JP2005521261A5 - - Google Patents

Download PDF

Info

Publication number
JP2005521261A5
JP2005521261A5 JP2003579273A JP2003579273A JP2005521261A5 JP 2005521261 A5 JP2005521261 A5 JP 2005521261A5 JP 2003579273 A JP2003579273 A JP 2003579273A JP 2003579273 A JP2003579273 A JP 2003579273A JP 2005521261 A5 JP2005521261 A5 JP 2005521261A5
Authority
JP
Japan
Prior art keywords
critical dimension
destructive
measuring
measurement tool
grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003579273A
Other languages
English (en)
Japanese (ja)
Other versions
JP4864290B2 (ja
JP2005521261A (ja
Filing date
Publication date
Priority claimed from US10/103,223 external-priority patent/US6742168B1/en
Application filed filed Critical
Publication of JP2005521261A publication Critical patent/JP2005521261A/ja
Publication of JP2005521261A5 publication Critical patent/JP2005521261A5/ja
Application granted granted Critical
Publication of JP4864290B2 publication Critical patent/JP4864290B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2003579273A 2002-03-19 2002-12-17 半導体デバイス上の構造の寸法を測定するために使用される、非破壊光波測定(光波散乱計測)(scatterometry)に基づいた測定ツールを較正する方法と構造 Expired - Lifetime JP4864290B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/103,223 2002-03-19
US10/103,223 US6742168B1 (en) 2002-03-19 2002-03-19 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device
PCT/US2002/040264 WO2003081662A1 (en) 2002-03-19 2002-12-17 Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device

Publications (3)

Publication Number Publication Date
JP2005521261A JP2005521261A (ja) 2005-07-14
JP2005521261A5 true JP2005521261A5 (https=) 2006-02-09
JP4864290B2 JP4864290B2 (ja) 2012-02-01

Family

ID=28452364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003579273A Expired - Lifetime JP4864290B2 (ja) 2002-03-19 2002-12-17 半導体デバイス上の構造の寸法を測定するために使用される、非破壊光波測定(光波散乱計測)(scatterometry)に基づいた測定ツールを較正する方法と構造

Country Status (8)

Country Link
US (1) US6742168B1 (https=)
JP (1) JP4864290B2 (https=)
KR (1) KR100942037B1 (https=)
CN (1) CN100407391C (https=)
AU (1) AU2002357274A1 (https=)
DE (1) DE10297676B4 (https=)
GB (1) GB2406215B (https=)
WO (1) WO2003081662A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7016054B2 (en) * 2003-03-31 2006-03-21 Lsi Logic Corporation Lithography line width monitor reflecting chip-wide average feature size
US6859746B1 (en) * 2003-05-01 2005-02-22 Advanced Micro Devices, Inc. Methods of using adaptive sampling techniques based upon categorization of process variations, and system for performing same
JP2005051210A (ja) * 2003-07-15 2005-02-24 Matsushita Electric Ind Co Ltd 面内分布データの圧縮法、面内分布の測定方法、面内分布の最適化方法、プロセス装置の管理方法及びプロセス管理方法
DE102004006258B4 (de) * 2004-02-09 2007-08-02 Infineon Technologies Ag Verfahren zum Angleichen von zwei Messverfahren für die Messung von Strukturbreiten auf einem Substrat
KR100625168B1 (ko) * 2004-08-23 2006-09-20 삼성전자주식회사 기판에 형성된 패턴의 검사방법 및 이를 수행하기 위한검사장치
US7052921B1 (en) 2004-09-03 2006-05-30 Advanced Micro Devices, Inc. System and method using in situ scatterometry to detect photoresist pattern integrity during the photolithography process
US7427457B1 (en) 2004-09-03 2008-09-23 Advanced Micro Devices, Inc. Methods for designing grating structures for use in situ scatterometry to detect photoresist defects
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7738694B2 (en) * 2006-03-23 2010-06-15 Pratt & Whitney Canada Corp. Calibration of optical patternator spray parameter measurements
CN100535759C (zh) * 2006-03-30 2009-09-02 联华电子股份有限公司 判定半导体工艺条件的方法
DE102007009901B4 (de) * 2007-02-28 2011-07-07 Globalfoundries Inc. Technik zum Strukturieren unterschiedlich verspannter Schichten, die über Transistoren ausgebildet sind, durch verbesserte Ätzsteuerungsstrategien
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
CN102005436B (zh) * 2009-09-01 2012-02-08 中芯国际集成电路制造(上海)有限公司 度量衡校准晶圆
CN102136438B (zh) * 2010-01-21 2012-08-01 上海华虹Nec电子有限公司 快速检测芯片堆栈结构间段差高度的方法
US9123649B1 (en) * 2013-01-21 2015-09-01 Kla-Tencor Corporation Fit-to-pitch overlay measurement targets
US9091667B2 (en) * 2013-10-25 2015-07-28 Globalfoundries Inc. Detection of particle contamination on wafers
AT513185B1 (de) * 2013-11-13 2015-12-15 Ditest Fahrzeugdiagnose Gmbh Kalibrierelement
KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
EP3221897A1 (en) * 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
CN107037694A (zh) * 2017-05-25 2017-08-11 苏州灯龙光电科技有限公司 一种检测显示性能的检测板及其检测方法
US10928739B2 (en) 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5607800A (en) 1995-02-15 1997-03-04 Lucent Technologies Inc. Method and arrangement for characterizing micro-size patterns
US5880838A (en) 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
EP0847895B1 (en) 1996-12-13 2001-08-01 Denso Corporation Apparatus for automatically adjusting aiming of headlights of an automotive vehicle
US5949547A (en) * 1997-02-20 1999-09-07 Taiwan Semiconductor Manufacturing Company, Ltd. System for in-line monitoring of photo processing in VLSI fabrication
US5867276A (en) 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
US6081334A (en) 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6514648B2 (en) 1998-08-28 2003-02-04 International Business Machines Corporation Method to produce equal sized features in microlithography
US6272392B1 (en) 1998-12-04 2001-08-07 Advanced Micro Devices, Inc. Methodology for extracting effective lens aberrations using a neural network
DE19922614A1 (de) * 1998-12-04 2000-06-15 Fraunhofer Ges Forschung Verfahren und Vorrichtung zur optischen Kontrolle von Fertigungsprozessen feinstrukturierter Oberflächen in der Halbleiterfertigung
US6245584B1 (en) 1999-07-01 2001-06-12 Advanced Micro Devices Method for detecting adjustment error in photolithographic stepping printer
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US6384408B1 (en) * 1999-08-11 2002-05-07 Kla-Tencor Corporation Calibration of a scanning electron microscope
US6051348A (en) 1999-08-17 2000-04-18 Advanced Micro Devices Method for detecting malfunction in photolithographic fabrication track
FR2812755B1 (fr) * 2000-08-04 2002-10-31 St Microelectronics Sa Inductance integree
US6556652B1 (en) 2000-08-09 2003-04-29 Jordan Valley Applied Radiation Ltd. Measurement of critical dimensions using X-rays
US6782337B2 (en) * 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6354133B1 (en) * 2000-10-25 2002-03-12 Advanced Micro Devices, Inc. Use of carbon nanotubes to calibrate conventional tips used in AFM
TW519746B (en) * 2001-01-26 2003-02-01 Timbre Tech Inc System and method for characterizing macro-grating test patterns in advanced lithography and etch processes
US6433878B1 (en) * 2001-01-29 2002-08-13 Timbre Technology, Inc. Method and apparatus for the determination of mask rules using scatterometry
US6650422B2 (en) 2001-03-26 2003-11-18 Advanced Micro Devices, Inc. Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith
US6563578B2 (en) * 2001-04-02 2003-05-13 Advanced Micro Devices, Inc. In-situ thickness measurement for use in semiconductor processing
JP4348412B2 (ja) * 2001-04-26 2009-10-21 東京エレクトロン株式会社 計測システムクラスター
US6545753B2 (en) * 2001-06-27 2003-04-08 Advanced Micro Devices, Inc. Using scatterometry for etch end points for dual damascene process
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
US6583871B1 (en) * 2001-07-23 2003-06-24 Advanced Micro Devices, Inc. System and method to measure closed area defects
US6448097B1 (en) * 2001-07-23 2002-09-10 Advanced Micro Devices Inc. Measure fluorescence from chemical released during trim etch
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures

Similar Documents

Publication Publication Date Title
JP2005521261A5 (https=)
JP5616627B2 (ja) ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法
TWI429896B (zh) 橢圓偏光測定儀器及監控製程之方法
JP5959648B2 (ja) プロセス認識メトロロジー
US7838309B1 (en) Measurement and control of strained devices
US7522294B2 (en) Measuring a process parameter of a semiconductor fabrication process using optical metrology
US7515279B2 (en) Line profile asymmetry measurement
KR102002180B1 (ko) 구조의 비대칭성을 결정하는 방법
WO2007117434A3 (en) Measuring a damaged structure formed on a wafer using optical metrology
JP2010533376A5 (https=)
CN1774639A (zh) 用于现场监视器和膜厚及沟槽深度控制的系统和方法
KR20160121206A (ko) 오버레이 에러의 검출 방법 및 이를 이용한 반도체 장치의 제조 방법
US9091942B2 (en) Scatterometry measurement of line edge roughness in the bright field
WO2007123762A3 (en) Damage assessment of a wafer using optical metrology
JP2006038779A5 (https=)
CN101469973B (zh) 测量方法
TW201543016A (zh) 半導體晶圓應力分析
US7505148B2 (en) Matching optical metrology tools using spectra enhancement
WO2005028992A2 (en) Line profile asymmetry measurement
EP2567209B1 (en) Determination of material optical properties for optical metrology of structures
US20080117437A1 (en) Drift compensation for an optical metrology tool
Levi et al. A holistic metrology sensitivity study for pattern roughness quantification on EUV patterned device structures with mask design induced roughness
US7365864B2 (en) Method of determining properties of patterned thin film metal structures using transient thermal response
Bodermann et al. Development of a scatterometry reference standard
Eichelberger et al. Simultaneous dose and focus monitoring on product wafers