JP2005210107A5 - - Google Patents
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- Publication number
- JP2005210107A5 JP2005210107A5 JP2004373277A JP2004373277A JP2005210107A5 JP 2005210107 A5 JP2005210107 A5 JP 2005210107A5 JP 2004373277 A JP2004373277 A JP 2004373277A JP 2004373277 A JP2004373277 A JP 2004373277A JP 2005210107 A5 JP2005210107 A5 JP 2005210107A5
- Authority
- JP
- Japan
- Prior art keywords
- fine particles
- semiconductor device
- forming
- substrate
- organic semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 61
- 239000010419 fine particle Substances 0.000 claims 44
- 239000000758 substrate Substances 0.000 claims 20
- 230000015572 biosynthetic process Effects 0.000 claims 16
- 239000010410 layer Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 13
- 239000004020 conductor Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims 4
- 125000004093 cyano group Chemical group *C#N 0.000 claims 4
- 125000000524 functional group Chemical group 0.000 claims 4
- 239000002245 particle Substances 0.000 claims 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- 239000000956 alloy Substances 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 2
- 229910052737 gold Inorganic materials 0.000 claims 2
- 239000010931 gold Substances 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- 125000002462 isocyano group Chemical group *[N+]#[C-] 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 2
- 239000010445 mica Substances 0.000 claims 2
- 229910052618 mica group Inorganic materials 0.000 claims 2
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229920000620 organic polymer Polymers 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 229910052763 palladium Inorganic materials 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 238000001704 evaporation Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004373277A JP4834992B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003434349 | 2003-12-26 | ||
| JP2003434349 | 2003-12-26 | ||
| JP2004373277A JP4834992B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005210107A JP2005210107A (ja) | 2005-08-04 |
| JP2005210107A5 true JP2005210107A5 (enExample) | 2007-09-27 |
| JP4834992B2 JP4834992B2 (ja) | 2011-12-14 |
Family
ID=34914326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004373277A Expired - Fee Related JP4834992B2 (ja) | 2003-12-26 | 2004-12-24 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4834992B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7687372B2 (en) * | 2005-04-08 | 2010-03-30 | Versatilis Llc | System and method for manufacturing thick and thin film devices using a donee layer cleaved from a crystalline donor |
| KR101223718B1 (ko) * | 2005-06-18 | 2013-01-18 | 삼성디스플레이 주식회사 | 나노 도전성 막의 패터닝 방법 |
| JP4940618B2 (ja) * | 2005-10-07 | 2012-05-30 | ソニー株式会社 | 半導体装置 |
| JP2007273949A (ja) * | 2006-03-30 | 2007-10-18 | Korea Univ Industrial & Academic Collaboration Foundation | ナノ粒子を用いたトップゲート型薄膜トランジスタおよびその製造方法 |
| JP4957735B2 (ja) * | 2006-05-18 | 2012-06-20 | ソニー株式会社 | 有機電子デバイス及びその製造方法、並びに、有機半導体分子 |
| JP4967503B2 (ja) * | 2006-07-28 | 2012-07-04 | ソニー株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの形成方法 |
| JP2008155357A (ja) * | 2006-11-28 | 2008-07-10 | Institute Of Physical & Chemical Research | 構造体およびその製造方法 |
| WO2014171320A1 (ja) * | 2013-04-18 | 2014-10-23 | 富士電機株式会社 | 積層体および積層体の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003264326A (ja) * | 2002-03-08 | 2003-09-19 | Japan Science & Technology Corp | 分子集積回路素子及びその製造方法 |
| WO2003089515A1 (en) * | 2002-04-22 | 2003-10-30 | Konica Minolta Holdings, Inc. | Organic semiconductor composition, organic semiconductor element, and process for producing the same |
-
2004
- 2004-12-24 JP JP2004373277A patent/JP4834992B2/ja not_active Expired - Fee Related
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