KR100832660B1 - 포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법 - Google Patents

포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법 Download PDF

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Publication number
KR100832660B1
KR100832660B1 KR1020060125465A KR20060125465A KR100832660B1 KR 100832660 B1 KR100832660 B1 KR 100832660B1 KR 1020060125465 A KR1020060125465 A KR 1020060125465A KR 20060125465 A KR20060125465 A KR 20060125465A KR 100832660 B1 KR100832660 B1 KR 100832660B1
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South Korea
Prior art keywords
pattern
photomask
contour
pattern image
sidewall angle
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KR1020060125465A
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Korean (ko)
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KR20070062427A (ko
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마사미쯔 이또
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가부시끼가이샤 도시바
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G03F1/86—Inspecting by charged particle beam [CPB]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020060125465A 2005-12-12 2006-12-11 포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법 Expired - Fee Related KR100832660B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00357935 2005-12-12
JP2005357935A JP4709639B2 (ja) 2005-12-12 2005-12-12 マスクパターン評価方法及び評価装置

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KR20070062427A KR20070062427A (ko) 2007-06-15
KR100832660B1 true KR100832660B1 (ko) 2008-05-27

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KR1020060125465A Expired - Fee Related KR100832660B1 (ko) 2005-12-12 2006-12-11 포토마스크의 평가 방법, 평가 장치, 및 반도체 장치의제조 방법

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Country Link
US (1) US8189903B2 (enExample)
JP (1) JP4709639B2 (enExample)
KR (1) KR100832660B1 (enExample)
TW (1) TW200734810A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9542740B2 (en) 2013-11-14 2017-01-10 Samsung Electronics Co., Ltd. Method for detecting defect in pattern

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JP4816225B2 (ja) * 2006-04-27 2011-11-16 凸版印刷株式会社 レベンソン型位相シフトマスク
JP4675854B2 (ja) 2006-07-25 2011-04-27 株式会社東芝 パターン評価方法と評価装置及びパターン評価プログラム
US8335369B2 (en) * 2007-02-28 2012-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Mask defect analysis
JP4846635B2 (ja) * 2007-03-22 2011-12-28 株式会社東芝 パターン情報生成方法
JP4856047B2 (ja) * 2007-11-12 2012-01-18 株式会社東芝 マスクパターン寸法検査方法およびマスクパターン寸法検査装置
JP2010038944A (ja) 2008-07-31 2010-02-18 Toshiba Corp フォトマスクの製造方法及びこのフォトマスクを用いた半導体デバイスの製造方法
US8948513B2 (en) * 2009-01-27 2015-02-03 Apple Inc. Blurring based content recognizer
JP5672800B2 (ja) * 2010-07-02 2015-02-18 凸版印刷株式会社 フォトマスクの評価システム及びその方法
US8905314B2 (en) 2010-09-30 2014-12-09 Apple Inc. Barcode recognition using data-driven classifier
US8901492B1 (en) * 2013-07-16 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Three-dimensional semiconductor image reconstruction apparatus and method
KR102170143B1 (ko) 2013-08-19 2020-10-26 삼성전자주식회사 노출 허용도 오차 및 레지스트레이션 오차가 보정된 포토마스크 및 그의 레지스트레이션 보정방법
KR102154075B1 (ko) 2013-10-21 2020-09-09 삼성전자주식회사 반도체 소자의 검사 방법 및 반도체 검사 시스템
WO2020221547A1 (en) * 2019-05-02 2020-11-05 Asml Netherlands B.V. A patterning device
CN112230507B (zh) * 2020-10-22 2024-06-28 泉芯集成电路制造(济南)有限公司 光学邻近矫正模型构建方法、装置及计算机设备

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KR20040022172A (ko) * 2002-09-05 2004-03-11 가부시끼가이샤 도시바 마스크 결함 검사 방법, 반도체 장치의 제조 방법, 마스크결함 검사 장치, 결함 영향도 맵 생성 방법 및 컴퓨터프로그램 프로덕트
KR20040048319A (ko) * 2002-12-02 2004-06-07 가부시끼가이샤 도시바 포토마스크의 제조 방법 및 반도체 장치의 제조 방법

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JP3339174B2 (ja) * 1993-11-08 2002-10-28 ソニー株式会社 フォトマスクの製造方法、露光方法及び半導体装置の製造方法
US6091845A (en) * 1998-02-24 2000-07-18 Micron Technology, Inc. Inspection technique of photomask
US6999611B1 (en) * 1999-02-13 2006-02-14 Kla-Tencor Corporation Reticle defect detection using simulation
JP4158266B2 (ja) * 1999-03-11 2008-10-01 凸版印刷株式会社 フォトマスク外観検査装置
JP4597509B2 (ja) 1999-08-26 2010-12-15 株式会社ナノジオメトリ研究所 パターン検査装置およびパターン検査方法
US7120285B1 (en) * 2000-02-29 2006-10-10 Advanced Micro Devices, Inc. Method for evaluation of reticle image using aerial image simulator
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JP2003207879A (ja) * 2002-01-17 2003-07-25 Sony Corp 位相シフトマスクの検査方法、位相シフトマスクの作製方法、位相シフトマスクによるパターン露光方法
US7136796B2 (en) * 2002-02-28 2006-11-14 Timbre Technologies, Inc. Generation and use of integrated circuit profile-based simulation information
JP3708058B2 (ja) * 2002-02-28 2005-10-19 株式会社東芝 フォトマスクの製造方法およびそのフォトマスクを用いた半導体装置の製造方法
US6783904B2 (en) * 2002-05-17 2004-08-31 Freescale Semiconductor, Inc. Lithography correction method and device
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US20080233487A1 (en) * 2007-03-21 2008-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method and System for Optimizing Lithography Focus and/or Energy Using a Specially-Designed Optical Critical Dimension Pattern
JP4856047B2 (ja) * 2007-11-12 2012-01-18 株式会社東芝 マスクパターン寸法検査方法およびマスクパターン寸法検査装置
JP5103219B2 (ja) * 2008-02-22 2012-12-19 株式会社日立ハイテクノロジーズ パターン寸法計測方法

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KR20040022172A (ko) * 2002-09-05 2004-03-11 가부시끼가이샤 도시바 마스크 결함 검사 방법, 반도체 장치의 제조 방법, 마스크결함 검사 장치, 결함 영향도 맵 생성 방법 및 컴퓨터프로그램 프로덕트
KR20040048319A (ko) * 2002-12-02 2004-06-07 가부시끼가이샤 도시바 포토마스크의 제조 방법 및 반도체 장치의 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9542740B2 (en) 2013-11-14 2017-01-10 Samsung Electronics Co., Ltd. Method for detecting defect in pattern

Also Published As

Publication number Publication date
TW200734810A (en) 2007-09-16
TWI322329B (enExample) 2010-03-21
JP4709639B2 (ja) 2011-06-22
US8189903B2 (en) 2012-05-29
US20070150850A1 (en) 2007-06-28
KR20070062427A (ko) 2007-06-15
JP2007163686A (ja) 2007-06-28

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