CN100458638C - 高电压多输出电流装置和形成其的方法 - Google Patents

高电压多输出电流装置和形成其的方法 Download PDF

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Publication number
CN100458638C
CN100458638C CNB2004800289656A CN200480028965A CN100458638C CN 100458638 C CN100458638 C CN 100458638C CN B2004800289656 A CNB2004800289656 A CN B2004800289656A CN 200480028965 A CN200480028965 A CN 200480028965A CN 100458638 C CN100458638 C CN 100458638C
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China
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transistor
periphery
doped region
output
voltage
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Expired - Lifetime
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CNB2004800289656A
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English (en)
Chinese (zh)
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CN1864115A (zh
Inventor
约瑟夫·哈拉米克
杰斐逊·W·哈尔
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Semiconductor Components Industries LLC
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Semiconductor Components Industries LLC
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Revetment (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
  • Lock And Its Accessories (AREA)
CNB2004800289656A 2003-10-14 2004-09-10 高电压多输出电流装置和形成其的方法 Expired - Lifetime CN100458638C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/685,091 US6943069B2 (en) 2003-10-14 2003-10-14 Power system inhibit method and device and structure therefor
US10/685,091 2003-10-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2007101481795A Division CN101106130B (zh) 2003-10-14 2004-09-10 高电压多输出电流装置

Publications (2)

Publication Number Publication Date
CN1864115A CN1864115A (zh) 2006-11-15
CN100458638C true CN100458638C (zh) 2009-02-04

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Family Applications (2)

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CNB2004800289656A Expired - Lifetime CN100458638C (zh) 2003-10-14 2004-09-10 高电压多输出电流装置和形成其的方法
CN2007101481795A Expired - Lifetime CN101106130B (zh) 2003-10-14 2004-09-10 高电压多输出电流装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2007101481795A Expired - Lifetime CN101106130B (zh) 2003-10-14 2004-09-10 高电压多输出电流装置

Country Status (9)

Country Link
US (3) US6943069B2 (enExample)
EP (2) EP1843470B1 (enExample)
JP (2) JP4836796B2 (enExample)
KR (1) KR101137242B1 (enExample)
CN (2) CN100458638C (enExample)
AT (2) ATE438953T1 (enExample)
DE (2) DE602004022470D1 (enExample)
TW (1) TWI339324B (enExample)
WO (1) WO2005040952A2 (enExample)

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US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US7306999B2 (en) * 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
US7477532B2 (en) 2005-08-18 2009-01-13 Semiconductor Components Industries, L.L.C. Method of forming a start-up device and structure therefor
CN100495881C (zh) * 2005-12-21 2009-06-03 昂宝电子（上海）有限公司 用于驱动双极晶体管的系统和用于控制电源变换器的系统
JP5343306B2 (ja) * 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP5564749B2 (ja) * 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US7564704B2 (en) * 2006-12-05 2009-07-21 Semiconductor Components Industries, L.L.C. Method of forming a power supply controller and structure therefor
KR20080111333A (ko) * 2007-06-18 2008-12-23 삼성전기주식회사 전압 검출 소자 및 이를 이용한 ａｄ 컨버터
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置
JP5217544B2 (ja) * 2008-03-19 2013-06-19 富士電機株式会社 スイッチング電源制御用半導体装置、起動回路、およびスイッチング電源装置の起動方法
US8207580B2 (en) * 2009-05-29 2012-06-26 Power Integrations, Inc. Power integrated circuit device with incorporated sense FET
TWI503956B (zh) 2009-09-30 2015-10-11 Semiconductor Components Ind 高電壓感測器設備及其方法
US8411471B2 (en) 2010-06-18 2013-04-02 Infineon Technologies Ag Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor
JP5589827B2 (ja) * 2010-12-24 2014-09-17 サンケン電気株式会社 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置
JP2012161117A (ja) * 2011-01-28 2012-08-23 Rohm Co Ltd Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US9048747B2 (en) 2011-11-23 2015-06-02 Zahid Ansari Switched-mode power supply startup circuit, method, and system incorporating same
US20130271102A1 (en) * 2012-04-12 2013-10-17 Roger Lin Power supply control structure
JP6070164B2 (ja) * 2012-12-21 2017-02-01 サンケン電気株式会社 スイッチング電源装置
US9467061B2 (en) * 2014-08-29 2016-10-11 Infineon Technologies Austria Ag System and method for driving a transistor
US10340686B2 (en) 2014-12-11 2019-07-02 Denso Corporation Electronic device
CN106298768B (zh) * 2015-06-10 2019-03-19 联华电子股份有限公司 半导体元件及半导体元件的操作方法
JP6072881B2 (ja) * 2015-11-04 2017-02-01 ローム株式会社 Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US10910822B2 (en) * 2018-07-06 2021-02-02 Texas Instruments Incorporated Control of a power transistor with a drive circuit
US10679938B2 (en) * 2018-07-31 2020-06-09 Texas Instruments Incorporated Power transistor coupled to multiple sense transistors

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EP0585788A1 (en) * 1992-09-01 1994-03-09 Power Integrations, Inc. Switched mode power supply integrated circuit with start-up self-biasing
US5477175A (en) * 1993-10-25 1995-12-19 Motorola Off-line bootstrap startup circuit
CN1139836A (zh) * 1995-06-06 1997-01-08 约克国际公司 开关驱动电路
US20030117825A1 (en) * 2000-05-03 2003-06-26 Chorng-Wei Liaw Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup

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US5477175A (en) * 1993-10-25 1995-12-19 Motorola Off-line bootstrap startup circuit
CN1139836A (zh) * 1995-06-06 1997-01-08 约克国际公司 开关驱动电路
US20030117825A1 (en) * 2000-05-03 2003-06-26 Chorng-Wei Liaw Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup

Also Published As

Publication number Publication date
JP5602111B2 (ja) 2014-10-08
WO2005040952A3 (en) 2005-08-04
CN101106130A (zh) 2008-01-16
TW200513822A (en) 2005-04-16
EP1673671B1 (en) 2008-03-05
US6943069B2 (en) 2005-09-13
KR101137242B1 (ko) 2012-04-26
DE602004012305T2 (de) 2009-03-19
HK1095393A1 (zh) 2007-05-04
HK1114945A1 (zh) 2008-11-14
ATE438953T1 (de) 2009-08-15
JP4836796B2 (ja) 2011-12-14
WO2005040952A2 (en) 2005-05-06
DE602004012305D1 (de) 2008-04-17
US20050077551A1 (en) 2005-04-14
US7227203B2 (en) 2007-06-05
JP2012023953A (ja) 2012-02-02
US7826238B2 (en) 2010-11-02
EP1843470B1 (en) 2009-08-05
KR20110039579A (ko) 2011-04-19
US20070190700A1 (en) 2007-08-16
DE602004022470D1 (de) 2009-09-17
CN1864115A (zh) 2006-11-15
ATE388433T1 (de) 2008-03-15
CN101106130B (zh) 2010-06-02
US20050225362A1 (en) 2005-10-13
EP1673671A2 (en) 2006-06-28
JP2007509493A (ja) 2007-04-12
EP1843470A1 (en) 2007-10-10
TWI339324B (en) 2011-03-21

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