JP4832442B2 - 電気素子およびメモリ装置 - Google Patents

電気素子およびメモリ装置 Download PDF

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Publication number
JP4832442B2
JP4832442B2 JP2007531119A JP2007531119A JP4832442B2 JP 4832442 B2 JP4832442 B2 JP 4832442B2 JP 2007531119 A JP2007531119 A JP 2007531119A JP 2007531119 A JP2007531119 A JP 2007531119A JP 4832442 B2 JP4832442 B2 JP 4832442B2
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JP
Japan
Prior art keywords
electric element
electrode
bit
memory device
thin film
Prior art date
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Expired - Fee Related
Application number
JP2007531119A
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English (en)
Japanese (ja)
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JPWO2007086325A1 (ja
Inventor
覚 三谷
浩一 小佐野
俊作 村岡
久美男 名古
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2007531119A priority Critical patent/JP4832442B2/ja
Publication of JPWO2007086325A1 publication Critical patent/JPWO2007086325A1/ja
Application granted granted Critical
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/34—Material includes an oxide or a nitride
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2007531119A 2006-01-24 2007-01-19 電気素子およびメモリ装置 Expired - Fee Related JP4832442B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007531119A JP4832442B2 (ja) 2006-01-24 2007-01-19 電気素子およびメモリ装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006014940 2006-01-24
JP2006014940 2006-01-24
JP2007531119A JP4832442B2 (ja) 2006-01-24 2007-01-19 電気素子およびメモリ装置
PCT/JP2007/050809 WO2007086325A1 (ja) 2006-01-24 2007-01-19 電気素子，メモリ装置，および半導体集積回路

Publications (2)

Publication Number Publication Date
JPWO2007086325A1 JPWO2007086325A1 (ja) 2009-06-18
JP4832442B2 true JP4832442B2 (ja) 2011-12-07

Family

ID=38309120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007531119A Expired - Fee Related JP4832442B2 (ja) 2006-01-24 2007-01-19 電気素子およびメモリ装置

Country Status (5)

Country Link
US (1) US7855910B2 (zh)
JP (1) JP4832442B2 (zh)
CN (1) CN101351888B (zh)
TW (1) TW200737497A (zh)
WO (1) WO2007086325A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7964869B2 (en) 2006-08-25 2011-06-21 Panasonic Corporation Memory element, memory apparatus, and semiconductor integrated circuit
US7859916B2 (en) * 2007-12-18 2010-12-28 Micron Technology, Inc. Symmetrically operating single-ended input buffer devices and methods
KR20090095313A (ko) * 2008-03-05 2009-09-09 삼성전자주식회사 저항성 메모리 소자의 프로그래밍 방법
US8432759B2 (en) * 2009-06-30 2013-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Measuring electrical resistance
US8278139B2 (en) * 2009-09-25 2012-10-02 Applied Materials, Inc. Passivating glue layer to improve amorphous carbon to metal adhesion
CN103199195A (zh) * 2013-04-25 2013-07-10 河北大学 一种双极阻变存储器件及其制备方法
CN103367637A (zh) * 2013-07-16 2013-10-23 河北师范大学 一种可同时调控介质层电性与磁性的多维度存储器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002111094A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Ind Co Ltd 磁気抵抗素子およびそれを用いた磁気センサ、メモリー装置
JP2004273656A (ja) * 2003-03-07 2004-09-30 Taiyo Yuden Co Ltd Ｅｐｉｒ素子及びそれを利用した半導体装置
JP2005191312A (ja) * 2003-12-25 2005-07-14 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、磁気再生装置および磁気メモリ
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6204139B1 (en) * 1998-08-25 2001-03-20 University Of Houston Method for switching the properties of perovskite materials used in thin film resistors
US6531371B2 (en) * 2001-06-28 2003-03-11 Sharp Laboratories Of America, Inc. Electrically programmable resistance cross point memory
US6759249B2 (en) * 2002-02-07 2004-07-06 Sharp Laboratories Of America, Inc. Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
JP4613478B2 (ja) 2003-05-15 2011-01-19 ソニー株式会社 半導体記憶素子及びこれを用いた半導体記憶装置
JP5049483B2 (ja) * 2005-04-22 2012-10-17 パナソニック株式会社 電気素子，メモリ装置，および半導体集積回路
WO2006114904A1 (en) * 2005-04-22 2006-11-02 Matsushita Electric Industrial Co., Ltd. Non volatile memory cell and semiconductor memory device
CN100409379C (zh) * 2006-01-16 2008-08-06 南开大学 晶粒大小可控的多晶Fe3O4薄膜材料及其制备方法
CN100401433C (zh) * 2006-01-16 2008-07-09 南开大学 多晶Fe3O4薄膜材料的制备方法及其应用
US7459716B2 (en) * 2007-06-11 2008-12-02 Kabushiki Kaisha Toshiba Resistance change memory device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002111094A (ja) * 2000-09-26 2002-04-12 Matsushita Electric Ind Co Ltd 磁気抵抗素子およびそれを用いた磁気センサ、メモリー装置
JP2004273656A (ja) * 2003-03-07 2004-09-30 Taiyo Yuden Co Ltd Ｅｐｉｒ素子及びそれを利用した半導体装置
JP2005191312A (ja) * 2003-12-25 2005-07-14 Toshiba Corp 磁気抵抗効果素子、磁気ヘッド、磁気再生装置および磁気メモリ
WO2005101420A1 (en) * 2004-04-16 2005-10-27 Matsushita Electric Industrial Co. Ltd. Thin film memory device having a variable resistance

Also Published As

Publication number Publication date
TW200737497A (en) 2007-10-01
WO2007086325A1 (ja) 2007-08-02
CN101351888A (zh) 2009-01-21
CN101351888B (zh) 2010-08-18
JPWO2007086325A1 (ja) 2009-06-18
US7855910B2 (en) 2010-12-21
US20100002490A1 (en) 2010-01-07

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