ATE388433T1 - Leistungssystem-sperrverfahren und -einrichtung und struktur dafür - Google Patents

Leistungssystem-sperrverfahren und -einrichtung und struktur dafür

Info

Publication number
ATE388433T1
ATE388433T1 AT04783516T AT04783516T ATE388433T1 AT E388433 T1 ATE388433 T1 AT E388433T1 AT 04783516 T AT04783516 T AT 04783516T AT 04783516 T AT04783516 T AT 04783516T AT E388433 T1 ATE388433 T1 AT E388433T1
Authority
AT
Austria
Prior art keywords
currents
control system
power system
power control
system lockout
Prior art date
Application number
AT04783516T
Other languages
German (de)
English (en)
Inventor
Josef Halamik
Jefferson Hall
Original Assignee
Semiconductor Components Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Components Ind filed Critical Semiconductor Components Ind
Application granted granted Critical
Publication of ATE388433T1 publication Critical patent/ATE388433T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Amplifiers (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Revetment (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
  • Lock And Its Accessories (AREA)
AT04783516T 2003-10-14 2004-09-10 Leistungssystem-sperrverfahren und -einrichtung und struktur dafür ATE388433T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/685,091 US6943069B2 (en) 2003-10-14 2003-10-14 Power system inhibit method and device and structure therefor

Publications (1)

Publication Number Publication Date
ATE388433T1 true ATE388433T1 (de) 2008-03-15

Family

ID=34423095

Family Applications (2)

Application Number Title Priority Date Filing Date
AT04783516T ATE388433T1 (de) 2003-10-14 2004-09-10 Leistungssystem-sperrverfahren und -einrichtung und struktur dafür
AT07013802T ATE438953T1 (de) 2003-10-14 2004-09-10 Leistungssystem-sperrverfahren und -einrichtung und struktur dafür

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT07013802T ATE438953T1 (de) 2003-10-14 2004-09-10 Leistungssystem-sperrverfahren und -einrichtung und struktur dafür

Country Status (9)

Country Link
US (3) US6943069B2 (enExample)
EP (2) EP1843470B1 (enExample)
JP (2) JP4836796B2 (enExample)
KR (1) KR101137242B1 (enExample)
CN (2) CN101106130B (enExample)
AT (2) ATE388433T1 (enExample)
DE (2) DE602004012305T2 (enExample)
TW (1) TWI339324B (enExample)
WO (1) WO2005040952A2 (enExample)

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US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
US7306999B2 (en) * 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7477532B2 (en) * 2005-08-18 2009-01-13 Semiconductor Components Industries, L.L.C. Method of forming a start-up device and structure therefor
CN100495881C (zh) * 2005-12-21 2009-06-03 昂宝电子（上海）有限公司 用于驱动双极晶体管的系统和用于控制电源变换器的系统
JP5343306B2 (ja) 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP5564749B2 (ja) * 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US7564704B2 (en) * 2006-12-05 2009-07-21 Semiconductor Components Industries, L.L.C. Method of forming a power supply controller and structure therefor
KR20080111333A (ko) * 2007-06-18 2008-12-23 삼성전기주식회사 전압 검출 소자 및 이를 이용한 ａｄ 컨버터
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置
JP5217544B2 (ja) * 2008-03-19 2013-06-19 富士電機株式会社 スイッチング電源制御用半導体装置、起動回路、およびスイッチング電源装置の起動方法
US8207580B2 (en) * 2009-05-29 2012-06-26 Power Integrations, Inc. Power integrated circuit device with incorporated sense FET
TWI503956B (zh) 2009-09-30 2015-10-11 Semiconductor Components Ind 高電壓感測器設備及其方法
US8411471B2 (en) 2010-06-18 2013-04-02 Infineon Technologies Ag Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor
JP5589827B2 (ja) 2010-12-24 2014-09-17 サンケン電気株式会社 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置
JP2012161117A (ja) * 2011-01-28 2012-08-23 Rohm Co Ltd Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US9048747B2 (en) 2011-11-23 2015-06-02 Zahid Ansari Switched-mode power supply startup circuit, method, and system incorporating same
US20130271102A1 (en) * 2012-04-12 2013-10-17 Roger Lin Power supply control structure
JP6070164B2 (ja) * 2012-12-21 2017-02-01 サンケン電気株式会社 スイッチング電源装置
US9467061B2 (en) * 2014-08-29 2016-10-11 Infineon Technologies Austria Ag System and method for driving a transistor
US10340686B2 (en) 2014-12-11 2019-07-02 Denso Corporation Electronic device
CN106298768B (zh) * 2015-06-10 2019-03-19 联华电子股份有限公司 半导体元件及半导体元件的操作方法
JP6072881B2 (ja) * 2015-11-04 2017-02-01 ローム株式会社 Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US10910822B2 (en) * 2018-07-06 2021-02-02 Texas Instruments Incorporated Control of a power transistor with a drive circuit
US10679938B2 (en) * 2018-07-31 2020-06-09 Texas Instruments Incorporated Power transistor coupled to multiple sense transistors

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US4370701A (en) * 1981-04-24 1983-01-25 Rockwell International Corporation Energy conserving drive circuit for switched mode converter utilizing current snubber apparatus
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JPS6281054A (ja) * 1985-10-04 1987-04-14 Nec Corp 半導体装置
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US5477175A (en) * 1993-10-25 1995-12-19 Motorola Off-line bootstrap startup circuit
JPH07123709A (ja) * 1993-10-28 1995-05-12 Matsushita Electric Ind Co Ltd 電源装置
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US6127700A (en) * 1995-09-12 2000-10-03 National Semiconductor Corporation Field-effect transistor having local threshold-adjust doping
TW432276B (en) * 1997-03-08 2001-05-01 Acer Peripherals Inc Power-saving type power-supply with the capability of quickly restoring the start
JPH10309078A (ja) * 1997-04-30 1998-11-17 Canon Inc スイッチング型直流電源装置
US5892389A (en) * 1997-06-03 1999-04-06 Motorola, Inc. Method and circuit for current limiting of DC-DC regulators
DE19918028A1 (de) * 1999-04-21 2000-11-02 Siemens Ag Halbleiter-Bauelement
US6204655B1 (en) * 1999-11-01 2001-03-20 Maxim Integrated Products, Inc. Voltage-controlled current source with variable supply current
JP3664061B2 (ja) * 1999-12-28 2005-06-22 日産自動車株式会社 電流制御型半導体素子用駆動回路
US6259618B1 (en) * 2000-05-03 2001-07-10 Analog And Power Electronics Corp. Power chip set for a switching mode power supply having a device for providing a drive signal to a control unit upon startup
JP3645165B2 (ja) * 2000-10-02 2005-05-11 オリンパス株式会社 給電制御装置
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Also Published As

Publication number Publication date
CN100458638C (zh) 2009-02-04
HK1114945A1 (zh) 2008-11-14
TW200513822A (en) 2005-04-16
CN1864115A (zh) 2006-11-15
EP1843470A1 (en) 2007-10-10
EP1673671A2 (en) 2006-06-28
HK1095393A1 (zh) 2007-05-04
JP5602111B2 (ja) 2014-10-08
US20050225362A1 (en) 2005-10-13
EP1843470B1 (en) 2009-08-05
WO2005040952A3 (en) 2005-08-04
DE602004012305T2 (de) 2009-03-19
EP1673671B1 (en) 2008-03-05
DE602004022470D1 (de) 2009-09-17
ATE438953T1 (de) 2009-08-15
JP2007509493A (ja) 2007-04-12
CN101106130B (zh) 2010-06-02
TWI339324B (en) 2011-03-21
JP4836796B2 (ja) 2011-12-14
WO2005040952A2 (en) 2005-05-06
CN101106130A (zh) 2008-01-16
US20070190700A1 (en) 2007-08-16
US6943069B2 (en) 2005-09-13
KR101137242B1 (ko) 2012-04-26
US7227203B2 (en) 2007-06-05
JP2012023953A (ja) 2012-02-02
US7826238B2 (en) 2010-11-02
US20050077551A1 (en) 2005-04-14
KR20110039579A (ko) 2011-04-19
DE602004012305D1 (de) 2008-04-17

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