JP4665029B2 - 不揮発性メモリの読み出し動作中の結合の補償 - Google Patents
不揮発性メモリの読み出し動作中の結合の補償 Download PDFInfo
- Publication number
- JP4665029B2 JP4665029B2 JP2008505380A JP2008505380A JP4665029B2 JP 4665029 B2 JP4665029 B2 JP 4665029B2 JP 2008505380 A JP2008505380 A JP 2008505380A JP 2008505380 A JP2008505380 A JP 2008505380A JP 4665029 B2 JP4665029 B2 JP 4665029B2
- Authority
- JP
- Japan
- Prior art keywords
- data
- read
- volatile storage
- page
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5648—Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
本出願は、この出願と同日に出願されたJian Chen、Raul−Adrian Cernea及びGerrit Jan Heminkによる米国特許出願、発明の名称「Compensating For Coupling In Non−Volatile Storage」、代理人ドケット番号SAND−01041US0に関連付けられ、その全体は参照により本明細書に組み込まれる。
検出モジュール380(図8を参照)は、起動信号BLS(図14(A))によってビットライン36に接続される。電圧クランプは、BLC(図14(B))によって起動される。事前充電回路640は、制御信号FLT(図14(C))を備えた制限電流源として起動される。
検出増幅部600は、トランジスタ658を介して信号INVを接地させるリセット信号RST(図14(D))によって初期化される。従って、リセットのときに、INVはLOWに設定される。同時に、pトランジスタ663は相補信号LATをVdd、つまりHIGH(図14(H))に引き上げる。
制御された事前充電段階後、最初のDC高電流検出段階が始まり、信号SENが識別回路650によって検出される。検出では、所定レベルよりも高い伝導電流を備えているメモリセルを識別する。識別回路650は2つのpトランジスタ654と656を直列に備えており、それらは信号INVを記録するノード657の引き上げとして機能する。pトランジスタ654はLOWになる読み出しストローブ信号STBによって起動され、pトランジスタ656はLOWになる内部検出ノード631におけるSEN信号によって起動される。高電流メモリセルは、信号SENを0V近くにするか、もしくは、少なくともビットラインがpトランジスタ656をオフにするほど十分に高く事前充電されること不可能にする。例えば、弱い引き上げが500nAの電流に制限された場合、700nAの伝導電流を備えたセルは引き上げない(図14(G1))。STBがラッチするためにLOWにストローブすると、ノード657におけるINVはVddに引き上げられる。これは、ラッチ回路660のINVをHIGH、LATをLOWに設定する(図14(H1))。
前もって引き下げられていないビットライン内の伝導電流を検出する前に、事前充電回路は信号FLTをLOWにすることによって起動され、内部検出ノード631をVddに事前充電し(図14(C)と図14(I2)〜14(I4))、隣接ビットライン上の電圧低下のために部分的に下に結合されたかもしれないビットラインに事前充電する。
一実施形態では、AC(交流、過渡電流)検出は、浮遊させた内部検出ノード631における電圧降下を決定することによって実行される。これは、内部検出ノード631に接続したキャパシタCSA652を利用し、伝導電流がそれを充電する(ノードSEN上の電圧を低減する)速度を考慮する識別又は比較回路650によって実現される。集積回路環境では、キャパシタ652は一般的にトランジスタとともに実装されるが、他の実装形態であってもよい。キャパシタ652は所定の静電容量(例えば、30fF)を有し、それは最適な電流を決定するために選択される。限界電流値(一般的に、100〜1000nAの範囲内)は、充電期間の適切な調整によって設定される。
第1の所定検出期間の最後で、SENは、ビットライン内の伝導電流に依存するある電圧まで減少する(図14(G)の曲線G2〜G4を参照)。一例として、この第1段階の限界電流は、300nAとなるように設定される。キャパシタCSA652、検出期間T1及びpトランジスタ656の閾値電圧は、限界電流(例えば、300nA)よりも高い伝導電流に対応する信号SENが、識別回路650内のトランジスタ656をオンにするのに十分な低さになるようにする。ラッチ信号STBがLOWにストローブすると、出力信号INVはHIGHに引っ張られ、ラッチ660によってラッチされる(図14(E)と図14(H)(曲線H2))。一方、限界電流より低い伝導電流に対応する信号SENは、トランジスタ656をオン状態にできない信号SENを生成する。この場合、ラッチ660は変化しないままであり、その場合はLATはHIGHに留まる(図14(H3)と14(H4))。従って、識別回路650は、検出期間によって設定された基準電流に対して、ビットライン内の伝導電流の大きさを実質的に決定することが分かる。
予め引き下げられていないビットライン36などのビットライン内の伝導電流の次の検出の前に、事前充電回路が信号FLTによって起動され、内部検出ノード631をVddまで事前充電する(図14(C)(6)及び図14(I3)(6)〜14(I4)(6))。
検出増幅部600が検出しようとすると、事前充電回路642は、FLTがHIGHなることによって停止させられる(図14(C))。第2検出期間T2は、ストローブ信号STBのアサートによって設定される。検出期間中、伝導電流は(もしあれば)、キャパシタを充電する。キャパシタ652がビットライン36内の伝導電流の排出動作を介して充電しているときに、SENはVddから低下する。
第2の所定検出期間T2の最後で、SENはビットライン36内の伝導電流に依存して同じ電圧まで低下する(図14(G)(曲線G3とG4))。1例として、第2段階の限界電流は、100nAとなるように設定される。この場合、220nAの伝導電流を備えたメモリセルは、そのINVをHIGHにラッチし(図14(H))、次にビットラインを接地させる(図14(I3))。一方、40nAの伝導電流を備えたメモリセルは、ラッチの(LATをHIGHに設定した)状態に影響を与えない。
最後に、読み出し段階では、転送ゲート488における制御信号NCOは、ラッチした信号SEN2を読み出して、バス499に読み出すことを可能にする(図14(J)と14(K))。
Claims (25)
- 第1不揮発性記憶要素の集合のデータを読み出す方法であって、
1つ以上の読み出し比較点の集合を使用して、第1不揮発性記憶要素の集合に対して読み出し処理を実行する工程と、
読み出し比較点の各々は、前記第1不揮発性記憶要素の2つの隣り合うデータ状態の間を区別するものであり、
前記読み出し処理は、読み出しデータの集合を提供し、
前記読み出しデータの集合が1つ以上の誤りを有するか否かを決定する工程と、
誤り訂正処理が前記1つ以上の誤りを訂正可能か否かを決定する工程と、
前記誤り訂正処理が前記1つ以上の誤りを訂正可能な場合には、前記誤り訂正処理を用いて前記1つ以上の誤りを訂正する工程と、
前記誤り訂正処理が前記1つ以上の誤りを訂正不可能な場合には、データ回復処理を実行する工程と、を備えており、
前記データ回復処理は、
前記第1不揮発性記憶要素の集合に隣接する第2不揮発性記憶要素のデータ状態を読み出しており、
前記第2不揮発性記憶要素の各々は、少なくとも4つのデータ状態のうちの1つにプログラムされており、
前記第1不揮発性記憶要素の集合の少なくとも一部のデータの読み出しに対して前記1つ以上の読み出し比較点を調整しており、
前記第1不揮発性記憶要素の集合内の特定の不揮発性記憶要素のデータの読み出しに対する1つ以上の読み出し比較点は、隣接する第2不揮発性記憶要素の各々のデータ状態に基づいて調整されており、
前記調整された1つ以上の読み出し比較点を用いて、前記第1不揮発性記憶要素の集合に対してデータを読み出す他の1つ以上の読み出し処理を実行する不揮発性記憶の読み出し方法。 - 前記第1不揮発性記憶要素の集合が、第1ワードラインに接続されており、
前記第2不揮発性記憶要素が、前記第1ワードラインに隣接する第2ワードラインに接続されており、
前記誤り訂正処理が、誤り訂正符号を使用する請求項1に記載の方法。 - 前記1つ以上の読み出し比較点の調整が、オフセット電圧を使用することによって基準電圧を変更する請求項1又は2に記載の方法。
- 前記1つ以上の読み出し比較点の調整が、1つのオフセット値又はオフセット値の集合を使用することによって基準電圧を変更しており、
オフセット値の集合は、プログラムされたデータ状態の各々に対するオフセット値を備えている請求項3に記載の方法。 - 他の1つ以上の読み出し処理を実行する工程は、複数の読み出し処理を実行する工程を備えており、
各々の読み出し処理は、所定のオフセット値の集合のうちの異なる1つを使用して前記第1不揮発性記憶要素の集合の全てに対して、各々のオフセット値を使用することにより少なくとも1回の読み出し処理を実行しており、
各々の第1不揮発性記憶要素は、各々の隣接する第2不揮発性記憶要素と関連している前記オフセット値に関連する読み出し処理の適切な1つから最終的なデータを提供している請求項1〜4のいずれか一項に記載の方法。 - 前記1つ以上の読み出し比較点を調整する工程及び他の1つ以上の読み出し処理を実行する工程が、
前記1つ以上の読み出し比較点を調整しないで第1読み出し処理を実行して、少なくとも4つのデータ状態のうちの第1データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する工程と、
前記1つ以上の読み出し比較点を第1調整した第2読み出し処理を実行して、少なくとも4つのデータ状態のうちの第2データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する工程と、を備えている請求項1〜5のいずれか一項に記載の方法。 - 前記1つ以上の読み出し比較点を調整する工程及び他の1つ以上の読み出し処理を実行する工程が、
前記1つ以上の読み出し比較点を調整しないで第1読み出し処理を実行して、少なくとも4つのデータ状態のうちの第1データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する工程と、
前記1つ以上の読み出し比較点を第1調整した第2読み出し処理を実行して、少なくとも4つのデータ状態のうちの第2データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する工程と、
前記1つ以上の読み出し比較点を第2調整した第3読み出し処理を実行して、少なくとも4つのデータ状態のうちの第3データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する工程と、
前記1つ以上の読み出し比較点を第3調整した第4読み出し処理を実行して、少なくとも4つのデータ状態のうちの第4データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する工程と、を備えている請求項1〜5のいずれか一項に記載の方法。 - 前記第1不揮発性記憶要素の集合が第1ワードラインに接続されており、
前記第2不揮発性記憶要素が前記第1ワードラインに隣接する第2ワードラインに接続されており、
前記第1ワードラインと第2ワードラインがN本のワードラインを備えたメモリシステムの一部であり、
N番目のワードラインは列の最後でプログラムされ、
前記N番目のワードラインを除く前記ワードラインの全てに対して、前記データ回復処理工程が実行される請求項1〜7のいずれか一項に記載の方法。 - 前記データ回復処理の結果を報告する工程を、さらに備えている請求項1〜8のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素の集合が、第1ワードラインに接続されているとともに連続するビットラインに接続されている請求項1〜9のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素の集合が第1ワードラインに接続されているとともに、ビットライングループ内のビットラインに1つおきに接続している請求項1〜9のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素がフラッシュメモリ素子である請求項1〜11のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素がNANDフラッシュメモリ素子である請求項1〜12のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素がマルチ状態フラッシュメモリ素子である請求項1〜13のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素がフローティングゲートを備えている請求項1〜14のいずれか一項に記載の方法。
- 前記第1不揮発性記憶要素が電荷を蓄積するための誘電体領域を備えている請求項1〜15のいずれか一項に記載の方法。
- 第1不揮発性記憶要素の集合と、少なくとも4つのデータ状態を記憶可能であるとともに前記第1不揮発性記憶要素の集合に隣接する第2不揮発性記憶要素と、不揮発性記憶要素と通信する1つ以上の管理回路を備えており、
前記1つ以上の管理回路は、
前記第1不揮発性記憶要素の集合に記憶されている読み出しデータの集合を決定するための基準値の集合を用いて、第1不揮発性記憶要素の集合に対して読み出し処理を実行し、
基準値の各々は、前記第1不揮発性記憶要素の2つの隣り合うデータ状態の間を区別するものであり、
前記読み出しデータが誤り訂正処理によって訂正不可能な1つ以上の誤りを有しており、前記誤り訂正処理が前記1つ以上の誤りを訂正不可能な場合はデータ回復処理を実行することを決定可能であり、
前記データ回復処理は、
前記第1不揮発性記憶要素の集合に隣接する第2不揮発性記憶要素のデータ状態を読み出す手段と、
前記基準値の少なくとも一部を調整する手段と、
前記第1不揮発性記憶要素の集合内の特定の不揮発性記憶要素を読み出すための基準値は、隣接する第2不揮発性記憶要素の各々のデータ状態に基づいて調整されており、
前記調整された基準値を用いて、前記第1不揮発性記憶要素の集合に対してデータを読み出す他の1つ以上の読み出し処理を実行する手段と、を備えている不揮発性メモリシステム。 - 前記基準値の調整手段及び他の1つ以上の読み出し処理の実行手段が、複数の読み出し処理の実行手段を備えており、
複数の読み出し処理手段は、
所定のオフセット値の集合の異なる1つを使用して前記第1不揮発性記憶要素の集合の全てに実行されており、
各々のオフセット値を使用して少なくとも1回の読み出し処理を実行しており、
前記第1不揮発性記憶要素の集合の少なくとも一部の集合の各々が、前記オフセット値と関連している読み出し処理の適切な1つから最終的なデータを提供しており、
前記オフセット値が、各々の隣接する第2不揮発性記憶要素と関連している請求項17に記載の不揮発性メモリシステム。 - 前記基準値の調整手段と及び他の1つ以上の読み出し処理の実行手段が、
前記基準値を調整しないで第1読み出し処理を実行して、少なくとも4つのデータ状態のうちの第1データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する手段と、
前記基準値を第1調整した第2読み出し処理を実行して、少なくとも4つのデータ状態のうちの第2データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する手段と、備えている請求項17又は18に記載の不揮発性メモリシステム。 - 前記基準値の調整手段及び他の1つ以上の読み出し処理の実行手段が、
前記基準値を調整しないで第1読み出し処理を実行して、少なくとも4つのデータ状態のうちの第1データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の前記不揮発性記憶要素の集合のための結果を記憶する手段と、
前記基準値を第1調整した第2読み出し処理を実行して、少なくとも4つのデータ状態のうちの第2データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する手段と、
前記基準値を第2調整した第3読み出し処理を実行して、少なくとも4つのデータ状態のうちの第3データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する手段と、
前記基準値を第3調整した第4読み出し処理を実行して、少なくとも4つのデータ状態のうちの第4データ状態である隣接する第2不揮発性記憶要素を備えている1つ以上の第1不揮発性記憶要素の結果を記憶する手段と、を備えている請求項17又は18に記載の不揮発性メモリシステム。 - 前記1つ以上の管理回路が、状態マシン、復号部、検出回路及び制御部の少なくとも1つ以上を備えており、
前記第1不揮発性記憶要素の集合は、不揮発性記憶要素のアレイの一部であるとともに、第1ワードラインに接続されており、
不揮発性記憶要素の前記アレイは、ワードラインとビットラインを備えており、
前記第2不揮発性記憶要素が、前記第1ワードラインに隣接する第2ワードラインに接続されている請求項17〜20のいずれか一項に記載の不揮発性メモリシステム。 - 前記第1不揮発性記憶要素が、NANDフラッシュメモリ素子である請求項17〜21のいずれか一項に記載の不揮発性メモリシステム。
- 前記第1不揮発性記憶要素が、マルチ状態フラッシュメモリ素子である請求項17〜22のいずれか一項記載の不揮発性メモリシステム。
- 前記第1不揮発性記憶要素が、フローティングゲートを備えている請求項17〜23のいずれか一項に記載の不揮発性メモリシステム。
- 前記第1不揮発性記憶要素が、電荷を蓄積するための誘電体領域を備えている請求項17〜24のいずれか一項に記載の不揮発性メモリシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/099,133 US7196928B2 (en) | 2005-04-05 | 2005-04-05 | Compensating for coupling during read operations of non-volatile memory |
PCT/US2006/011810 WO2006107729A1 (en) | 2005-04-05 | 2006-03-31 | Compensating for coupling during read operations of non-volatile-memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008536251A JP2008536251A (ja) | 2008-09-04 |
JP4665029B2 true JP4665029B2 (ja) | 2011-04-06 |
Family
ID=36648658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008505380A Expired - Fee Related JP4665029B2 (ja) | 2005-04-05 | 2006-03-31 | 不揮発性メモリの読み出し動作中の結合の補償 |
Country Status (7)
Country | Link |
---|---|
US (4) | US7196928B2 (ja) |
EP (1) | EP1866929B1 (ja) |
JP (1) | JP4665029B2 (ja) |
KR (1) | KR100934495B1 (ja) |
CN (1) | CN101194322B (ja) |
TW (1) | TWI300929B (ja) |
WO (1) | WO2006107729A1 (ja) |
Families Citing this family (515)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7206230B2 (en) * | 2005-04-01 | 2007-04-17 | Sandisk Corporation | Use of data latches in cache operations of non-volatile memories |
US7463521B2 (en) * | 2005-04-01 | 2008-12-09 | Sandisk Corporation | Method for non-volatile memory with managed execution of cached data |
US7187585B2 (en) * | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7196928B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
US7196946B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling in non-volatile storage |
US7394693B2 (en) * | 2005-08-31 | 2008-07-01 | Micron Technology, Inc. | Multiple select gate architecture |
US7301817B2 (en) | 2005-10-27 | 2007-11-27 | Sandisk Corporation | Method for programming of multi-state non-volatile memory using smart verify |
US7366022B2 (en) * | 2005-10-27 | 2008-04-29 | Sandisk Corporation | Apparatus for programming of multi-state non-volatile memory using smart verify |
US7355888B2 (en) * | 2005-12-19 | 2008-04-08 | Sandisk Corporation | Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages |
US7355889B2 (en) * | 2005-12-19 | 2008-04-08 | Sandisk Corporation | Method for programming non-volatile memory with reduced program disturb using modified pass voltages |
US7365018B2 (en) * | 2005-12-28 | 2008-04-29 | Sandisk Corporation | Fabrication of semiconductor device for flash memory with increased select gate width |
US7349260B2 (en) | 2005-12-29 | 2008-03-25 | Sandisk Corporation | Alternate row-based reading and writing for non-volatile memory |
US7443726B2 (en) * | 2005-12-29 | 2008-10-28 | Sandisk Corporation | Systems for alternate row-based reading and writing for non-volatile memory |
US7453723B2 (en) * | 2006-03-01 | 2008-11-18 | Micron Technology, Inc. | Memory with weighted multi-page read |
US7436733B2 (en) * | 2006-03-03 | 2008-10-14 | Sandisk Corporation | System for performing read operation on non-volatile storage with compensation for coupling |
DE602007011736D1 (de) | 2006-03-03 | 2011-02-17 | Sandisk Corp | Leseoperation für nichtflüchtige speicherung mit floating-gate-kopplungskompensation |
US7499319B2 (en) * | 2006-03-03 | 2009-03-03 | Sandisk Corporation | Read operation for non-volatile storage with compensation for coupling |
EP2016590B1 (en) * | 2006-05-05 | 2011-10-26 | SanDisk Corporation | Non-volatile memory with background data latch caching during read operations and methods therefor |
WO2007132452A2 (en) * | 2006-05-12 | 2007-11-22 | Anobit Technologies | Reducing programming error in memory devices |
US8239735B2 (en) | 2006-05-12 | 2012-08-07 | Apple Inc. | Memory Device with adaptive capacity |
KR101202537B1 (ko) | 2006-05-12 | 2012-11-19 | 애플 인크. | 메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩 |
CN103280239B (zh) | 2006-05-12 | 2016-04-06 | 苹果公司 | 存储设备中的失真估计和消除 |
US7440331B2 (en) * | 2006-06-01 | 2008-10-21 | Sandisk Corporation | Verify operation for non-volatile storage using different voltages |
WO2008097320A2 (en) * | 2006-06-01 | 2008-08-14 | Virginia Tech Intellectual Properties, Inc. | Premixing injector for gas turbine engines |
US7457163B2 (en) * | 2006-06-01 | 2008-11-25 | Sandisk Corporation | System for verifying non-volatile storage using different voltages |
US7310272B1 (en) * | 2006-06-02 | 2007-12-18 | Sandisk Corporation | System for performing data pattern sensitivity compensation using different voltage |
US7450421B2 (en) * | 2006-06-02 | 2008-11-11 | Sandisk Corporation | Data pattern sensitivity compensation using different voltage |
US7391650B2 (en) * | 2006-06-16 | 2008-06-24 | Sandisk Corporation | Method for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates |
US7342831B2 (en) * | 2006-06-16 | 2008-03-11 | Sandisk Corporation | System for operating non-volatile memory using temperature compensation of voltages of unselected word lines and select gates |
US7349261B2 (en) * | 2006-06-19 | 2008-03-25 | Sandisk Corporation | Method for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines |
US7492633B2 (en) * | 2006-06-19 | 2009-02-17 | Sandisk Corporation | System for increasing programming speed for non-volatile memory by applying counter-transitioning waveforms to word lines |
US7352628B2 (en) * | 2006-06-19 | 2008-04-01 | Sandisk Corporation | Systems for programming differently sized margins and sensing with compensations at select states for improved read operations in a non-volatile memory |
US7606084B2 (en) * | 2006-06-19 | 2009-10-20 | Sandisk Corporation | Programming differently sized margins and sensing with compensations at select states for improved read operations in non-volatile memory |
US7486561B2 (en) * | 2006-06-22 | 2009-02-03 | Sandisk Corporation | Method for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
US7489549B2 (en) * | 2006-06-22 | 2009-02-10 | Sandisk Corporation | System for non-real time reprogramming of non-volatile memory to achieve tighter distribution of threshold voltages |
US20070297247A1 (en) * | 2006-06-26 | 2007-12-27 | Gerrit Jan Hemink | Method for programming non-volatile memory using variable amplitude programming pulses |
US7443729B2 (en) * | 2006-07-20 | 2008-10-28 | Sandisk Corporation | System that compensates for coupling based on sensing a neighbor using coupling |
US7400535B2 (en) * | 2006-07-20 | 2008-07-15 | Sandisk Corporation | System that compensates for coupling during programming |
US7885119B2 (en) | 2006-07-20 | 2011-02-08 | Sandisk Corporation | Compensating for coupling during programming |
US7894269B2 (en) * | 2006-07-20 | 2011-02-22 | Sandisk Corporation | Nonvolatile memory and method for compensating during programming for perturbing charges of neighboring cells |
US7369434B2 (en) * | 2006-08-14 | 2008-05-06 | Micron Technology, Inc. | Flash memory with multi-bit read |
WO2008026203A2 (en) * | 2006-08-27 | 2008-03-06 | Anobit Technologies | Estimation of non-linear distortion in memory devices |
US7977186B2 (en) * | 2006-09-28 | 2011-07-12 | Sandisk Corporation | Providing local boosting control implant for non-volatile memory |
US7705387B2 (en) * | 2006-09-28 | 2010-04-27 | Sandisk Corporation | Non-volatile memory with local boosting control implant |
US7684247B2 (en) | 2006-09-29 | 2010-03-23 | Sandisk Corporation | Reverse reading in non-volatile memory with compensation for coupling |
US7447076B2 (en) | 2006-09-29 | 2008-11-04 | Sandisk Corporation | Systems for reverse reading in non-volatile memory with compensation for coupling |
US7586157B2 (en) * | 2006-10-17 | 2009-09-08 | Sandisk Corporation | Non-volatile memory with dual voltage select gate structure |
US7691710B2 (en) * | 2006-10-17 | 2010-04-06 | Sandisk Corporation | Fabricating non-volatile memory with dual voltage select gate structure |
US7616490B2 (en) * | 2006-10-17 | 2009-11-10 | Sandisk Corporation | Programming non-volatile memory with dual voltage select gate structure |
WO2008053472A2 (en) | 2006-10-30 | 2008-05-08 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
US7821826B2 (en) | 2006-10-30 | 2010-10-26 | Anobit Technologies, Ltd. | Memory cell readout using successive approximation |
US7440323B2 (en) * | 2006-11-02 | 2008-10-21 | Sandisk Corporation | Reducing program disturb in non-volatile memory using multiple boosting modes |
US7468911B2 (en) * | 2006-11-02 | 2008-12-23 | Sandisk Corporation | Non-volatile memory using multiple boosting modes for reduced program disturb |
US8059456B2 (en) * | 2006-11-07 | 2011-11-15 | Sandisk Il Ltd. | Programming a NAND flash memory with reduced program disturb |
US7508710B2 (en) * | 2006-11-13 | 2009-03-24 | Sandisk Corporation | Operating non-volatile memory with boost structures |
US7696035B2 (en) * | 2006-11-13 | 2010-04-13 | Sandisk Corporation | Method for fabricating non-volatile memory with boost structures |
US7508703B2 (en) * | 2006-11-13 | 2009-03-24 | Sandisk Corporation | Non-volatile memory with boost structures |
US7924648B2 (en) | 2006-11-28 | 2011-04-12 | Anobit Technologies Ltd. | Memory power and performance management |
WO2008068747A2 (en) | 2006-12-03 | 2008-06-12 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
US7623387B2 (en) * | 2006-12-12 | 2009-11-24 | Sandisk Corporation | Non-volatile storage with early source-side boosting for reducing program disturb |
US7623386B2 (en) * | 2006-12-12 | 2009-11-24 | Sandisk Corporation | Reducing program disturb in non-volatile storage using early source-side boosting |
US7900102B2 (en) * | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
US7593263B2 (en) * | 2006-12-17 | 2009-09-22 | Anobit Technologies Ltd. | Memory device with reduced reading latency |
US7570520B2 (en) * | 2006-12-27 | 2009-08-04 | Sandisk Corporation | Non-volatile storage system with initial programming voltage based on trial |
US7551482B2 (en) * | 2006-12-27 | 2009-06-23 | Sandisk Corporation | Method for programming with initial programming voltage based on trial |
US7616505B2 (en) * | 2006-12-28 | 2009-11-10 | Sandisk Corporation | Complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
US7616506B2 (en) * | 2006-12-28 | 2009-11-10 | Sandisk Corporation | Systems for complete word line look ahead with efficient data latch assignment in non-volatile memory read operations |
US7518923B2 (en) | 2006-12-29 | 2009-04-14 | Sandisk Corporation | Margined neighbor reading for non-volatile memory read operations including coupling compensation |
KR101100359B1 (ko) * | 2006-12-29 | 2011-12-30 | 샌디스크 코포레이션 | 인접 메모리 셀의 저장 상태를 고려하여 비휘발성 메모리 셀을 판독하는 방법 |
US7440324B2 (en) * | 2006-12-29 | 2008-10-21 | Sandisk Corporation | Apparatus with alternating read mode |
US7606070B2 (en) * | 2006-12-29 | 2009-10-20 | Sandisk Corporation | Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation |
US7495962B2 (en) * | 2006-12-29 | 2009-02-24 | Sandisk Corporation | Alternating read mode |
US7525843B2 (en) * | 2006-12-30 | 2009-04-28 | Sandisk Corporation | Non-volatile storage with adaptive body bias |
US7583539B2 (en) * | 2006-12-30 | 2009-09-01 | Sandisk Corporation | Non-volatile storage with bias for temperature compensation |
US7554853B2 (en) * | 2006-12-30 | 2009-06-30 | Sandisk Corporation | Non-volatile storage with bias based on selective word line |
US7468920B2 (en) | 2006-12-30 | 2008-12-23 | Sandisk Corporation | Applying adaptive body bias to non-volatile storage |
US7468919B2 (en) * | 2006-12-30 | 2008-12-23 | Sandisk Corporation | Biasing non-volatile storage based on selected word line |
US7583535B2 (en) * | 2006-12-30 | 2009-09-01 | Sandisk Corporation | Biasing non-volatile storage to compensate for temperature variations |
US7751240B2 (en) * | 2007-01-24 | 2010-07-06 | Anobit Technologies Ltd. | Memory device with negative thresholds |
US8151166B2 (en) | 2007-01-24 | 2012-04-03 | Anobit Technologies Ltd. | Reduction of back pattern dependency effects in memory devices |
US7679965B2 (en) * | 2007-01-31 | 2010-03-16 | Sandisk Il Ltd | Flash memory with improved programming precision |
CN102005244B (zh) | 2007-02-20 | 2015-10-21 | 桑迪士克科技公司 | 非易失性存储的可变编程 |
US7616500B2 (en) * | 2007-02-20 | 2009-11-10 | Sandisk Corporation | Non-volatile storage apparatus with multiple pass write sequence |
KR100865830B1 (ko) * | 2007-02-22 | 2008-10-28 | 주식회사 하이닉스반도체 | 메모리 소자의 독출 방법 |
CN101715595A (zh) | 2007-03-12 | 2010-05-26 | 爱诺彼得技术有限责任公司 | 存储器单元读取阈的自适应估计 |
US7797480B2 (en) * | 2007-03-29 | 2010-09-14 | Sandisk Corporation | Method for reading non-volatile storage using pre-conditioning waveforms and modified reliability metrics |
US7904793B2 (en) * | 2007-03-29 | 2011-03-08 | Sandisk Corporation | Method for decoding data in non-volatile storage using reliability metrics based on multiple reads |
WO2008121553A1 (en) * | 2007-03-29 | 2008-10-09 | Sandisk Corporation | Non-volatile storage with decoding of data using reliability metrics based on multiple reads |
US7539060B2 (en) * | 2007-04-05 | 2009-05-26 | Sandisk Corporation | Non-volatile storage using current sensing with biasing of source and P-Well |
US7606076B2 (en) * | 2007-04-05 | 2009-10-20 | Sandisk Corporation | Sensing in non-volatile storage using pulldown to regulated source voltage to remove system noise |
US8001320B2 (en) | 2007-04-22 | 2011-08-16 | Anobit Technologies Ltd. | Command interface for memory devices |
US7606071B2 (en) * | 2007-04-24 | 2009-10-20 | Sandisk Corporation | Compensating source voltage drop in non-volatile storage |
US7606072B2 (en) * | 2007-04-24 | 2009-10-20 | Sandisk Corporation | Non-volatile storage with compensation for source voltage drop |
US7440327B1 (en) | 2007-04-25 | 2008-10-21 | Sandisk Corporation | Non-volatile storage with reduced power consumption during read operations |
US7606079B2 (en) * | 2007-04-25 | 2009-10-20 | Sandisk Corporation | Reducing power consumption during read operations in non-volatile storage |
US7460404B1 (en) * | 2007-05-07 | 2008-12-02 | Sandisk Corporation | Boosting for non-volatile storage using channel isolation switching |
US7463522B2 (en) * | 2007-05-07 | 2008-12-09 | Sandisk Corporation | Non-volatile storage with boosting using channel isolation switching |
US7577026B2 (en) * | 2007-05-07 | 2009-08-18 | Sandisk Corporation | Source and drain side early boosting using local self boosting for non-volatile storage |
US8234545B2 (en) | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
US8429493B2 (en) | 2007-05-12 | 2013-04-23 | Apple Inc. | Memory device with internal signap processing unit |
US8073648B2 (en) * | 2007-05-14 | 2011-12-06 | Sandisk Il Ltd. | Measuring threshold voltage distribution in memory using an aggregate characteristic |
US7545678B2 (en) * | 2007-06-29 | 2009-06-09 | Sandisk Corporation | Non-volatile storage with source bias all bit line sensing |
CN101796590B (zh) * | 2007-06-29 | 2013-01-30 | 桑迪士克科技股份有限公司 | 具有源极偏压全位线感测的非易失性存储器 |
US7471567B1 (en) | 2007-06-29 | 2008-12-30 | Sandisk Corporation | Method for source bias all bit line sensing in non-volatile storage |
KR101411976B1 (ko) * | 2007-07-09 | 2014-06-27 | 삼성전자주식회사 | 플래시 메모리 시스템 및 그것의 에러 정정 방법 |
US7925936B1 (en) | 2007-07-13 | 2011-04-12 | Anobit Technologies Ltd. | Memory device with non-uniform programming levels |
US8259497B2 (en) | 2007-08-06 | 2012-09-04 | Apple Inc. | Programming schemes for multi-level analog memory cells |
KR101425958B1 (ko) * | 2007-09-06 | 2014-08-04 | 삼성전자주식회사 | 멀티-비트 데이터를 저장하는 메모리 시스템 및 그것의읽기 방법 |
US7652929B2 (en) * | 2007-09-17 | 2010-01-26 | Sandisk Corporation | Non-volatile memory and method for biasing adjacent word line for verify during programming |
US8174905B2 (en) | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
US8650352B2 (en) | 2007-09-20 | 2014-02-11 | Densbits Technologies Ltd. | Systems and methods for determining logical values of coupled flash memory cells |
US8365040B2 (en) | 2007-09-20 | 2013-01-29 | Densbits Technologies Ltd. | Systems and methods for handling immediate data errors in flash memory |
US7551477B2 (en) * | 2007-09-26 | 2009-06-23 | Sandisk Corporation | Multiple bit line voltages based on distance |
US7577034B2 (en) * | 2007-09-26 | 2009-08-18 | Sandisk Corporation | Reducing programming voltage differential nonlinearity in non-volatile storage |
US7773413B2 (en) | 2007-10-08 | 2010-08-10 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells in the presence of temperature variations |
US8068360B2 (en) | 2007-10-19 | 2011-11-29 | Anobit Technologies Ltd. | Reading analog memory cells using built-in multi-threshold commands |
US8527819B2 (en) | 2007-10-19 | 2013-09-03 | Apple Inc. | Data storage in analog memory cell arrays having erase failures |
US8000141B1 (en) | 2007-10-19 | 2011-08-16 | Anobit Technologies Ltd. | Compensation for voltage drifts in analog memory cells |
US8694715B2 (en) | 2007-10-22 | 2014-04-08 | Densbits Technologies Ltd. | Methods for adaptively programming flash memory devices and flash memory systems incorporating same |
US8443242B2 (en) | 2007-10-25 | 2013-05-14 | Densbits Technologies Ltd. | Systems and methods for multiple coding rates in flash devices |
KR101509836B1 (ko) | 2007-11-13 | 2015-04-06 | 애플 인크. | 멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택 |
US7613045B2 (en) * | 2007-11-26 | 2009-11-03 | Sandisk Il, Ltd. | Operation sequence and commands for measuring threshold voltage distribution in memory |
US8225181B2 (en) | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
US8335977B2 (en) | 2007-12-05 | 2012-12-18 | Densbits Technologies Ltd. | Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells |
WO2009072102A2 (en) | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | System and methods employing mock thresholds to generate actual reading thresholds in flash memory devices |
WO2009072105A2 (en) | 2007-12-05 | 2009-06-11 | Densbits Technologies Ltd. | A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications |
US7688638B2 (en) * | 2007-12-07 | 2010-03-30 | Sandisk Corporation | Faster programming of multi-level non-volatile storage through reduced verify operations |
WO2009074978A2 (en) | 2007-12-12 | 2009-06-18 | Densbits Technologies Ltd. | Systems and methods for error correction and decoding on multi-level physical media |
US8276051B2 (en) | 2007-12-12 | 2012-09-25 | Densbits Technologies Ltd. | Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications |
US8209588B2 (en) | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
US8327246B2 (en) | 2007-12-18 | 2012-12-04 | Densbits Technologies Ltd. | Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith |
US8085586B2 (en) | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
US8156398B2 (en) | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
KR101466698B1 (ko) * | 2008-02-19 | 2014-11-28 | 삼성전자주식회사 | 메모리 장치 및 메모리 데이터 읽기 방법 |
US7924587B2 (en) | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
JP2009199675A (ja) * | 2008-02-22 | 2009-09-03 | Seiko Instruments Inc | 不揮発性半導体記憶装置 |
US7864573B2 (en) | 2008-02-24 | 2011-01-04 | Anobit Technologies Ltd. | Programming analog memory cells for reduced variance after retention |
US8230300B2 (en) | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
US8059457B2 (en) | 2008-03-18 | 2011-11-15 | Anobit Technologies Ltd. | Memory device with multiple-accuracy read commands |
US20090238002A1 (en) * | 2008-03-24 | 2009-09-24 | Powerchip Semiconductor Corp. | Nand type non-volatile memory and operating method thereof |
WO2009118720A2 (en) | 2008-03-25 | 2009-10-01 | Densbits Technologies Ltd. | Apparatus and methods for hardware-efficient unbiased rounding |
US7915664B2 (en) * | 2008-04-17 | 2011-03-29 | Sandisk Corporation | Non-volatile memory with sidewall channels and raised source/drain regions |
US8051240B2 (en) * | 2008-05-09 | 2011-11-01 | Sandisk Technologies Inc. | Compensating non-volatile storage using different pass voltages during program-verify and read |
US7719902B2 (en) * | 2008-05-23 | 2010-05-18 | Sandisk Corporation | Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage |
US7848144B2 (en) | 2008-06-16 | 2010-12-07 | Sandisk Corporation | Reverse order page writing in flash memories |
US7800956B2 (en) * | 2008-06-27 | 2010-09-21 | Sandisk Corporation | Programming algorithm to reduce disturb with minimal extra time penalty |
US7808831B2 (en) * | 2008-06-30 | 2010-10-05 | Sandisk Corporation | Read disturb mitigation in non-volatile memory |
US7995388B1 (en) | 2008-08-05 | 2011-08-09 | Anobit Technologies Ltd. | Data storage using modified voltages |
US7924613B1 (en) | 2008-08-05 | 2011-04-12 | Anobit Technologies Ltd. | Data storage in analog memory cells with protection against programming interruption |
US7876611B2 (en) * | 2008-08-08 | 2011-01-25 | Sandisk Corporation | Compensating for coupling during read operations in non-volatile storage |
US8332725B2 (en) | 2008-08-20 | 2012-12-11 | Densbits Technologies Ltd. | Reprogramming non volatile memory portions |
US8169825B1 (en) | 2008-09-02 | 2012-05-01 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells subjected to long retention periods |
US8949684B1 (en) | 2008-09-02 | 2015-02-03 | Apple Inc. | Segmented data storage |
US8130552B2 (en) * | 2008-09-11 | 2012-03-06 | Sandisk Technologies Inc. | Multi-pass programming for memory with reduced data storage requirement |
US8000135B1 (en) | 2008-09-14 | 2011-08-16 | Anobit Technologies Ltd. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
EP2335245B1 (en) * | 2008-09-28 | 2015-01-07 | Ramot at Tel-Aviv University Ltd. | Method and system for adaptive coding in flash memories |
US8671327B2 (en) | 2008-09-28 | 2014-03-11 | Sandisk Technologies Inc. | Method and system for adaptive coding in flash memories |
US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
US7839687B2 (en) * | 2008-10-16 | 2010-11-23 | Sandisk Corporation | Multi-pass programming for memory using word line coupling |
US8713330B1 (en) | 2008-10-30 | 2014-04-29 | Apple Inc. | Data scrambling in memory devices |
US8208304B2 (en) | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
US7813181B2 (en) | 2008-12-31 | 2010-10-12 | Sandisk Corporation | Non-volatile memory and method for sensing with pipelined corrections for neighboring perturbations |
US7944754B2 (en) * | 2008-12-31 | 2011-05-17 | Sandisk Corporation | Non-volatile memory and method with continuous scanning time-domain sensing |
US8248831B2 (en) | 2008-12-31 | 2012-08-21 | Apple Inc. | Rejuvenation of analog memory cells |
US8397131B1 (en) | 2008-12-31 | 2013-03-12 | Apple Inc. | Efficient readout schemes for analog memory cell devices |
US7974133B2 (en) | 2009-01-06 | 2011-07-05 | Sandisk Technologies Inc. | Robust sensing circuit and method |
US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
US7940571B2 (en) * | 2009-02-26 | 2011-05-10 | Macronix International Co., Ltd. | Memory apparatus and method thereof for operating memory |
US8228701B2 (en) | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
KR101552210B1 (ko) * | 2009-03-10 | 2015-09-10 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 읽기 방법 |
US8832354B2 (en) | 2009-03-25 | 2014-09-09 | Apple Inc. | Use of host system resources by memory controller |
US8259506B1 (en) | 2009-03-25 | 2012-09-04 | Apple Inc. | Database of memory read thresholds |
US8026544B2 (en) | 2009-03-30 | 2011-09-27 | Sandisk Technologies Inc. | Fabricating and operating a memory array having a multi-level cell region and a single-level cell region |
US8819385B2 (en) | 2009-04-06 | 2014-08-26 | Densbits Technologies Ltd. | Device and method for managing a flash memory |
US8458574B2 (en) | 2009-04-06 | 2013-06-04 | Densbits Technologies Ltd. | Compact chien-search based decoding apparatus and method |
US7907449B2 (en) | 2009-04-09 | 2011-03-15 | Sandisk Corporation | Two pass erase for non-volatile storage |
US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
US8413016B2 (en) * | 2009-04-28 | 2013-04-02 | Panasonic Corporation | Nonvolatile memory device and controller for judging a normal or anomalous condition of an error-corrected bit pattern |
US8566510B2 (en) | 2009-05-12 | 2013-10-22 | Densbits Technologies Ltd. | Systems and method for flash memory management |
US8054691B2 (en) | 2009-06-26 | 2011-11-08 | Sandisk Technologies Inc. | Detecting the completion of programming for non-volatile storage |
US8479080B1 (en) | 2009-07-12 | 2013-07-02 | Apple Inc. | Adaptive over-provisioning in memory systems |
US8383479B2 (en) | 2009-07-21 | 2013-02-26 | Sandisk Technologies Inc. | Integrated nanostructure-based non-volatile memory fabrication |
US8134871B2 (en) * | 2009-08-05 | 2012-03-13 | Sandisk Technologies Inc. | Programming memory with reduced pass voltage disturb and floating gate-to-control gate leakage |
US8144511B2 (en) | 2009-08-19 | 2012-03-27 | Sandisk Technologies Inc. | Selective memory cell program and erase |
US8995197B1 (en) | 2009-08-26 | 2015-03-31 | Densbits Technologies Ltd. | System and methods for dynamic erase and program control for flash memory device memories |
US8868821B2 (en) | 2009-08-26 | 2014-10-21 | Densbits Technologies Ltd. | Systems and methods for pre-equalization and code design for a flash memory |
US8305812B2 (en) | 2009-08-26 | 2012-11-06 | Densbits Technologies Ltd. | Flash memory module and method for programming a page of flash memory cells |
US9330767B1 (en) | 2009-08-26 | 2016-05-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory module and method for programming a page of flash memory cells |
US8400854B2 (en) | 2009-09-11 | 2013-03-19 | Sandisk Technologies Inc. | Identifying at-risk data in non-volatile storage |
US8730729B2 (en) | 2009-10-15 | 2014-05-20 | Densbits Technologies Ltd. | Systems and methods for averaging error rates in non-volatile devices and storage systems |
US8495465B1 (en) | 2009-10-15 | 2013-07-23 | Apple Inc. | Error correction coding over multiple memory pages |
US8724387B2 (en) | 2009-10-22 | 2014-05-13 | Densbits Technologies Ltd. | Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages |
KR101893332B1 (ko) * | 2009-11-13 | 2018-08-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 구동 방법 |
US8626988B2 (en) | 2009-11-19 | 2014-01-07 | Densbits Technologies Ltd. | System and method for uncoded bit error rate equalization via interleaving |
US8473809B2 (en) | 2009-11-20 | 2013-06-25 | Sandisk Technologies Inc. | Data coding for improved ECC efficiency |
KR101803254B1 (ko) * | 2009-11-27 | 2017-11-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
US8174895B2 (en) | 2009-12-15 | 2012-05-08 | Sandisk Technologies Inc. | Programming non-volatile storage with fast bit detection and verify skip |
US8677054B1 (en) | 2009-12-16 | 2014-03-18 | Apple Inc. | Memory management schemes for non-volatile memory devices |
US9037777B2 (en) | 2009-12-22 | 2015-05-19 | Densbits Technologies Ltd. | Device, system, and method for reducing program/read disturb in flash arrays |
US8607124B2 (en) | 2009-12-24 | 2013-12-10 | Densbits Technologies Ltd. | System and method for setting a flash memory cell read threshold |
US8694814B1 (en) | 2010-01-10 | 2014-04-08 | Apple Inc. | Reuse of host hibernation storage space by memory controller |
US8677203B1 (en) | 2010-01-11 | 2014-03-18 | Apple Inc. | Redundant data storage schemes for multi-die memory systems |
US8416609B2 (en) | 2010-02-15 | 2013-04-09 | Micron Technology, Inc. | Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, methods of writing to and reading from a memory cell, and computer systems |
US8213255B2 (en) | 2010-02-19 | 2012-07-03 | Sandisk Technologies Inc. | Non-volatile storage with temperature compensation based on neighbor state information |
US8700970B2 (en) | 2010-02-28 | 2014-04-15 | Densbits Technologies Ltd. | System and method for multi-dimensional decoding |
KR101710663B1 (ko) | 2010-03-02 | 2017-02-28 | 삼성전자주식회사 | 메모리 시스템 및 그것의 동작 방법 |
US9595341B2 (en) | 2010-03-02 | 2017-03-14 | Samsung Electronics Co., Ltd. | Memory system to determine interference of a memory cell by adjacent memory cells, and operating method thereof |
US8233324B2 (en) | 2010-03-25 | 2012-07-31 | Sandisk Il Ltd. | Simultaneous multi-state read or verify in non-volatile storage |
US8516274B2 (en) | 2010-04-06 | 2013-08-20 | Densbits Technologies Ltd. | Method, system and medium for analog encryption in a flash memory |
US8527840B2 (en) | 2010-04-06 | 2013-09-03 | Densbits Technologies Ltd. | System and method for restoring damaged data programmed on a flash device |
US8745317B2 (en) | 2010-04-07 | 2014-06-03 | Densbits Technologies Ltd. | System and method for storing information in a multi-level cell memory |
US8218366B2 (en) | 2010-04-18 | 2012-07-10 | Sandisk Technologies Inc. | Programming non-volatile storage including reducing impact from other memory cells |
US9021177B2 (en) | 2010-04-29 | 2015-04-28 | Densbits Technologies Ltd. | System and method for allocating and using spare blocks in a flash memory |
US8208310B2 (en) | 2010-05-04 | 2012-06-26 | Sandisk Technologies Inc. | Mitigating channel coupling effects during sensing of non-volatile storage elements |
US8694853B1 (en) | 2010-05-04 | 2014-04-08 | Apple Inc. | Read commands for reading interfering memory cells |
KR101662277B1 (ko) * | 2010-05-12 | 2016-10-05 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 프로그램 방법 |
US8274831B2 (en) | 2010-05-24 | 2012-09-25 | Sandisk Technologies Inc. | Programming non-volatile storage with synchronized coupling |
US8546239B2 (en) | 2010-06-11 | 2013-10-01 | Sandisk Technologies Inc. | Methods of fabricating non-volatile memory with air gaps |
US8603890B2 (en) | 2010-06-19 | 2013-12-10 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory |
US8946048B2 (en) | 2010-06-19 | 2015-02-03 | Sandisk Technologies Inc. | Method of fabricating non-volatile memory with flat cell structures and air gap isolation |
US8572423B1 (en) | 2010-06-22 | 2013-10-29 | Apple Inc. | Reducing peak current in memory systems |
US8539311B2 (en) | 2010-07-01 | 2013-09-17 | Densbits Technologies Ltd. | System and method for data recovery in multi-level cell memories |
US8468431B2 (en) | 2010-07-01 | 2013-06-18 | Densbits Technologies Ltd. | System and method for multi-dimensional encoding and decoding |
US8467249B2 (en) | 2010-07-06 | 2013-06-18 | Densbits Technologies Ltd. | Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system |
US8595591B1 (en) | 2010-07-11 | 2013-11-26 | Apple Inc. | Interference-aware assignment of programming levels in analog memory cells |
US8369156B2 (en) | 2010-07-13 | 2013-02-05 | Sandisk Technologies Inc. | Fast random access to non-volatile storage |
US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
US8767459B1 (en) | 2010-07-31 | 2014-07-01 | Apple Inc. | Data storage in analog memory cells across word lines using a non-integer number of bits per cell |
US8856475B1 (en) | 2010-08-01 | 2014-10-07 | Apple Inc. | Efficient selection of memory blocks for compaction |
US8694854B1 (en) | 2010-08-17 | 2014-04-08 | Apple Inc. | Read threshold setting based on soft readout statistics |
US8964464B2 (en) | 2010-08-24 | 2015-02-24 | Densbits Technologies Ltd. | System and method for accelerated sampling |
TWI455289B (zh) * | 2010-08-27 | 2014-10-01 | Macronix Int Co Ltd | 記憶胞、記憶裝置及記憶胞的製造方法 |
US8476694B2 (en) * | 2010-09-08 | 2013-07-02 | Macronix International Co., Ltd | Memory cell, memory device and method for manufacturing memory cell |
US8508995B2 (en) | 2010-09-15 | 2013-08-13 | Densbits Technologies Ltd. | System and method for adjusting read voltage thresholds in memories |
US9021181B1 (en) | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
US9063878B2 (en) | 2010-11-03 | 2015-06-23 | Densbits Technologies Ltd. | Method, system and computer readable medium for copy back |
US8520441B2 (en) | 2010-11-16 | 2013-08-27 | Sandisk Technologies Inc. | Word line kicking when sensing non-volatile storage |
KR101774471B1 (ko) | 2010-11-25 | 2017-09-05 | 삼성전자주식회사 | 불 휘발성 메모리 장치 및 그것의 읽기 방법 |
US8850100B2 (en) | 2010-12-07 | 2014-09-30 | Densbits Technologies Ltd. | Interleaving codeword portions between multiple planes and/or dies of a flash memory device |
US8472280B2 (en) | 2010-12-21 | 2013-06-25 | Sandisk Technologies Inc. | Alternate page by page programming scheme |
US8778749B2 (en) | 2011-01-12 | 2014-07-15 | Sandisk Technologies Inc. | Air isolation in high density non-volatile memory |
US10079068B2 (en) | 2011-02-23 | 2018-09-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Devices and method for wear estimation based memory management |
US8482955B2 (en) * | 2011-02-25 | 2013-07-09 | Micron Technology, Inc. | Resistive memory sensing methods and devices |
US20120228691A1 (en) | 2011-03-08 | 2012-09-13 | Mohan Dunga | Pn floating gate non-volatile storage element |
US8693258B2 (en) | 2011-03-17 | 2014-04-08 | Densbits Technologies Ltd. | Obtaining soft information using a hard interface |
US8472246B2 (en) * | 2011-03-21 | 2013-06-25 | Skymedi Corporation | Method of programming a multi-bit per cell non-volatile memory |
US8503229B2 (en) | 2011-03-22 | 2013-08-06 | Sandisk Technologies Inc. | P-/Metal floating gate non-volatile storage element |
US8472266B2 (en) | 2011-03-31 | 2013-06-25 | Sandisk Technologies Inc. | Reducing neighbor read disturb |
US8990665B1 (en) | 2011-04-06 | 2015-03-24 | Densbits Technologies Ltd. | System, method and computer program product for joint search of a read threshold and soft decoding |
US8395936B2 (en) | 2011-05-09 | 2013-03-12 | Sandisk Technologies Inc. | Using channel-to-channel coupling to compensate floating gate-to-floating gate coupling in programming of non-volatile memory |
US8996790B1 (en) | 2011-05-12 | 2015-03-31 | Densbits Technologies Ltd. | System and method for flash memory management |
US9501392B1 (en) | 2011-05-12 | 2016-11-22 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of a non-volatile memory module |
US9195592B1 (en) | 2011-05-12 | 2015-11-24 | Densbits Technologies Ltd. | Advanced management of a non-volatile memory |
US9372792B1 (en) | 2011-05-12 | 2016-06-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US9110785B1 (en) | 2011-05-12 | 2015-08-18 | Densbits Technologies Ltd. | Ordered merge of data sectors that belong to memory space portions |
US9396106B2 (en) | 2011-05-12 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Advanced management of a non-volatile memory |
US8667211B2 (en) | 2011-06-01 | 2014-03-04 | Densbits Technologies Ltd. | System and method for managing a non-volatile memory |
US8456911B2 (en) | 2011-06-07 | 2013-06-04 | Sandisk Technologies Inc. | Intelligent shifting of read pass voltages for non-volatile storage |
US8588003B1 (en) | 2011-08-01 | 2013-11-19 | Densbits Technologies Ltd. | System, method and computer program product for programming and for recovering from a power failure |
US8743615B2 (en) | 2011-08-22 | 2014-06-03 | Sandisk Technologies Inc. | Read compensation for partially programmed blocks of non-volatile storage |
US9030870B2 (en) | 2011-08-26 | 2015-05-12 | Micron Technology, Inc. | Threshold voltage compensation in a multilevel memory |
US9076547B2 (en) | 2012-04-05 | 2015-07-07 | Micron Technology, Inc. | Level compensation in multilevel memory |
KR101913291B1 (ko) | 2011-09-09 | 2018-12-28 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그 데이터 판독 방법 및 기록 매체 |
US8638606B2 (en) | 2011-09-16 | 2014-01-28 | Sandisk Technologies Inc. | Substrate bias during program of non-volatile storage |
US9361986B2 (en) | 2011-09-19 | 2016-06-07 | Sandisk Technologies Inc. | High endurance non-volatile storage |
US8553468B2 (en) | 2011-09-21 | 2013-10-08 | Densbits Technologies Ltd. | System and method for managing erase operations in a non-volatile memory |
US8406053B1 (en) | 2011-09-21 | 2013-03-26 | Sandisk Technologies Inc. | On chip dynamic read for non-volatile storage |
US8917554B2 (en) | 2011-10-26 | 2014-12-23 | Sandisk Technologies Inc. | Back-biasing word line switch transistors |
US8891297B2 (en) | 2011-11-01 | 2014-11-18 | Micron Technology, Inc. | Memory cell sensing |
EP2780912B1 (en) | 2011-11-18 | 2016-10-26 | SanDisk Technologies LLC | Non-volatile storage with data recovery |
US9036415B2 (en) | 2011-12-21 | 2015-05-19 | Sandisk Technologies Inc. | Mitigating variations arising from simultaneous multi-state sensing |
US8996788B2 (en) | 2012-02-09 | 2015-03-31 | Densbits Technologies Ltd. | Configurable flash interface |
US8947941B2 (en) | 2012-02-09 | 2015-02-03 | Densbits Technologies Ltd. | State responsive operations relating to flash memory cells |
US8582381B2 (en) | 2012-02-23 | 2013-11-12 | SanDisk Technologies, Inc. | Temperature based compensation during verify operations for non-volatile storage |
US9299455B2 (en) | 2012-03-06 | 2016-03-29 | Hitachi, Ltd. | Semiconductor storage device having nonvolatile semiconductor memory |
US8937835B2 (en) | 2012-03-13 | 2015-01-20 | Sandisk Technologies Inc. | Non-volatile storage with read process that reduces disturb |
US8804430B2 (en) | 2012-03-26 | 2014-08-12 | Sandisk Technologies Inc. | Selected word line dependent select gate diffusion region voltage during programming |
US8638608B2 (en) | 2012-03-26 | 2014-01-28 | Sandisk Technologies Inc. | Selected word line dependent select gate voltage during program |
US8804425B2 (en) | 2012-03-26 | 2014-08-12 | Sandisk Technologies Inc. | Selected word line dependent programming voltage |
US11024352B2 (en) | 2012-04-10 | 2021-06-01 | Samsung Electronics Co., Ltd. | Memory system for access concentration decrease management and access concentration decrease method |
US9171627B2 (en) | 2012-04-11 | 2015-10-27 | Aplus Flash Technology, Inc. | Non-boosting program inhibit scheme in NAND design |
US9087595B2 (en) | 2012-04-20 | 2015-07-21 | Aplus Flash Technology, Inc. | Shielding 2-cycle half-page read and program schemes for advanced NAND flash design |
US8996793B1 (en) | 2012-04-24 | 2015-03-31 | Densbits Technologies Ltd. | System, method and computer readable medium for generating soft information |
US8937837B2 (en) | 2012-05-08 | 2015-01-20 | Sandisk Technologies Inc. | Bit line BL isolation scheme during erase operation for non-volatile storage |
US8838937B1 (en) | 2012-05-23 | 2014-09-16 | Densbits Technologies Ltd. | Methods, systems and computer readable medium for writing and reading data |
US8879325B1 (en) | 2012-05-30 | 2014-11-04 | Densbits Technologies Ltd. | System, method and computer program product for processing read threshold information and for reading a flash memory module |
US9001577B2 (en) | 2012-06-01 | 2015-04-07 | Micron Technology, Inc. | Memory cell sensing |
US9142305B2 (en) | 2012-06-28 | 2015-09-22 | Sandisk Technologies Inc. | System to reduce stress on word line select transistor during erase operation |
US9053819B2 (en) | 2012-07-11 | 2015-06-09 | Sandisk Technologies Inc. | Programming method to tighten threshold voltage width with avoiding program disturb |
US9921954B1 (en) | 2012-08-27 | 2018-03-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for split flash memory management between host and storage controller |
US9036417B2 (en) | 2012-09-06 | 2015-05-19 | Sandisk Technologies Inc. | On chip dynamic read level scan and error detection for nonvolatile storage |
US20140071761A1 (en) | 2012-09-10 | 2014-03-13 | Sandisk Technologies Inc. | Non-volatile storage with joint hard bit and soft bit reading |
US20140108705A1 (en) | 2012-10-12 | 2014-04-17 | Sandisk Technologies Inc. | Use of High Endurance Non-Volatile Memory for Read Acceleration |
KR102005709B1 (ko) | 2012-10-22 | 2019-08-01 | 삼성전자 주식회사 | 메모리 장치 구동 방법 및 메모리 시스템 |
US9159406B2 (en) | 2012-11-02 | 2015-10-13 | Sandisk Technologies Inc. | Single-level cell endurance improvement with pre-defined blocks |
US9368225B1 (en) | 2012-11-21 | 2016-06-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Determining read thresholds based upon read error direction statistics |
US9087601B2 (en) | 2012-12-06 | 2015-07-21 | Sandisk Technologies Inc. | Select gate bias during program of non-volatile storage |
US9123577B2 (en) | 2012-12-12 | 2015-09-01 | Sandisk Technologies Inc. | Air gap isolation in non-volatile memory using sacrificial films |
US9437273B2 (en) | 2012-12-26 | 2016-09-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9069659B1 (en) | 2013-01-03 | 2015-06-30 | Densbits Technologies Ltd. | Read threshold determination using reference read threshold |
US9076545B2 (en) | 2013-01-17 | 2015-07-07 | Sandisk Tecnologies Inc. | Dynamic adjustment of read voltage levels based on memory cell threshold voltage distribution |
US8913428B2 (en) | 2013-01-25 | 2014-12-16 | Sandisk Technologies Inc. | Programming non-volatile storage system with multiple memory die |
US9026757B2 (en) | 2013-01-25 | 2015-05-05 | Sandisk Technologies Inc. | Non-volatile memory programming data preservation |
US8885416B2 (en) | 2013-01-30 | 2014-11-11 | Sandisk Technologies Inc. | Bit line current trip point modulation for reading nonvolatile storage elements |
US8971128B2 (en) | 2013-01-31 | 2015-03-03 | Sandisk Technologies Inc. | Adaptive initial program voltage for non-volatile memory |
WO2014124324A1 (en) | 2013-02-08 | 2014-08-14 | Sandisk Technologies Inc. | Non-volatile memory including bit line switch transistors formed in a triple-well |
WO2014137928A2 (en) | 2013-03-04 | 2014-09-12 | Sandisk Technologies Inc. | Dynamic erase depth for improved endurance of non-volatile memory |
US9158667B2 (en) | 2013-03-04 | 2015-10-13 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9349452B2 (en) | 2013-03-07 | 2016-05-24 | Sandisk Technologies Inc. | Hybrid non-volatile memory cells for shared bit line |
US9165656B2 (en) | 2013-03-11 | 2015-10-20 | Sandisk Technologies Inc. | Non-volatile storage with shared bit lines and flat memory cells |
US9117530B2 (en) | 2013-03-14 | 2015-08-25 | Sandisk Technologies Inc. | Preserving data from adjacent word lines while programming binary non-volatile storage elements |
US8988947B2 (en) | 2013-03-25 | 2015-03-24 | Sandisk Technologies Inc. | Back bias during program verify of non-volatile storage |
TWI511156B (zh) * | 2013-05-13 | 2015-12-01 | Winbond Electronics Corp | 參考記憶胞的偏壓產生器及偏壓提供方法 |
US9183940B2 (en) | 2013-05-21 | 2015-11-10 | Aplus Flash Technology, Inc. | Low disturbance, power-consumption, and latency in NAND read and program-verify operations |
US9224746B2 (en) | 2013-05-21 | 2015-12-29 | Sandisk Technologies Inc. | Inverted-T word line and formation for non-volatile storage |
US9136876B1 (en) | 2013-06-13 | 2015-09-15 | Densbits Technologies Ltd. | Size limited multi-dimensional decoding |
US9263137B2 (en) | 2013-06-27 | 2016-02-16 | Aplus Flash Technology, Inc. | NAND array architecture for multiple simutaneous program and read |
WO2015013689A2 (en) | 2013-07-25 | 2015-01-29 | Aplus Flash Technology, Inc. | Nand array hiarchical bl structures for multiple-wl and all -bl simultaneous erase, erase-verify, program, program-verify, and read operations |
US8964496B2 (en) | 2013-07-26 | 2015-02-24 | Micron Technology, Inc. | Apparatuses and methods for performing compare operations using sensing circuitry |
US8971124B1 (en) | 2013-08-08 | 2015-03-03 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9009568B2 (en) | 2013-08-09 | 2015-04-14 | Sandisk Technologies Inc. | Sensing parameter management in non-volatile memory storage system to compensate for broken word lines |
US9153305B2 (en) | 2013-08-30 | 2015-10-06 | Micron Technology, Inc. | Independently addressable memory array address spaces |
CN105531768B (zh) * | 2013-08-30 | 2019-12-31 | 英派尔科技开发有限公司 | 闪存中功率消耗的减小 |
US9293205B2 (en) | 2013-09-14 | 2016-03-22 | Aplus Flash Technology, Inc | Multi-task concurrent/pipeline NAND operations on all planes |
US9019785B2 (en) | 2013-09-19 | 2015-04-28 | Micron Technology, Inc. | Data shifting via a number of isolation devices |
US9413491B1 (en) | 2013-10-08 | 2016-08-09 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for multiple dimension decoding and encoding a message |
US9786388B1 (en) | 2013-10-09 | 2017-10-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9397706B1 (en) | 2013-10-09 | 2016-07-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | System and method for irregular multiple dimension decoding and encoding |
US9348694B1 (en) | 2013-10-09 | 2016-05-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Detecting and managing bad columns |
US9449675B2 (en) | 2013-10-31 | 2016-09-20 | Micron Technology, Inc. | Apparatuses and methods for identifying an extremum value stored in an array of memory cells |
US9430191B2 (en) | 2013-11-08 | 2016-08-30 | Micron Technology, Inc. | Division operations for memory |
US9129701B2 (en) | 2013-12-19 | 2015-09-08 | Sandisk Technologies Inc. | Asymmetric state detection for non-volatile storage |
US9613704B2 (en) | 2013-12-25 | 2017-04-04 | Aplus Flash Technology, Inc | 2D/3D NAND memory array with bit-line hierarchical structure for multi-page concurrent SLC/MLC program and program-verify |
US9536612B1 (en) | 2014-01-23 | 2017-01-03 | Avago Technologies General Ip (Singapore) Pte. Ltd | Digital signaling processing for three dimensional flash memory arrays |
US9349740B2 (en) | 2014-01-24 | 2016-05-24 | Sandisk Technologies Inc. | Non-volatile storage element with suspended charge storage region |
US10120792B1 (en) | 2014-01-29 | 2018-11-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Programming an embedded flash storage device |
US9330969B2 (en) | 2014-02-12 | 2016-05-03 | Sandisk Technologies Inc. | Air gap formation between bit lines with top protection |
US9934856B2 (en) | 2014-03-31 | 2018-04-03 | Micron Technology, Inc. | Apparatuses and methods for comparing data patterns in memory |
US9542262B1 (en) | 2014-05-29 | 2017-01-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Error correction |
US9711207B2 (en) | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9786335B2 (en) | 2014-06-05 | 2017-10-10 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9496023B2 (en) | 2014-06-05 | 2016-11-15 | Micron Technology, Inc. | Comparison operations on logical representations of values in memory |
US9910787B2 (en) | 2014-06-05 | 2018-03-06 | Micron Technology, Inc. | Virtual address table |
US9830999B2 (en) | 2014-06-05 | 2017-11-28 | Micron Technology, Inc. | Comparison operations in memory |
US9455020B2 (en) | 2014-06-05 | 2016-09-27 | Micron Technology, Inc. | Apparatuses and methods for performing an exclusive or operation using sensing circuitry |
US10074407B2 (en) | 2014-06-05 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for performing invert operations using sensing circuitry |
US9704540B2 (en) | 2014-06-05 | 2017-07-11 | Micron Technology, Inc. | Apparatuses and methods for parity determination using sensing circuitry |
US9449674B2 (en) | 2014-06-05 | 2016-09-20 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9711206B2 (en) | 2014-06-05 | 2017-07-18 | Micron Technology, Inc. | Performing logical operations using sensing circuitry |
US9779019B2 (en) | 2014-06-05 | 2017-10-03 | Micron Technology, Inc. | Data storage layout |
US9892033B1 (en) | 2014-06-24 | 2018-02-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Management of memory units |
US9336891B2 (en) | 2014-07-02 | 2016-05-10 | Sandisk Technologies Inc. | Look ahead read method for non-volatile memory |
US9584159B1 (en) | 2014-07-03 | 2017-02-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Interleaved encoding |
US9972393B1 (en) | 2014-07-03 | 2018-05-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accelerating programming of a flash memory module |
US9449702B1 (en) | 2014-07-08 | 2016-09-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Power management |
WO2016014731A1 (en) | 2014-07-22 | 2016-01-28 | Aplus Flash Technology, Inc. | Yukai vsl-based vt-compensation for nand memory |
US9904515B2 (en) | 2014-09-03 | 2018-02-27 | Micron Technology, Inc. | Multiplication operations in memory |
US9898252B2 (en) | 2014-09-03 | 2018-02-20 | Micron Technology, Inc. | Multiplication operations in memory |
US9589602B2 (en) | 2014-09-03 | 2017-03-07 | Micron Technology, Inc. | Comparison operations in memory |
US10068652B2 (en) | 2014-09-03 | 2018-09-04 | Micron Technology, Inc. | Apparatuses and methods for determining population count |
US9740607B2 (en) | 2014-09-03 | 2017-08-22 | Micron Technology, Inc. | Swap operations in memory |
US9747961B2 (en) | 2014-09-03 | 2017-08-29 | Micron Technology, Inc. | Division operations in memory |
US9847110B2 (en) | 2014-09-03 | 2017-12-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in multiple columns of an array corresponding to digits of a vector |
US9940026B2 (en) | 2014-10-03 | 2018-04-10 | Micron Technology, Inc. | Multidimensional contiguous memory allocation |
US9836218B2 (en) | 2014-10-03 | 2017-12-05 | Micron Technology, Inc. | Computing reduction and prefix sum operations in memory |
US10163467B2 (en) | 2014-10-16 | 2018-12-25 | Micron Technology, Inc. | Multiple endianness compatibility |
US10147480B2 (en) | 2014-10-24 | 2018-12-04 | Micron Technology, Inc. | Sort operation in memory |
US9443606B2 (en) | 2014-10-28 | 2016-09-13 | Sandisk Technologies Llc | Word line dependent two strobe sensing mode for nonvolatile storage elements |
US9779784B2 (en) | 2014-10-29 | 2017-10-03 | Micron Technology, Inc. | Apparatuses and methods for performing logical operations using sensing circuitry |
US9734903B2 (en) | 2014-11-11 | 2017-08-15 | Sandisk Technologies Llc | Disturb condition detection for a resistive random access memory |
US9524211B1 (en) | 2014-11-18 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Codeword management |
CN105702292B (zh) * | 2014-11-25 | 2019-11-29 | 北京兆易创新科技股份有限公司 | 一种非易失存储器的数据恢复方法和装置 |
US9747960B2 (en) | 2014-12-01 | 2017-08-29 | Micron Technology, Inc. | Apparatuses and methods for converting a mask to an index |
US10073635B2 (en) | 2014-12-01 | 2018-09-11 | Micron Technology, Inc. | Multiple endianness compatibility |
KR102282947B1 (ko) | 2014-12-15 | 2021-07-30 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
US10061590B2 (en) | 2015-01-07 | 2018-08-28 | Micron Technology, Inc. | Generating and executing a control flow |
US10032493B2 (en) | 2015-01-07 | 2018-07-24 | Micron Technology, Inc. | Longest element length determination in memory |
US10305515B1 (en) | 2015-02-02 | 2019-05-28 | Avago Technologies International Sales Pte. Limited | System and method for encoding using multiple linear feedback shift registers |
US9583163B2 (en) | 2015-02-03 | 2017-02-28 | Micron Technology, Inc. | Loop structure for operations in memory |
WO2016126472A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for scatter and gather |
WO2016126478A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for memory device as a store for program instructions |
WO2016126474A1 (en) | 2015-02-06 | 2016-08-11 | Micron Technology, Inc. | Apparatuses and methods for parallel writing to multiple memory device locations |
CN107408408B (zh) | 2015-03-10 | 2021-03-05 | 美光科技公司 | 用于移位决定的装置及方法 |
US9741399B2 (en) | 2015-03-11 | 2017-08-22 | Micron Technology, Inc. | Data shift by elements of a vector in memory |
US9898253B2 (en) | 2015-03-11 | 2018-02-20 | Micron Technology, Inc. | Division operations on variable length elements in memory |
EP3268965A4 (en) | 2015-03-12 | 2018-10-03 | Micron Technology, INC. | Apparatuses and methods for data movement |
US10146537B2 (en) | 2015-03-13 | 2018-12-04 | Micron Technology, Inc. | Vector population count determination in memory |
US10049054B2 (en) | 2015-04-01 | 2018-08-14 | Micron Technology, Inc. | Virtual register file |
US10140104B2 (en) | 2015-04-14 | 2018-11-27 | Micron Technology, Inc. | Target architecture determination |
US9959923B2 (en) | 2015-04-16 | 2018-05-01 | Micron Technology, Inc. | Apparatuses and methods to reverse data stored in memory |
US10073786B2 (en) | 2015-05-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for compute enabled cache |
US10628255B1 (en) | 2015-06-11 | 2020-04-21 | Avago Technologies International Sales Pte. Limited | Multi-dimensional decoding |
US9704541B2 (en) | 2015-06-12 | 2017-07-11 | Micron Technology, Inc. | Simulating access lines |
US9921777B2 (en) | 2015-06-22 | 2018-03-20 | Micron Technology, Inc. | Apparatuses and methods for data transfer from sensing circuitry to a controller |
US9851921B1 (en) | 2015-07-05 | 2017-12-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Flash memory chip processing |
US9996479B2 (en) | 2015-08-17 | 2018-06-12 | Micron Technology, Inc. | Encryption of executables in computational memory |
US20170117036A1 (en) | 2015-10-22 | 2017-04-27 | Sandisk Technologies Llc | Source line driver for three dimensional non-volatile memory |
US9715924B2 (en) | 2015-10-22 | 2017-07-25 | Sandisk Technologies Llc | Three dimensional non-volatile memory with current sensing programming status |
US9721652B2 (en) | 2015-11-17 | 2017-08-01 | Sandisk Technologies Llc | State dependent sensing for wordline interference correction |
KR20170073980A (ko) * | 2015-12-21 | 2017-06-29 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그것의 동작 방법 |
US9905276B2 (en) | 2015-12-21 | 2018-02-27 | Micron Technology, Inc. | Control of sensing components in association with performing operations |
US9952925B2 (en) | 2016-01-06 | 2018-04-24 | Micron Technology, Inc. | Error code calculation on sensing circuitry |
US10048888B2 (en) | 2016-02-10 | 2018-08-14 | Micron Technology, Inc. | Apparatuses and methods for partitioned parallel data movement |
US9892767B2 (en) | 2016-02-12 | 2018-02-13 | Micron Technology, Inc. | Data gathering in memory |
US9971541B2 (en) | 2016-02-17 | 2018-05-15 | Micron Technology, Inc. | Apparatuses and methods for data movement |
US9899070B2 (en) | 2016-02-19 | 2018-02-20 | Micron Technology, Inc. | Modified decode for corner turn |
US10956439B2 (en) | 2016-02-19 | 2021-03-23 | Micron Technology, Inc. | Data transfer with a bit vector operation device |
US9697876B1 (en) | 2016-03-01 | 2017-07-04 | Micron Technology, Inc. | Vertical bit vector shift in memory |
US9954558B1 (en) | 2016-03-03 | 2018-04-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Fast decoding of data stored in a flash memory |
US10262721B2 (en) | 2016-03-10 | 2019-04-16 | Micron Technology, Inc. | Apparatuses and methods for cache invalidate |
US9997232B2 (en) | 2016-03-10 | 2018-06-12 | Micron Technology, Inc. | Processing in memory (PIM) capable memory device having sensing circuitry performing logic operations |
US10379772B2 (en) | 2016-03-16 | 2019-08-13 | Micron Technology, Inc. | Apparatuses and methods for operations using compressed and decompressed data |
US9910637B2 (en) | 2016-03-17 | 2018-03-06 | Micron Technology, Inc. | Signed division in memory |
US10388393B2 (en) | 2016-03-22 | 2019-08-20 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
US11074988B2 (en) | 2016-03-22 | 2021-07-27 | Micron Technology, Inc. | Apparatus and methods for debugging on a host and memory device |
US10120740B2 (en) | 2016-03-22 | 2018-11-06 | Micron Technology, Inc. | Apparatus and methods for debugging on a memory device |
US10977033B2 (en) | 2016-03-25 | 2021-04-13 | Micron Technology, Inc. | Mask patterns generated in memory from seed vectors |
US10474581B2 (en) | 2016-03-25 | 2019-11-12 | Micron Technology, Inc. | Apparatuses and methods for cache operations |
US10074416B2 (en) | 2016-03-28 | 2018-09-11 | Micron Technology, Inc. | Apparatuses and methods for data movement |
US10430244B2 (en) | 2016-03-28 | 2019-10-01 | Micron Technology, Inc. | Apparatuses and methods to determine timing of operations |
US10453502B2 (en) | 2016-04-04 | 2019-10-22 | Micron Technology, Inc. | Memory bank power coordination including concurrently performing a memory operation in a selected number of memory regions |
US10607665B2 (en) | 2016-04-07 | 2020-03-31 | Micron Technology, Inc. | Span mask generation |
US9818459B2 (en) | 2016-04-19 | 2017-11-14 | Micron Technology, Inc. | Invert operations using sensing circuitry |
US9659605B1 (en) | 2016-04-20 | 2017-05-23 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
US10153008B2 (en) | 2016-04-20 | 2018-12-11 | Micron Technology, Inc. | Apparatuses and methods for performing corner turn operations using sensing circuitry |
US10042608B2 (en) | 2016-05-11 | 2018-08-07 | Micron Technology, Inc. | Signed division in memory |
US9659610B1 (en) | 2016-05-18 | 2017-05-23 | Micron Technology, Inc. | Apparatuses and methods for shifting data |
US10049707B2 (en) | 2016-06-03 | 2018-08-14 | Micron Technology, Inc. | Shifting data |
KR102611841B1 (ko) * | 2016-06-09 | 2023-12-11 | 에스케이하이닉스 주식회사 | 페이지 버퍼 및 이를 포함하는 메모리 장치 |
US10387046B2 (en) | 2016-06-22 | 2019-08-20 | Micron Technology, Inc. | Bank to bank data transfer |
US10248499B2 (en) | 2016-06-24 | 2019-04-02 | Sandisk Technologies Llc | Non-volatile storage system using two pass programming with bit error control |
US10037785B2 (en) | 2016-07-08 | 2018-07-31 | Micron Technology, Inc. | Scan chain operation in sensing circuitry |
US10388360B2 (en) | 2016-07-19 | 2019-08-20 | Micron Technology, Inc. | Utilization of data stored in an edge section of an array |
US10387299B2 (en) | 2016-07-20 | 2019-08-20 | Micron Technology, Inc. | Apparatuses and methods for transferring data |
US10733089B2 (en) | 2016-07-20 | 2020-08-04 | Micron Technology, Inc. | Apparatuses and methods for write address tracking |
US9972367B2 (en) | 2016-07-21 | 2018-05-15 | Micron Technology, Inc. | Shifting data in sensing circuitry |
US9767864B1 (en) | 2016-07-21 | 2017-09-19 | Micron Technology, Inc. | Apparatuses and methods for storing a data value in a sensing circuitry element |
US10303632B2 (en) | 2016-07-26 | 2019-05-28 | Micron Technology, Inc. | Accessing status information |
US10468087B2 (en) | 2016-07-28 | 2019-11-05 | Micron Technology, Inc. | Apparatuses and methods for operations in a self-refresh state |
US9990181B2 (en) | 2016-08-03 | 2018-06-05 | Micron Technology, Inc. | Apparatuses and methods for random number generation |
US11029951B2 (en) | 2016-08-15 | 2021-06-08 | Micron Technology, Inc. | Smallest or largest value element determination |
US10606587B2 (en) | 2016-08-24 | 2020-03-31 | Micron Technology, Inc. | Apparatus and methods related to microcode instructions indicating instruction types |
US10466928B2 (en) | 2016-09-15 | 2019-11-05 | Micron Technology, Inc. | Updating a register in memory |
US10387058B2 (en) | 2016-09-29 | 2019-08-20 | Micron Technology, Inc. | Apparatuses and methods to change data category values |
US10014034B2 (en) | 2016-10-06 | 2018-07-03 | Micron Technology, Inc. | Shifting data in sensing circuitry |
US10529409B2 (en) | 2016-10-13 | 2020-01-07 | Micron Technology, Inc. | Apparatuses and methods to perform logical operations using sensing circuitry |
US9805772B1 (en) | 2016-10-20 | 2017-10-31 | Micron Technology, Inc. | Apparatuses and methods to selectively perform logical operations |
CN207637499U (zh) | 2016-11-08 | 2018-07-20 | 美光科技公司 | 用于形成在存储器单元阵列上方的计算组件的设备 |
US10423353B2 (en) | 2016-11-11 | 2019-09-24 | Micron Technology, Inc. | Apparatuses and methods for memory alignment |
US9761300B1 (en) | 2016-11-22 | 2017-09-12 | Micron Technology, Inc. | Data shift apparatuses and methods |
US10068656B2 (en) | 2016-12-27 | 2018-09-04 | Sandisk Technologies Llc | Non-volatile memory with multi-pass programming |
US10402340B2 (en) | 2017-02-21 | 2019-09-03 | Micron Technology, Inc. | Memory array page table walk |
US10268389B2 (en) | 2017-02-22 | 2019-04-23 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
US10403352B2 (en) | 2017-02-22 | 2019-09-03 | Micron Technology, Inc. | Apparatuses and methods for compute in data path |
US10838899B2 (en) | 2017-03-21 | 2020-11-17 | Micron Technology, Inc. | Apparatuses and methods for in-memory data switching networks |
US11222260B2 (en) | 2017-03-22 | 2022-01-11 | Micron Technology, Inc. | Apparatuses and methods for operating neural networks |
US10185674B2 (en) | 2017-03-22 | 2019-01-22 | Micron Technology, Inc. | Apparatus and methods for in data path compute operations |
US10049721B1 (en) | 2017-03-27 | 2018-08-14 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations |
US10147467B2 (en) | 2017-04-17 | 2018-12-04 | Micron Technology, Inc. | Element value comparison in memory |
US10043570B1 (en) | 2017-04-17 | 2018-08-07 | Micron Technology, Inc. | Signed element compare in memory |
US9997212B1 (en) | 2017-04-24 | 2018-06-12 | Micron Technology, Inc. | Accessing data in memory |
US10942843B2 (en) | 2017-04-25 | 2021-03-09 | Micron Technology, Inc. | Storing data elements of different lengths in respective adjacent rows or columns according to memory shapes |
US10236038B2 (en) | 2017-05-15 | 2019-03-19 | Micron Technology, Inc. | Bank to bank data transfer |
US10068664B1 (en) | 2017-05-19 | 2018-09-04 | Micron Technology, Inc. | Column repair in memory |
US10013197B1 (en) | 2017-06-01 | 2018-07-03 | Micron Technology, Inc. | Shift skip |
US10262701B2 (en) | 2017-06-07 | 2019-04-16 | Micron Technology, Inc. | Data transfer between subarrays in memory |
US10152271B1 (en) | 2017-06-07 | 2018-12-11 | Micron Technology, Inc. | Data replication |
US10318168B2 (en) | 2017-06-19 | 2019-06-11 | Micron Technology, Inc. | Apparatuses and methods for simultaneous in data path compute operations |
US10115464B1 (en) * | 2017-07-27 | 2018-10-30 | Sandisk Technologies Llc | Electric field to reduce select gate threshold voltage shift |
US10162005B1 (en) | 2017-08-09 | 2018-12-25 | Micron Technology, Inc. | Scan chain operations |
US10534553B2 (en) | 2017-08-30 | 2020-01-14 | Micron Technology, Inc. | Memory array accessibility |
US10416927B2 (en) | 2017-08-31 | 2019-09-17 | Micron Technology, Inc. | Processing in memory |
US10741239B2 (en) | 2017-08-31 | 2020-08-11 | Micron Technology, Inc. | Processing in memory device including a row address strobe manager |
US10346092B2 (en) | 2017-08-31 | 2019-07-09 | Micron Technology, Inc. | Apparatuses and methods for in-memory operations using timing circuitry |
US10409739B2 (en) | 2017-10-24 | 2019-09-10 | Micron Technology, Inc. | Command selection policy |
US10304550B1 (en) | 2017-11-29 | 2019-05-28 | Sandisk Technologies Llc | Sense amplifier with negative threshold sensing for non-volatile memory |
US10522210B2 (en) | 2017-12-14 | 2019-12-31 | Micron Technology, Inc. | Apparatuses and methods for subarray addressing |
US10332586B1 (en) | 2017-12-19 | 2019-06-25 | Micron Technology, Inc. | Apparatuses and methods for subrow addressing |
US10276251B1 (en) * | 2017-12-21 | 2019-04-30 | Sandisk Technologies Llc | Partial memory die with masked verify |
US10614875B2 (en) | 2018-01-30 | 2020-04-07 | Micron Technology, Inc. | Logical operations using memory cells |
US10437557B2 (en) | 2018-01-31 | 2019-10-08 | Micron Technology, Inc. | Determination of a match between data values stored by several arrays |
US11194477B2 (en) | 2018-01-31 | 2021-12-07 | Micron Technology, Inc. | Determination of a match between data values stored by three or more arrays |
US10725696B2 (en) | 2018-04-12 | 2020-07-28 | Micron Technology, Inc. | Command selection policy with read priority |
US10440341B1 (en) | 2018-06-07 | 2019-10-08 | Micron Technology, Inc. | Image processor formed in an array of memory cells |
US10769071B2 (en) | 2018-10-10 | 2020-09-08 | Micron Technology, Inc. | Coherent memory access |
US11175915B2 (en) | 2018-10-10 | 2021-11-16 | Micron Technology, Inc. | Vector registers implemented in memory |
US10770155B2 (en) * | 2018-10-11 | 2020-09-08 | International Business Machines Corporation | Determining a read apparent voltage infector page and infected page |
US10483978B1 (en) | 2018-10-16 | 2019-11-19 | Micron Technology, Inc. | Memory device processing |
US11184446B2 (en) | 2018-12-05 | 2021-11-23 | Micron Technology, Inc. | Methods and apparatus for incentivizing participation in fog networks |
US10643695B1 (en) | 2019-01-10 | 2020-05-05 | Sandisk Technologies Llc | Concurrent multi-state program verify for non-volatile memory |
CN109871881B (zh) * | 2019-01-24 | 2020-12-08 | 清华大学 | 一种基于凝聚分层聚类算法的电池工况分析方法 |
US10867655B1 (en) | 2019-07-08 | 2020-12-15 | Micron Technology, Inc. | Methods and apparatus for dynamically adjusting performance of partitioned memory |
US11360768B2 (en) | 2019-08-14 | 2022-06-14 | Micron Technolgy, Inc. | Bit string operations in memory |
JP2022520372A (ja) | 2019-10-29 | 2022-03-30 | 長江存儲科技有限責任公司 | メモリデバイスのプログラミング方法、およびメモリデバイス |
US11449577B2 (en) | 2019-11-20 | 2022-09-20 | Micron Technology, Inc. | Methods and apparatus for performing video processing matrix operations within a memory array |
US11853385B2 (en) | 2019-12-05 | 2023-12-26 | Micron Technology, Inc. | Methods and apparatus for performing diversity matrix operations within a memory array |
US11024392B1 (en) | 2019-12-23 | 2021-06-01 | Sandisk Technologies Llc | Sense amplifier for bidirectional sensing of memory cells of a non-volatile memory |
US11024393B1 (en) | 2020-01-09 | 2021-06-01 | Sandisk Technologies Llc | Read operation for non-volatile memory with compensation for adjacent wordline |
JP6966587B2 (ja) | 2020-03-02 | 2021-11-17 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置および読出し方法 |
JP6895002B1 (ja) * | 2020-05-27 | 2021-06-30 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置および読出し方法 |
US11188268B1 (en) | 2020-05-28 | 2021-11-30 | Western Digital Technologies, Inc. | Programmable processor in an integrated memory assembly |
CN113821156A (zh) | 2020-06-18 | 2021-12-21 | 桑迪士克科技有限责任公司 | 前瞻识别潜在不可校正的误差校正存储器单元和现场对策 |
US11227641B1 (en) | 2020-07-21 | 2022-01-18 | Micron Technology, Inc. | Arithmetic operations in memory |
KR20220015245A (ko) * | 2020-07-30 | 2022-02-08 | 삼성전자주식회사 | 프로그래밍 동안 양방향 채널 프리차지를 수행하는 비휘발성 메모리 장치 |
US11568943B2 (en) | 2020-11-24 | 2023-01-31 | Sandisk Technologies Llc | Memory apparatus and method of operation using zero pulse smart verify |
US11342035B1 (en) | 2020-11-24 | 2022-05-24 | Sandisk Technologies Llc | Memory apparatus and method of operation using one pulse smart verify |
US11636905B2 (en) | 2020-12-07 | 2023-04-25 | Sandisk Technologies Llc | Temperature compensation for unselected sub-block inhibit bias for mitigating erase disturb |
US11557358B2 (en) | 2021-04-15 | 2023-01-17 | Sandisk Technologies Llc | Memory apparatus and method of operation using adaptive erase time compensation for segmented erase |
US11556416B2 (en) | 2021-05-05 | 2023-01-17 | Apple Inc. | Controlling memory readout reliability and throughput by adjusting distance between read thresholds |
CN113241107B (zh) * | 2021-06-01 | 2022-07-26 | 中国科学院微电子研究所 | 一种减少三维存储器的数据刷新操作的方法及装置 |
US11482292B1 (en) | 2021-06-23 | 2022-10-25 | Western Digital Technologies, Inc. | Non-volatile storage with processive writes |
US11847342B2 (en) | 2021-07-28 | 2023-12-19 | Apple Inc. | Efficient transfer of hard data and confidence levels in reading a nonvolatile memory |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
JP2003249085A (ja) * | 2002-01-18 | 2003-09-05 | Sandisk Corp | 隣接メモリセルとのフィールド結合によって、影響を受けたメモリセルからのデータ回復を行う技法 |
JP2004326866A (ja) * | 2003-04-22 | 2004-11-18 | Toshiba Corp | 不揮発性半導体記憶装置及びこれを用いた電子装置 |
Family Cites Families (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5268319A (en) | 1988-06-08 | 1993-12-07 | Eliyahou Harari | Highly compact EPROM and flash EEPROM devices |
EP1031992B1 (en) | 1989-04-13 | 2006-06-21 | SanDisk Corporation | Flash EEPROM system |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5532962A (en) * | 1992-05-20 | 1996-07-02 | Sandisk Corporation | Soft errors handling in EEPROM devices |
JP2684980B2 (ja) * | 1993-12-24 | 1997-12-03 | 日本電気株式会社 | 半導体記憶装置及びその製造方法 |
US5539690A (en) | 1994-06-02 | 1996-07-23 | Intel Corporation | Write verify schemes for flash memory with multilevel cells |
DE19523775C2 (de) | 1994-06-29 | 2001-12-06 | Toshiba Kawasaki Kk | Nichtflüchtige Halbleiterspeichervorrichtung |
GB9423036D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | An integrated circuit memory device |
DE69514783T2 (de) * | 1995-03-23 | 2000-06-08 | St Microelectronics Srl | Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen |
TW389909B (en) | 1995-09-13 | 2000-05-11 | Toshiba Corp | Nonvolatile semiconductor memory device and its usage |
US5642407A (en) * | 1995-12-29 | 1997-06-24 | Mci Corporation | System and method for selected audio response in a telecommunications network |
US5903495A (en) * | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
TW504510B (en) * | 1996-05-10 | 2002-10-01 | Janssen Pharmaceutica Nv | 2,4-diaminopyrimidine derivatives |
JP3976839B2 (ja) | 1996-07-09 | 2007-09-19 | 株式会社ルネサステクノロジ | 不揮発性メモリシステムおよび不揮発性半導体メモリ |
KR100323554B1 (ko) * | 1997-05-14 | 2002-03-08 | 니시무로 타이죠 | 불휘발성반도체메모리장치 |
US6956779B2 (en) * | 1999-01-14 | 2005-10-18 | Silicon Storage Technology, Inc. | Multistage autozero sensing for a multilevel non-volatile memory integrated circuit system |
US7031214B2 (en) * | 1999-01-14 | 2006-04-18 | Silicon Storage Technology, Inc. | Digital multilevel memory system having multistage autozero sensing |
IT1306963B1 (it) * | 1999-01-19 | 2001-10-11 | St Microelectronics Srl | Circuito a compensazione capacitativa per la regolazione dellatensione di lettura di riga in memorie non-volatili |
JP3863330B2 (ja) * | 1999-09-28 | 2006-12-27 | 株式会社東芝 | 不揮発性半導体メモリ |
US6426893B1 (en) | 2000-02-17 | 2002-07-30 | Sandisk Corporation | Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks |
FR2805653A1 (fr) | 2000-02-28 | 2001-08-31 | St Microelectronics Sa | Memoire serie programmable et effacable electriquement a lecture par anticipation |
US6396742B1 (en) * | 2000-07-28 | 2002-05-28 | Silicon Storage Technology, Inc. | Testing of multilevel semiconductor memory |
US6535423B2 (en) * | 2000-12-29 | 2003-03-18 | Intel Corporation | Drain bias for non-volatile memory |
JP3631463B2 (ja) * | 2001-12-27 | 2005-03-23 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US6377507B1 (en) * | 2001-04-06 | 2002-04-23 | Integrated Memory Technologies, Inc. | Non-volatile memory device having high speed page mode operation |
TW559814B (en) | 2001-05-31 | 2003-11-01 | Semiconductor Energy Lab | Nonvolatile memory and method of driving the same |
US6522580B2 (en) * | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
US6717847B2 (en) * | 2001-09-17 | 2004-04-06 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US6771536B2 (en) * | 2002-02-27 | 2004-08-03 | Sandisk Corporation | Operating techniques for reducing program and read disturbs of a non-volatile memory |
KR100476888B1 (ko) * | 2002-04-04 | 2005-03-17 | 삼성전자주식회사 | 온도보상기능을 가진 멀티비트 플래쉬메모리 |
US6785169B1 (en) * | 2002-04-05 | 2004-08-31 | T-Ram, Inc. | Memory cell error recovery |
US6594181B1 (en) * | 2002-05-10 | 2003-07-15 | Fujitsu Limited | System for reading a double-bit memory cell |
US6894931B2 (en) * | 2002-06-20 | 2005-05-17 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device |
US6950342B2 (en) | 2002-07-05 | 2005-09-27 | Impinj, Inc. | Differential floating gate nonvolatile memories |
JP4260434B2 (ja) | 2002-07-16 | 2009-04-30 | 富士通マイクロエレクトロニクス株式会社 | 不揮発性半導体メモリ及びその動作方法 |
US6781877B2 (en) * | 2002-09-06 | 2004-08-24 | Sandisk Corporation | Techniques for reducing effects of coupling between storage elements of adjacent rows of memory cells |
US6987693B2 (en) * | 2002-09-24 | 2006-01-17 | Sandisk Corporation | Non-volatile memory and method with reduced neighboring field errors |
US7196931B2 (en) * | 2002-09-24 | 2007-03-27 | Sandisk Corporation | Non-volatile memory and method with reduced source line bias errors |
US6983428B2 (en) * | 2002-09-24 | 2006-01-03 | Sandisk Corporation | Highly compact non-volatile memory and method thereof |
US7443757B2 (en) * | 2002-09-24 | 2008-10-28 | Sandisk Corporation | Non-volatile memory and method with reduced bit line crosstalk errors |
US6891753B2 (en) * | 2002-09-24 | 2005-05-10 | Sandisk Corporation | Highly compact non-volatile memory and method therefor with internal serial buses |
US6657891B1 (en) * | 2002-11-29 | 2003-12-02 | Kabushiki Kaisha Toshiba | Semiconductor memory device for storing multivalued data |
US6829167B2 (en) * | 2002-12-12 | 2004-12-07 | Sandisk Corporation | Error recovery for nonvolatile memory |
US6956770B2 (en) * | 2003-09-17 | 2005-10-18 | Sandisk Corporation | Non-volatile memory and method with bit line compensation dependent on neighboring operating modes |
US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
KR20050033996A (ko) * | 2003-10-07 | 2005-04-14 | 삼성전자주식회사 | 이동 통신 시스템에서 채널 수신 장치 및 방법 |
JP2005166741A (ja) | 2003-11-28 | 2005-06-23 | Sharp Corp | 半導体記憶素子の特性評価方法及びモデルパラメータ抽出方法 |
US6888758B1 (en) * | 2004-01-21 | 2005-05-03 | Sandisk Corporation | Programming non-volatile memory |
US7372730B2 (en) | 2004-01-26 | 2008-05-13 | Sandisk Corporation | Method of reading NAND memory to compensate for coupling between storage elements |
US7020017B2 (en) * | 2004-04-06 | 2006-03-28 | Sandisk Corporation | Variable programming of non-volatile memory |
US7187585B2 (en) | 2005-04-05 | 2007-03-06 | Sandisk Corporation | Read operation for non-volatile storage that includes compensation for coupling |
US7196928B2 (en) | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling during read operations of non-volatile memory |
US7196946B2 (en) * | 2005-04-05 | 2007-03-27 | Sandisk Corporation | Compensating for coupling in non-volatile storage |
US7193898B2 (en) | 2005-06-20 | 2007-03-20 | Sandisk Corporation | Compensation currents in non-volatile memory read operations |
JP4907925B2 (ja) * | 2005-09-09 | 2012-04-04 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7206235B1 (en) * | 2005-10-14 | 2007-04-17 | Sandisk Corporation | Apparatus for controlled programming of non-volatile memory exhibiting bit line coupling |
-
2005
- 2005-04-05 US US11/099,133 patent/US7196928B2/en active Active
-
2006
- 2006-03-31 CN CN2006800166941A patent/CN101194322B/zh not_active Expired - Fee Related
- 2006-03-31 WO PCT/US2006/011810 patent/WO2006107729A1/en active Application Filing
- 2006-03-31 EP EP06748989.8A patent/EP1866929B1/en not_active Not-in-force
- 2006-03-31 JP JP2008505380A patent/JP4665029B2/ja not_active Expired - Fee Related
- 2006-03-31 KR KR1020077025330A patent/KR100934495B1/ko not_active IP Right Cessation
- 2006-04-04 TW TW095112039A patent/TWI300929B/zh not_active IP Right Cessation
- 2006-12-27 US US11/616,736 patent/US7301810B2/en active Active
- 2006-12-27 US US11/616,741 patent/US7301813B2/en active Active
- 2006-12-27 US US11/616,745 patent/US7315477B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
JP2003249085A (ja) * | 2002-01-18 | 2003-09-05 | Sandisk Corp | 隣接メモリセルとのフィールド結合によって、影響を受けたメモリセルからのデータ回復を行う技法 |
JP2004326866A (ja) * | 2003-04-22 | 2004-11-18 | Toshiba Corp | 不揮発性半導体記憶装置及びこれを用いた電子装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20080016543A (ko) | 2008-02-21 |
TWI300929B (en) | 2008-09-11 |
US20070109845A1 (en) | 2007-05-17 |
US20060221692A1 (en) | 2006-10-05 |
EP1866929B1 (en) | 2014-01-29 |
JP2008536251A (ja) | 2008-09-04 |
US7315477B2 (en) | 2008-01-01 |
US7301810B2 (en) | 2007-11-27 |
CN101194322B (zh) | 2012-05-23 |
TW200710848A (en) | 2007-03-16 |
KR100934495B1 (ko) | 2009-12-30 |
CN101194322A (zh) | 2008-06-04 |
US20070109849A1 (en) | 2007-05-17 |
US20070103986A1 (en) | 2007-05-10 |
US7301813B2 (en) | 2007-11-27 |
WO2006107729A1 (en) | 2006-10-12 |
US7196928B2 (en) | 2007-03-27 |
EP1866929A1 (en) | 2007-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4665029B2 (ja) | 不揮発性メモリの読み出し動作中の結合の補償 | |
JP4778553B2 (ja) | 結合の補償を含む不揮発性記憶のための読み出し動作 | |
JP4892552B2 (ja) | 不揮発性メモリの読み出し動作中の電流補償 | |
EP1866930B1 (en) | Compensating for coupling in non-volatile strorage | |
JP4940300B2 (ja) | プログラミング中における結合の補償 | |
JP4918136B2 (ja) | 結合を使用する隣接素子の検出に基づく結合の補償 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100519 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100608 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100906 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100913 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20101007 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20101015 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101108 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20101214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110107 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4665029 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140114 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |