JP4709639B2 - マスクパターン評価方法及び評価装置 - Google Patents

マスクパターン評価方法及び評価装置 Download PDF

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Publication number
JP4709639B2
JP4709639B2 JP2005357935A JP2005357935A JP4709639B2 JP 4709639 B2 JP4709639 B2 JP 4709639B2 JP 2005357935 A JP2005357935 A JP 2005357935A JP 2005357935 A JP2005357935 A JP 2005357935A JP 4709639 B2 JP4709639 B2 JP 4709639B2
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JP
Japan
Prior art keywords
pattern
contour
data
pattern image
sidewall angle
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Expired - Lifetime
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JP2005357935A
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English (en)
Japanese (ja)
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JP2007163686A (ja
Inventor
正光 伊藤
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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2005357935A priority Critical patent/JP4709639B2/ja
Priority to TW095145690A priority patent/TW200734810A/zh
Priority to KR1020060125465A priority patent/KR100832660B1/ko
Priority to US11/636,631 priority patent/US8189903B2/en
Publication of JP2007163686A publication Critical patent/JP2007163686A/ja
Application granted granted Critical
Publication of JP4709639B2 publication Critical patent/JP4709639B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2005357935A 2005-12-12 2005-12-12 マスクパターン評価方法及び評価装置 Expired - Lifetime JP4709639B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005357935A JP4709639B2 (ja) 2005-12-12 2005-12-12 マスクパターン評価方法及び評価装置
TW095145690A TW200734810A (en) 2005-12-12 2006-12-07 Method and apparatus for evaluating photomask, and method for manufacturing semiconductor device
KR1020060125465A KR100832660B1 (ko) 2005-12-12 2006-12-11 포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법
US11/636,631 US8189903B2 (en) 2005-12-12 2006-12-11 Photomask evaluation based on lithographic simulation using sidewall angle of photomask pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005357935A JP4709639B2 (ja) 2005-12-12 2005-12-12 マスクパターン評価方法及び評価装置

Publications (2)

Publication Number Publication Date
JP2007163686A JP2007163686A (ja) 2007-06-28
JP4709639B2 true JP4709639B2 (ja) 2011-06-22

Family

ID=38195373

Family Applications (1)

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JP2005357935A Expired - Lifetime JP4709639B2 (ja) 2005-12-12 2005-12-12 マスクパターン評価方法及び評価装置

Country Status (4)

Country Link
US (1) US8189903B2 (enExample)
JP (1) JP4709639B2 (enExample)
KR (1) KR100832660B1 (enExample)
TW (1) TW200734810A (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816225B2 (ja) * 2006-04-27 2011-11-16 凸版印刷株式会社 レベンソン型位相シフトマスク
JP4675854B2 (ja) 2006-07-25 2011-04-27 株式会社東芝 パターン評価方法と評価装置及びパターン評価プログラム
US8335369B2 (en) * 2007-02-28 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Mask defect analysis
JP4846635B2 (ja) * 2007-03-22 2011-12-28 株式会社東芝 パターン情報生成方法
JP4856047B2 (ja) * 2007-11-12 2012-01-18 株式会社東芝 マスクパターン寸法検査方法およびマスクパターン寸法検査装置
JP2010038944A (ja) 2008-07-31 2010-02-18 Toshiba Corp フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法
US8948513B2 (en) * 2009-01-27 2015-02-03 Apple Inc. Blurring based content recognizer
JP5672800B2 (ja) * 2010-07-02 2015-02-18 凸版印刷株式会社 フォトマスクの評価システム及びその方法
US8905314B2 (en) 2010-09-30 2014-12-09 Apple Inc. Barcode recognition using data-driven classifier
US8901492B1 (en) * 2013-07-16 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional semiconductor image reconstruction apparatus and method
KR102170143B1 (ko) 2013-08-19 2020-10-26 삼성전자주식회사 노출 허용도 오차 및 레지스트레이션 오차가 보정된 포토마스크 및 그의 레지스트레이션 보정방법
KR102154075B1 (ko) 2013-10-21 2020-09-09 삼성전자주식회사 반도체 소자의 검사 방법 및 반도체 검사 시스템
KR102085522B1 (ko) 2013-11-14 2020-03-06 삼성전자 주식회사 패턴의 결함 탐지 방법
EP3963401A1 (en) * 2019-05-02 2022-03-09 ASML Netherlands B.V. A patterning device
CN112230507B (zh) * 2020-10-22 2024-06-28 泉芯集成电路制造(济南)有限公司 光学邻近矫正模型构建方法、装置及计算机设备

Family Cites Families (22)

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Publication number Priority date Publication date Assignee Title
JP3339174B2 (ja) * 1993-11-08 2002-10-28 ソニー株式会社 フォトマスクの製造方法、露光方法及び半導体装置の製造方法
US6091845A (en) 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6999611B1 (en) 1999-02-13 2006-02-14 Kla-Tencor Corporation Reticle defect detection using simulation
JP4158266B2 (ja) * 1999-03-11 2008-10-01 凸版印刷株式会社 フォトマスク外観検査装置
JP4597509B2 (ja) 1999-08-26 2010-12-15 株式会社ナノジオメトリ研究所 パターン検査装置およびパターン検査方法
US7120285B1 (en) * 2000-02-29 2006-10-10 Advanced Micro Devices, Inc. Method for evaluation of reticle image using aerial image simulator
US6559048B1 (en) * 2001-05-30 2003-05-06 Lsi Logic Corporation Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
JP2003207879A (ja) * 2002-01-17 2003-07-25 Sony Corp 位相シフトマスクの検査方法、位相シフトマスクの作製方法、位相シフトマスクによるパターン露光方法
US7136796B2 (en) * 2002-02-28 2006-11-14 Timbre Technologies, Inc. Generation and use of integrated circuit profile-based simulation information
JP3708058B2 (ja) * 2002-02-28 2005-10-19 株式会社東芝 フォトマスクの製造方法およびそのフォトマスクを用いた半導体装置の製造方法
US6783904B2 (en) * 2002-05-17 2004-08-31 Freescale Semiconductor, Inc. Lithography correction method and device
TWI229894B (en) * 2002-09-05 2005-03-21 Toshiba Corp Mask defect inspecting method, semiconductor device manufacturing method, mask defect inspecting apparatus, generating method of defect influence map, and computer program product
JP4302965B2 (ja) * 2002-11-01 2009-07-29 株式会社日立ハイテクノロジーズ 半導体デバイスの製造方法及びその製造システム
JP3825744B2 (ja) * 2002-12-02 2006-09-27 株式会社東芝 フォトマスクの製造方法及び半導体装置の製造方法
JP2004330310A (ja) * 2003-04-30 2004-11-25 Ricoh Co Ltd 微細形状作製方法
JP2005189491A (ja) * 2003-12-25 2005-07-14 Sii Nanotechnology Inc 転写もしくは光強度シミュレーションを用いたフォトマスクの欠陥修正方法
JP4432575B2 (ja) * 2004-03-29 2010-03-17 凸版印刷株式会社 パターン画像判定方法
US7313781B2 (en) 2004-05-28 2007-12-25 Kabushiki Kaisha Toshiba Image data correction method, lithography simulation method, image data correction system, program, mask and method of manufacturing a semiconductor device
US20080233487A1 (en) * 2007-03-21 2008-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and System for Optimizing Lithography Focus and/or Energy Using a Specially-Designed Optical Critical Dimension Pattern
JP4856047B2 (ja) * 2007-11-12 2012-01-18 株式会社東芝 マスクパターン寸法検査方法およびマスクパターン寸法検査装置
JP5103219B2 (ja) * 2008-02-22 2012-12-19 株式会社日立ハイテクノロジーズ パターン寸法計測方法

Also Published As

Publication number Publication date
KR100832660B1 (ko) 2008-05-27
KR20070062427A (ko) 2007-06-15
US20070150850A1 (en) 2007-06-28
JP2007163686A (ja) 2007-06-28
TWI322329B (enExample) 2010-03-21
TW200734810A (en) 2007-09-16
US8189903B2 (en) 2012-05-29

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