JP4864290B2 - 半導体デバイス上の構造の寸法を測定するために使用される、非破壊光波測定（光波散乱計測）（ｓｃａｔｔｅｒｏｍｅｔｒｙ）に基づいた測定ツールを較正する方法と構造 - Google Patents

半導体デバイス上の構造の寸法を測定するために使用される、非破壊光波測定（光波散乱計測）（ｓｃａｔｔｅｒｏｍｅｔｒｙ）に基づいた測定ツールを較正する方法と構造 Download PDF

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JP4864290B2
JP4864290B2 JP2003579273A JP2003579273A JP4864290B2 JP 4864290 B2 JP4864290 B2 JP 4864290B2 JP 2003579273 A JP2003579273 A JP 2003579273A JP 2003579273 A JP2003579273 A JP 2003579273A JP 4864290 B2 JP4864290 B2 JP 4864290B2
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structures
grating
critical dimension
size
grating structure
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イー． ナリマン ホミ
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Advanced Micro Devices Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2003579273A 2002-03-19 2002-12-17 半導体デバイス上の構造の寸法を測定するために使用される、非破壊光波測定（光波散乱計測）（ｓｃａｔｔｅｒｏｍｅｔｒｙ）に基づいた測定ツールを較正する方法と構造 Expired - Lifetime JP4864290B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/103,223 2002-03-19
US10/103,223 US6742168B1 (en) 2002-03-19 2002-03-19 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device
PCT/US2002/040264 WO2003081662A1 (en) 2002-03-19 2002-12-17 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Publications (3)

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JP2005521261A JP2005521261A (ja) 2005-07-14
JP2005521261A5 JP2005521261A5 (https=) 2006-02-09
JP4864290B2 true JP4864290B2 (ja) 2012-02-01

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JP2003579273A Expired - Lifetime JP4864290B2 (ja) 2002-03-19 2002-12-17 半導体デバイス上の構造の寸法を測定するために使用される、非破壊光波測定（光波散乱計測）（ｓｃａｔｔｅｒｏｍｅｔｒｙ）に基づいた測定ツールを較正する方法と構造

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US (1) US6742168B1 (https=)
JP (1) JP4864290B2 (https=)
KR (1) KR100942037B1 (https=)
CN (1) CN100407391C (https=)
AU (1) AU2002357274A1 (https=)
DE (1) DE10297676B4 (https=)
GB (1) GB2406215B (https=)
WO (1) WO2003081662A1 (https=)

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US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7738694B2 (en) * 2006-03-23 2010-06-15 Pratt & Whitney Canada Corp. Calibration of optical patternator spray parameter measurements
CN100535759C (zh) * 2006-03-30 2009-09-02 联华电子股份有限公司 判定半导体工艺条件的方法
DE102007009901B4 (de) * 2007-02-28 2011-07-07 Globalfoundries Inc. Technik zum Strukturieren unterschiedlich verspannter Schichten, die über Transistoren ausgebildet sind, durch verbesserte Ätzsteuerungsstrategien
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
CN102005436B (zh) * 2009-09-01 2012-02-08 中芯国际集成电路制造(上海)有限公司 度量衡校准晶圆
CN102136438B (zh) * 2010-01-21 2012-08-01 上海华虹Nec电子有限公司 快速检测芯片堆栈结构间段差高度的方法
US9123649B1 (en) * 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
US9091667B2 (en) * 2013-10-25 2015-07-28 Globalfoundries Inc. Detection of particle contamination on wafers
AT513185B1 (de) * 2013-11-13 2015-12-15 Ditest Fahrzeugdiagnose Gmbh Kalibrierelement
KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
EP3221897A1 (en) * 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
CN107037694A (zh) * 2017-05-25 2017-08-11 苏州灯龙光电科技有限公司 一种检测显示性能的检测板及其检测方法
US10928739B2 (en) 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices

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Publication number Publication date
DE10297676B4 (de) 2015-03-19
KR100942037B1 (ko) 2010-02-11
WO2003081662A1 (en) 2003-10-02
US6742168B1 (en) 2004-05-25
JP2005521261A (ja) 2005-07-14
KR20050002869A (ko) 2005-01-10
AU2002357274A1 (en) 2003-10-08
CN1623224A (zh) 2005-06-01
CN100407391C (zh) 2008-07-30
GB2406215A (en) 2005-03-23
DE10297676T5 (de) 2005-07-07
GB0419077D0 (en) 2004-09-29
GB2406215B (en) 2005-12-21

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