JP4657337B2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置 Download PDFInfo
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- JP4657337B2 JP4657337B2 JP2008250462A JP2008250462A JP4657337B2 JP 4657337 B2 JP4657337 B2 JP 4657337B2 JP 2008250462 A JP2008250462 A JP 2008250462A JP 2008250462 A JP2008250462 A JP 2008250462A JP 4657337 B2 JP4657337 B2 JP 4657337B2
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
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- H01S5/0655—Single transverse or lateral mode emission
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1039—Details on the cavity length
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
- H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/162—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions made by diffusion or disordening of the active layer
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34326—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on InGa(Al)P, e.g. red laser
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- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
Description
図15は、AlGaInP系の端面窓構造を示す。この半導体レーザ装置は、n型GaAs基板51上に順次形成された積層構造を有する。この積層構造は、少なくとも、n型AlGaInPクラッド層52と、ノンドープAlGaInP光ガイド層、ノンドープGaInPウェル層、およびノンドープAlGaInPバリア層を含む多重量子井戸活性層53と、p型AlGaInPクラッド層54と、p型GaInPバンド不連続緩和層55と、P型GaAsキャップ層56とを含む。p型AlGaInPクラッド層54の一部と、p型GaInPバンド不連続緩和層55と、P型GaAsキャップ層56に、所定の幅でストライプ状のリッジが形成される。また、共振器の端面近傍には、亜鉛(Zn)の拡散により量子井戸層を無秩序化した窓部が形成される。さらに、端面近傍の窓部以外(以下、『内部』または『内部領域』と称する場合がある。)のリッジ上以外の場所は、絶縁膜57により覆われており、内部のリッジ上のP型GaAsキャップ層56にのみ、オーミックコンタクト用の電極(図示せず)が形成される。そして、内部のリッジ部にのみ電流が流れ、窓部は電流非注入となっている。
図2は、本発明の実施の形態1に係る半導体レーザ装置における窓領域18の断面を示す断面図であり、図3は、当該半導体レーザ装置における内部領域19の断面を示す断面図である。
図12は、実施の形態2に係る半導体レーザ装置の断面を示す模式図である。図12(a)は内部領域19の断面を示し、図12(b)は、窓領域18の断面を示す。
図13は、実施の形態3に係る半導体レーザ装置の断面を示す模式図である。図13(a)は内部領域19の断面を示し、図13(b)は、窓領域18の断面を示す。
図14は、実施の形態4に係る半導体レーザ装置の断面を示す模式図である。図14(a)は内部領域19の断面を示し、図14(b)は、窓領域18の断面を示す。
そして、第一の半導体レーザ装置においては、ストライプ幅の最も狭い部分の幅(W1)が2μm、ストライプ幅の最も広い部分の幅(W2)が4μm、テーパ領域の長さが1000μm、電流非注入である窓領域18の長さが、出射側で30μm、非出射面側で30μmである。また、電流非注入領域である窓領域18の端部に位置する出射側端部1のストライプ幅は4.0μmである。非出射面側においては、電流非注入領域である窓領域18内において、ストライプ幅をステップ状に4.0μmから2.0μmに変化させている。
Claims (9)
- 出射側端部、非出射側端部および上面を有する共振器を備えた半導体レーザ装置であって、
前記共振器は、
半導体基板と、
前記半導体基板上に形成されたn型クラッド層およびp型クラッド層と、
前記n型クラッド層および前記p型クラッド層に挟持される活性層とを含み、
前記共振器の軸方向に延びる突出部が前記共振器の前記上面に形成され、
前記突出部は、
前記出射側端部に位置する第1端部と、
前記非出射側端部に位置し、前記第1端部と同じ幅を有する第2端部と、
前記第1端部から前記第2端部に向けて前記突出部の幅をテーパ状に減少させるテーパ部と、
前記テーパ部に対して前記第2端部側に位置し、一定の幅を有する幅狭部分と、
前記幅狭部分と前記第2端部との間に位置し、前記突出部の幅を段差状に変化させる段差部とを含み、
前記共振器における前記出射側端部および前記非出射側端部に電流非注入領域が設けられ、
前記出射側端部に設けられた前記電流非注入領域内において、前記突出部における前記第1端部は、その幅が一定の部分を有し、
前記突出部における前記段差部は、前記非出射側端部に設けられた前記電流非注入領域内に形成される、半導体レーザ装置。 - 前記出射側端部および前記非出射側端部に設けられた前記電流非注入領域の少なくとも一部において、該電流非注入領域に挟まれた部分に対して、前記活性層のバンドギャップが大きい部分が形成される、請求項1に記載の半導体レーザ装置。
- 前記突出部の幅の最小値は、0.5μm以上3.0μm以下である、請求項1または請求項2に記載の半導体レーザ装置。
- 前記突出部の幅の最大値は、前記突出部の幅の最小値の1.2倍以上3.0倍以下である、請求項1から請求項3のいずれかに記載の半導体レーザ装置。
- 前記共振器における少なくとも前記非出射側端部に電流非注入領域が設けられ、
前記テーパ部の長さは、前記共振器の長さの0.2倍以上であり、かつ、前記共振器の長さから前記非出射側端部に設けられた前記電流非注入領域の長さを引いた長さ以下である、請求項1から請求項4のいずれかに記載の半導体レーザ装置。 - 前記活性層は、GaInPまたはAlGaInPを含む、請求項1から請求項5のいずれかに記載の半導体レーザ装置。
- 前記活性層は、GaAsまたはAlGaAsを含む、請求項1から請求項5のいずれかに記載の半導体レーザ装置。
- 前記活性層は、GaNまたはInGaNを含む、請求項1から請求項5のいずれかに記
載の半導体レーザ装置。 - 異なる2つ以上の波長で発振する、請求項1から請求項5のいずれかに記載の半導体レーザ装置。
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JP2008250462A JP4657337B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体レーザ装置 |
US12/564,552 US20100080255A1 (en) | 2008-09-29 | 2009-09-22 | Semiconductor laser device |
CN2009101789076A CN101714746B (zh) | 2008-09-29 | 2009-09-28 | 半导体激光装置 |
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JP2008250462A JP4657337B2 (ja) | 2008-09-29 | 2008-09-29 | 半導体レーザ装置 |
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JP2010080867A JP2010080867A (ja) | 2010-04-08 |
JP4657337B2 true JP4657337B2 (ja) | 2011-03-23 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5715332B2 (ja) * | 2009-08-31 | 2015-05-07 | 株式会社東芝 | 半導体発光素子 |
JP2012015266A (ja) * | 2010-06-30 | 2012-01-19 | Sony Corp | 半導体光増幅器 |
US9166369B2 (en) | 2013-04-09 | 2015-10-20 | Nlight Photonics Corporation | Flared laser oscillator waveguide |
WO2015002683A2 (en) | 2013-04-09 | 2015-01-08 | Nlight Photonics Corporation | Diode laser packages with flared laser oscillator waveguides |
US10186836B2 (en) | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
JP2017050318A (ja) * | 2015-08-31 | 2017-03-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN105720479B (zh) * | 2016-04-26 | 2019-03-22 | 中国科学院半导体研究所 | 一种具有光束扩散结构的高速半导体激光器 |
JP2018085468A (ja) * | 2016-11-25 | 2018-05-31 | ルネサスエレクトロニクス株式会社 | 半導体レーザ、光源ユニット及びレーザ光照射装置 |
CN106911078A (zh) * | 2017-02-17 | 2017-06-30 | 武汉光安伦光电技术有限公司 | 小发散角脊型激光器及其制作方法 |
US11837838B1 (en) * | 2020-01-31 | 2023-12-05 | Freedom Photonics Llc | Laser having tapered region |
Citations (4)
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JP2001015864A (ja) * | 1999-06-28 | 2001-01-19 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
JP2002319741A (ja) * | 2001-04-24 | 2002-10-31 | Nec Corp | 半導体光アンプおよび半導体レーザ |
US20040008746A1 (en) * | 2002-04-24 | 2004-01-15 | Berthold Schmidt | High power semiconductor laser diode and method for making such a diode |
JP2008066506A (ja) * | 2006-09-07 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
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JP3295570B2 (ja) * | 1994-12-27 | 2002-06-24 | 富士写真フイルム株式会社 | 集積化半導体レーザ装置 |
US6430204B1 (en) * | 1998-08-19 | 2002-08-06 | Hitachi, Ltd. | Semiconductor laser device and optical processing system using the device |
JP4077348B2 (ja) * | 2003-03-17 | 2008-04-16 | 松下電器産業株式会社 | 半導体レーザ装置およびそれを用いた光ピックアップ装置 |
US7301979B2 (en) * | 2003-05-22 | 2007-11-27 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser |
GB2409572B (en) * | 2003-12-24 | 2006-02-15 | Intense Photonics Ltd | Generating multiple bandgaps using multiple epitaxial layers |
JP4751024B2 (ja) * | 2004-01-16 | 2011-08-17 | シャープ株式会社 | 半導体レーザおよびその製造方法 |
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- 2008-09-29 JP JP2008250462A patent/JP4657337B2/ja active Active
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- 2009-09-22 US US12/564,552 patent/US20100080255A1/en not_active Abandoned
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001015864A (ja) * | 1999-06-28 | 2001-01-19 | Sharp Corp | 半導体レーザ素子およびその製造方法 |
JP2002319741A (ja) * | 2001-04-24 | 2002-10-31 | Nec Corp | 半導体光アンプおよび半導体レーザ |
US20040008746A1 (en) * | 2002-04-24 | 2004-01-15 | Berthold Schmidt | High power semiconductor laser diode and method for making such a diode |
JP2008066506A (ja) * | 2006-09-07 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
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CN101714746A (zh) | 2010-05-26 |
JP2010080867A (ja) | 2010-04-08 |
US20100080255A1 (en) | 2010-04-01 |
CN101714746B (zh) | 2012-02-29 |
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