JP4717129B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4717129B2 JP4717129B2 JP2009116402A JP2009116402A JP4717129B2 JP 4717129 B2 JP4717129 B2 JP 4717129B2 JP 2009116402 A JP2009116402 A JP 2009116402A JP 2009116402 A JP2009116402 A JP 2009116402A JP 4717129 B2 JP4717129 B2 JP 4717129B2
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Description
第1に、搭載部が設けられ、酸化防止剤膜が形成されているリードフレームを用意し、
前記搭載部に相当する前記リードフレームの裏面を高温にされたボンディング装置の載置台に設け、
前記搭載部に相当する所の前記リードフレームに設けられた半導体素子と前記リードフレームとを、前記ボンディング装置を使ってボンディングする半導体装置の製造方法であり、
前記リードフレームを押さえながらワイヤボンディングする際、前記リードフレームに窒素ガスを吹き付け、前記リードフレームに設けられた前記酸化防止剤膜の剥がれを抑止する事で解決するものである。
前記集合ブロックに相当する前記リードフレームの裏面を高温にされたボンディング装置の載置台に設け、
前記搭載部に相当する所の前記リードフレームに設けられた半導体素子と前記リードフレームとを、前記ボンディング装置を使ってボンディングし、前記集合ブロック内でワイヤボンディングを一括して行う半導体装置の製造方法であり、
前記リードフレームの前記集合ブロックの周端を押さえながら一括してワイヤボンディングする際、前記集合ブロックに窒素ガスを吹き付け、前記リードフレームに設けられた酸化防止剤膜の剥がれを抑止する事で解決するものである。
尚、本発明の回路装置の製造方法では、導電箔上に集合ブロックを形成した場合について説明したが、特に、この場合に限定する必要はなく、リードフレーム等のように導電部材から成る基板に対しも同様な効果を得ることができる。また、回路装置の製造方法に限定することなく、半導体装置の製造方法においても同様な効果を得ることができる。その他、本発明の要旨を逸脱しない範囲で、種々の変更が可能である。
22 載置台
23 カバー
24 作業孔
25 リング照明
27 キャピラリー
29 鏡筒
31 遮蔽蓋
Claims (4)
- 行方向および列方向に配置された複数の搭載部がまとまって集合ブロックとなって形成され、酸化防止剤膜が設けられているリードフレームを用意し、
前記リードフレームをワイヤボンディング装置のヒータ機能を備えた載置台に設けると共に、前記リードフレームの前記集合ブロックの周端を押さえて、前記集合ブロックに相当する前記リードフレームの裏面を、高温にされた前記載置台に当接し、
前記集合ブロック内において、前記ワイヤボンディング装置を使って、前記搭載部に相当する所の前記リードフレームに設けられた半導体素子と前記リードフレームを、一括してワイヤボンディングする半導体装置の製造方法であり、
前記ワイヤボンディング装置は、
前記載置台上に設けられ、前記周端を押さえるクランパーと、
前記クランパーから露出する領域を照らし、前記クランパーの上方に備えた照明と、
前記照明の側面に備えたキャピラリーと、
前記照明の上方に、パターン認識用のカメラが内蔵された鏡筒とを少なくとも有し、
前記載置台および前記クランパーから成るスペースは、前記ヒータ機能を備えた載置台により高温に維持され、前記クランパーの押圧で前記高温に維持された載置台に当接することにより、前記リードフレームの前記集合ブロックを加熱し、
前記高温に維持されたスペースに窒素ガスを吹き込むことで、前記スペースから流出する加熱された窒素ガスが前記照明に流入するのを防止するため、前記照明の下端に透明な遮蔽蓋を設け、
且つ前記鏡筒へ向かう前記加熱された窒素ガスをブローするブロー装置が、前記照明から離れた位置に設けられ、
前記パターン認識用のカメラのデータに基づいてワイヤボンディングする事を特徴とした半導体装置の製造方法。 - 前記照明は、リング照明で、前記リング照明の上端および下端、または前記リング照明の上端に前記透明な遮蔽蓋が設けられる請求項1に記載の半導体装置の製造方法。
- 前記クランパーから前記窒素ガスが吹き込まれる請求項1または請求項2に記載の半導体装置の製造方法。
- 前記ワイヤボンディングが終了した後に、絶縁性樹脂で共通モールドされる請求項1、請求項2または請求項3に記載の半導体装置の製造方法。
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Citations (8)
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JPS62276840A (ja) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | ボンデイング装置 |
JPH0195527A (ja) * | 1987-10-07 | 1989-04-13 | Mitsubishi Electric Corp | ワイヤボンデイング装置 |
JPH02112246A (ja) * | 1988-10-21 | 1990-04-24 | Hitachi Ltd | ボンディング装置 |
JPH08330350A (ja) * | 1995-05-30 | 1996-12-13 | Shinkawa Ltd | ワイヤボンディング装置 |
JPH09139399A (ja) * | 1995-11-16 | 1997-05-27 | Toshiba Electron Eng Corp | 画像認識方法、その装置、ワイヤボンダ画像認識方法およびその装置 |
JPH1140614A (ja) * | 1997-07-18 | 1999-02-12 | Toshiba Corp | 実装装置 |
JP2000077593A (ja) * | 1998-08-27 | 2000-03-14 | Hitachi Cable Ltd | 半導体用リードフレーム |
JP2003007760A (ja) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | 認識装置、ボンディング装置および回路装置の製造方法 |
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2009
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JPS62276840A (ja) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | ボンデイング装置 |
JPH0195527A (ja) * | 1987-10-07 | 1989-04-13 | Mitsubishi Electric Corp | ワイヤボンデイング装置 |
JPH02112246A (ja) * | 1988-10-21 | 1990-04-24 | Hitachi Ltd | ボンディング装置 |
JPH08330350A (ja) * | 1995-05-30 | 1996-12-13 | Shinkawa Ltd | ワイヤボンディング装置 |
JPH09139399A (ja) * | 1995-11-16 | 1997-05-27 | Toshiba Electron Eng Corp | 画像認識方法、その装置、ワイヤボンダ画像認識方法およびその装置 |
JPH1140614A (ja) * | 1997-07-18 | 1999-02-12 | Toshiba Corp | 実装装置 |
JP2000077593A (ja) * | 1998-08-27 | 2000-03-14 | Hitachi Cable Ltd | 半導体用リードフレーム |
JP2003007760A (ja) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | 認識装置、ボンディング装置および回路装置の製造方法 |
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