JP4760821B2 - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法 Download PDF

Info

Publication number
JP4760821B2
JP4760821B2 JP2007318155A JP2007318155A JP4760821B2 JP 4760821 B2 JP4760821 B2 JP 4760821B2 JP 2007318155 A JP2007318155 A JP 2007318155A JP 2007318155 A JP2007318155 A JP 2007318155A JP 4760821 B2 JP4760821 B2 JP 4760821B2
Authority
JP
Japan
Prior art keywords
gan
layer
substrate
plane
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007318155A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008078684A (ja
JP2008078684A5 (https=
Inventor
靖利 川口
明彦 石橋
俊哉 横川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2007318155A priority Critical patent/JP4760821B2/ja
Publication of JP2008078684A publication Critical patent/JP2008078684A/ja
Publication of JP2008078684A5 publication Critical patent/JP2008078684A5/ja
Application granted granted Critical
Publication of JP4760821B2 publication Critical patent/JP4760821B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP2007318155A 2007-12-10 2007-12-10 半導体素子の製造方法 Expired - Fee Related JP4760821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007318155A JP4760821B2 (ja) 2007-12-10 2007-12-10 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007318155A JP4760821B2 (ja) 2007-12-10 2007-12-10 半導体素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002331901A Division JP2004165550A (ja) 2002-11-15 2002-11-15 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2008078684A JP2008078684A (ja) 2008-04-03
JP2008078684A5 JP2008078684A5 (https=) 2009-07-30
JP4760821B2 true JP4760821B2 (ja) 2011-08-31

Family

ID=39350350

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007318155A Expired - Fee Related JP4760821B2 (ja) 2007-12-10 2007-12-10 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JP4760821B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9065004B2 (en) 2013-07-08 2015-06-23 Kabushiki Kaisha Toshiba Semiconductor light emitting element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2743981A1 (en) * 2009-10-30 2014-06-18 Imec Method of manufacturing an integrated semiconductor substrate structure
US20250112439A1 (en) * 2022-01-27 2025-04-03 Kyocera Corporation Manufacturing method and manufacturing apparatus for laser element, laser element, and electronic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2828002B2 (ja) * 1995-01-19 1998-11-25 松下電器産業株式会社 半導体発光素子およびその製造方法
JP3651260B2 (ja) * 1997-10-01 2005-05-25 日亜化学工業株式会社 窒化物半導体素子

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9065004B2 (en) 2013-07-08 2015-06-23 Kabushiki Kaisha Toshiba Semiconductor light emitting element

Also Published As

Publication number Publication date
JP2008078684A (ja) 2008-04-03

Similar Documents

Publication Publication Date Title
JP4173445B2 (ja) 窒化物半導体基板、その製造方法、およびそれを用いた半導体発光素子
JP3515974B2 (ja) 窒化物半導体、その製造方法及び窒化物半導体素子
JP4644942B2 (ja) 結晶膜、結晶基板および半導体装置の製造方法
CN112673535A (zh) 表面发射激光器元件及制造表面发射激光器元件的方法
JP3153153B2 (ja) 窒化ガリウム系半導体レーザおよびその製造方法
JP2010177651A (ja) 半導体レーザ素子
WO2002103812A1 (en) Nitride semiconductor, production method therefor and nitride semiconductor element
JP2009158955A (ja) 窒化物半導体レーザダイオード
JP2008198952A (ja) Ｉｉｉ族窒化物半導体発光素子
JP4928874B2 (ja) 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
US6469320B2 (en) Semiconductor light emitting device
JP2008187044A (ja) 半導体レーザ
JP2000332362A (ja) 半導体装置および半導体発光素子
JP2000223417A (ja) 半導体の成長方法、半導体基板の製造方法および半導体装置の製造方法
JP5557180B2 (ja) 半導体発光素子の製造方法
JP2008226865A (ja) 半導体レーザダイオード
JP2009239083A (ja) 半導体発光素子
JP4760821B2 (ja) 半導体素子の製造方法
JP2004165550A (ja) 窒化物半導体素子
JP4608731B2 (ja) 半導体レーザの製造方法
JP4924498B2 (ja) 窒化物系半導体発光素子、エピタキシャルウエハ、及び窒化物系半導体発光素子を作製する方法
JP2009059740A (ja) Ｉｉｉ族窒化物半導体素子およびその製造方法
JP4928811B2 (ja) 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
JP2009239084A (ja) 半導体レーザ素子
JP4623799B2 (ja) 半導体発光素子の製法および半導体レーザ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090615

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20091127

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110523

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4760821

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140617

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees