JP2006186185A5 - - Google Patents
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- Publication number
- JP2006186185A5 JP2006186185A5 JP2004379735A JP2004379735A JP2006186185A5 JP 2006186185 A5 JP2006186185 A5 JP 2006186185A5 JP 2004379735 A JP2004379735 A JP 2004379735A JP 2004379735 A JP2004379735 A JP 2004379735A JP 2006186185 A5 JP2006186185 A5 JP 2006186185A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004379735A JP4781673B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体記憶装置 |
| US11/311,165 US8106437B2 (en) | 2004-12-28 | 2005-12-20 | Semiconductor storage device |
| CNA2005101378579A CN1819208A (zh) | 2004-12-28 | 2005-12-28 | 半导体存储装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004379735A JP4781673B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体記憶装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006186185A JP2006186185A (ja) | 2006-07-13 |
| JP2006186185A5 true JP2006186185A5 (enExample) | 2008-01-31 |
| JP4781673B2 JP4781673B2 (ja) | 2011-09-28 |
Family
ID=36610422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004379735A Expired - Fee Related JP4781673B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体記憶装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8106437B2 (enExample) |
| JP (1) | JP4781673B2 (enExample) |
| CN (1) | CN1819208A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008042195A (ja) * | 2006-08-02 | 2008-02-21 | Qimonda Ag | 書換え可能な不揮発性メモリセル |
| DE102006036098A1 (de) * | 2006-08-02 | 2008-02-07 | Infineon Technologies Ag | Wiederprogrammierbare nichtflüchtige Speicherzelle |
| CN101752381B (zh) * | 2008-12-10 | 2013-07-24 | 上海华虹Nec电子有限公司 | Otp器件结构及其制备方法 |
| TWI418018B (zh) * | 2009-11-03 | 2013-12-01 | Taiwan Memory Corp | 電子裝置及其製造方法、記憶體裝置 |
| JP5758729B2 (ja) * | 2011-07-27 | 2015-08-05 | ローム株式会社 | 半導体装置 |
| JP2015228418A (ja) * | 2014-05-30 | 2015-12-17 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
| US10211347B2 (en) * | 2017-06-23 | 2019-02-19 | Qualcomm Incorporated | Transcap device architecture with reduced control voltage and improved quality factor |
| CN115811881B (zh) * | 2021-09-13 | 2025-09-26 | 长鑫存储技术有限公司 | 半导体结构的制造方法和半导体结构 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5237528A (en) * | 1982-11-04 | 1993-08-17 | Hitachi, Ltd. | Semiconductor memory |
| US4939104A (en) * | 1984-10-31 | 1990-07-03 | Texas Instruments, Incorporated | Method for forming a buried lateral contact |
| JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
| US4958318A (en) * | 1988-07-08 | 1990-09-18 | Eliyahou Harari | Sidewall capacitor DRAM cell |
| US6573548B2 (en) * | 1998-08-14 | 2003-06-03 | Monolithic System Technology, Inc. | DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
| US6468855B2 (en) * | 1998-08-14 | 2002-10-22 | Monolithic System Technology, Inc. | Reduced topography DRAM cell fabricated using a modified logic process and method for operating same |
| KR100609194B1 (ko) * | 2002-02-14 | 2006-08-02 | 마츠시타 덴끼 산교 가부시키가이샤 | 반도체장치 및 그 제조방법 |
| US6897508B2 (en) * | 2002-05-01 | 2005-05-24 | Sundew Technologies, Llc | Integrated capacitor with enhanced capacitance density and method of fabricating same |
| JP4451594B2 (ja) * | 2002-12-19 | 2010-04-14 | 株式会社ルネサステクノロジ | 半導体集積回路装置及びその製造方法 |
| JP2004311853A (ja) * | 2003-04-10 | 2004-11-04 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
| TWI223413B (en) * | 2003-11-11 | 2004-11-01 | United Microelectronics Corp | SRAM cell structure and manufacturing method thereof |
| US7019348B2 (en) * | 2004-02-26 | 2006-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded semiconductor product with dual depth isolation regions |
| JP4476068B2 (ja) * | 2004-08-02 | 2010-06-09 | 株式会社椿本チエイン | ベアリングローラチェーン |
| JP2006049413A (ja) | 2004-08-02 | 2006-02-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2004
- 2004-12-28 JP JP2004379735A patent/JP4781673B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-20 US US11/311,165 patent/US8106437B2/en not_active Expired - Fee Related
- 2005-12-28 CN CNA2005101378579A patent/CN1819208A/zh active Pending