JP4764537B2 - メモリ内のルックアヘッドカラム冗長アクセスを提供するための方法及び装置 - Google Patents

メモリ内のルックアヘッドカラム冗長アクセスを提供するための方法及び装置 Download PDF

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Publication number
JP4764537B2
JP4764537B2 JP2000105026A JP2000105026A JP4764537B2 JP 4764537 B2 JP4764537 B2 JP 4764537B2 JP 2000105026 A JP2000105026 A JP 2000105026A JP 2000105026 A JP2000105026 A JP 2000105026A JP 4764537 B2 JP4764537 B2 JP 4764537B2
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Japan
Prior art keywords
address
redundant
column
memory
decoder
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Expired - Lifetime
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JP2000105026A
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Japanese (ja)
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JP2001035183A5 (enExample
JP2001035183A (ja
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テリー・ティ・ツァイ
ダニエル・エフ・マックローリン
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Thera Consultants LLC
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Thera Consultants LLC
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
    • G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

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  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
JP2000105026A 1999-04-06 2000-04-06 メモリ内のルックアヘッドカラム冗長アクセスを提供するための方法及び装置 Expired - Lifetime JP4764537B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12803999P 1999-04-06 1999-04-06
US60/128039 1999-04-06
US09/357698 1999-07-20
US09/357,698 US6571348B1 (en) 1999-04-06 1999-07-20 Method of and apparatus for providing look ahead column redundancy access within a memory

Publications (3)

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JP2001035183A JP2001035183A (ja) 2001-02-09
JP2001035183A5 JP2001035183A5 (enExample) 2007-05-31
JP4764537B2 true JP4764537B2 (ja) 2011-09-07

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JP2000105026A Expired - Lifetime JP4764537B2 (ja) 1999-04-06 2000-04-06 メモリ内のルックアヘッドカラム冗長アクセスを提供するための方法及び装置

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US (2) US6571348B1 (enExample)
JP (1) JP4764537B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6928377B2 (en) * 2003-09-09 2005-08-09 International Business Machines Corporation Self-test architecture to implement data column redundancy in a RAM
US7035152B1 (en) * 2004-10-14 2006-04-25 Micron Technology, Inc. System and method for redundancy memory decoding
US7296196B2 (en) * 2005-05-17 2007-11-13 Atmel Corporation Redundant column read in a memory array
US7443744B2 (en) * 2006-11-14 2008-10-28 International Business Machines Corporation Method for reducing wiring and required number of redundant elements
CN118866057B (zh) * 2023-04-27 2025-11-21 珠海横琴芯存半导体有限公司 冗余锁存译码电路及存储器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111898A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Storage device
JPH0193000A (ja) * 1987-10-02 1989-04-12 Matsushita Electric Ind Co Ltd 冗長回路付き半導体記憶装置
US4885720A (en) * 1988-04-01 1989-12-05 International Business Machines Corporation Memory device and method implementing wordline redundancy without an access time penalty
JPH02161698A (ja) * 1988-12-13 1990-06-21 Oki Electric Ind Co Ltd 半導体記憶装置の冗長回路
JP2659436B2 (ja) * 1989-08-25 1997-09-30 富士通株式会社 半導体記憶装置
US5153880A (en) * 1990-03-12 1992-10-06 Xicor, Inc. Field-programmable redundancy apparatus for memory arrays
JP2954286B2 (ja) * 1990-06-13 1999-09-27 株式会社日立製作所 半導体記憶装置
JP3281034B2 (ja) * 1992-05-29 2002-05-13 株式会社東芝 半導体記憶装置
US5469401A (en) * 1992-07-14 1995-11-21 Mosaid Technologies Incorporated Column redundancy scheme for DRAM using normal and redundant column decoders programmed with defective array address and defective column address
US5381370A (en) * 1993-08-24 1995-01-10 Cypress Semiconductor Corporation Memory with minimized redundancy access delay
JPH07182882A (ja) * 1993-12-24 1995-07-21 Fujitsu Ltd 不揮発性半導体記憶回路
JPH07235199A (ja) * 1994-02-22 1995-09-05 Hitachi Ltd 半導体記憶装置、及びデータ処理装置
KR0158484B1 (ko) * 1995-01-28 1999-02-01 김광호 불휘발성 반도체 메모리의 행리던던씨
US5625790A (en) * 1995-09-14 1997-04-29 Micron Technology, Inc. Method and apparatus for reducing the access time of a memory device by decoding a row address during a precharge period of the memory device
US5732030A (en) * 1996-06-25 1998-03-24 Texas Instruments Incorporated Method and system for reduced column redundancy using a dual column select
JP2982700B2 (ja) * 1996-08-09 1999-11-29 日本電気株式会社 冗長デコーダ回路
JP3707922B2 (ja) * 1997-11-28 2005-10-19 株式会社日立製作所 半導体記憶装置
JPH11203890A (ja) 1998-01-05 1999-07-30 Mitsubishi Electric Corp 半導体記憶装置
JP3204200B2 (ja) * 1998-02-25 2001-09-04 日本電気株式会社 半導体メモリ装置
US6011734A (en) * 1998-03-12 2000-01-04 Motorola, Inc. Fuseless memory repair system and method of operation
US5889727A (en) 1998-05-11 1999-03-30 Texas Instruments--Acer Incorporated Circuit for reducing the transmission delay of the redundancy evaluation for synchronous DRAM

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US6571348B1 (en) 2003-05-27
USRE41013E1 (en) 2009-11-24
JP2001035183A (ja) 2001-02-09

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