JP4852016B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4852016B2
JP4852016B2 JP2007280304A JP2007280304A JP4852016B2 JP 4852016 B2 JP4852016 B2 JP 4852016B2 JP 2007280304 A JP2007280304 A JP 2007280304A JP 2007280304 A JP2007280304 A JP 2007280304A JP 4852016 B2 JP4852016 B2 JP 4852016B2
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JP
Japan
Prior art keywords
silicon nitride
film
light receiving
nitride film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007280304A
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English (en)
Japanese (ja)
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JP2009111059A5 (enExample
JP2009111059A (ja
Inventor
塚 眞 理 大
條 浩 幸 上
川 秀 明 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2007280304A priority Critical patent/JP4852016B2/ja
Priority to TW097141452A priority patent/TWI406401B/zh
Priority to US12/259,732 priority patent/US8053268B2/en
Priority to CN2008101738224A priority patent/CN101425525B/zh
Publication of JP2009111059A publication Critical patent/JP2009111059A/ja
Publication of JP2009111059A5 publication Critical patent/JP2009111059A5/ja
Priority to US13/163,529 priority patent/US20110248368A1/en
Application granted granted Critical
Publication of JP4852016B2 publication Critical patent/JP4852016B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
JP2007280304A 2007-10-29 2007-10-29 半導体装置及びその製造方法 Expired - Fee Related JP4852016B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007280304A JP4852016B2 (ja) 2007-10-29 2007-10-29 半導体装置及びその製造方法
TW097141452A TWI406401B (zh) 2007-10-29 2008-10-28 半導體裝置及其製造方法
US12/259,732 US8053268B2 (en) 2007-10-29 2008-10-28 Semiconductor device and method of manufacturing the same
CN2008101738224A CN101425525B (zh) 2007-10-29 2008-10-29 半导体器件及其制造方法
US13/163,529 US20110248368A1 (en) 2007-10-29 2011-06-17 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007280304A JP4852016B2 (ja) 2007-10-29 2007-10-29 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2009111059A JP2009111059A (ja) 2009-05-21
JP2009111059A5 JP2009111059A5 (enExample) 2011-03-03
JP4852016B2 true JP4852016B2 (ja) 2012-01-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007280304A Expired - Fee Related JP4852016B2 (ja) 2007-10-29 2007-10-29 半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US8053268B2 (enExample)
JP (1) JP4852016B2 (enExample)
CN (1) CN101425525B (enExample)
TW (1) TWI406401B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5284438B2 (ja) 2011-02-09 2013-09-11 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
JPWO2014112002A1 (ja) * 2013-01-15 2017-01-19 オリンパス株式会社 撮像素子、及び撮像装置
US11127910B2 (en) 2016-03-31 2021-09-21 Sony Corporation Imaging device and electronic apparatus
CN106328723B (zh) * 2016-11-04 2018-02-06 东莞南玻光伏科技有限公司 抗pid电池片的制备方法及光伏组件

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
JPH0529598A (ja) * 1991-07-19 1993-02-05 Hitachi Ltd 固体撮像素子
JP3201010B2 (ja) * 1992-09-24 2001-08-20 ソニー株式会社 固体撮像素子とその製造方法
JP3545288B2 (ja) * 1999-11-08 2004-07-21 三菱電機株式会社 イメージセンサ
JP4123060B2 (ja) * 2003-06-11 2008-07-23 ソニー株式会社 固体撮像素子及びその製造方法
JP2005311015A (ja) * 2004-04-21 2005-11-04 Sony Corp 固体撮像素子およびその製造方法
JP2006147661A (ja) * 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd 受光装置とその製造方法およびカメラ
KR100666371B1 (ko) * 2004-12-23 2007-01-09 삼성전자주식회사 이미지 소자의 제조 방법
US7342268B2 (en) 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
KR100807214B1 (ko) * 2005-02-14 2008-03-03 삼성전자주식회사 향상된 감도를 갖는 이미지 센서 및 그 제조 방법
JP2006229206A (ja) * 2005-02-14 2006-08-31 Samsung Electronics Co Ltd 向上された感度を有するイメージセンサ及びその製造方法
JP4621048B2 (ja) * 2005-03-25 2011-01-26 富士通セミコンダクター株式会社 固体撮像素子
KR100687102B1 (ko) 2005-03-30 2007-02-26 삼성전자주식회사 이미지 센서 및 그 제조 방법.
JP4967291B2 (ja) * 2005-09-22 2012-07-04 ソニー株式会社 固体撮像装置の製造方法
US7498270B2 (en) * 2005-09-30 2009-03-03 Tokyo Electron Limited Method of forming a silicon oxynitride film with tensile stress
KR100731128B1 (ko) 2005-12-28 2007-06-22 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 제조방법
JP2007227445A (ja) 2006-02-21 2007-09-06 Sanyo Electric Co Ltd 半導体装置及びその製造方法
KR100781545B1 (ko) 2006-08-11 2007-12-03 삼성전자주식회사 감도가 향상된 이미지 센서 및 그의 제조방법

Also Published As

Publication number Publication date
CN101425525A (zh) 2009-05-06
CN101425525B (zh) 2011-09-14
US20110248368A1 (en) 2011-10-13
US20090108388A1 (en) 2009-04-30
TWI406401B (zh) 2013-08-21
TW200919714A (en) 2009-05-01
US8053268B2 (en) 2011-11-08
JP2009111059A (ja) 2009-05-21

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