TWI339324B - Power system inhibit method and device and structure therefor - Google Patents
Power system inhibit method and device and structure therefor Download PDFInfo
- Publication number
- TWI339324B TWI339324B TW093126276A TW93126276A TWI339324B TW I339324 B TWI339324 B TW I339324B TW 093126276 A TW093126276 A TW 093126276A TW 93126276 A TW93126276 A TW 93126276A TW I339324 B TWI339324 B TW I339324B
- Authority
- TW
- Taiwan
- Prior art keywords
- output
- current
- transistor
- region
- voltage
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000001629 suppression Effects 0.000 claims description 3
- 241000218645 Cedrus Species 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000003071 parasitic effect Effects 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 210000002700 urine Anatomy 0.000 claims 1
- 239000012212 insulator Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000001939 inductive effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
- H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits
Landscapes
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Amplifiers (AREA)
- Direct Current Feeding And Distribution (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Revetment (AREA)
- Steering Control In Accordance With Driving Conditions (AREA)
- Lock And Its Accessories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/685,091 US6943069B2 (en) | 2003-10-14 | 2003-10-14 | Power system inhibit method and device and structure therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200513822A TW200513822A (en) | 2005-04-16 |
| TWI339324B true TWI339324B (en) | 2011-03-21 |
Family
ID=34423095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093126276A TWI339324B (en) | 2003-10-14 | 2004-08-31 | Power system inhibit method and device and structure therefor |
Country Status (9)
| Country | Link |
|---|---|
| US (3) | US6943069B2 (enExample) |
| EP (2) | EP1843470B1 (enExample) |
| JP (2) | JP4836796B2 (enExample) |
| KR (1) | KR101137242B1 (enExample) |
| CN (2) | CN100458638C (enExample) |
| AT (2) | ATE438953T1 (enExample) |
| DE (2) | DE602004022470D1 (enExample) |
| TW (1) | TWI339324B (enExample) |
| WO (1) | WO2005040952A2 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060086974A1 (en) * | 2004-10-26 | 2006-04-27 | Power Integrations, Inc. | Integrated circuit with multi-length power transistor segments |
| US7135748B2 (en) * | 2004-10-26 | 2006-11-14 | Power Integrations, Inc. | Integrated circuit with multi-length output transistor segment |
| US7306999B2 (en) * | 2005-01-25 | 2007-12-11 | Semiconductor Components Industries, L.L.C. | High voltage sensor device and method therefor |
| US7955943B2 (en) * | 2005-01-25 | 2011-06-07 | Semiconductor Components Industries, Llc | High voltage sensor device and method therefor |
| US7477532B2 (en) | 2005-08-18 | 2009-01-13 | Semiconductor Components Industries, L.L.C. | Method of forming a start-up device and structure therefor |
| CN100495881C (zh) * | 2005-12-21 | 2009-06-03 | 昂宝电子（上海）有限公司 | 用于驱动双极晶体管的系统和用于控制电源变换器的系统 |
| JP5343306B2 (ja) * | 2006-03-24 | 2013-11-13 | 富士電機株式会社 | スイッチング電源用ｉｃおよびスイッチング電源 |
| JP5564749B2 (ja) * | 2006-11-20 | 2014-08-06 | 富士電機株式会社 | 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置 |
| US7564704B2 (en) * | 2006-12-05 | 2009-07-21 | Semiconductor Components Industries, L.L.C. | Method of forming a power supply controller and structure therefor |
| KR20080111333A (ko) * | 2007-06-18 | 2008-12-23 | 삼성전기주식회사 | 전압 검출 소자 및 이를 이용한 ａｄ 컨버터 |
| JP2009147001A (ja) * | 2007-12-12 | 2009-07-02 | Seiko Instruments Inc | 半導体装置 |
| JP5217544B2 (ja) * | 2008-03-19 | 2013-06-19 | 富士電機株式会社 | スイッチング電源制御用半導体装置、起動回路、およびスイッチング電源装置の起動方法 |
| US8207580B2 (en) * | 2009-05-29 | 2012-06-26 | Power Integrations, Inc. | Power integrated circuit device with incorporated sense FET |
| TWI503956B (zh) | 2009-09-30 | 2015-10-11 | Semiconductor Components Ind | 高電壓感測器設備及其方法 |
| US8411471B2 (en) | 2010-06-18 | 2013-04-02 | Infineon Technologies Ag | Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor |
| JP5589827B2 (ja) * | 2010-12-24 | 2014-09-17 | サンケン電気株式会社 | 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置 |
| JP2012161117A (ja) * | 2011-01-28 | 2012-08-23 | Rohm Co Ltd | Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器 |
| US9048747B2 (en) | 2011-11-23 | 2015-06-02 | Zahid Ansari | Switched-mode power supply startup circuit, method, and system incorporating same |
| US20130271102A1 (en) * | 2012-04-12 | 2013-10-17 | Roger Lin | Power supply control structure |
| JP6070164B2 (ja) * | 2012-12-21 | 2017-02-01 | サンケン電気株式会社 | スイッチング電源装置 |
| US9467061B2 (en) * | 2014-08-29 | 2016-10-11 | Infineon Technologies Austria Ag | System and method for driving a transistor |
| US10340686B2 (en) | 2014-12-11 | 2019-07-02 | Denso Corporation | Electronic device |
| CN106298768B (zh) * | 2015-06-10 | 2019-03-19 | 联华电子股份有限公司 | 半导体元件及半导体元件的操作方法 |
| JP6072881B2 (ja) * | 2015-11-04 | 2017-02-01 | ローム株式会社 | Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器 |
| US10910822B2 (en) * | 2018-07-06 | 2021-02-02 | Texas Instruments Incorporated | Control of a power transistor with a drive circuit |
| US10679938B2 (en) * | 2018-07-31 | 2020-06-09 | Texas Instruments Incorporated | Power transistor coupled to multiple sense transistors |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4370701A (en) * | 1981-04-24 | 1983-01-25 | Rockwell International Corporation | Energy conserving drive circuit for switched mode converter utilizing current snubber apparatus |
| US4450338A (en) * | 1982-05-04 | 1984-05-22 | Tre Corporation | Method of fabricating a truss core sandwich panel |
| JPS61290767A (ja) * | 1985-06-19 | 1986-12-20 | Hitachi Ltd | Ｍｏｓ電界効果トランジスタ |
| JPS6281054A (ja) * | 1985-10-04 | 1987-04-14 | Nec Corp | 半導体装置 |
| US4811075A (en) * | 1987-04-24 | 1989-03-07 | Power Integrations, Inc. | High voltage MOS transistors |
| US5285369A (en) * | 1992-09-01 | 1994-02-08 | Power Integrations, Inc. | Switched mode power supply integrated circuit with start-up self-biasing |
| US5313082A (en) * | 1993-02-16 | 1994-05-17 | Power Integrations, Inc. | High voltage MOS transistor with a low on-resistance |
| US5477175A (en) * | 1993-10-25 | 1995-12-19 | Motorola | Off-line bootstrap startup circuit |
| JPH07123709A (ja) * | 1993-10-28 | 1995-05-12 | Matsushita Electric Ind Co Ltd | 電源装置 |
| CA2172890C (en) * | 1995-06-06 | 2005-02-22 | Harold R. Schnetzka | Switch driver circuit |
| US6127700A (en) * | 1995-09-12 | 2000-10-03 | National Semiconductor Corporation | Field-effect transistor having local threshold-adjust doping |
| TW432276B (en) * | 1997-03-08 | 2001-05-01 | Acer Peripherals Inc | Power-saving type power-supply with the capability of quickly restoring the start |
| JPH10309078A (ja) * | 1997-04-30 | 1998-11-17 | Canon Inc | スイッチング型直流電源装置 |
| US5892389A (en) * | 1997-06-03 | 1999-04-06 | Motorola, Inc. | Method and circuit for current limiting of DC-DC regulators |
| DE19918028A1 (de) * | 1999-04-21 | 2000-11-02 | Siemens Ag | Halbleiter-Bauelement |
| US6204655B1 (en) * | 1999-11-01 | 2001-03-20 | Maxim Integrated Products, Inc. | Voltage-controlled current source with variable supply current |
| JP3664061B2 (ja) * | 1999-12-28 | 2005-06-22 | 日産自動車株式会社 | 電流制御型半導体素子用駆動回路 |
| US6259618B1 (en) * | 2000-05-03 | 2001-07-10 | Analog And Power Electronics Corp. | Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup |
| JP3645165B2 (ja) * | 2000-10-02 | 2005-05-11 | オリンパス株式会社 | 給電制御装置 |
| US6528980B1 (en) * | 2001-03-22 | 2003-03-04 | National Semiconductor Corporation | Method and system for multiple bias current generator circuits that start each other |
| IL153606A0 (en) * | 2002-12-24 | 2003-07-06 | Lightech Electronics Ind Ltd | Energy saving startup circuit for power supply |
| US6940320B2 (en) * | 2003-10-14 | 2005-09-06 | Semiconductor Components Industries, L.L.C. | Power control system startup method and circuit |
-
2003
- 2003-10-14 US US10/685,091 patent/US6943069B2/en not_active Expired - Lifetime
-
2004
- 2004-08-31 TW TW093126276A patent/TWI339324B/zh not_active IP Right Cessation
- 2004-09-10 EP EP07013802A patent/EP1843470B1/en not_active Expired - Lifetime
- 2004-09-10 AT AT07013802T patent/ATE438953T1/de not_active IP Right Cessation
- 2004-09-10 AT AT04783516T patent/ATE388433T1/de not_active IP Right Cessation
- 2004-09-10 JP JP2006535492A patent/JP4836796B2/ja not_active Expired - Lifetime
- 2004-09-10 DE DE602004022470T patent/DE602004022470D1/de not_active Expired - Lifetime
- 2004-09-10 CN CNB2004800289656A patent/CN100458638C/zh not_active Expired - Lifetime
- 2004-09-10 CN CN2007101481795A patent/CN101106130B/zh not_active Expired - Lifetime
- 2004-09-10 DE DE602004012305T patent/DE602004012305T2/de not_active Expired - Lifetime
- 2004-09-10 EP EP04783516A patent/EP1673671B1/en not_active Expired - Lifetime
- 2004-09-10 KR KR1020117005366A patent/KR101137242B1/ko not_active Expired - Fee Related
- 2004-09-10 WO PCT/US2004/029297 patent/WO2005040952A2/en not_active Ceased
-
2005
- 2005-06-08 US US11/146,772 patent/US7227203B2/en not_active Expired - Lifetime
-
2007
- 2007-04-16 US US11/735,893 patent/US7826238B2/en active Active
-
2011
- 2011-08-18 JP JP2011179260A patent/JP5602111B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP5602111B2 (ja) | 2014-10-08 |
| WO2005040952A3 (en) | 2005-08-04 |
| CN101106130A (zh) | 2008-01-16 |
| TW200513822A (en) | 2005-04-16 |
| EP1673671B1 (en) | 2008-03-05 |
| US6943069B2 (en) | 2005-09-13 |
| KR101137242B1 (ko) | 2012-04-26 |
| DE602004012305T2 (de) | 2009-03-19 |
| CN100458638C (zh) | 2009-02-04 |
| HK1095393A1 (zh) | 2007-05-04 |
| HK1114945A1 (zh) | 2008-11-14 |
| ATE438953T1 (de) | 2009-08-15 |
| JP4836796B2 (ja) | 2011-12-14 |
| WO2005040952A2 (en) | 2005-05-06 |
| DE602004012305D1 (de) | 2008-04-17 |
| US20050077551A1 (en) | 2005-04-14 |
| US7227203B2 (en) | 2007-06-05 |
| JP2012023953A (ja) | 2012-02-02 |
| US7826238B2 (en) | 2010-11-02 |
| EP1843470B1 (en) | 2009-08-05 |
| KR20110039579A (ko) | 2011-04-19 |
| US20070190700A1 (en) | 2007-08-16 |
| DE602004022470D1 (de) | 2009-09-17 |
| CN1864115A (zh) | 2006-11-15 |
| ATE388433T1 (de) | 2008-03-15 |
| CN101106130B (zh) | 2010-06-02 |
| US20050225362A1 (en) | 2005-10-13 |
| EP1673671A2 (en) | 2006-06-28 |
| JP2007509493A (ja) | 2007-04-12 |
| EP1843470A1 (en) | 2007-10-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |