JP4767574B2 - 処理チャンバおよび処理装置 - Google Patents

処理チャンバおよび処理装置 Download PDF

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Publication number
JP4767574B2
JP4767574B2 JP2005103654A JP2005103654A JP4767574B2 JP 4767574 B2 JP4767574 B2 JP 4767574B2 JP 2005103654 A JP2005103654 A JP 2005103654A JP 2005103654 A JP2005103654 A JP 2005103654A JP 4767574 B2 JP4767574 B2 JP 4767574B2
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JP
Japan
Prior art keywords
side walls
processing chamber
processing
reinforcing member
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005103654A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006283096A5 (https=
JP2006283096A (ja
Inventor
健次 天野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005103654A priority Critical patent/JP4767574B2/ja
Priority to TW094134347A priority patent/TWI391724B/zh
Priority to CNB2005101129364A priority patent/CN100405535C/zh
Priority to KR1020060009413A priority patent/KR100722026B1/ko
Publication of JP2006283096A publication Critical patent/JP2006283096A/ja
Publication of JP2006283096A5 publication Critical patent/JP2006283096A5/ja
Application granted granted Critical
Publication of JP4767574B2 publication Critical patent/JP4767574B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices

Landscapes

  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Surface Treatment Of Glass (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Crystal (AREA)
JP2005103654A 2005-03-31 2005-03-31 処理チャンバおよび処理装置 Expired - Fee Related JP4767574B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005103654A JP4767574B2 (ja) 2005-03-31 2005-03-31 処理チャンバおよび処理装置
TW094134347A TWI391724B (zh) 2005-03-31 2005-09-30 Processing chamber and processing device
CNB2005101129364A CN100405535C (zh) 2005-03-31 2005-10-14 处理室和处理装置
KR1020060009413A KR100722026B1 (ko) 2005-03-31 2006-01-31 처리 챔버 및 처리 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005103654A JP4767574B2 (ja) 2005-03-31 2005-03-31 処理チャンバおよび処理装置

Publications (3)

Publication Number Publication Date
JP2006283096A JP2006283096A (ja) 2006-10-19
JP2006283096A5 JP2006283096A5 (https=) 2008-04-24
JP4767574B2 true JP4767574B2 (ja) 2011-09-07

Family

ID=37030593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005103654A Expired - Fee Related JP4767574B2 (ja) 2005-03-31 2005-03-31 処理チャンバおよび処理装置

Country Status (4)

Country Link
JP (1) JP4767574B2 (https=)
KR (1) KR100722026B1 (https=)
CN (1) CN100405535C (https=)
TW (1) TWI391724B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4791110B2 (ja) * 2005-09-02 2011-10-12 東京エレクトロン株式会社 真空チャンバおよび真空処理装置
TWI438829B (zh) * 2007-11-21 2014-05-21 Sfa Engineering Corp 用於化學氣相沈積設備的裝載室
KR100948860B1 (ko) * 2007-11-21 2010-03-22 주식회사 에스에프에이 화학 기상 증착 장치의 로드락 챔버
KR101309363B1 (ko) 2007-12-14 2013-09-17 가부시키가이샤 알박 챔버 및 성막 장치
JP5062057B2 (ja) 2008-06-25 2012-10-31 東京エレクトロン株式会社 真空処理装置
KR20110067939A (ko) * 2009-12-15 2011-06-22 주식회사 테스 로드락 챔버
KR101308389B1 (ko) * 2011-03-14 2013-09-16 엘아이지에이디피 주식회사 기판처리장치의 챔버
JP6230021B2 (ja) * 2014-02-06 2017-11-15 ナビタス株式会社 熱転写装置
KR102914561B1 (ko) * 2021-10-19 2026-01-16 세메스 주식회사 반도체 장비용 수납 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61161378A (ja) * 1985-01-07 1986-07-22 科学技術庁長官官房会計課長 大形ｆｒｐ製デユワ−
JP2743471B2 (ja) * 1989-05-19 1998-04-22 日本電気株式会社 ▲ｉｉｉ▼―ｖ族化合物半導体の気相成長装置
US5121531A (en) * 1990-07-06 1992-06-16 Applied Materials, Inc. Refractory susceptors for epitaxial deposition apparatus
JPH06176895A (ja) * 1992-12-01 1994-06-24 Ishikawajima Harima Heavy Ind Co Ltd 粒子加速器の真空チェンバーおよびその製造方法
JPH0819765A (ja) * 1994-07-07 1996-01-23 Kaijo Corp 超音波洗浄槽
SE9703420D0 (sv) * 1997-09-22 1997-09-22 Formcook Ab Cooking process
US6121581A (en) * 1999-07-09 2000-09-19 Applied Materials, Inc. Semiconductor processing system
JP2001029917A (ja) * 1999-07-22 2001-02-06 Jiro Sasaoka 有機廃物加熱再利用法と装置
JP4540796B2 (ja) * 2000-04-21 2010-09-08 東京エレクトロン株式会社 石英ウインドウ、リフレクタ及び熱処理装置
JP3300330B2 (ja) * 2000-08-28 2002-07-08 東京化工機株式会社 処理室の窓蓋
JP4174557B2 (ja) * 2002-10-17 2008-11-05 ゴールド工業株式会社 ウエハ等精密基板収容容器
JP4084293B2 (ja) * 2002-12-05 2008-04-30 株式会社アドヴァンスド・ディスプレイ・プロセス・エンジニアリング Ｆｐｄ製造装置
KR100564044B1 (ko) 2004-10-06 2006-03-29 주식회사 에이디피엔지니어링 진공처리장치

Also Published As

Publication number Publication date
KR20060106636A (ko) 2006-10-12
KR100722026B1 (ko) 2007-05-25
TW200634369A (en) 2006-10-01
JP2006283096A (ja) 2006-10-19
TWI391724B (zh) 2013-04-01
CN1841648A (zh) 2006-10-04
CN100405535C (zh) 2008-07-23

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