JP4658039B2 - Ｈｃｉプログラミングのためにソース電極上にバイアスを有する不揮発性メモリ - Google Patents

Ｈｃｉプログラミングのためにソース電極上にバイアスを有する不揮発性メモリ Download PDF

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Publication number
JP4658039B2
JP4658039B2 JP2006513084A JP2006513084A JP4658039B2 JP 4658039 B2 JP4658039 B2 JP 4658039B2 JP 2006513084 A JP2006513084 A JP 2006513084A JP 2006513084 A JP2006513084 A JP 2006513084A JP 4658039 B2 JP4658039 B2 JP 4658039B2
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JP
Japan
Prior art keywords
source
memory cell
level
programming pulse
memory
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Expired - Fee Related
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JP2006513084A
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English (en)
Japanese (ja)
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JP2006525622A (ja
JP2006525622A5 (enExample
Inventor
エス． チョイ、ジョン
チンダロール、ゴーリシャンカール
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NXP USA Inc
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NXP USA Inc
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Publication of JP2006525622A publication Critical patent/JP2006525622A/ja
Publication of JP2006525622A5 publication Critical patent/JP2006525622A5/ja
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Publication of JP4658039B2 publication Critical patent/JP4658039B2/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP2006513084A 2003-04-30 2004-04-16 Ｈｃｉプログラミングのためにソース電極上にバイアスを有する不揮発性メモリ Expired - Fee Related JP4658039B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/426,282 US6909638B2 (en) 2003-04-30 2003-04-30 Non-volatile memory having a bias on the source electrode for HCI programming
PCT/US2004/011870 WO2004100216A2 (en) 2003-04-30 2004-04-16 A non-volatile memory having a bias on the source electrode for hci programming

Publications (3)

Publication Number Publication Date
JP2006525622A JP2006525622A (ja) 2006-11-09
JP2006525622A5 JP2006525622A5 (enExample) 2007-06-07
JP4658039B2 true JP4658039B2 (ja) 2011-03-23

Family

ID=33309831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006513084A Expired - Fee Related JP4658039B2 (ja) 2003-04-30 2004-04-16 Ｈｃｉプログラミングのためにソース電極上にバイアスを有する不揮発性メモリ

Country Status (9)

Country Link
US (1) US6909638B2 (enExample)
EP (1) EP1623431B1 (enExample)
JP (1) JP4658039B2 (enExample)
KR (1) KR101060034B1 (enExample)
CN (1) CN1781157B (enExample)
AT (1) ATE446577T1 (enExample)
DE (1) DE602004023714D1 (enExample)
TW (1) TW200506939A (enExample)
WO (1) WO2004100216A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7695843B2 (en) * 2004-02-13 2010-04-13 Microcell Corporation Microfibrous fuel cell assemblies comprising fiber-supported electrocatalyst layers, and methods of making same
US7227783B2 (en) 2005-04-28 2007-06-05 Freescale Semiconductor, Inc. Memory structure and method of programming
US7428172B2 (en) * 2006-07-17 2008-09-23 Freescale Semiconductor, Inc. Concurrent programming and program verification of floating gate transistor
US7583554B2 (en) 2007-03-02 2009-09-01 Freescale Semiconductor, Inc. Integrated circuit fuse array
US7787323B2 (en) * 2007-04-27 2010-08-31 Freescale Semiconductor, Inc. Level detect circuit
KR100965076B1 (ko) * 2008-11-14 2010-06-21 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 방법
US7764550B2 (en) * 2008-11-25 2010-07-27 Freescale Semiconductor, Inc. Method of programming a non-volatile memory
US9312002B2 (en) 2014-04-04 2016-04-12 Sandisk Technologies Inc. Methods for programming ReRAM devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57150193A (en) * 1981-03-13 1982-09-16 Toshiba Corp Non-volatile semiconductor memory device
US4888735A (en) * 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
US5218571A (en) * 1990-05-07 1993-06-08 Cypress Semiconductor Corporation EPROM source bias circuit with compensation for processing characteristics
US5923585A (en) * 1997-01-10 1999-07-13 Invox Technology Source biasing in non-volatile memory having row-based sectors
US5798966A (en) * 1997-03-31 1998-08-25 Intel Corporation Flash memory VDS compensation techiques to reduce programming variability
JP3920415B2 (ja) * 1997-03-31 2007-05-30 三洋電機株式会社 不揮発性半導体メモリ装置
US6046932A (en) 1999-08-13 2000-04-04 Advanced Micro Devices, Inc. Circuit implementation to quench bit line leakage current in programming and over-erase correction modes in flash EEPROM
US6275415B1 (en) 1999-10-12 2001-08-14 Advanced Micro Devices, Inc. Multiple byte channel hot electron programming using ramped gate and source bias voltage
IT1308855B1 (it) * 1999-10-29 2002-01-11 St Microelectronics Srl Metodo di riprogrammazione controllata per celle di memoria nonvolatile,in particolare di tipo flash eeprom ed eprom.
JP2001195890A (ja) * 2000-01-12 2001-07-19 Sharp Corp 不揮発性半導体メモリ装置の書込み方式および書込み回路
JP4559606B2 (ja) * 2000-09-28 2010-10-13 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP2003123493A (ja) * 2001-10-12 2003-04-25 Fujitsu Ltd ソース電位を制御してプログラム動作を最適化した不揮発性メモリ
JP3908957B2 (ja) * 2002-01-24 2007-04-25 シャープ株式会社 不揮発性半導体メモリ装置

Also Published As

Publication number Publication date
EP1623431B1 (en) 2009-10-21
TW200506939A (en) 2005-02-16
CN1781157A (zh) 2006-05-31
JP2006525622A (ja) 2006-11-09
WO2004100216A3 (en) 2005-01-06
KR101060034B1 (ko) 2011-08-29
ATE446577T1 (de) 2009-11-15
WO2004100216A2 (en) 2004-11-18
US6909638B2 (en) 2005-06-21
EP1623431A2 (en) 2006-02-08
DE602004023714D1 (de) 2009-12-03
WO2004100216B1 (en) 2005-03-10
US20040218421A1 (en) 2004-11-04
EP1623431A4 (en) 2007-10-17
KR20060008942A (ko) 2006-01-27
CN1781157B (zh) 2012-02-29

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