JP4836796B2 - 電源システム抑止方法ならびにその装置および構造 - Google Patents

電源システム抑止方法ならびにその装置および構造 Download PDF

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Publication number
JP4836796B2
JP4836796B2 JP2006535492A JP2006535492A JP4836796B2 JP 4836796 B2 JP4836796 B2 JP 4836796B2 JP 2006535492 A JP2006535492 A JP 2006535492A JP 2006535492 A JP2006535492 A JP 2006535492A JP 4836796 B2 JP4836796 B2 JP 4836796B2
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Prior art keywords
transistor
output
voltage
region
perimeter
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Expired - Lifetime
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JP2006535492A
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Japanese (ja)
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JP2007509493A (ja
JP2007509493A5 (enExample
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ハラミク，ヨセフ
ホール，ジェファーソン，ダブリュー
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Amplifiers (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Revetment (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
  • Lock And Its Accessories (AREA)
JP2006535492A 2003-10-14 2004-09-10 電源システム抑止方法ならびにその装置および構造 Expired - Lifetime JP4836796B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/685,091 US6943069B2 (en) 2003-10-14 2003-10-14 Power system inhibit method and device and structure therefor
US10/685,091 2003-10-14
PCT/US2004/029297 WO2005040952A2 (en) 2003-10-14 2004-09-10 Power system inhibit method and device and structure therefor

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011179260A Division JP5602111B2 (ja) 2003-10-14 2011-08-18 電源制御システム抑止方法

Publications (3)

Publication Number Publication Date
JP2007509493A JP2007509493A (ja) 2007-04-12
JP2007509493A5 JP2007509493A5 (enExample) 2007-09-13
JP4836796B2 true JP4836796B2 (ja) 2011-12-14

Family

ID=34423095

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006535492A Expired - Lifetime JP4836796B2 (ja) 2003-10-14 2004-09-10 電源システム抑止方法ならびにその装置および構造
JP2011179260A Expired - Lifetime JP5602111B2 (ja) 2003-10-14 2011-08-18 電源制御システム抑止方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011179260A Expired - Lifetime JP5602111B2 (ja) 2003-10-14 2011-08-18 電源制御システム抑止方法

Country Status (9)

Country Link
US (3) US6943069B2 (enExample)
EP (2) EP1843470B1 (enExample)
JP (2) JP4836796B2 (enExample)
KR (1) KR101137242B1 (enExample)
CN (2) CN101106130B (enExample)
AT (2) ATE388433T1 (enExample)
DE (2) DE602004012305T2 (enExample)
TW (1) TWI339324B (enExample)
WO (1) WO2005040952A2 (enExample)

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US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
US7306999B2 (en) * 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7477532B2 (en) * 2005-08-18 2009-01-13 Semiconductor Components Industries, L.L.C. Method of forming a start-up device and structure therefor
CN100495881C (zh) * 2005-12-21 2009-06-03 昂宝电子（上海）有限公司 用于驱动双极晶体管的系统和用于控制电源变换器的系统
JP5343306B2 (ja) 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP5564749B2 (ja) * 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US7564704B2 (en) * 2006-12-05 2009-07-21 Semiconductor Components Industries, L.L.C. Method of forming a power supply controller and structure therefor
KR20080111333A (ko) * 2007-06-18 2008-12-23 삼성전기주식회사 전압 검출 소자 및 이를 이용한 ａｄ 컨버터
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置
JP5217544B2 (ja) * 2008-03-19 2013-06-19 富士電機株式会社 スイッチング電源制御用半導体装置、起動回路、およびスイッチング電源装置の起動方法
US8207580B2 (en) * 2009-05-29 2012-06-26 Power Integrations, Inc. Power integrated circuit device with incorporated sense FET
TWI503956B (zh) 2009-09-30 2015-10-11 Semiconductor Components Ind 高電壓感測器設備及其方法
US8411471B2 (en) 2010-06-18 2013-04-02 Infineon Technologies Ag Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor
JP5589827B2 (ja) 2010-12-24 2014-09-17 サンケン電気株式会社 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置
JP2012161117A (ja) * 2011-01-28 2012-08-23 Rohm Co Ltd Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US9048747B2 (en) 2011-11-23 2015-06-02 Zahid Ansari Switched-mode power supply startup circuit, method, and system incorporating same
US20130271102A1 (en) * 2012-04-12 2013-10-17 Roger Lin Power supply control structure
JP6070164B2 (ja) * 2012-12-21 2017-02-01 サンケン電気株式会社 スイッチング電源装置
US9467061B2 (en) * 2014-08-29 2016-10-11 Infineon Technologies Austria Ag System and method for driving a transistor
US10340686B2 (en) 2014-12-11 2019-07-02 Denso Corporation Electronic device
CN106298768B (zh) * 2015-06-10 2019-03-19 联华电子股份有限公司 半导体元件及半导体元件的操作方法
JP6072881B2 (ja) * 2015-11-04 2017-02-01 ローム株式会社 Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US10910822B2 (en) * 2018-07-06 2021-02-02 Texas Instruments Incorporated Control of a power transistor with a drive circuit
US10679938B2 (en) * 2018-07-31 2020-06-09 Texas Instruments Incorporated Power transistor coupled to multiple sense transistors

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JPS61290767A (ja) * 1985-06-19 1986-12-20 Hitachi Ltd Ｍｏｓ電界効果トランジスタ
JPS6281054A (ja) * 1985-10-04 1987-04-14 Nec Corp 半導体装置
JPH06165485A (ja) * 1992-09-01 1994-06-10 Power Integrations Inc 電源装置
JPH06291263A (ja) * 1993-02-16 1994-10-18 Power Integrations Inc 低オン抵抗の高電圧ｍｏｓトランジスタ
JPH07236229A (ja) * 1993-10-25 1995-09-05 Motorola Inc オフラインブートストラップ型スタートアップ回路
JP2002542629A (ja) * 1999-04-21 2002-12-10 インフィネオン テクノロジース アクチエンゲゼルシャフト 半導体素子

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JP3645165B2 (ja) * 2000-10-02 2005-05-11 オリンパス株式会社 給電制御装置
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Publication number Priority date Publication date Assignee Title
JPS61290767A (ja) * 1985-06-19 1986-12-20 Hitachi Ltd Ｍｏｓ電界効果トランジスタ
JPS6281054A (ja) * 1985-10-04 1987-04-14 Nec Corp 半導体装置
JPH06165485A (ja) * 1992-09-01 1994-06-10 Power Integrations Inc 電源装置
JPH06291263A (ja) * 1993-02-16 1994-10-18 Power Integrations Inc 低オン抵抗の高電圧ｍｏｓトランジスタ
JPH07236229A (ja) * 1993-10-25 1995-09-05 Motorola Inc オフラインブートストラップ型スタートアップ回路
JP2002542629A (ja) * 1999-04-21 2002-12-10 インフィネオン テクノロジース アクチエンゲゼルシャフト 半導体素子

Also Published As

Publication number Publication date
CN100458638C (zh) 2009-02-04
HK1114945A1 (zh) 2008-11-14
TW200513822A (en) 2005-04-16
ATE388433T1 (de) 2008-03-15
CN1864115A (zh) 2006-11-15
EP1843470A1 (en) 2007-10-10
EP1673671A2 (en) 2006-06-28
HK1095393A1 (zh) 2007-05-04
JP5602111B2 (ja) 2014-10-08
US20050225362A1 (en) 2005-10-13
EP1843470B1 (en) 2009-08-05
WO2005040952A3 (en) 2005-08-04
DE602004012305T2 (de) 2009-03-19
EP1673671B1 (en) 2008-03-05
DE602004022470D1 (de) 2009-09-17
ATE438953T1 (de) 2009-08-15
JP2007509493A (ja) 2007-04-12
CN101106130B (zh) 2010-06-02
TWI339324B (en) 2011-03-21
WO2005040952A2 (en) 2005-05-06
CN101106130A (zh) 2008-01-16
US20070190700A1 (en) 2007-08-16
US6943069B2 (en) 2005-09-13
KR101137242B1 (ko) 2012-04-26
US7227203B2 (en) 2007-06-05
JP2012023953A (ja) 2012-02-02
US7826238B2 (en) 2010-11-02
US20050077551A1 (en) 2005-04-14
KR20110039579A (ko) 2011-04-19
DE602004012305D1 (de) 2008-04-17

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