JP4700317B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4700317B2
JP4700317B2 JP2004289047A JP2004289047A JP4700317B2 JP 4700317 B2 JP4700317 B2 JP 4700317B2 JP 2004289047 A JP2004289047 A JP 2004289047A JP 2004289047 A JP2004289047 A JP 2004289047A JP 4700317 B2 JP4700317 B2 JP 4700317B2
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JP
Japan
Prior art keywords
layer
electrode layer
semiconductor
film
forming
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Expired - Fee Related
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JP2004289047A
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English (en)
Japanese (ja)
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JP2006106110A (ja
JP2006106110A5 (enExample
Inventor
舜平 山崎
裕子 城口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004289047A priority Critical patent/JP4700317B2/ja
Publication of JP2006106110A publication Critical patent/JP2006106110A/ja
Publication of JP2006106110A5 publication Critical patent/JP2006106110A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
JP2004289047A 2004-09-30 2004-09-30 表示装置の作製方法 Expired - Fee Related JP4700317B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004289047A JP4700317B2 (ja) 2004-09-30 2004-09-30 表示装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004289047A JP4700317B2 (ja) 2004-09-30 2004-09-30 表示装置の作製方法

Publications (3)

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JP2006106110A JP2006106110A (ja) 2006-04-20
JP2006106110A5 JP2006106110A5 (enExample) 2007-11-08
JP4700317B2 true JP4700317B2 (ja) 2011-06-15

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JP2004289047A Expired - Fee Related JP4700317B2 (ja) 2004-09-30 2004-09-30 表示装置の作製方法

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JP (1) JP4700317B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5216204B2 (ja) * 2006-10-31 2013-06-19 株式会社半導体エネルギー研究所 液晶表示装置及びその作製方法
JP2008311545A (ja) * 2007-06-18 2008-12-25 Hitachi Displays Ltd 表示装置
US8101442B2 (en) * 2008-03-05 2012-01-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing EL display device
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI567829B (zh) * 2008-10-31 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2284891B1 (en) * 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
WO2011132376A1 (ja) * 2010-04-21 2011-10-27 シャープ株式会社 薄膜トランジスタ基板
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103155019B (zh) * 2011-09-30 2016-01-20 株式会社日本有机雷特显示器 薄膜晶体管阵列装置、el显示面板、el显示装置、薄膜晶体管阵列装置的制造方法以及el显示面板的制造方法
WO2013168687A1 (en) * 2012-05-10 2013-11-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2020128673A1 (ja) * 2018-12-21 2020-06-25 株式会社半導体エネルギー研究所 半導体装置、並びに電子機器及び人工衛星

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2655941B2 (ja) * 1991-01-30 1997-09-24 シャープ株式会社 アクティブマトリクス型液晶表示装置およびその製造方法
JPH0675248A (ja) * 1992-06-30 1994-03-18 Sony Corp アクティブマトリクス基板
JP3190483B2 (ja) * 1993-05-21 2001-07-23 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3246145B2 (ja) * 1993-12-24 2002-01-15 ソニー株式会社 ドライエッチング方法
JP3535275B2 (ja) * 1995-07-18 2004-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
JP4236716B2 (ja) * 1997-09-29 2009-03-11 株式会社半導体エネルギー研究所 半導体装置
JP2000172198A (ja) * 1998-12-01 2000-06-23 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
JP4545260B2 (ja) * 1998-12-03 2010-09-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4656685B2 (ja) * 1999-01-14 2011-03-23 株式会社半導体エネルギー研究所 半導体装置
JP3420135B2 (ja) * 1999-10-26 2003-06-23 日本電気株式会社 アクティブマトリクス基板の製造方法
JP2001135573A (ja) * 1999-11-02 2001-05-18 Sharp Corp 半導体装置の製造方法およびその半導体装置
JP2001320056A (ja) * 2000-05-10 2001-11-16 Sony Corp 薄膜トランジスタの製造方法及び薄膜半導体装置
JP4830189B2 (ja) * 2000-09-12 2011-12-07 ソニー株式会社 薄膜トランジスタの製造方法、液晶表示装置の製造方法及びエレクトロルミネッセンス表示装置の製造方法
JP2002246601A (ja) * 2001-02-16 2002-08-30 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
JP4718700B2 (ja) * 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4731718B2 (ja) * 2001-04-27 2011-07-27 株式会社半導体エネルギー研究所 表示装置
JP3638926B2 (ja) * 2001-09-10 2005-04-13 株式会社半導体エネルギー研究所 発光装置及び半導体装置の作製方法
JP4837871B2 (ja) * 2001-11-28 2011-12-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4526773B2 (ja) * 2002-03-26 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004022900A (ja) * 2002-06-18 2004-01-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2004031543A (ja) * 2002-06-25 2004-01-29 Semiconductor Energy Lab Co Ltd 薄膜トランジスタの作製方法

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JP2006106110A (ja) 2006-04-20

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