TWI364631B - Methods of removing photoresist from substrates - Google Patents
Methods of removing photoresist from substrates Download PDFInfo
- Publication number
- TWI364631B TWI364631B TW093117509A TW93117509A TWI364631B TW I364631 B TWI364631 B TW I364631B TW 093117509 A TW093117509 A TW 093117509A TW 93117509 A TW93117509 A TW 93117509A TW I364631 B TWI364631 B TW I364631B
- Authority
- TW
- Taiwan
- Prior art keywords
- carbon
- layer
- photoresist
- substrate
- gas
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 102
- 238000000034 method Methods 0.000 title claims description 70
- 239000000758 substrate Substances 0.000 title claims description 70
- 239000007789 gas Substances 0.000 claims description 84
- 229910052799 carbon Inorganic materials 0.000 claims description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 70
- 238000012545 processing Methods 0.000 claims description 42
- 230000008569 process Effects 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 8
- 229910052707 ruthenium Inorganic materials 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 claims 1
- 238000006467 substitution reaction Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 238000002513 implantation Methods 0.000 description 7
- 229910010272 inorganic material Inorganic materials 0.000 description 7
- 239000011147 inorganic material Substances 0.000 description 7
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 230000001965 increasing effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 101100383789 Petunia hybrida CHSF gene Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000010985 leather Substances 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/462,830 US7083903B2 (en) | 2003-06-17 | 2003-06-17 | Methods of etching photoresist on substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200502718A TW200502718A (en) | 2005-01-16 |
| TWI364631B true TWI364631B (en) | 2012-05-21 |
Family
ID=33516986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093117509A TWI364631B (en) | 2003-06-17 | 2004-06-17 | Methods of removing photoresist from substrates |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7083903B2 (enExample) |
| EP (1) | EP1644776A2 (enExample) |
| JP (1) | JP4648900B2 (enExample) |
| KR (1) | KR101052707B1 (enExample) |
| CN (1) | CN1816773B (enExample) |
| MY (1) | MY139113A (enExample) |
| TW (1) | TWI364631B (enExample) |
| WO (1) | WO2004111727A2 (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7334918B2 (en) * | 2003-05-07 | 2008-02-26 | Bayco Products, Ltd. | LED lighting array for a portable task light |
| US20060051965A1 (en) * | 2004-09-07 | 2006-03-09 | Lam Research Corporation | Methods of etching photoresist on substrates |
| JP4961805B2 (ja) * | 2006-04-03 | 2012-06-27 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| US7605063B2 (en) * | 2006-05-10 | 2009-10-20 | Lam Research Corporation | Photoresist stripping chamber and methods of etching photoresist on substrates |
| JP5362176B2 (ja) * | 2006-06-12 | 2013-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US7892978B2 (en) | 2006-07-10 | 2011-02-22 | Micron Technology, Inc. | Electron induced chemical etching for device level diagnosis |
| US7807062B2 (en) | 2006-07-10 | 2010-10-05 | Micron Technology, Inc. | Electron induced chemical etching and deposition for local circuit repair |
| US7791055B2 (en) | 2006-07-10 | 2010-09-07 | Micron Technology, Inc. | Electron induced chemical etching/deposition for enhanced detection of surface defects |
| US7718080B2 (en) | 2006-08-14 | 2010-05-18 | Micron Technology, Inc. | Electronic beam processing device and method using carbon nanotube emitter |
| US7791071B2 (en) | 2006-08-14 | 2010-09-07 | Micron Technology, Inc. | Profiling solid state samples |
| US7569484B2 (en) * | 2006-08-14 | 2009-08-04 | Micron Technology, Inc. | Plasma and electron beam etching device and method |
| US7833427B2 (en) | 2006-08-14 | 2010-11-16 | Micron Technology, Inc. | Electron beam etching device and method |
| US7935637B2 (en) * | 2007-08-16 | 2011-05-03 | International Business Machines Corporation | Resist stripping methods using backfilling material layer |
| US8475673B2 (en) * | 2009-04-24 | 2013-07-02 | Lam Research Company | Method and apparatus for high aspect ratio dielectric etch |
| KR101598510B1 (ko) | 2010-04-13 | 2016-03-02 | 지이 비디오 컴프레션, 엘엘씨 | 이미지들의 멀티-트리 서브-디비젼을 이용한 비디오 코딩 |
| KR101942092B1 (ko) * | 2012-07-30 | 2019-01-25 | 한국전자통신연구원 | 유기발광소자 제조방법 |
| US9305771B2 (en) * | 2013-12-20 | 2016-04-05 | Intel Corporation | Prevention of metal loss in wafer processing |
| US9469912B2 (en) * | 2014-04-21 | 2016-10-18 | Lam Research Corporation | Pretreatment method for photoresist wafer processing |
| CN104821273B (zh) * | 2014-09-05 | 2017-11-28 | 武汉新芯集成电路制造有限公司 | 一种去除深孔蚀刻后沟槽内残留物的方法 |
| KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
| CN105843001B (zh) * | 2016-03-28 | 2020-03-24 | 武汉新芯集成电路制造有限公司 | 一种用于含碳多孔材料基底的光刻涂层的去除方法 |
| US10675657B2 (en) * | 2018-07-10 | 2020-06-09 | Visera Technologies Company Limited | Optical elements and method for fabricating the same |
| JP2023550603A (ja) * | 2020-11-09 | 2023-12-04 | ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ | プラズマ活性化液 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770524B2 (ja) | 1987-08-19 | 1995-07-31 | 富士通株式会社 | 半導体装置の製造方法 |
| US5145764A (en) | 1990-04-10 | 1992-09-08 | E. I. Du Pont De Nemours And Company | Positive working resist compositions process of exposing, stripping developing |
| JP3038950B2 (ja) | 1991-02-12 | 2000-05-08 | ソニー株式会社 | ドライエッチング方法 |
| JPH05275326A (ja) * | 1992-03-30 | 1993-10-22 | Sumitomo Metal Ind Ltd | レジストのアッシング方法 |
| JPH06196454A (ja) * | 1992-12-24 | 1994-07-15 | Nippon Steel Corp | レジスト膜の除去方法及び除去装置 |
| JP3252518B2 (ja) | 1993-03-19 | 2002-02-04 | ソニー株式会社 | ドライエッチング方法 |
| CN1072813C (zh) | 1995-01-20 | 2001-10-10 | 科莱恩金融(Bvi)有限公司 | 正性光致抗蚀剂的显影方法和所用的组合物 |
| US5824604A (en) | 1996-01-23 | 1998-10-20 | Mattson Technology, Inc. | Hydrocarbon-enhanced dry stripping of photoresist |
| US6184158B1 (en) * | 1996-12-23 | 2001-02-06 | Lam Research Corporation | Inductively coupled plasma CVD |
| US5811358A (en) * | 1997-01-03 | 1998-09-22 | Mosel Vitelic Inc. | Low temperature dry process for stripping photoresist after high dose ion implantation |
| US5786276A (en) | 1997-03-31 | 1998-07-28 | Applied Materials, Inc. | Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2 |
| US6024887A (en) * | 1997-06-03 | 2000-02-15 | Taiwan Semiconductor Manufacturing Company | Plasma method for stripping ion implanted photoresist layers |
| US6051504A (en) | 1997-08-15 | 2000-04-18 | International Business Machines Corporation | Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma |
| JPH1187313A (ja) * | 1997-09-02 | 1999-03-30 | Toshiba Corp | プラズマ処理方法 |
| US5872061A (en) | 1997-10-27 | 1999-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plasma etch method for forming residue free fluorine containing plasma etched layers |
| US6391786B1 (en) * | 1997-12-31 | 2002-05-21 | Lam Research Corporation | Etching process for organic anti-reflective coating |
| KR19990070021A (ko) * | 1998-02-16 | 1999-09-06 | 구본준 | 반도체 소자의 제조 방법 |
| US6174451B1 (en) * | 1998-03-27 | 2001-01-16 | Applied Materials, Inc. | Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons |
| CN100377316C (zh) * | 1998-05-12 | 2008-03-26 | 世界先进积体电路股份有限公司 | 形成多个不同深度接触窗的方法 |
| US6380096B2 (en) | 1998-07-09 | 2002-04-30 | Applied Materials, Inc. | In-situ integrated oxide etch process particularly useful for copper dual damascene |
| US6297163B1 (en) * | 1998-09-30 | 2001-10-02 | Lam Research Corporation | Method of plasma etching dielectric materials |
| US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
| JP2000231202A (ja) * | 1999-02-12 | 2000-08-22 | Tokyo Ohka Kogyo Co Ltd | レジストのアッシング方法 |
| US20020033233A1 (en) * | 1999-06-08 | 2002-03-21 | Stephen E. Savas | Icp reactor having a conically-shaped plasma-generating section |
| US6767698B2 (en) * | 1999-09-29 | 2004-07-27 | Tokyo Electron Limited | High speed stripping for damaged photoresist |
| JP2001308078A (ja) | 2000-02-15 | 2001-11-02 | Canon Inc | 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム |
| US6451703B1 (en) | 2000-03-10 | 2002-09-17 | Applied Materials, Inc. | Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas |
| US6391146B1 (en) * | 2000-04-11 | 2002-05-21 | Applied Materials, Inc. | Erosion resistant gas energizer |
| US6362109B1 (en) | 2000-06-02 | 2002-03-26 | Applied Materials, Inc. | Oxide/nitride etching having high selectivity to photoresist |
| US6440864B1 (en) * | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
| JP2002100613A (ja) * | 2000-09-25 | 2002-04-05 | Nec Kyushu Ltd | アッシング方法およびアッシング装置 |
| US6534921B1 (en) * | 2000-11-09 | 2003-03-18 | Samsung Electronics Co., Ltd. | Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system |
| JP2002158210A (ja) | 2000-11-20 | 2002-05-31 | Shibaura Mechatronics Corp | レジスト除去方法 |
| US6841483B2 (en) | 2001-02-12 | 2005-01-11 | Lam Research Corporation | Unique process chemistry for etching organic low-k materials |
| JP4078875B2 (ja) * | 2002-05-08 | 2008-04-23 | ソニー株式会社 | 有機膜パターンの形成方法及び固体撮像素子の製造方法 |
| US6737675B2 (en) * | 2002-06-27 | 2004-05-18 | Matrix Semiconductor, Inc. | High density 3D rail stack arrays |
| AU2003270735A1 (en) * | 2002-09-18 | 2004-04-08 | Mattson Technology, Inc. | System and method for removing material |
| US20070051471A1 (en) * | 2002-10-04 | 2007-03-08 | Applied Materials, Inc. | Methods and apparatus for stripping |
| US6849905B2 (en) * | 2002-12-23 | 2005-02-01 | Matrix Semiconductor, Inc. | Semiconductor device with localized charge storage dielectric and method of making same |
| US20040214448A1 (en) * | 2003-04-22 | 2004-10-28 | Taiwan Semiconductor Manufacturing Co. | Method of ashing a photoresist |
-
2003
- 2003-06-17 US US10/462,830 patent/US7083903B2/en not_active Expired - Lifetime
-
2004
- 2004-06-15 CN CN200480019282.4A patent/CN1816773B/zh not_active Expired - Fee Related
- 2004-06-15 JP JP2006517288A patent/JP4648900B2/ja not_active Expired - Fee Related
- 2004-06-15 KR KR1020057024226A patent/KR101052707B1/ko not_active Expired - Fee Related
- 2004-06-15 EP EP04776596A patent/EP1644776A2/en not_active Withdrawn
- 2004-06-15 WO PCT/US2004/019054 patent/WO2004111727A2/en not_active Ceased
- 2004-06-16 MY MYPI20042309A patent/MY139113A/en unknown
- 2004-06-17 TW TW093117509A patent/TWI364631B/zh not_active IP Right Cessation
-
2006
- 2006-05-09 US US11/429,959 patent/US20060201911A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| EP1644776A2 (en) | 2006-04-12 |
| WO2004111727A3 (en) | 2005-07-07 |
| US7083903B2 (en) | 2006-08-01 |
| JP2006528418A (ja) | 2006-12-14 |
| TW200502718A (en) | 2005-01-16 |
| US20060201911A1 (en) | 2006-09-14 |
| CN1816773A (zh) | 2006-08-09 |
| JP4648900B2 (ja) | 2011-03-09 |
| KR20060010845A (ko) | 2006-02-02 |
| WO2004111727A2 (en) | 2004-12-23 |
| CN1816773B (zh) | 2010-08-25 |
| MY139113A (en) | 2009-08-28 |
| KR101052707B1 (ko) | 2011-08-01 |
| US20040256357A1 (en) | 2004-12-23 |
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