JP4831954B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4831954B2
JP4831954B2 JP2004324614A JP2004324614A JP4831954B2 JP 4831954 B2 JP4831954 B2 JP 4831954B2 JP 2004324614 A JP2004324614 A JP 2004324614A JP 2004324614 A JP2004324614 A JP 2004324614A JP 4831954 B2 JP4831954 B2 JP 4831954B2
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JP
Japan
Prior art keywords
film
electrode
semiconductor film
insulating film
mask
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Expired - Fee Related
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JP2004324614A
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English (en)
Japanese (ja)
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JP2005190992A5 (https=
JP2005190992A (ja
Inventor
舜平 山崎
慎志 前川
厳 藤井
秀明 桑原
祐子 舘村
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004324614A priority Critical patent/JP4831954B2/ja
Publication of JP2005190992A publication Critical patent/JP2005190992A/ja
Publication of JP2005190992A5 publication Critical patent/JP2005190992A5/ja
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Publication of JP4831954B2 publication Critical patent/JP4831954B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2004324614A 2003-11-14 2004-11-09 表示装置の作製方法 Expired - Fee Related JP4831954B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004324614A JP4831954B2 (ja) 2003-11-14 2004-11-09 表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003386020 2003-11-14
JP2003386020 2003-11-14
JP2004324614A JP4831954B2 (ja) 2003-11-14 2004-11-09 表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005190992A JP2005190992A (ja) 2005-07-14
JP2005190992A5 JP2005190992A5 (https=) 2007-10-25
JP4831954B2 true JP4831954B2 (ja) 2011-12-07

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JP2004324614A Expired - Fee Related JP4831954B2 (ja) 2003-11-14 2004-11-09 表示装置の作製方法

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JP (1) JP4831954B2 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2432714A (en) * 2005-10-06 2007-05-30 Seiko Epson Corp Thin film transistor and method for fabricating an electronic device
KR100688972B1 (ko) * 2006-06-01 2007-03-08 삼성전자주식회사 표시장치와 이의 제조방법
JP5145687B2 (ja) * 2006-10-25 2013-02-20 ソニー株式会社 デバイスの製造方法
JP4661864B2 (ja) * 2007-12-25 2011-03-30 セイコーエプソン株式会社 膜パターン形成方法及び発光装置の製造方法
KR101636755B1 (ko) 2008-09-19 2016-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP5422972B2 (ja) * 2008-11-18 2014-02-19 コニカミノルタ株式会社 有機薄膜トランジスタアレイの製造方法、及び有機薄膜トランジスタアレイ
WO2011024770A1 (ja) * 2009-08-26 2011-03-03 株式会社アルバック 半導体装置、半導体装置を有する液晶表示装置、半導体装置の製造方法
KR20250030527A (ko) * 2009-09-04 2025-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR102246529B1 (ko) 2009-09-16 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011142064A1 (ja) * 2010-05-11 2011-11-17 シャープ株式会社 アクティブマトリクス基板及び表示パネル
KR102001577B1 (ko) * 2010-12-17 2019-07-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 재료 및 반도체 장치
JP5787038B2 (ja) * 2013-01-07 2015-09-30 富士電機株式会社 透明有機薄膜トランジスタ及びその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3457819B2 (ja) * 1996-11-28 2003-10-20 カシオ計算機株式会社 表示装置
JP4651773B2 (ja) * 1999-04-06 2011-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003058077A (ja) * 2001-08-08 2003-02-28 Fuji Photo Film Co Ltd ミクロファブリケーション用基板、その製造方法および像状薄膜形成方法
JP2003133691A (ja) * 2001-10-22 2003-05-09 Seiko Epson Corp 膜パターンの形成方法、膜パターン形成装置、導電膜配線、電気光学装置、電子機器、並びに非接触型カード媒体
JP4281342B2 (ja) * 2001-12-05 2009-06-17 セイコーエプソン株式会社 パターン形成方法および配線形成方法
JP2003257992A (ja) * 2002-03-06 2003-09-12 Matsushita Electric Ind Co Ltd 薄膜トランジスタの製造方法
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
JP4042099B2 (ja) * 2002-04-22 2008-02-06 セイコーエプソン株式会社 デバイスの製造方法、デバイス及び電子機器
JP4042460B2 (ja) * 2002-04-22 2008-02-06 セイコーエプソン株式会社 製膜方法及びデバイス及び電子機器並びにデバイスの製造方法

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JP2005190992A (ja) 2005-07-14

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