JP4827396B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4827396B2
JP4827396B2 JP2004290571A JP2004290571A JP4827396B2 JP 4827396 B2 JP4827396 B2 JP 4827396B2 JP 2004290571 A JP2004290571 A JP 2004290571A JP 2004290571 A JP2004290571 A JP 2004290571A JP 4827396 B2 JP4827396 B2 JP 4827396B2
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Japan
Prior art keywords
electrode
insulating film
forming
substrate
semiconductor layer
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JP2004290571A
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Japanese (ja)
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JP2005136392A (ja
JP2005136392A5 (https=
Inventor
純矢 丸山
徹 高山
将文 森末
了介 渡邊
栄二 杉山
奨 岡崎
和夫 西
潤 小山
剛 長多
隆徳 松嵜
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004290571A priority Critical patent/JP4827396B2/ja
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Publication of JP2005136392A5 publication Critical patent/JP2005136392A5/ja
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  • Solid State Image Pick-Up Elements (AREA)
  • Studio Devices (AREA)
  • Thin Film Transistor (AREA)
JP2004290571A 2003-10-06 2004-10-01 半導体装置の作製方法 Expired - Fee Related JP4827396B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004290571A JP4827396B2 (ja) 2003-10-06 2004-10-01 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003347646 2003-10-06
JP2003347646 2003-10-06
JP2004290571A JP4827396B2 (ja) 2003-10-06 2004-10-01 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2005136392A JP2005136392A (ja) 2005-05-26
JP2005136392A5 JP2005136392A5 (https=) 2006-03-02
JP4827396B2 true JP4827396B2 (ja) 2011-11-30

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JP2004290571A Expired - Fee Related JP4827396B2 (ja) 2003-10-06 2004-10-01 半導体装置の作製方法

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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101233394B (zh) 2005-07-27 2014-02-26 株式会社半导体能源研究所 半导体装置
JP2007059889A (ja) * 2005-07-27 2007-03-08 Semiconductor Energy Lab Co Ltd 半導体装置
KR101389808B1 (ko) 2005-11-18 2014-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치
KR101315282B1 (ko) * 2006-04-27 2013-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 전자기기
JP5183956B2 (ja) * 2006-04-28 2013-04-17 株式会社半導体エネルギー研究所 半導体装置
DE602007002105D1 (de) 2006-04-28 2009-10-08 Semiconductor Energy Lab Halbleiterbauelement
CN102082189B (zh) 2006-04-28 2012-11-28 株式会社半导体能源研究所 光电转换元件和光电转换元件制造方法
US7791012B2 (en) * 2006-09-29 2010-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising photoelectric conversion element and high-potential and low-potential electrodes
US7759629B2 (en) 2007-03-20 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
KR101423055B1 (ko) * 2007-04-18 2014-07-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 갖는 광전 변환 소자 및 이것을 사용한반도체 장치
EP1986238A3 (en) * 2007-04-27 2010-12-29 Semiconductor Energy Laboratory Co., Ltd. Resin molded optical semiconductor device and corresponding fabrication method
US20110175535A1 (en) * 2008-09-30 2011-07-21 Sharp Kabushiki Kaisha Semiconductor device, method for manufacturing same and display device
JP5487702B2 (ja) * 2009-04-24 2014-05-07 セイコーエプソン株式会社 光電変換装置の製造方法
US8716646B2 (en) 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US9209209B2 (en) 2010-10-29 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
US9048788B2 (en) 2011-05-13 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a photoelectric conversion portion
JP6276496B2 (ja) * 2012-04-27 2018-02-07 エルジー ディスプレイ カンパニー リミテッド 薄膜トランジスタの製造方法、表示装置および有機ｅｌディスプレイの製造方法
JP5737358B2 (ja) * 2013-10-22 2015-06-17 セイコーエプソン株式会社 光電変換装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5648184A (en) * 1979-09-26 1981-05-01 Ricoh Co Ltd Photoreading element
JPH07118526B2 (ja) * 1984-10-30 1995-12-18 セイコーエプソン株式会社 固体撮像装置
JPH0783096B2 (ja) * 1985-12-17 1995-09-06 セイコーエプソン株式会社 固体撮像装置
JPS62144354A (ja) * 1985-12-19 1987-06-27 Seiko Epson Corp 固体撮像装置
JPH07112052B2 (ja) * 1986-03-20 1995-11-29 セイコーエプソン株式会社 光電変換装置の製造方法
JPS62293763A (ja) * 1986-06-13 1987-12-21 Seiko Epson Corp 固体撮像装置
JPS63114164A (ja) * 1986-06-17 1988-05-19 Tokyo Electric Co Ltd 光電変換装置
JPS63190379A (ja) * 1986-09-02 1988-08-05 Seiko Epson Corp カラ−イメ−ジセンサ
JPS63122166A (ja) * 1986-11-11 1988-05-26 Seiko Epson Corp 固体撮像装置
JPS63269569A (ja) * 1987-04-27 1988-11-07 Seiko Epson Corp 固体撮像装置
JPH01289381A (ja) * 1988-05-17 1989-11-21 Seiko Epson Corp 増幅型固体撮像装置
JPH02280373A (ja) * 1989-04-21 1990-11-16 Konica Corp マトリックス駆動型イメージセンサー
JP3410411B2 (ja) * 1991-03-18 2003-05-26 株式会社半導体エネルギー研究所 イメージセンサ及びその作製方法
JPH0629567A (ja) * 1992-07-13 1994-02-04 Nippon Telegr & Teleph Corp <Ntt> 受光回路
JPH06334206A (ja) * 1993-05-19 1994-12-02 Rohm Co Ltd 半導体光電変換装置およびその製造方法
JPH0936340A (ja) * 1995-07-17 1997-02-07 Fuji Xerox Co Ltd 薄膜半導体装置
JP4271268B2 (ja) * 1997-09-20 2009-06-03 株式会社半導体エネルギー研究所 イメージセンサおよびイメージセンサ一体型アクティブマトリクス型表示装置
JP2002303676A (ja) * 2001-04-03 2002-10-18 Matsushita Electric Ind Co Ltd 放射線検出素子および放射線検出素子の製造方法
JP4896302B2 (ja) * 2001-04-09 2012-03-14 株式会社半導体エネルギー研究所 半導体装置
JP2002359364A (ja) * 2001-05-31 2002-12-13 Seiko Epson Corp 光センサー、および光センサーユニット

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