JP4781673B2 - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

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Publication number
JP4781673B2
JP4781673B2 JP2004379735A JP2004379735A JP4781673B2 JP 4781673 B2 JP4781673 B2 JP 4781673B2 JP 2004379735 A JP2004379735 A JP 2004379735A JP 2004379735 A JP2004379735 A JP 2004379735A JP 4781673 B2 JP4781673 B2 JP 4781673B2
Authority
JP
Japan
Prior art keywords
recess
active region
upper electrode
transistor
dram cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004379735A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006186185A (ja
JP2006186185A5 (enExample
Inventor
英則 佐藤
弘安 能宗
義隆 藤石
宏昭 関川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2004379735A priority Critical patent/JP4781673B2/ja
Priority to US11/311,165 priority patent/US8106437B2/en
Priority to CNA2005101378579A priority patent/CN1819208A/zh
Publication of JP2006186185A publication Critical patent/JP2006186185A/ja
Publication of JP2006186185A5 publication Critical patent/JP2006186185A5/ja
Application granted granted Critical
Publication of JP4781673B2 publication Critical patent/JP4781673B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/045—Manufacture or treatment of capacitors having potential barriers, e.g. varactors
    • H10D1/047—Manufacture or treatment of capacitors having potential barriers, e.g. varactors of conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0387—Making the trench

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
JP2004379735A 2004-12-28 2004-12-28 半導体記憶装置 Expired - Fee Related JP4781673B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004379735A JP4781673B2 (ja) 2004-12-28 2004-12-28 半導体記憶装置
US11/311,165 US8106437B2 (en) 2004-12-28 2005-12-20 Semiconductor storage device
CNA2005101378579A CN1819208A (zh) 2004-12-28 2005-12-28 半导体存储装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004379735A JP4781673B2 (ja) 2004-12-28 2004-12-28 半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2006186185A JP2006186185A (ja) 2006-07-13
JP2006186185A5 JP2006186185A5 (enExample) 2008-01-31
JP4781673B2 true JP4781673B2 (ja) 2011-09-28

Family

ID=36610422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004379735A Expired - Fee Related JP4781673B2 (ja) 2004-12-28 2004-12-28 半導体記憶装置

Country Status (3)

Country Link
US (1) US8106437B2 (enExample)
JP (1) JP4781673B2 (enExample)
CN (1) CN1819208A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008042195A (ja) * 2006-08-02 2008-02-21 Qimonda Ag 書換え可能な不揮発性メモリセル
DE102006036098A1 (de) * 2006-08-02 2008-02-07 Infineon Technologies Ag Wiederprogrammierbare nichtflüchtige Speicherzelle
CN101752381B (zh) * 2008-12-10 2013-07-24 上海华虹Nec电子有限公司 Otp器件结构及其制备方法
TWI418018B (zh) * 2009-11-03 2013-12-01 Taiwan Memory Corp 電子裝置及其製造方法、記憶體裝置
JP5758729B2 (ja) * 2011-07-27 2015-08-05 ローム株式会社 半導体装置
JP2015228418A (ja) * 2014-05-30 2015-12-17 ルネサスエレクトロニクス株式会社 半導体集積回路装置およびその製造方法
US10211347B2 (en) * 2017-06-23 2019-02-19 Qualcomm Incorporated Transcap device architecture with reduced control voltage and improved quality factor
CN115811881B (zh) * 2021-09-13 2025-09-26 长鑫存储技术有限公司 半导体结构的制造方法和半导体结构

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237528A (en) * 1982-11-04 1993-08-17 Hitachi, Ltd. Semiconductor memory
US4939104A (en) * 1984-10-31 1990-07-03 Texas Instruments, Incorporated Method for forming a buried lateral contact
JPS63258060A (ja) * 1987-04-15 1988-10-25 Nec Corp 半導体記憶装置
US4958318A (en) * 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
US6573548B2 (en) * 1998-08-14 2003-06-03 Monolithic System Technology, Inc. DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same
US6468855B2 (en) * 1998-08-14 2002-10-22 Monolithic System Technology, Inc. Reduced topography DRAM cell fabricated using a modified logic process and method for operating same
KR100609194B1 (ko) * 2002-02-14 2006-08-02 마츠시타 덴끼 산교 가부시키가이샤 반도체장치 및 그 제조방법
US6897508B2 (en) * 2002-05-01 2005-05-24 Sundew Technologies, Llc Integrated capacitor with enhanced capacitance density and method of fabricating same
JP4451594B2 (ja) * 2002-12-19 2010-04-14 株式会社ルネサステクノロジ 半導体集積回路装置及びその製造方法
JP2004311853A (ja) * 2003-04-10 2004-11-04 Matsushita Electric Ind Co Ltd 半導体装置とその製造方法
TWI223413B (en) * 2003-11-11 2004-11-01 United Microelectronics Corp SRAM cell structure and manufacturing method thereof
US7019348B2 (en) * 2004-02-26 2006-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Embedded semiconductor product with dual depth isolation regions
JP4476068B2 (ja) * 2004-08-02 2010-06-09 株式会社椿本チエイン ベアリングローラチェーン
JP2006049413A (ja) 2004-08-02 2006-02-16 Fujitsu Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US8106437B2 (en) 2012-01-31
JP2006186185A (ja) 2006-07-13
US20060138512A1 (en) 2006-06-29
CN1819208A (zh) 2006-08-16

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