GB2406215B - Method and apparatus for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device - Google Patents

Method and apparatus for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Info

Publication number
GB2406215B
GB2406215B GB0419077A GB0419077A GB2406215B GB 2406215 B GB2406215 B GB 2406215B GB 0419077 A GB0419077 A GB 0419077A GB 0419077 A GB0419077 A GB 0419077A GB 2406215 B GB2406215 B GB 2406215B
Authority
GB
United Kingdom
Prior art keywords
scatterometry
calibrating
features
semiconductor device
tool used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0419077A
Other languages
English (en)
Other versions
GB2406215A (en
GB0419077D0 (en
Inventor
Homi E Nariman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of GB0419077D0 publication Critical patent/GB0419077D0/en
Publication of GB2406215A publication Critical patent/GB2406215A/en
Application granted granted Critical
Publication of GB2406215B publication Critical patent/GB2406215B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
GB0419077A 2002-03-19 2002-12-17 Method and apparatus for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device Expired - Lifetime GB2406215B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/103,223 US6742168B1 (en) 2002-03-19 2002-03-19 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device
PCT/US2002/040264 WO2003081662A1 (en) 2002-03-19 2002-12-17 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Publications (3)

Publication Number Publication Date
GB0419077D0 GB0419077D0 (en) 2004-09-29
GB2406215A GB2406215A (en) 2005-03-23
GB2406215B true GB2406215B (en) 2005-12-21

Family

ID=28452364

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0419077A Expired - Lifetime GB2406215B (en) 2002-03-19 2002-12-17 Method and apparatus for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Country Status (8)

Country Link
US (1) US6742168B1 (https=)
JP (1) JP4864290B2 (https=)
KR (1) KR100942037B1 (https=)
CN (1) CN100407391C (https=)
AU (1) AU2002357274A1 (https=)
DE (1) DE10297676B4 (https=)
GB (1) GB2406215B (https=)
WO (1) WO2003081662A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7016054B2 (en) * 2003-03-31 2006-03-21 Lsi Logic Corporation Lithography line width monitor reflecting chip-wide average feature size
US6859746B1 (en) * 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
JP2005051210A (ja) * 2003-07-15 2005-02-24 Matsushita Electric Ind Co Ltd 面内分布データの圧縮法、面内分布の測定方法、面内分布の最適化方法、プロセス装置の管理方法及びプロセス管理方法
DE102004006258B4 (de) * 2004-02-09 2007-08-02 Infineon Technologies Ag Verfahren zum Angleichen von zwei Messverfahren für die Messung von Strukturbreiten auf einem Substrat
KR100625168B1 (ko) * 2004-08-23 2006-09-20 삼성전자주식회사 기판에 형성된 패턴의 검사방법 및 이를 수행하기 위한검사장치
US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7738694B2 (en) * 2006-03-23 2010-06-15 Pratt & Whitney Canada Corp. Calibration of optical patternator spray parameter measurements
CN100535759C (zh) * 2006-03-30 2009-09-02 联华电子股份有限公司 判定半导体工艺条件的方法
DE102007009901B4 (de) * 2007-02-28 2011-07-07 Globalfoundries Inc. Technik zum Strukturieren unterschiedlich verspannter Schichten, die über Transistoren ausgebildet sind, durch verbesserte Ätzsteuerungsstrategien
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
CN102005436B (zh) * 2009-09-01 2012-02-08 中芯国际集成电路制造(上海)有限公司 度量衡校准晶圆
CN102136438B (zh) * 2010-01-21 2012-08-01 上海华虹Nec电子有限公司 快速检测芯片堆栈结构间段差高度的方法
US9123649B1 (en) * 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
US9091667B2 (en) * 2013-10-25 2015-07-28 Globalfoundries Inc. Detection of particle contamination on wafers
AT513185B1 (de) * 2013-11-13 2015-12-15 Ditest Fahrzeugdiagnose Gmbh Kalibrierelement
KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
EP3221897A1 (en) * 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
CN107037694A (zh) * 2017-05-25 2017-08-11 苏州灯龙光电科技有限公司 一种检测显示性能的检测板及其检测方法
US10928739B2 (en) 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0727715A1 (en) * 1995-02-15 1996-08-21 AT&T Corp. Method and arrangement for characterizing micro-size patterns
US6272392B1 (en) * 1998-12-04 2001-08-07 Advanced Micro Devices, Inc. Methodology for extracting effective lens aberrations using a neural network
US20020012854A1 (en) * 1998-08-28 2002-01-31 Song Peng Method to produce equal sized features in microlithography
WO2002013232A2 (en) * 2000-08-09 2002-02-14 Jordan Valley Applied Radiation Ltd. Measurement of critical dimensions using x-rays

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5880838A (en) 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
EP0847895B1 (en) 1996-12-13 2001-08-01 Denso Corporation Apparatus for automatically adjusting aiming of headlights of an automotive vehicle
US5949547A (en) * 1997-02-20 1999-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. System for in-line monitoring of photo processing in VLSI fabrication
US5867276A (en) 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
US6081334A (en) 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
DE19922614A1 (de) * 1998-12-04 2000-06-15 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur optischen Kontrolle von Fertigungsprozessen feinstrukturierter Oberflächen in der Halbleiterfertigung
US6245584B1 (en) 1999-07-01 2001-06-12 Advanced Micro Devices Method for detecting adjustment error in photolithographic stepping printer
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US6384408B1 (en) * 1999-08-11 2002-05-07 Kla-Tencor Corporation Calibration of a scanning electron microscope
US6051348A (en) 1999-08-17 2000-04-18 Advanced Micro Devices Method for detecting malfunction in photolithographic fabrication track
FR2812755B1 (fr) * 2000-08-04 2002-10-31 St Microelectronics Sa Inductance integree
US6782337B2 (en) * 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6354133B1 (en) * 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
TW519746B (en) * 2001-01-26 2003-02-01 Timbre Tech Inc System and method for characterizing macro-grating test patterns in advanced lithography and etch processes
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6650422B2 (en) 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6563578B2 (en) * 2001-04-02 2003-05-13 Advanced Micro Devices, Inc. In-situ thickness measurement for use in semiconductor processing
JP4348412B2 (ja) * 2001-04-26 2009-10-21 東京エレクトロン株式会社 計測システムクラスター
US6545753B2 (en) * 2001-06-27 2003-04-08 Advanced Micro Devices, Inc. Using scatterometry for etch end points for dual damascene process
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
US6583871B1 (en) * 2001-07-23 2003-06-24 Advanced Micro Devices, Inc. System and method to measure closed area defects
US6448097B1 (en) * 2001-07-23 2002-09-10 Advanced Micro Devices Inc. Measure fluorescence from chemical released during trim etch
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0727715A1 (en) * 1995-02-15 1996-08-21 AT&T Corp. Method and arrangement for characterizing micro-size patterns
US20020012854A1 (en) * 1998-08-28 2002-01-31 Song Peng Method to produce equal sized features in microlithography
US6272392B1 (en) * 1998-12-04 2001-08-07 Advanced Micro Devices, Inc. Methodology for extracting effective lens aberrations using a neural network
WO2002013232A2 (en) * 2000-08-09 2002-02-14 Jordan Valley Applied Radiation Ltd. Measurement of critical dimensions using x-rays

Also Published As

Publication number Publication date
DE10297676B4 (de) 2015-03-19
KR100942037B1 (ko) 2010-02-11
JP4864290B2 (ja) 2012-02-01
WO2003081662A1 (en) 2003-10-02
US6742168B1 (en) 2004-05-25
JP2005521261A (ja) 2005-07-14
KR20050002869A (ko) 2005-01-10
AU2002357274A1 (en) 2003-10-08
CN1623224A (zh) 2005-06-01
CN100407391C (zh) 2008-07-30
GB2406215A (en) 2005-03-23
DE10297676T5 (de) 2005-07-07
GB0419077D0 (en) 2004-09-29

Similar Documents

Publication Publication Date Title
GB2406215B (en) Method and apparatus for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device
SG115621A1 (en) Method and device for measuring contamination of a surface of a component of a lithographic apparatus
AU2002353481A1 (en) Method and apparatus for measuring stress in semiconductor wafers
AU2002359736A1 (en) Method and apparatus for mounting a lidless semiconductor device
GB2394780B (en) A method of and apparatus for testing for integrated circuit contact defects
AU2003295944A8 (en) An apparatus for high accuracy distance and velocity measurement and methods thereof
AU2003226970A1 (en) Distance measuring device and method for determining a distance
SG106687A1 (en) Lithographic apparatus, device manufacturing method, performance measuring method, calibration method and computer program
TWI365994B (en) Method and apparatus for evaluating a semiconductor wafer
DE60333533D1 (de) Verfahren und vorrichtung zum splitten eines halbleiter-wafers
GB0309615D0 (en) Sphygmogram measure method and device for two closed measured points
AU2003235653A1 (en) Method and device for measuring distance
GB2418737B (en) Measurement method and device for the measurement of a path covered
AU2003215823A1 (en) Method and apparatus for determining a geographic location of an electronic device
AU2003263516A1 (en) A coordinate measuring device and a method for measuring the position of an object
AU2003226919A8 (en) Method and apparatus for measuring light reflections of an object
AU2003275376A8 (en) Method and apparatus for product attribute measurement and gripper devices
SG127692A1 (en) A device and a method for automatically inspectingthe surface quality of a wafer by measuring bondi ng speed
AU2003262553A8 (en) Device and method for measurement
SG119224A1 (en) Calibration method for a lithographic apparatus and device manufacturing method
AU2003255888A8 (en) A method and apparatus for iddq measuring
EP1662257A4 (en) TOOL FOR MEASURING MEASURING OBJECT, MEASURING DEVICE AND MEASURING METHOD
AU2002353024A1 (en) Method and apparatus for measuring a required characteristic of a workpiece layer
SG112071A1 (en) Method of preparing a substrate, method of measuring, device manufacturing method, lithographic apparatus, computer program and substrate
AU2003209809A1 (en) Measuring device and method for reducing measuring errors

Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20221216