AU2002357274A1 - Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device - Google Patents

Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Info

Publication number
AU2002357274A1
AU2002357274A1 AU2002357274A AU2002357274A AU2002357274A1 AU 2002357274 A1 AU2002357274 A1 AU 2002357274A1 AU 2002357274 A AU2002357274 A AU 2002357274A AU 2002357274 A AU2002357274 A AU 2002357274A AU 2002357274 A1 AU2002357274 A1 AU 2002357274A1
Authority
AU
Australia
Prior art keywords
scatterometry
calibrating
features
semiconductor device
tool used
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002357274A
Other languages
English (en)
Inventor
Homi E. Nariman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2002357274A1 publication Critical patent/AU2002357274A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
AU2002357274A 2002-03-19 2002-12-17 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device Abandoned AU2002357274A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/103,223 2002-03-19
US10/103,223 US6742168B1 (en) 2002-03-19 2002-03-19 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device
PCT/US2002/040264 WO2003081662A1 (en) 2002-03-19 2002-12-17 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Publications (1)

Publication Number Publication Date
AU2002357274A1 true AU2002357274A1 (en) 2003-10-08

Family

ID=28452364

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002357274A Abandoned AU2002357274A1 (en) 2002-03-19 2002-12-17 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Country Status (8)

Country Link
US (1) US6742168B1 (https=)
JP (1) JP4864290B2 (https=)
KR (1) KR100942037B1 (https=)
CN (1) CN100407391C (https=)
AU (1) AU2002357274A1 (https=)
DE (1) DE10297676B4 (https=)
GB (1) GB2406215B (https=)
WO (1) WO2003081662A1 (https=)

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US6859746B1 (en) * 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
JP2005051210A (ja) * 2003-07-15 2005-02-24 Matsushita Electric Ind Co Ltd 面内分布データの圧縮法、面内分布の測定方法、面内分布の最適化方法、プロセス装置の管理方法及びプロセス管理方法
DE102004006258B4 (de) * 2004-02-09 2007-08-02 Infineon Technologies Ag Verfahren zum Angleichen von zwei Messverfahren für die Messung von Strukturbreiten auf einem Substrat
KR100625168B1 (ko) * 2004-08-23 2006-09-20 삼성전자주식회사 기판에 형성된 패턴의 검사방법 및 이를 수행하기 위한검사장치
US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7738694B2 (en) * 2006-03-23 2010-06-15 Pratt & Whitney Canada Corp. Calibration of optical patternator spray parameter measurements
CN100535759C (zh) * 2006-03-30 2009-09-02 联华电子股份有限公司 判定半导体工艺条件的方法
DE102007009901B4 (de) * 2007-02-28 2011-07-07 Globalfoundries Inc. Technik zum Strukturieren unterschiedlich verspannter Schichten, die über Transistoren ausgebildet sind, durch verbesserte Ätzsteuerungsstrategien
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
CN102005436B (zh) * 2009-09-01 2012-02-08 中芯国际集成电路制造(上海)有限公司 度量衡校准晶圆
CN102136438B (zh) * 2010-01-21 2012-08-01 上海华虹Nec电子有限公司 快速检测芯片堆栈结构间段差高度的方法
US9123649B1 (en) * 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
US9091667B2 (en) * 2013-10-25 2015-07-28 Globalfoundries Inc. Detection of particle contamination on wafers
AT513185B1 (de) * 2013-11-13 2015-12-15 Ditest Fahrzeugdiagnose Gmbh Kalibrierelement
KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
EP3221897A1 (en) * 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
CN107037694A (zh) * 2017-05-25 2017-08-11 苏州灯龙光电科技有限公司 一种检测显示性能的检测板及其检测方法
US10928739B2 (en) 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices

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US6650422B2 (en) 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6563578B2 (en) * 2001-04-02 2003-05-13 Advanced Micro Devices, Inc. In-situ thickness measurement for use in semiconductor processing
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US6545753B2 (en) * 2001-06-27 2003-04-08 Advanced Micro Devices, Inc. Using scatterometry for etch end points for dual damascene process
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
US6583871B1 (en) * 2001-07-23 2003-06-24 Advanced Micro Devices, Inc. System and method to measure closed area defects
US6448097B1 (en) * 2001-07-23 2002-09-10 Advanced Micro Devices Inc. Measure fluorescence from chemical released during trim etch
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures

Also Published As

Publication number Publication date
DE10297676B4 (de) 2015-03-19
KR100942037B1 (ko) 2010-02-11
JP4864290B2 (ja) 2012-02-01
WO2003081662A1 (en) 2003-10-02
US6742168B1 (en) 2004-05-25
JP2005521261A (ja) 2005-07-14
KR20050002869A (ko) 2005-01-10
CN1623224A (zh) 2005-06-01
CN100407391C (zh) 2008-07-30
GB2406215A (en) 2005-03-23
DE10297676T5 (de) 2005-07-07
GB0419077D0 (en) 2004-09-29
GB2406215B (en) 2005-12-21

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase