TWI406401B - 半導體裝置及其製造方法 - Google Patents
半導體裝置及其製造方法 Download PDFInfo
- Publication number
- TWI406401B TWI406401B TW097141452A TW97141452A TWI406401B TW I406401 B TWI406401 B TW I406401B TW 097141452 A TW097141452 A TW 097141452A TW 97141452 A TW97141452 A TW 97141452A TW I406401 B TWI406401 B TW I406401B
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- tantalum nitride
- nitride film
- light receiving
- forming
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000010410 layer Substances 0.000 claims abstract description 77
- 239000011229 interlayer Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 16
- 230000002093 peripheral effect Effects 0.000 claims description 14
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims 6
- 239000004744 fabric Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 230000003449 preventive effect Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007280304A JP4852016B2 (ja) | 2007-10-29 | 2007-10-29 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200919714A TW200919714A (en) | 2009-05-01 |
| TWI406401B true TWI406401B (zh) | 2013-08-21 |
Family
ID=40581758
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097141452A TWI406401B (zh) | 2007-10-29 | 2008-10-28 | 半導體裝置及其製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8053268B2 (enExample) |
| JP (1) | JP4852016B2 (enExample) |
| CN (1) | CN101425525B (enExample) |
| TW (1) | TWI406401B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5284438B2 (ja) | 2011-02-09 | 2013-09-11 | キヤノン株式会社 | 固体撮像装置、及び固体撮像装置の製造方法 |
| JPWO2014112002A1 (ja) * | 2013-01-15 | 2017-01-19 | オリンパス株式会社 | 撮像素子、及び撮像装置 |
| US11127910B2 (en) | 2016-03-31 | 2021-09-21 | Sony Corporation | Imaging device and electronic apparatus |
| CN106328723B (zh) * | 2016-11-04 | 2018-02-06 | 东莞南玻光伏科技有限公司 | 抗pid电池片的制备方法及光伏组件 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001136341A (ja) * | 1999-11-08 | 2001-05-18 | Mitsubishi Electric Corp | イメージセンサ |
| JP2005005472A (ja) * | 2003-06-11 | 2005-01-06 | Sony Corp | 固体撮像素子 |
| JP2006229206A (ja) * | 2005-02-14 | 2006-08-31 | Samsung Electronics Co Ltd | 向上された感度を有するイメージセンサ及びその製造方法 |
| JP2007088306A (ja) * | 2005-09-22 | 2007-04-05 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4962065A (en) * | 1989-02-13 | 1990-10-09 | The University Of Arkansas | Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices |
| JPH0529598A (ja) * | 1991-07-19 | 1993-02-05 | Hitachi Ltd | 固体撮像素子 |
| JP3201010B2 (ja) * | 1992-09-24 | 2001-08-20 | ソニー株式会社 | 固体撮像素子とその製造方法 |
| JP2005311015A (ja) * | 2004-04-21 | 2005-11-04 | Sony Corp | 固体撮像素子およびその製造方法 |
| JP2006147661A (ja) * | 2004-11-16 | 2006-06-08 | Matsushita Electric Ind Co Ltd | 受光装置とその製造方法およびカメラ |
| KR100666371B1 (ko) * | 2004-12-23 | 2007-01-09 | 삼성전자주식회사 | 이미지 소자의 제조 방법 |
| US7342268B2 (en) | 2004-12-23 | 2008-03-11 | International Business Machines Corporation | CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom |
| KR100807214B1 (ko) * | 2005-02-14 | 2008-03-03 | 삼성전자주식회사 | 향상된 감도를 갖는 이미지 센서 및 그 제조 방법 |
| JP4621048B2 (ja) * | 2005-03-25 | 2011-01-26 | 富士通セミコンダクター株式会社 | 固体撮像素子 |
| KR100687102B1 (ko) | 2005-03-30 | 2007-02-26 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법. |
| US7498270B2 (en) * | 2005-09-30 | 2009-03-03 | Tokyo Electron Limited | Method of forming a silicon oxynitride film with tensile stress |
| KR100731128B1 (ko) | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
| JP2007227445A (ja) | 2006-02-21 | 2007-09-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| KR100781545B1 (ko) | 2006-08-11 | 2007-12-03 | 삼성전자주식회사 | 감도가 향상된 이미지 센서 및 그의 제조방법 |
-
2007
- 2007-10-29 JP JP2007280304A patent/JP4852016B2/ja not_active Expired - Fee Related
-
2008
- 2008-10-28 US US12/259,732 patent/US8053268B2/en not_active Expired - Fee Related
- 2008-10-28 TW TW097141452A patent/TWI406401B/zh not_active IP Right Cessation
- 2008-10-29 CN CN2008101738224A patent/CN101425525B/zh not_active Expired - Fee Related
-
2011
- 2011-06-17 US US13/163,529 patent/US20110248368A1/en not_active Abandoned
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001136341A (ja) * | 1999-11-08 | 2001-05-18 | Mitsubishi Electric Corp | イメージセンサ |
| JP2005005472A (ja) * | 2003-06-11 | 2005-01-06 | Sony Corp | 固体撮像素子 |
| JP2006229206A (ja) * | 2005-02-14 | 2006-08-31 | Samsung Electronics Co Ltd | 向上された感度を有するイメージセンサ及びその製造方法 |
| JP2007088306A (ja) * | 2005-09-22 | 2007-04-05 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置およびカメラ |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101425525A (zh) | 2009-05-06 |
| JP4852016B2 (ja) | 2012-01-11 |
| CN101425525B (zh) | 2011-09-14 |
| US20110248368A1 (en) | 2011-10-13 |
| US20090108388A1 (en) | 2009-04-30 |
| TW200919714A (en) | 2009-05-01 |
| US8053268B2 (en) | 2011-11-08 |
| JP2009111059A (ja) | 2009-05-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |