JP5602111B2 - 電源制御システム抑止方法 - Google Patents
電源制御システム抑止方法 Download PDFInfo
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- JP5602111B2 JP5602111B2 JP2011179260A JP2011179260A JP5602111B2 JP 5602111 B2 JP5602111 B2 JP 5602111B2 JP 2011179260 A JP2011179260 A JP 2011179260A JP 2011179260 A JP2011179260 A JP 2011179260A JP 5602111 B2 JP5602111 B2 JP 5602111B2
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- 238000000034 method Methods 0.000 title claims description 9
- 230000001629 suppression Effects 0.000 title description 2
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 description 18
- 239000000758 substrate Substances 0.000 description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 108091006146 Channels Proteins 0.000 description 4
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 3
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 210000000746 body region Anatomy 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 238000013475 authorization Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/0285—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements bias arrangements for gate electrode of field effect transistors, e.g. RC networks, voltage partitioning circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dc-Dc Converters (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Emergency Protection Circuit Devices (AREA)
- Bipolar Integrated Circuits (AREA)
- Amplifiers (AREA)
- Direct Current Feeding And Distribution (AREA)
- Revetment (AREA)
- Steering Control In Accordance With Driving Conditions (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
- Lock And Its Accessories (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
12 高電圧マルチ出力電流装置
25 電源制御装置システム
34 スタートアップ制御回路
35 抑止トランジスタ
39 動作電圧検出器
40 初期電圧検出器
50 システム・コントローラ
56 電圧参照
Claims (2)
- システム・コントローラが出力電圧の第1値に応答して前記システム・コントローラの出力に第1出力電流を生成するために形成する段階と、
前記システム・コントローラが前記出力電圧の第2値に応答して前記システム・コントローラの前記出力で第2出力電流を生成するために形成する段階であって、前記第2出力電流は前記第1出力電流よりも大きく、前記出力電圧が前記第1値より大きい場合前記第1出力電流および前記第2出力電流の両方を生成する段階、および、前記出力電圧が第3値と少なくとも等しい場合前記第1出力電流および前記第2出力電流の生成をディセーブルする段階を含む、段階と、
前記第2出力電流の生成を抑止するために前記第2値より大きくない電圧に前記出力を結合することに応答して前記システム・コントローラが前記第2出力電流の生成を抑止するために形成する段階であって、前記第2値は前記第1値より大きい値であり、かつ第3値は前記第1値および前記第2値の両方より大きい、段階と、
から構成されることを特徴とする電源制御システム抑止方法。 - 前記システム・コントローラが前記システム・コントローラの入力で入力電圧を受け取り、前記第1出力電流を生成し、前記第1出力電流で前記出力に結合されたキャパシタを充電し、前記出力電圧が前記第3値であるときに前記第1出力電流をディセーブルにするために形成する段階をさらに含むことを特徴とする請求項1記載の電源制御システム抑止方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/685,091 US6943069B2 (en) | 2003-10-14 | 2003-10-14 | Power system inhibit method and device and structure therefor |
US10/685,091 | 2003-10-14 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006535492A Division JP4836796B2 (ja) | 2003-10-14 | 2004-09-10 | 電源システム抑止方法ならびにその装置および構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012023953A JP2012023953A (ja) | 2012-02-02 |
JP5602111B2 true JP5602111B2 (ja) | 2014-10-08 |
Family
ID=34423095
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006535492A Expired - Lifetime JP4836796B2 (ja) | 2003-10-14 | 2004-09-10 | 電源システム抑止方法ならびにその装置および構造 |
JP2011179260A Expired - Lifetime JP5602111B2 (ja) | 2003-10-14 | 2011-08-18 | 電源制御システム抑止方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006535492A Expired - Lifetime JP4836796B2 (ja) | 2003-10-14 | 2004-09-10 | 電源システム抑止方法ならびにその装置および構造 |
Country Status (10)
Country | Link |
---|---|
US (3) | US6943069B2 (ja) |
EP (2) | EP1843470B1 (ja) |
JP (2) | JP4836796B2 (ja) |
KR (1) | KR101137242B1 (ja) |
CN (2) | CN101106130B (ja) |
AT (2) | ATE388433T1 (ja) |
DE (2) | DE602004022470D1 (ja) |
HK (2) | HK1095393A1 (ja) |
TW (1) | TWI339324B (ja) |
WO (1) | WO2005040952A2 (ja) |
Families Citing this family (26)
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US20060086974A1 (en) * | 2004-10-26 | 2006-04-27 | Power Integrations, Inc. | Integrated circuit with multi-length power transistor segments |
US7135748B2 (en) * | 2004-10-26 | 2006-11-14 | Power Integrations, Inc. | Integrated circuit with multi-length output transistor segment |
US7955943B2 (en) * | 2005-01-25 | 2011-06-07 | Semiconductor Components Industries, Llc | High voltage sensor device and method therefor |
US7306999B2 (en) * | 2005-01-25 | 2007-12-11 | Semiconductor Components Industries, L.L.C. | High voltage sensor device and method therefor |
US7477532B2 (en) * | 2005-08-18 | 2009-01-13 | Semiconductor Components Industries, L.L.C. | Method of forming a start-up device and structure therefor |
CN100495881C (zh) * | 2005-12-21 | 2009-06-03 | 昂宝电子(上海)有限公司 | 用于驱动双极晶体管的系统和用于控制电源变换器的系统 |
JP5343306B2 (ja) * | 2006-03-24 | 2013-11-13 | 富士電機株式会社 | スイッチング電源用icおよびスイッチング電源 |
JP5564749B2 (ja) * | 2006-11-20 | 2014-08-06 | 富士電機株式会社 | 半導体装置、半導体集積回路、スイッチング電源用制御icおよびスイッチング電源装置 |
US7564704B2 (en) * | 2006-12-05 | 2009-07-21 | Semiconductor Components Industries, L.L.C. | Method of forming a power supply controller and structure therefor |
KR20080111333A (ko) * | 2007-06-18 | 2008-12-23 | 삼성전기주식회사 | 전압 검출 소자 및 이를 이용한 ad 컨버터 |
JP2009147001A (ja) * | 2007-12-12 | 2009-07-02 | Seiko Instruments Inc | 半導体装置 |
JP5217544B2 (ja) * | 2008-03-19 | 2013-06-19 | 富士電機株式会社 | スイッチング電源制御用半導体装置、起動回路、およびスイッチング電源装置の起動方法 |
US8207580B2 (en) * | 2009-05-29 | 2012-06-26 | Power Integrations, Inc. | Power integrated circuit device with incorporated sense FET |
TWI503956B (zh) | 2009-09-30 | 2015-10-11 | Semiconductor Components Ind | 高電壓感測器設備及其方法 |
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JP5589827B2 (ja) * | 2010-12-24 | 2014-09-17 | サンケン電気株式会社 | 起動回路、スイッチング電源用ic及びスイッチング電源装置 |
JP2012161117A (ja) * | 2011-01-28 | 2012-08-23 | Rohm Co Ltd | Dc/dcコンバータならびにそれを用いた電源装置および電子機器 |
US9048747B2 (en) | 2011-11-23 | 2015-06-02 | Zahid Ansari | Switched-mode power supply startup circuit, method, and system incorporating same |
US20130271102A1 (en) * | 2012-04-12 | 2013-10-17 | Roger Lin | Power supply control structure |
JP6070164B2 (ja) * | 2012-12-21 | 2017-02-01 | サンケン電気株式会社 | スイッチング電源装置 |
US9350342B2 (en) * | 2014-08-29 | 2016-05-24 | Infineon Technologies Austria Ag | System and method for generating an auxiliary voltage |
US10340686B2 (en) | 2014-12-11 | 2019-07-02 | Denso Corporation | Electronic device |
CN106298768B (zh) * | 2015-06-10 | 2019-03-19 | 联华电子股份有限公司 | 半导体元件及半导体元件的操作方法 |
JP6072881B2 (ja) * | 2015-11-04 | 2017-02-01 | ローム株式会社 | Dc/dcコンバータならびにそれを用いた電源装置および電子機器 |
US10910822B2 (en) * | 2018-07-06 | 2021-02-02 | Texas Instruments Incorporated | Control of a power transistor with a drive circuit |
US10679938B2 (en) | 2018-07-31 | 2020-06-09 | Texas Instruments Incorporated | Power transistor coupled to multiple sense transistors |
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-
2003
- 2003-10-14 US US10/685,091 patent/US6943069B2/en not_active Expired - Lifetime
-
2004
- 2004-08-31 TW TW093126276A patent/TWI339324B/zh active
- 2004-09-10 DE DE602004022470T patent/DE602004022470D1/de not_active Expired - Lifetime
- 2004-09-10 CN CN2007101481795A patent/CN101106130B/zh not_active Expired - Lifetime
- 2004-09-10 AT AT04783516T patent/ATE388433T1/de not_active IP Right Cessation
- 2004-09-10 CN CNB2004800289656A patent/CN100458638C/zh not_active Expired - Lifetime
- 2004-09-10 DE DE602004012305T patent/DE602004012305T2/de not_active Expired - Lifetime
- 2004-09-10 EP EP07013802A patent/EP1843470B1/en not_active Expired - Lifetime
- 2004-09-10 WO PCT/US2004/029297 patent/WO2005040952A2/en active Application Filing
- 2004-09-10 KR KR1020117005366A patent/KR101137242B1/ko active IP Right Grant
- 2004-09-10 JP JP2006535492A patent/JP4836796B2/ja not_active Expired - Lifetime
- 2004-09-10 AT AT07013802T patent/ATE438953T1/de not_active IP Right Cessation
- 2004-09-10 EP EP04783516A patent/EP1673671B1/en not_active Expired - Lifetime
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2005
- 2005-06-08 US US11/146,772 patent/US7227203B2/en not_active Expired - Lifetime
-
2007
- 2007-03-07 HK HK07102502.0A patent/HK1095393A1/xx not_active IP Right Cessation
- 2007-04-16 US US11/735,893 patent/US7826238B2/en active Active
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2008
- 2008-05-02 HK HK08104854.9A patent/HK1114945A1/xx not_active IP Right Cessation
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2011
- 2011-08-18 JP JP2011179260A patent/JP5602111B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20070190700A1 (en) | 2007-08-16 |
KR20110039579A (ko) | 2011-04-19 |
CN100458638C (zh) | 2009-02-04 |
US6943069B2 (en) | 2005-09-13 |
DE602004012305T2 (de) | 2009-03-19 |
WO2005040952A3 (en) | 2005-08-04 |
HK1095393A1 (en) | 2007-05-04 |
ATE388433T1 (de) | 2008-03-15 |
EP1673671B1 (en) | 2008-03-05 |
TW200513822A (en) | 2005-04-16 |
US20050225362A1 (en) | 2005-10-13 |
CN101106130B (zh) | 2010-06-02 |
KR101137242B1 (ko) | 2012-04-26 |
CN101106130A (zh) | 2008-01-16 |
US7826238B2 (en) | 2010-11-02 |
DE602004022470D1 (de) | 2009-09-17 |
EP1843470A1 (en) | 2007-10-10 |
US7227203B2 (en) | 2007-06-05 |
DE602004012305D1 (de) | 2008-04-17 |
JP4836796B2 (ja) | 2011-12-14 |
WO2005040952A2 (en) | 2005-05-06 |
EP1843470B1 (en) | 2009-08-05 |
JP2007509493A (ja) | 2007-04-12 |
TWI339324B (en) | 2011-03-21 |
ATE438953T1 (de) | 2009-08-15 |
CN1864115A (zh) | 2006-11-15 |
EP1673671A2 (en) | 2006-06-28 |
US20050077551A1 (en) | 2005-04-14 |
HK1114945A1 (en) | 2008-11-14 |
JP2012023953A (ja) | 2012-02-02 |
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