JP4653029B2 - 熱伝導材料及びその製造方法 - Google Patents
熱伝導材料及びその製造方法 Download PDFInfo
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- JP4653029B2 JP4653029B2 JP2006182214A JP2006182214A JP4653029B2 JP 4653029 B2 JP4653029 B2 JP 4653029B2 JP 2006182214 A JP2006182214 A JP 2006182214A JP 2006182214 A JP2006182214 A JP 2006182214A JP 4653029 B2 JP4653029 B2 JP 4653029B2
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- 239000004020 conductor Substances 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 86
- 239000002041 carbon nanotube Substances 0.000 claims description 80
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 80
- 239000002861 polymer material Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000002470 thermal conductor Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 10
- 239000004205 dimethyl polysiloxane Substances 0.000 description 7
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 7
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 7
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 7
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000003522 acrylic cement Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001225 polyester resin Polymers 0.000 description 3
- 239000004645 polyester resin Substances 0.000 description 3
- -1 polyethylene terephthalate Polymers 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011807 nanoball Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Thermal Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
Savas Berber、「Unusually High Thermal Conductivity of Carbon Nanotubes」、「Phys. Rev.Lett」、第84巻、第4613頁、2000年
図1に示すように、熱伝導材料10は、それぞれ第一端部12A及びそれと反対の第二端部12Bを有する複数のカーボンナノチューブ12と、前記第一端部12Aを覆う熱流コレクタ(Heat Current Collector)13と、ポリマー材料15と、を含む。また、前記複数のカーボンナノチューブ12の間の空隙は、前記ポリマー材料15で充填されている。
実施例1は実施例2と類似する。図2に示すように、熱伝導材料20は、それぞれ第一端部12A及びそれと反対の第二端部12Bを有する複数のカーボンナノチューブ12と、熱流コレクタ13と、ポリマー材料15と、を含む。また、前記複数のカーボンナノチューブ12の間の空隙に、前記ポリマー材料15で充填されている。実施例1と異なる点は、前記第一端部12Aと前記第二端部12Bとが、それぞれ前記熱流コレクタ13で覆われることである。
本実施例において、熱伝導材料の製造方法を提供する。図3は、前記熱伝導材料の製造方法のフローチャートである。図3を参照すると、前記熱伝導材料の製造方法は、第一端部及び第二端部を有する複数のカーボンナノチューブを提供する第一段階と、前記第一端部及び/又は第二端部を熱流コレクタで覆う第二段階と、ポリマー材料を利用して前記複数のカーボンナノチューブの間の空隙を充填する第三段階と、を含む。次に、図4乃至図7を参照して本実施例の熱伝導材料の製造方法について詳しく説明する。
Rint=Rcont+d/k (1)
11 基材
12 カーボンナノチューブ
12A 第一端部
12B 第二端部
13 熱流コレクタ
15 ポリマー材料
Claims (4)
- 基材の上に、第一端部及び第二端部を有する複数のカーボンナノチューブでなるマトリックスを成長させる第一段階と、
前記第一端部及び/又は前記第二端部を熱流コレクタで覆う第二段階と、
ポリマー材料を利用して前記複数のカーボンナノチューブの間の空隙を充填する第三段階と、を含むことを特徴とする熱伝導体の製造方法。 - 前記第一段階では、前記基材の上に触媒層を形成し、高温で炭素を含むガスを導入して、複数のカーボンナノチューブでなるマトリックスを成長させることを特徴とする、請求項1に記載の熱伝導体の製造方法。
- 前記第二段階では、電子線堆積法で前記複数のカーボンナノチューブの第一端部及び/又は前記第二端部を覆うように金属膜を堆積させることを特徴とする、請求項1に記載の熱伝導体の製造方法。
- 前記第二段階では、前記金属膜が堆積された前記複数のカーボンナノチューブをアルゴン気体で焼鈍しをすることを特徴とする、請求項3に記載の熱伝導体の製造方法。
Applications Claiming Priority (1)
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CN2005100357522A CN1891780B (zh) | 2005-07-01 | 2005-07-01 | 热界面材料及其制备方法 |
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JP2007009213A JP2007009213A (ja) | 2007-01-18 |
JP4653029B2 true JP4653029B2 (ja) | 2011-03-16 |
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JP2006182214A Active JP4653029B2 (ja) | 2005-07-01 | 2006-06-30 | 熱伝導材料及びその製造方法 |
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US (1) | US8029900B2 (ja) |
JP (1) | JP4653029B2 (ja) |
CN (1) | CN1891780B (ja) |
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CN1891780A (zh) | 2007-01-10 |
JP2007009213A (ja) | 2007-01-18 |
CN1891780B (zh) | 2013-04-24 |
US8029900B2 (en) | 2011-10-04 |
US20100243227A1 (en) | 2010-09-30 |
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