CN101425525B - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN101425525B
CN101425525B CN2008101738224A CN200810173822A CN101425525B CN 101425525 B CN101425525 B CN 101425525B CN 2008101738224 A CN2008101738224 A CN 2008101738224A CN 200810173822 A CN200810173822 A CN 200810173822A CN 101425525 B CN101425525 B CN 101425525B
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CN
China
Prior art keywords
silicon nitride
film
nitride film
concentration
light receiving
Prior art date
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Expired - Fee Related
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CN2008101738224A
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English (en)
Chinese (zh)
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CN101425525A (zh
Inventor
大塚真理
上条浩幸
原川秀明
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Toshiba Corp
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Toshiba Corp
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Publication of CN101425525A publication Critical patent/CN101425525A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

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  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
CN2008101738224A 2007-10-29 2008-10-29 半导体器件及其制造方法 Expired - Fee Related CN101425525B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007280304A JP4852016B2 (ja) 2007-10-29 2007-10-29 半導体装置及びその製造方法
JP2007280304 2007-10-29
JP2007-280304 2007-10-29

Publications (2)

Publication Number Publication Date
CN101425525A CN101425525A (zh) 2009-05-06
CN101425525B true CN101425525B (zh) 2011-09-14

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CN2008101738224A Expired - Fee Related CN101425525B (zh) 2007-10-29 2008-10-29 半导体器件及其制造方法

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US (2) US8053268B2 (enExample)
JP (1) JP4852016B2 (enExample)
CN (1) CN101425525B (enExample)
TW (1) TWI406401B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5284438B2 (ja) 2011-02-09 2013-09-11 キヤノン株式会社 固体撮像装置、及び固体撮像装置の製造方法
JPWO2014112002A1 (ja) * 2013-01-15 2017-01-19 オリンパス株式会社 撮像素子、及び撮像装置
US11127910B2 (en) 2016-03-31 2021-09-21 Sony Corporation Imaging device and electronic apparatus
CN106328723B (zh) * 2016-11-04 2018-02-06 东莞南玻光伏科技有限公司 抗pid电池片的制备方法及光伏组件

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1992212A (zh) * 2005-12-28 2007-07-04 东部电子股份有限公司 制造cmos图像传感器的方法
CN101026173A (zh) * 2006-02-21 2007-08-29 三洋电机株式会社 半导体装置及其制造方法

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US4962065A (en) * 1989-02-13 1990-10-09 The University Of Arkansas Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices
JPH0529598A (ja) * 1991-07-19 1993-02-05 Hitachi Ltd 固体撮像素子
JP3201010B2 (ja) * 1992-09-24 2001-08-20 ソニー株式会社 固体撮像素子とその製造方法
JP3545288B2 (ja) * 1999-11-08 2004-07-21 三菱電機株式会社 イメージセンサ
JP4123060B2 (ja) * 2003-06-11 2008-07-23 ソニー株式会社 固体撮像素子及びその製造方法
JP2005311015A (ja) * 2004-04-21 2005-11-04 Sony Corp 固体撮像素子およびその製造方法
JP2006147661A (ja) * 2004-11-16 2006-06-08 Matsushita Electric Ind Co Ltd 受光装置とその製造方法およびカメラ
KR100666371B1 (ko) * 2004-12-23 2007-01-09 삼성전자주식회사 이미지 소자의 제조 방법
US7342268B2 (en) 2004-12-23 2008-03-11 International Business Machines Corporation CMOS imager with Cu wiring and method of eliminating high reflectivity interfaces therefrom
KR100807214B1 (ko) * 2005-02-14 2008-03-03 삼성전자주식회사 향상된 감도를 갖는 이미지 센서 및 그 제조 방법
JP2006229206A (ja) * 2005-02-14 2006-08-31 Samsung Electronics Co Ltd 向上された感度を有するイメージセンサ及びその製造方法
JP4621048B2 (ja) * 2005-03-25 2011-01-26 富士通セミコンダクター株式会社 固体撮像素子
KR100687102B1 (ko) 2005-03-30 2007-02-26 삼성전자주식회사 이미지 센서 및 그 제조 방법.
JP4967291B2 (ja) * 2005-09-22 2012-07-04 ソニー株式会社 固体撮像装置の製造方法
US7498270B2 (en) * 2005-09-30 2009-03-03 Tokyo Electron Limited Method of forming a silicon oxynitride film with tensile stress
KR100781545B1 (ko) 2006-08-11 2007-12-03 삼성전자주식회사 감도가 향상된 이미지 센서 및 그의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1992212A (zh) * 2005-12-28 2007-07-04 东部电子股份有限公司 制造cmos图像传感器的方法
CN101026173A (zh) * 2006-02-21 2007-08-29 三洋电机株式会社 半导体装置及其制造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
F.Ay, A.Aydinli.Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides.《Optical Materials》.2004,第26卷33-46. *

Also Published As

Publication number Publication date
CN101425525A (zh) 2009-05-06
JP4852016B2 (ja) 2012-01-11
US20110248368A1 (en) 2011-10-13
US20090108388A1 (en) 2009-04-30
TWI406401B (zh) 2013-08-21
TW200919714A (en) 2009-05-01
US8053268B2 (en) 2011-11-08
JP2009111059A (ja) 2009-05-21

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Termination date: 20161029