JP4716225B2 - フォトレジスト剥離剤組成物 - Google Patents

フォトレジスト剥離剤組成物 Download PDF

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Publication number
JP4716225B2
JP4716225B2 JP2007129699A JP2007129699A JP4716225B2 JP 4716225 B2 JP4716225 B2 JP 4716225B2 JP 2007129699 A JP2007129699 A JP 2007129699A JP 2007129699 A JP2007129699 A JP 2007129699A JP 4716225 B2 JP4716225 B2 JP 4716225B2
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JP
Japan
Prior art keywords
weight
photoresist stripping
photoresist
alloy wiring
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007129699A
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English (en)
Japanese (ja)
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JP2008286881A (ja
JP2008286881A5 (https=
Inventor
崇史 山邊
佳孝 西嶋
秀国 安江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nagase Chemtex Corp
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Nagase Chemtex Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nagase Chemtex Corp filed Critical Nagase Chemtex Corp
Priority to JP2007129699A priority Critical patent/JP4716225B2/ja
Priority to TW097116444A priority patent/TWI434150B/zh
Priority to CN2008800160126A priority patent/CN101681129B/zh
Priority to KR1020097024223A priority patent/KR101420471B1/ko
Priority to PCT/JP2008/058750 priority patent/WO2008140076A1/ja
Publication of JP2008286881A publication Critical patent/JP2008286881A/ja
Publication of JP2008286881A5 publication Critical patent/JP2008286881A5/ja
Application granted granted Critical
Publication of JP4716225B2 publication Critical patent/JP4716225B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007129699A 2007-05-15 2007-05-15 フォトレジスト剥離剤組成物 Active JP4716225B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007129699A JP4716225B2 (ja) 2007-05-15 2007-05-15 フォトレジスト剥離剤組成物
TW097116444A TWI434150B (zh) 2007-05-15 2008-05-05 光阻剝離劑組成物
CN2008800160126A CN101681129B (zh) 2007-05-15 2008-05-13 光致抗蚀剂剥离剂组合物
KR1020097024223A KR101420471B1 (ko) 2007-05-15 2008-05-13 포토레지스트 박리제조성물
PCT/JP2008/058750 WO2008140076A1 (ja) 2007-05-15 2008-05-13 フォトレジスト剥離剤組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007129699A JP4716225B2 (ja) 2007-05-15 2007-05-15 フォトレジスト剥離剤組成物

Publications (3)

Publication Number Publication Date
JP2008286881A JP2008286881A (ja) 2008-11-27
JP2008286881A5 JP2008286881A5 (https=) 2011-03-31
JP4716225B2 true JP4716225B2 (ja) 2011-07-06

Family

ID=40002266

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007129699A Active JP4716225B2 (ja) 2007-05-15 2007-05-15 フォトレジスト剥離剤組成物

Country Status (5)

Country Link
JP (1) JP4716225B2 (https=)
KR (1) KR101420471B1 (https=)
CN (1) CN101681129B (https=)
TW (1) TWI434150B (https=)
WO (1) WO2008140076A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102124414B (zh) * 2009-04-17 2014-04-02 长瀬化成株式会社 光致抗蚀剂剥离剂组合物以及光致抗蚀剂剥离方法
CN102639686B (zh) * 2009-07-29 2014-09-03 东友Fine-Chem股份有限公司 清洁组成物及使用该组成物清洁面板的方法
JP5023128B2 (ja) 2009-10-07 2012-09-12 東京エレクトロン株式会社 塗布現像装置及び塗布現像方法
JP5709075B2 (ja) * 2010-09-10 2015-04-30 ナガセケムテックス株式会社 リン酸及び／又はリン酸塩の水溶液のパーティクル数経時安定化方法及びレジスト残渣剥離剤組成物
KR101089211B1 (ko) * 2010-12-02 2011-12-02 엘티씨 (주) 1차 알칸올 아민을 포함하는 ｌｃｄ 제조용 포토레지스트 박리액 조성물
JP5885046B1 (ja) * 2015-03-24 2016-03-15 パナソニックＩｐマネジメント株式会社 レジスト剥離液
CN111781808B (zh) * 2015-09-16 2024-06-07 东友精细化工有限公司 抗蚀剂剥离液组合物、平板显示器基板及其制造方法
JPWO2017065153A1 (ja) * 2015-10-13 2018-07-26 ナガセケムテックス株式会社 フォトレジスト剥離液
WO2018061064A1 (ja) * 2016-09-30 2018-04-05 パナソニックＩｐマネジメント株式会社 レジスト剥離液
US11149235B2 (en) 2018-07-20 2021-10-19 Entegris, Inc. Cleaning composition with corrosion inhibitor
KR102334425B1 (ko) 2019-11-21 2021-12-01 엘티씨 (주) 디스플레이 제조용 포토레지스트 박리액 조성물

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08262746A (ja) * 1995-03-28 1996-10-11 Mitsubishi Gas Chem Co Inc フォトレジスト剥離剤組成物および剥離方法
JP2001350276A (ja) * 2000-06-05 2001-12-21 Nagase Kasei Kogyo Kk フォトレジスト剥離剤組成物及びその使用方法
JP4692799B2 (ja) * 2001-05-22 2011-06-01 ナガセケムテックス株式会社 レジスト剥離用組成物
JP2004287288A (ja) * 2003-03-24 2004-10-14 Nagase Chemtex Corp レジスト剥離用組成物及びレジスト剥離方法
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
JP4692497B2 (ja) * 2007-02-28 2011-06-01 ナガセケムテックス株式会社 フォトレジスト剥離剤組成物

Also Published As

Publication number Publication date
TW200900884A (en) 2009-01-01
TWI434150B (zh) 2014-04-11
CN101681129B (zh) 2012-05-30
KR20100017192A (ko) 2010-02-16
CN101681129A (zh) 2010-03-24
KR101420471B1 (ko) 2014-07-16
JP2008286881A (ja) 2008-11-27
WO2008140076A1 (ja) 2008-11-20

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