JP4867176B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4867176B2 JP4867176B2 JP2005050213A JP2005050213A JP4867176B2 JP 4867176 B2 JP4867176 B2 JP 4867176B2 JP 2005050213 A JP2005050213 A JP 2005050213A JP 2005050213 A JP2005050213 A JP 2005050213A JP 4867176 B2 JP4867176 B2 JP 4867176B2
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- 238000000034 method Methods 0.000 claims description 34
- 125000006850 spacer group Chemical group 0.000 claims description 33
- 239000012535 impurity Substances 0.000 claims description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- 238000011065 in-situ storage Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 4
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 4
- 238000013459 approach Methods 0.000 claims 1
- 238000012993 chemical processing Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 230000015572 biosynthetic process Effects 0.000 description 21
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 230000008569 process Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Description
Claims (6)
- 半導体基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記ゲート電極の側面にサイドウォールスペーサーを形成する工程と、
前記サイドウォールスペーサーを形成した際に前記ゲート電極の両側に生じた前記半導体基板の削られた部分を埋め込むように第1エピタキシャル層を形成する工程と、
前記第1エピタキシャル層上に前記第1エピタキシャル層とは逆導電型の第2エピタキシャル層からなるエクステンション領域を形成する工程と、
前記エクステンション領域を形成した後に前記ゲート電極の側壁に前記サイドウォールスペーサーを介してサイドウォールを形成する工程と、
前記サイドウォールを形成した後に前記エクステンション領域上にソース・ドレイン領域を形成する工程と
を備えたことを特徴とする半導体装置の製造方法。 - 前記第1エピタキシャル層を前記半導体基板の不純物濃度となるように形成する
ことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第1エピタキシャル層を形成する前に、前記半導体基板の削られた部分のテーパー面を前記半導体基板と同じ結晶方位にする薬液処理を行う
ことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第1エピタキシャル層を形成するエピタキシャル成長において、エピタキシャル成長層の角度が前記半導体基板の削られた部分のテーパー角に合うように、成膜温度と塩化水素流量の調節により前記角度を制御する
ことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記第1エピタキシャル層を形成する工程では、エピタキシャル成長時にIn-situドーピングにて前記半導体基板の不純物濃度に不純物をドーピングし、
前記第2エピタキシャル層を形成する工程では、エピタキシャル成長時にIn-situドーピングにて前記エクステンション領域を形成する不純物濃度に不純物をドーピングする
ことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記エクステンション領域を前記ゲート電極に近づくにつれて膜厚が薄くなるように形成する
ことを特徴とする請求項1記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005050213A JP4867176B2 (ja) | 2005-02-25 | 2005-02-25 | 半導体装置の製造方法 |
US11/358,022 US7557396B2 (en) | 2005-02-25 | 2006-02-21 | Semiconductor device and method of manufacturing semiconductor device |
US12/472,860 US8012840B2 (en) | 2005-02-25 | 2009-05-27 | Semiconductor device and method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005050213A JP4867176B2 (ja) | 2005-02-25 | 2005-02-25 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006237302A JP2006237302A (ja) | 2006-09-07 |
JP4867176B2 true JP4867176B2 (ja) | 2012-02-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005050213A Expired - Fee Related JP4867176B2 (ja) | 2005-02-25 | 2005-02-25 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
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US (2) | US7557396B2 (ja) |
JP (1) | JP4867176B2 (ja) |
Families Citing this family (23)
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JP2008147340A (ja) * | 2006-12-08 | 2008-06-26 | Nec Electronics Corp | 半導体装置、半導体装置の製造方法、及びsramセル |
US7678642B2 (en) * | 2007-05-11 | 2010-03-16 | Hynix Semiconductor Inc. | Method for manufacturing phase change memory device using a patterning process |
KR100898225B1 (ko) * | 2007-09-07 | 2009-05-18 | 주식회사 동부하이텍 | 반도체 소자 및 이의 제조방법 |
KR20090068929A (ko) * | 2007-12-24 | 2009-06-29 | 주식회사 동부하이텍 | 반도체 소자의 금속 배선 제조 방법 |
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US8329547B2 (en) * | 2010-07-22 | 2012-12-11 | United Microelectronics Corp. | Semiconductor process for etching a recess into a substrate by using an etchant that contains hydrogen peroxide |
US8778767B2 (en) * | 2010-11-18 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuits and fabrication methods thereof |
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JP2013026382A (ja) | 2011-07-20 | 2013-02-04 | Elpida Memory Inc | 半導体装置の製造方法 |
US8592916B2 (en) | 2012-03-20 | 2013-11-26 | International Business Machines Corporation | Selectively raised source/drain transistor |
FR2989220A1 (fr) | 2012-04-06 | 2013-10-11 | St Microelectronics Crolles 2 | Circuit integre comprenant un transistor mos ayant une reponse sigmoidale et procede de realisation correspondant |
KR102059526B1 (ko) | 2012-11-22 | 2019-12-26 | 삼성전자주식회사 | 내장 스트레서를 갖는 반도체 소자 형성 방법 및 관련된 소자 |
TWI643346B (zh) | 2012-11-22 | 2018-12-01 | 三星電子股份有限公司 | 在凹處包括一應力件的半導體裝置及其形成方法(三) |
US8900958B2 (en) | 2012-12-19 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Epitaxial formation mechanisms of source and drain regions |
US8853039B2 (en) | 2013-01-17 | 2014-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction for formation of epitaxial layer in source and drain regions |
US9536771B2 (en) | 2013-04-11 | 2017-01-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gap fill self planarization on post EPI |
US9293534B2 (en) | 2014-03-21 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Formation of dislocations in source and drain regions of FinFET devices |
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US11031502B2 (en) | 2019-01-08 | 2021-06-08 | Samsung Electronics Co., Ltd. | Semiconductor devices |
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2005
- 2005-02-25 JP JP2005050213A patent/JP4867176B2/ja not_active Expired - Fee Related
-
2006
- 2006-02-21 US US11/358,022 patent/US7557396B2/en not_active Expired - Fee Related
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2009
- 2009-05-27 US US12/472,860 patent/US8012840B2/en not_active Expired - Fee Related
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US8012840B2 (en) | 2011-09-06 |
US7557396B2 (en) | 2009-07-07 |
US20090233411A1 (en) | 2009-09-17 |
JP2006237302A (ja) | 2006-09-07 |
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