JP4825178B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

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Publication number
JP4825178B2
JP4825178B2 JP2007198826A JP2007198826A JP4825178B2 JP 4825178 B2 JP4825178 B2 JP 4825178B2 JP 2007198826 A JP2007198826 A JP 2007198826A JP 2007198826 A JP2007198826 A JP 2007198826A JP 4825178 B2 JP4825178 B2 JP 4825178B2
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JP
Japan
Prior art keywords
cup
substrate
annular space
exhaust
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007198826A
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English (en)
Japanese (ja)
Other versions
JP2009038083A (ja
Inventor
規宏 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007198826A priority Critical patent/JP4825178B2/ja
Priority to KR1020080061035A priority patent/KR101244591B1/ko
Priority to US12/219,312 priority patent/US8042560B2/en
Priority to TW097128852A priority patent/TW200921771A/zh
Priority to DE102008035802A priority patent/DE102008035802A1/de
Publication of JP2009038083A publication Critical patent/JP2009038083A/ja
Application granted granted Critical
Publication of JP4825178B2 publication Critical patent/JP4825178B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Coating Apparatus (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007198826A 2007-07-31 2007-07-31 基板処理装置 Active JP4825178B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007198826A JP4825178B2 (ja) 2007-07-31 2007-07-31 基板処理装置
KR1020080061035A KR101244591B1 (ko) 2007-07-31 2008-06-26 기판 처리 장치
US12/219,312 US8042560B2 (en) 2007-07-31 2008-07-18 Substrate processing apparatus
TW097128852A TW200921771A (en) 2007-07-31 2008-07-30 Substrate processing apparatus
DE102008035802A DE102008035802A1 (de) 2007-07-31 2008-07-31 Substratbearbeitungsvorrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007198826A JP4825178B2 (ja) 2007-07-31 2007-07-31 基板処理装置

Publications (2)

Publication Number Publication Date
JP2009038083A JP2009038083A (ja) 2009-02-19
JP4825178B2 true JP4825178B2 (ja) 2011-11-30

Family

ID=40176161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007198826A Active JP4825178B2 (ja) 2007-07-31 2007-07-31 基板処理装置

Country Status (5)

Country Link
US (1) US8042560B2 (enExample)
JP (1) JP4825178B2 (enExample)
KR (1) KR101244591B1 (enExample)
DE (1) DE102008035802A1 (enExample)
TW (1) TW200921771A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4920643B2 (ja) * 2008-07-09 2012-04-18 東京エレクトロン株式会社 液処理装置および液処理方法
JP2011054619A (ja) * 2009-08-31 2011-03-17 Hitachi Kokusai Electric Inc 基板処理装置
TWI445065B (zh) * 2009-12-18 2014-07-11 J E T Co Ltd Substrate processing device
JP5726636B2 (ja) * 2011-05-24 2015-06-03 東京エレクトロン株式会社 液処理装置、液処理方法
US9242279B2 (en) 2011-05-24 2016-01-26 Tokyo Electron Limited Liquid processing apparatus and liquid processing method
JP5726637B2 (ja) * 2011-05-24 2015-06-03 東京エレクトロン株式会社 液処理装置、液処理方法
JP6057624B2 (ja) 2012-09-03 2017-01-11 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ カップおよび基板処理装置
KR20150000548A (ko) * 2013-06-24 2015-01-05 삼성전자주식회사 기판 처리 장치
JP6250973B2 (ja) * 2013-08-08 2017-12-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6234736B2 (ja) * 2013-08-30 2017-11-22 芝浦メカトロニクス株式会社 スピン処理装置
JP6229933B2 (ja) 2013-09-27 2017-11-15 株式会社Ｓｃｒｅｅｎホールディングス 処理カップ洗浄方法、基板処理方法および基板処理装置
JP6359925B2 (ja) 2014-09-18 2018-07-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP6308141B2 (ja) * 2015-02-03 2018-04-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
JP7314634B2 (ja) 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法
KR102346529B1 (ko) * 2019-06-24 2021-12-31 세메스 주식회사 액 공급 유닛, 그리고 이를 가지는 기판 처리 장치 및 방법
CN113019827A (zh) * 2021-03-06 2021-06-25 山东阅航环保科技有限公司 一种方便上色的中空玻璃风干装置
JP2024060970A (ja) * 2022-10-20 2024-05-07 東京エレクトロン株式会社 カップ、液処理装置及び液処理方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05146736A (ja) * 1991-11-27 1993-06-15 Sharp Corp スピン式コーテイング装置
KR100284559B1 (ko) 1994-04-04 2001-04-02 다카시마 히로시 처리방법 및 처리장치
JP3102831B2 (ja) 1994-06-20 2000-10-23 大日本スクリーン製造株式会社 回転処理装置
TW406216B (en) * 1995-05-24 2000-09-21 Tokyo Electron Ltd Apparatus for coating resist on substrate
JP2003264167A (ja) 1996-10-07 2003-09-19 Tokyo Electron Ltd 液処理方法及びその装置
TW418452B (en) 1997-10-31 2001-01-11 Tokyo Electron Ltd Coating process
JP2000138163A (ja) 1998-10-30 2000-05-16 Tokyo Electron Ltd 液処理装置
JP3587723B2 (ja) 1999-04-30 2004-11-10 東京エレクトロン株式会社 基板処理装置および基板処理方法
JP4593713B2 (ja) * 2000-02-04 2010-12-08 芝浦メカトロニクス株式会社 スピン処理装置
JP2002368066A (ja) 2001-06-06 2002-12-20 Tokyo Electron Ltd 処理装置
JP3890025B2 (ja) 2003-03-10 2007-03-07 東京エレクトロン株式会社 塗布処理装置及び塗布処理方法
JP3890026B2 (ja) 2003-03-10 2007-03-07 東京エレクトロン株式会社 液処理装置および液処理方法

Also Published As

Publication number Publication date
DE102008035802A1 (de) 2009-02-05
KR20090013024A (ko) 2009-02-04
US20090031948A1 (en) 2009-02-05
TWI374485B (enExample) 2012-10-11
US8042560B2 (en) 2011-10-25
JP2009038083A (ja) 2009-02-19
KR101244591B1 (ko) 2013-03-25
TW200921771A (en) 2009-05-16

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