JP4648900B2 - 基板からフォトレジストを除去する方法 - Google Patents

基板からフォトレジストを除去する方法 Download PDF

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Publication number
JP4648900B2
JP4648900B2 JP2006517288A JP2006517288A JP4648900B2 JP 4648900 B2 JP4648900 B2 JP 4648900B2 JP 2006517288 A JP2006517288 A JP 2006517288A JP 2006517288 A JP2006517288 A JP 2006517288A JP 4648900 B2 JP4648900 B2 JP 4648900B2
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Japan
Prior art keywords
substrate
layer
photoresist
etching
carbon
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006517288A
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English (en)
Japanese (ja)
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JP2006528418A (ja
JP2006528418A5 (enExample
Inventor
エリク， エー． エデルバーグ，
ロバート， ピー． チェビー，
グラディス， ソワン ロウ，
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Lam Research Corp
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Lam Research Corp
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Publication of JP2006528418A5 publication Critical patent/JP2006528418A5/ja
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Publication of JP4648900B2 publication Critical patent/JP4648900B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006517288A 2003-06-17 2004-06-15 基板からフォトレジストを除去する方法 Expired - Fee Related JP4648900B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/462,830 US7083903B2 (en) 2003-06-17 2003-06-17 Methods of etching photoresist on substrates
PCT/US2004/019054 WO2004111727A2 (en) 2003-06-17 2004-06-15 Methods of removing photoresist from substrates

Publications (3)

Publication Number Publication Date
JP2006528418A JP2006528418A (ja) 2006-12-14
JP2006528418A5 JP2006528418A5 (enExample) 2007-08-02
JP4648900B2 true JP4648900B2 (ja) 2011-03-09

Family

ID=33516986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006517288A Expired - Fee Related JP4648900B2 (ja) 2003-06-17 2004-06-15 基板からフォトレジストを除去する方法

Country Status (8)

Country Link
US (2) US7083903B2 (enExample)
EP (1) EP1644776A2 (enExample)
JP (1) JP4648900B2 (enExample)
KR (1) KR101052707B1 (enExample)
CN (1) CN1816773B (enExample)
MY (1) MY139113A (enExample)
TW (1) TWI364631B (enExample)
WO (1) WO2004111727A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7334918B2 (en) * 2003-05-07 2008-02-26 Bayco Products, Ltd. LED lighting array for a portable task light
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
JP4961805B2 (ja) * 2006-04-03 2012-06-27 株式会社デンソー 炭化珪素半導体装置の製造方法
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
JP5362176B2 (ja) * 2006-06-12 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7892978B2 (en) 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7807062B2 (en) 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7791055B2 (en) 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7569484B2 (en) * 2006-08-14 2009-08-04 Micron Technology, Inc. Plasma and electron beam etching device and method
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7935637B2 (en) * 2007-08-16 2011-05-03 International Business Machines Corporation Resist stripping methods using backfilling material layer
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
KR101598510B1 (ko) 2010-04-13 2016-03-02 지이 비디오 컴프레션, 엘엘씨 이미지들의 멀티-트리 서브-디비젼을 이용한 비디오 코딩
KR101942092B1 (ko) * 2012-07-30 2019-01-25 한국전자통신연구원 유기발광소자 제조방법
US9305771B2 (en) * 2013-12-20 2016-04-05 Intel Corporation Prevention of metal loss in wafer processing
US9469912B2 (en) * 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
CN104821273B (zh) * 2014-09-05 2017-11-28 武汉新芯集成电路制造有限公司 一种去除深孔蚀刻后沟槽内残留物的方法
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
CN105843001B (zh) * 2016-03-28 2020-03-24 武汉新芯集成电路制造有限公司 一种用于含碳多孔材料基底的光刻涂层的去除方法
US10675657B2 (en) * 2018-07-10 2020-06-09 Visera Technologies Company Limited Optical elements and method for fabricating the same
JP2023550603A (ja) * 2020-11-09 2023-12-04 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ プラズマ活性化液

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770524B2 (ja) 1987-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
US5145764A (en) 1990-04-10 1992-09-08 E. I. Du Pont De Nemours And Company Positive working resist compositions process of exposing, stripping developing
JP3038950B2 (ja) 1991-02-12 2000-05-08 ソニー株式会社 ドライエッチング方法
JPH05275326A (ja) * 1992-03-30 1993-10-22 Sumitomo Metal Ind Ltd レジストのアッシング方法
JPH06196454A (ja) * 1992-12-24 1994-07-15 Nippon Steel Corp レジスト膜の除去方法及び除去装置
JP3252518B2 (ja) 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
CN1072813C (zh) 1995-01-20 2001-10-10 科莱恩金融(Bvi)有限公司 正性光致抗蚀剂的显影方法和所用的组合物
US5824604A (en) 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US5811358A (en) * 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6024887A (en) * 1997-06-03 2000-02-15 Taiwan Semiconductor Manufacturing Company Plasma method for stripping ion implanted photoresist layers
US6051504A (en) 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
JPH1187313A (ja) * 1997-09-02 1999-03-30 Toshiba Corp プラズマ処理方法
US5872061A (en) 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6391786B1 (en) * 1997-12-31 2002-05-21 Lam Research Corporation Etching process for organic anti-reflective coating
KR19990070021A (ko) * 1998-02-16 1999-09-06 구본준 반도체 소자의 제조 방법
US6174451B1 (en) * 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
CN100377316C (zh) * 1998-05-12 2008-03-26 世界先进积体电路股份有限公司 形成多个不同深度接触窗的方法
US6380096B2 (en) 1998-07-09 2002-04-30 Applied Materials, Inc. In-situ integrated oxide etch process particularly useful for copper dual damascene
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000231202A (ja) * 1999-02-12 2000-08-22 Tokyo Ohka Kogyo Co Ltd レジストのアッシング方法
US20020033233A1 (en) * 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6767698B2 (en) * 1999-09-29 2004-07-27 Tokyo Electron Limited High speed stripping for damaged photoresist
JP2001308078A (ja) 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6391146B1 (en) * 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6362109B1 (en) 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
JP2002100613A (ja) * 2000-09-25 2002-04-05 Nec Kyushu Ltd アッシング方法およびアッシング装置
US6534921B1 (en) * 2000-11-09 2003-03-18 Samsung Electronics Co., Ltd. Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system
JP2002158210A (ja) 2000-11-20 2002-05-31 Shibaura Mechatronics Corp レジスト除去方法
US6841483B2 (en) 2001-02-12 2005-01-11 Lam Research Corporation Unique process chemistry for etching organic low-k materials
JP4078875B2 (ja) * 2002-05-08 2008-04-23 ソニー株式会社 有機膜パターンの形成方法及び固体撮像素子の製造方法
US6737675B2 (en) * 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
AU2003270735A1 (en) * 2002-09-18 2004-04-08 Mattson Technology, Inc. System and method for removing material
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US6849905B2 (en) * 2002-12-23 2005-02-01 Matrix Semiconductor, Inc. Semiconductor device with localized charge storage dielectric and method of making same
US20040214448A1 (en) * 2003-04-22 2004-10-28 Taiwan Semiconductor Manufacturing Co. Method of ashing a photoresist

Also Published As

Publication number Publication date
EP1644776A2 (en) 2006-04-12
WO2004111727A3 (en) 2005-07-07
US7083903B2 (en) 2006-08-01
JP2006528418A (ja) 2006-12-14
TWI364631B (en) 2012-05-21
TW200502718A (en) 2005-01-16
US20060201911A1 (en) 2006-09-14
CN1816773A (zh) 2006-08-09
KR20060010845A (ko) 2006-02-02
WO2004111727A2 (en) 2004-12-23
CN1816773B (zh) 2010-08-25
MY139113A (en) 2009-08-28
KR101052707B1 (ko) 2011-08-01
US20040256357A1 (en) 2004-12-23

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