CN100407391C - 用以校准用于测量半导体装置特征尺寸的散射测量工具的方法以及结构 - Google Patents

用以校准用于测量半导体装置特征尺寸的散射测量工具的方法以及结构 Download PDF

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Publication number
CN100407391C
CN100407391C CN028285476A CN02828547A CN100407391C CN 100407391 C CN100407391 C CN 100407391C CN 028285476 A CN028285476 A CN 028285476A CN 02828547 A CN02828547 A CN 02828547A CN 100407391 C CN100407391 C CN 100407391C
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grating
structures
critical dimension
wafer
grating structures
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CN028285476A
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CN1623224A (zh
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H·E·纳里曼
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
CN028285476A 2002-03-19 2002-12-17 用以校准用于测量半导体装置特征尺寸的散射测量工具的方法以及结构 Expired - Lifetime CN100407391C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/103,223 2002-03-19
US10/103,223 US6742168B1 (en) 2002-03-19 2002-03-19 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Publications (2)

Publication Number Publication Date
CN1623224A CN1623224A (zh) 2005-06-01
CN100407391C true CN100407391C (zh) 2008-07-30

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CN028285476A Expired - Lifetime CN100407391C (zh) 2002-03-19 2002-12-17 用以校准用于测量半导体装置特征尺寸的散射测量工具的方法以及结构

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Country Link
US (1) US6742168B1 (https=)
JP (1) JP4864290B2 (https=)
KR (1) KR100942037B1 (https=)
CN (1) CN100407391C (https=)
AU (1) AU2002357274A1 (https=)
DE (1) DE10297676B4 (https=)
GB (1) GB2406215B (https=)
WO (1) WO2003081662A1 (https=)

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US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7738694B2 (en) * 2006-03-23 2010-06-15 Pratt & Whitney Canada Corp. Calibration of optical patternator spray parameter measurements
CN100535759C (zh) * 2006-03-30 2009-09-02 联华电子股份有限公司 判定半导体工艺条件的方法
DE102007009901B4 (de) * 2007-02-28 2011-07-07 Globalfoundries Inc. Technik zum Strukturieren unterschiedlich verspannter Schichten, die über Transistoren ausgebildet sind, durch verbesserte Ätzsteuerungsstrategien
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
CN102005436B (zh) * 2009-09-01 2012-02-08 中芯国际集成电路制造(上海)有限公司 度量衡校准晶圆
CN102136438B (zh) * 2010-01-21 2012-08-01 上海华虹Nec电子有限公司 快速检测芯片堆栈结构间段差高度的方法
US9123649B1 (en) * 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
US9091667B2 (en) * 2013-10-25 2015-07-28 Globalfoundries Inc. Detection of particle contamination on wafers
AT513185B1 (de) * 2013-11-13 2015-12-15 Ditest Fahrzeugdiagnose Gmbh Kalibrierelement
KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
EP3221897A1 (en) * 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
CN107037694A (zh) * 2017-05-25 2017-08-11 苏州灯龙光电科技有限公司 一种检测显示性能的检测板及其检测方法
US10928739B2 (en) 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices

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US20020012854A1 (en) * 1998-08-28 2002-01-31 Song Peng Method to produce equal sized features in microlithography
WO2002013212A1 (fr) * 2000-08-04 2002-02-14 Stmicroelectronics S.A. Inductance integree

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DE19922614A1 (de) * 1998-12-04 2000-06-15 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur optischen Kontrolle von Fertigungsprozessen feinstrukturierter Oberflächen in der Halbleiterfertigung
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US6782337B2 (en) * 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6354133B1 (en) * 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
TW519746B (en) * 2001-01-26 2003-02-01 Timbre Tech Inc System and method for characterizing macro-grating test patterns in advanced lithography and etch processes
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6650422B2 (en) 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6563578B2 (en) * 2001-04-02 2003-05-13 Advanced Micro Devices, Inc. In-situ thickness measurement for use in semiconductor processing
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US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
US6583871B1 (en) * 2001-07-23 2003-06-24 Advanced Micro Devices, Inc. System and method to measure closed area defects
US6448097B1 (en) * 2001-07-23 2002-09-10 Advanced Micro Devices Inc. Measure fluorescence from chemical released during trim etch
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US5607800A (en) * 1995-02-15 1997-03-04 Lucent Technologies Inc. Method and arrangement for characterizing micro-size patterns
US20020012854A1 (en) * 1998-08-28 2002-01-31 Song Peng Method to produce equal sized features in microlithography
WO2002013212A1 (fr) * 2000-08-04 2002-02-14 Stmicroelectronics S.A. Inductance integree

Also Published As

Publication number Publication date
DE10297676B4 (de) 2015-03-19
KR100942037B1 (ko) 2010-02-11
JP4864290B2 (ja) 2012-02-01
WO2003081662A1 (en) 2003-10-02
US6742168B1 (en) 2004-05-25
JP2005521261A (ja) 2005-07-14
KR20050002869A (ko) 2005-01-10
AU2002357274A1 (en) 2003-10-08
CN1623224A (zh) 2005-06-01
GB2406215A (en) 2005-03-23
DE10297676T5 (de) 2005-07-07
GB0419077D0 (en) 2004-09-29
GB2406215B (en) 2005-12-21

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