JP2008078684A5 - - Google Patents

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Publication number
JP2008078684A5
JP2008078684A5 JP2007318155A JP2007318155A JP2008078684A5 JP 2008078684 A5 JP2008078684 A5 JP 2008078684A5 JP 2007318155 A JP2007318155 A JP 2007318155A JP 2007318155 A JP2007318155 A JP 2007318155A JP 2008078684 A5 JP2008078684 A5 JP 2008078684A5
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Japan
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gan
layer
forming
crystal defects
gan layer
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JP2007318155A
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English (en)
Japanese (ja)
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JP2008078684A (ja
JP4760821B2 (ja
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Priority claimed from JP2007318155A external-priority patent/JP4760821B2/ja
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Publication of JP2008078684A5 publication Critical patent/JP2008078684A5/ja
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Publication of JP4760821B2 publication Critical patent/JP4760821B2/ja
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JP2007318155A 2007-12-10 2007-12-10 半導体素子の製造方法 Expired - Fee Related JP4760821B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007318155A JP4760821B2 (ja) 2007-12-10 2007-12-10 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007318155A JP4760821B2 (ja) 2007-12-10 2007-12-10 半導体素子の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002331901A Division JP2004165550A (ja) 2002-11-15 2002-11-15 窒化物半導体素子

Publications (3)

Publication Number Publication Date
JP2008078684A JP2008078684A (ja) 2008-04-03
JP2008078684A5 true JP2008078684A5 (https=) 2009-07-30
JP4760821B2 JP4760821B2 (ja) 2011-08-31

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Family Applications (1)

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JP2007318155A Expired - Fee Related JP4760821B2 (ja) 2007-12-10 2007-12-10 半導体素子の製造方法

Country Status (1)

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JP (1) JP4760821B2 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2743981A1 (en) * 2009-10-30 2014-06-18 Imec Method of manufacturing an integrated semiconductor substrate structure
JP2015018840A (ja) 2013-07-08 2015-01-29 株式会社東芝 半導体発光素子
US20250112439A1 (en) * 2022-01-27 2025-04-03 Kyocera Corporation Manufacturing method and manufacturing apparatus for laser element, laser element, and electronic device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2828002B2 (ja) * 1995-01-19 1998-11-25 松下電器産業株式会社 半導体発光素子およびその製造方法
JP3651260B2 (ja) * 1997-10-01 2005-05-25 日亜化学工業株式会社 窒化物半導体素子

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