JP4671765B2 - 記憶装置及びその作製方法 - Google Patents

記憶装置及びその作製方法 Download PDF

Info

Publication number
JP4671765B2
JP4671765B2 JP2005164090A JP2005164090A JP4671765B2 JP 4671765 B2 JP4671765 B2 JP 4671765B2 JP 2005164090 A JP2005164090 A JP 2005164090A JP 2005164090 A JP2005164090 A JP 2005164090A JP 4671765 B2 JP4671765 B2 JP 4671765B2
Authority
JP
Japan
Prior art keywords
region
electrode
film
memory
tft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005164090A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006114875A5 (enExample
JP2006114875A (ja
Inventor
清 加藤
哲司 山口
悦子 浅野
小波 泉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005164090A priority Critical patent/JP4671765B2/ja
Publication of JP2006114875A publication Critical patent/JP2006114875A/ja
Publication of JP2006114875A5 publication Critical patent/JP2006114875A5/ja
Application granted granted Critical
Publication of JP4671765B2 publication Critical patent/JP4671765B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2005164090A 2004-06-03 2005-06-03 記憶装置及びその作製方法 Expired - Fee Related JP4671765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005164090A JP4671765B2 (ja) 2004-06-03 2005-06-03 記憶装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004166274 2004-06-03
JP2004270418 2004-09-16
JP2005164090A JP4671765B2 (ja) 2004-06-03 2005-06-03 記憶装置及びその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010257134A Division JP5111593B2 (ja) 2004-06-03 2010-11-17 記憶装置及びデータ書き込み方法

Publications (3)

Publication Number Publication Date
JP2006114875A JP2006114875A (ja) 2006-04-27
JP2006114875A5 JP2006114875A5 (enExample) 2008-07-17
JP4671765B2 true JP4671765B2 (ja) 2011-04-20

Family

ID=36383097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005164090A Expired - Fee Related JP4671765B2 (ja) 2004-06-03 2005-06-03 記憶装置及びその作製方法

Country Status (1)

Country Link
JP (1) JP4671765B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4884784B2 (ja) * 2005-01-28 2012-02-29 株式会社半導体エネルギー研究所 半導体装置の作製方法及び半導体装置
CN101523611B (zh) * 2006-10-04 2012-07-04 株式会社半导体能源研究所 半导体器件及其制造方法
US7994607B2 (en) 2007-02-02 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5525694B2 (ja) 2007-03-14 2014-06-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5198785B2 (ja) 2007-03-30 2013-05-15 ルネサスエレクトロニクス株式会社 半導体装置
KR100873705B1 (ko) 2007-06-22 2008-12-12 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
JP4535136B2 (ja) * 2008-01-17 2010-09-01 ソニー株式会社 半導体集積回路、および、スイッチの配置配線方法
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9217743D0 (en) * 1992-08-19 1992-09-30 Philips Electronics Uk Ltd A semiconductor memory device
GB9416899D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuitry
JPH1140758A (ja) * 1997-07-23 1999-02-12 Fujitsu Ltd 記憶装置及びその製造方法、並びに情報書き込み方法及び情報読み出し方法

Also Published As

Publication number Publication date
JP2006114875A (ja) 2006-04-27

Similar Documents

Publication Publication Date Title
JP5111593B2 (ja) 記憶装置及びデータ書き込み方法
US6841793B2 (en) Phase-changeable devices having an insulating buffer layer and methods of fabricating the same
JP4148995B2 (ja) 書き込み可能な不揮発性メモリデバイス及びこのデバイスの製造方法
US7858985B2 (en) Integrated circuit, semiconductor device comprising the same, electronic device having the same, and driving method of the same
JP4545397B2 (ja) 画像表示装置
JP4776801B2 (ja) メモリ回路
CN100474629C (zh) 无线芯片及其制造方法
WO2013080784A1 (ja) メモリ回路とその駆動方法、及び、これを用いた不揮発性記憶装置、並びに、液晶表示装置
JP6034980B2 (ja) 半導体装置
US6740925B2 (en) Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the same
JPH1187545A (ja) 半導体不揮発性記憶装置およびその製造方法
JP4671765B2 (ja) 記憶装置及びその作製方法
JP4520294B2 (ja) ボトムゲート型ｔｆｔを備えた電子装置を製造する方法
US9754978B2 (en) Semiconductor device with U-shaped active portion
JP2005244230A (ja) 異なるポリシリコングレインサイズの領域を有するポリシリコン層の形成方法、液晶ディスプレイ装置及びその製造方法
US8193606B2 (en) Semiconductor device including a memory element
JPH0763077B2 (ja) 薄膜半導体素子
JP2004297048A (ja) 集積回路、該集積回路を有する半導体表示装置及び集積回路の駆動方法
CN1965408A (zh) 存储器件及其制造方法
JP4421197B2 (ja) 半導体装置の作製方法
JP2004006725A (ja) 半導体装置、その作製方法及び設計方法
JP4499754B2 (ja) 半導体装置
JPH08288468A (ja) 半導体記憶装置およびその書き込み方法
JP2009176831A (ja) 不揮発性半導体記憶素子及びその製造方法並びに表示装置
WO2007138754A1 (ja) 半導体装置、その製造方法、及び、表示装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080603

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080603

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20101026

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20101028

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101117

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110111

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110118

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140128

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees