JP4834992B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4834992B2
JP4834992B2 JP2004373277A JP2004373277A JP4834992B2 JP 4834992 B2 JP4834992 B2 JP 4834992B2 JP 2004373277 A JP2004373277 A JP 2004373277A JP 2004373277 A JP2004373277 A JP 2004373277A JP 4834992 B2 JP4834992 B2 JP 4834992B2
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Japan
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fine particles
organic semiconductor
conductive path
substrate
forming
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Japanese (ja)
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JP2005210107A5 (enExample
JP2005210107A (ja
Inventor
裕輝 石岡
大介 保原
眞一郎 近藤
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Sony Corp
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Sony Corp
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Publication of JP2005210107A5 publication Critical patent/JP2005210107A5/ja
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  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2004373277A 2003-12-26 2004-12-24 半導体装置の製造方法 Expired - Fee Related JP4834992B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004373277A JP4834992B2 (ja) 2003-12-26 2004-12-24 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003434349 2003-12-26
JP2003434349 2003-12-26
JP2004373277A JP4834992B2 (ja) 2003-12-26 2004-12-24 半導体装置の製造方法

Publications (3)

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JP2005210107A JP2005210107A (ja) 2005-08-04
JP2005210107A5 JP2005210107A5 (enExample) 2007-09-27
JP4834992B2 true JP4834992B2 (ja) 2011-12-14

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JP2004373277A Expired - Fee Related JP4834992B2 (ja) 2003-12-26 2004-12-24 半導体装置の製造方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7687372B2 (en) * 2005-04-08 2010-03-30 Versatilis Llc System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor
KR101223718B1 (ko) * 2005-06-18 2013-01-18 삼성디스플레이 주식회사 나노 도전성 막의 패터닝 방법
JP4940618B2 (ja) * 2005-10-07 2012-05-30 ソニー株式会社 半導体装置
JP2007273949A (ja) * 2006-03-30 2007-10-18 Korea Univ Industrial & Academic Collaboration Foundation ナノ粒子を用いたトップゲート型薄膜トランジスタおよびその製造方法
JP4957735B2 (ja) * 2006-05-18 2012-06-20 ソニー株式会社 有機電子デバイス及びその製造方法、並びに、有機半導体分子
JP4967503B2 (ja) * 2006-07-28 2012-07-04 ソニー株式会社 有機薄膜トランジスタ、有機薄膜トランジスタの形成方法
JP2008155357A (ja) * 2006-11-28 2008-07-10 Institute Of Physical & Chemical Research 構造体およびその製造方法
JP6004092B2 (ja) * 2013-04-18 2016-10-05 富士電機株式会社 積層体および積層体の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003264326A (ja) * 2002-03-08 2003-09-19 Japan Science & Technology Corp 分子集積回路素子及びその製造方法
JP4736324B2 (ja) * 2002-04-22 2011-07-27 コニカミノルタホールディングス株式会社 半導体素子及びその製造方法

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JP2005210107A (ja) 2005-08-04

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