP 2008535244 A5 JP2008535244 A5 JP 2008535244A5
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JP
Japan
Prior art keywords
sin film
substrate
electromagnetic radiation
gpa
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2008504043A
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English (en)
Japanese (ja)
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JP4977686B2 (ja
JP2008535244A (ja
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Publication date
Priority claimed from US11/091,756 external-priority patent/US7265066B2/en
Application filed filed Critical
Publication of JP2008535244A publication Critical patent/JP2008535244A/ja
Publication of JP2008535244A5 publication Critical patent/JP2008535244A5/ja
Application granted granted Critical
Publication of JP4977686B2 publication Critical patent/JP4977686B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2008504043A 2005-03-29 2006-02-16 平行電磁放射線を用いて薄膜内の引張応力を増大させる方法 Expired - Fee Related JP4977686B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/091,756 US7265066B2 (en) 2005-03-29 2005-03-29 Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation
US11/091,756 2005-03-29
PCT/US2006/005419 WO2006104582A2 (en) 2005-03-29 2006-02-16 Method and system for increasing tensile stress in a thin film using collimated electromagnetic radiation

Publications (3)

Publication Number Publication Date
JP2008535244A JP2008535244A (ja) 2008-08-28
JP2008535244A5 true JP2008535244A5 (https=) 2009-04-02
JP4977686B2 JP4977686B2 (ja) 2012-07-18

Family

ID=37053841

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008504043A Expired - Fee Related JP4977686B2 (ja) 2005-03-29 2006-02-16 平行電磁放射線を用いて薄膜内の引張応力を増大させる方法

Country Status (4)

Country Link
US (1) US7265066B2 (https=)
JP (1) JP4977686B2 (https=)
TW (1) TWI332256B (https=)
WO (1) WO2006104582A2 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5017958B2 (ja) * 2006-08-08 2012-09-05 富士通セミコンダクター株式会社 半導体装置の製造方法
US7629273B2 (en) * 2006-09-19 2009-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for modulating stresses of a contact etch stop layer
US20080138983A1 (en) * 2006-12-06 2008-06-12 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming tensile stress films for NFET performance enhancement
US7700499B2 (en) * 2007-01-19 2010-04-20 Freescale Semiconductor, Inc. Multilayer silicon nitride deposition for a semiconductor device
JP2008306132A (ja) * 2007-06-11 2008-12-18 Renesas Technology Corp 半導体装置の製造方法
US20090189227A1 (en) * 2008-01-25 2009-07-30 Toshiba America Electronic Components, Inc. Structures of sram bit cells
US8236709B2 (en) * 2009-07-29 2012-08-07 International Business Machines Corporation Method of fabricating a device using low temperature anneal processes, a device and design structure
US9281238B2 (en) 2014-07-11 2016-03-08 United Microelectronics Corp. Method for fabricating interlayer dielectric layer
US12455511B2 (en) * 2022-02-04 2025-10-28 Tokyo Electron Limited In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03291931A (ja) * 1990-04-10 1991-12-24 Canon Inc レジストレスパターニング方法
JPH08203894A (ja) * 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
JPH0978245A (ja) * 1995-09-08 1997-03-25 Canon Inc 薄膜形成方法
JPH1070123A (ja) * 1996-06-17 1998-03-10 Siemens Ag 表面状態の不動態化を容易にする層を有する装置構造
US6492282B1 (en) * 1997-04-30 2002-12-10 Siemens Aktiengesellschaft Integrated circuits and manufacturing methods
US6740566B2 (en) * 1999-09-17 2004-05-25 Advanced Micro Devices, Inc. Ultra-thin resist shallow trench process using high selectivity nitride etch
JP3425579B2 (ja) * 1999-12-08 2003-07-14 Ｎｅｃエレクトロニクス株式会社 半導体装置の製造方法
US6429135B1 (en) 2001-01-05 2002-08-06 United Microelectronics Corp. Method of reducing stress between a nitride silicon spacer and a substrate
US8288239B2 (en) * 2002-09-30 2012-10-16 Applied Materials, Inc. Thermal flux annealing influence of buried species
WO2003102724A2 (en) 2002-05-29 2003-12-11 Tokyo Electron Limited Method and system for data handling, storage and manipulation
US20050217799A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Wafer heater assembly
JP2005310927A (ja) * 2004-04-20 2005-11-04 Toshiba Corp 紫外線照射による高品質シリコン窒化膜の成膜方法

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