KR101052707B1 - 기판으로부터 포토레지스트를 제거하는 방법 - Google Patents

기판으로부터 포토레지스트를 제거하는 방법 Download PDF

Info

Publication number
KR101052707B1
KR101052707B1 KR1020057024226A KR20057024226A KR101052707B1 KR 101052707 B1 KR101052707 B1 KR 101052707B1 KR 1020057024226 A KR1020057024226 A KR 1020057024226A KR 20057024226 A KR20057024226 A KR 20057024226A KR 101052707 B1 KR101052707 B1 KR 101052707B1
Authority
KR
South Korea
Prior art keywords
substrate
delete delete
photoresist
rich layer
carbon rich
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057024226A
Other languages
English (en)
Korean (ko)
Other versions
KR20060010845A (ko
Inventor
에릭 에이 에델버그
로버트 피 케비
글래디스 소완 로우
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20060010845A publication Critical patent/KR20060010845A/ko
Application granted granted Critical
Publication of KR101052707B1 publication Critical patent/KR101052707B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020057024226A 2003-06-17 2004-06-15 기판으로부터 포토레지스트를 제거하는 방법 Expired - Fee Related KR101052707B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/462,830 2003-06-17
US10/462,830 US7083903B2 (en) 2003-06-17 2003-06-17 Methods of etching photoresist on substrates
PCT/US2004/019054 WO2004111727A2 (en) 2003-06-17 2004-06-15 Methods of removing photoresist from substrates

Publications (2)

Publication Number Publication Date
KR20060010845A KR20060010845A (ko) 2006-02-02
KR101052707B1 true KR101052707B1 (ko) 2011-08-01

Family

ID=33516986

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057024226A Expired - Fee Related KR101052707B1 (ko) 2003-06-17 2004-06-15 기판으로부터 포토레지스트를 제거하는 방법

Country Status (8)

Country Link
US (2) US7083903B2 (enExample)
EP (1) EP1644776A2 (enExample)
JP (1) JP4648900B2 (enExample)
KR (1) KR101052707B1 (enExample)
CN (1) CN1816773B (enExample)
MY (1) MY139113A (enExample)
TW (1) TWI364631B (enExample)
WO (1) WO2004111727A2 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7334918B2 (en) * 2003-05-07 2008-02-26 Bayco Products, Ltd. LED lighting array for a portable task light
US20060051965A1 (en) * 2004-09-07 2006-03-09 Lam Research Corporation Methods of etching photoresist on substrates
JP4961805B2 (ja) * 2006-04-03 2012-06-27 株式会社デンソー 炭化珪素半導体装置の製造方法
US7605063B2 (en) * 2006-05-10 2009-10-20 Lam Research Corporation Photoresist stripping chamber and methods of etching photoresist on substrates
JP5362176B2 (ja) * 2006-06-12 2013-12-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7791055B2 (en) * 2006-07-10 2010-09-07 Micron Technology, Inc. Electron induced chemical etching/deposition for enhanced detection of surface defects
US7892978B2 (en) * 2006-07-10 2011-02-22 Micron Technology, Inc. Electron induced chemical etching for device level diagnosis
US7807062B2 (en) * 2006-07-10 2010-10-05 Micron Technology, Inc. Electron induced chemical etching and deposition for local circuit repair
US7569484B2 (en) * 2006-08-14 2009-08-04 Micron Technology, Inc. Plasma and electron beam etching device and method
US7718080B2 (en) 2006-08-14 2010-05-18 Micron Technology, Inc. Electronic beam processing device and method using carbon nanotube emitter
US7791071B2 (en) 2006-08-14 2010-09-07 Micron Technology, Inc. Profiling solid state samples
US7833427B2 (en) 2006-08-14 2010-11-16 Micron Technology, Inc. Electron beam etching device and method
US7935637B2 (en) * 2007-08-16 2011-05-03 International Business Machines Corporation Resist stripping methods using backfilling material layer
US8475673B2 (en) * 2009-04-24 2013-07-02 Lam Research Company Method and apparatus for high aspect ratio dielectric etch
LT3958573T (lt) 2010-04-13 2023-09-25 Ge Video Compression, Llc Vaizdo kodavimas naudojant kadrų multimedžių poskaidinius
KR101942092B1 (ko) * 2012-07-30 2019-01-25 한국전자통신연구원 유기발광소자 제조방법
US9305771B2 (en) * 2013-12-20 2016-04-05 Intel Corporation Prevention of metal loss in wafer processing
US9469912B2 (en) * 2014-04-21 2016-10-18 Lam Research Corporation Pretreatment method for photoresist wafer processing
CN104821273B (zh) * 2014-09-05 2017-11-28 武汉新芯集成电路制造有限公司 一种去除深孔蚀刻后沟槽内残留物的方法
KR102477302B1 (ko) 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
CN105843001B (zh) * 2016-03-28 2020-03-24 武汉新芯集成电路制造有限公司 一种用于含碳多孔材料基底的光刻涂层的去除方法
US10675657B2 (en) * 2018-07-10 2020-06-09 Visera Technologies Company Limited Optical elements and method for fabricating the same
CN116745884A (zh) * 2020-11-09 2023-09-12 伊利诺伊大学评议会 等离子体活化的液体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990070021A (ko) * 1998-02-16 1999-09-06 구본준 반도체 소자의 제조 방법
JP2001308078A (ja) 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム
JP2002158210A (ja) 2000-11-20 2002-05-31 Shibaura Mechatronics Corp レジスト除去方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770524B2 (ja) 1987-08-19 1995-07-31 富士通株式会社 半導体装置の製造方法
US5145764A (en) 1990-04-10 1992-09-08 E. I. Du Pont De Nemours And Company Positive working resist compositions process of exposing, stripping developing
JP3038950B2 (ja) 1991-02-12 2000-05-08 ソニー株式会社 ドライエッチング方法
JPH05275326A (ja) * 1992-03-30 1993-10-22 Sumitomo Metal Ind Ltd レジストのアッシング方法
JPH06196454A (ja) * 1992-12-24 1994-07-15 Nippon Steel Corp レジスト膜の除去方法及び除去装置
JP3252518B2 (ja) 1993-03-19 2002-02-04 ソニー株式会社 ドライエッチング方法
DE69612656T2 (de) 1995-01-20 2001-10-18 Clariant Finance (Bvi) Ltd., Road Town Verfahren zur entwicklung eines positiv arbeitenden fotoresists und entwicklungszusammensetzungen dafür
US5824604A (en) 1996-01-23 1998-10-20 Mattson Technology, Inc. Hydrocarbon-enhanced dry stripping of photoresist
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US5811358A (en) * 1997-01-03 1998-09-22 Mosel Vitelic Inc. Low temperature dry process for stripping photoresist after high dose ion implantation
US5786276A (en) 1997-03-31 1998-07-28 Applied Materials, Inc. Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2
US6024887A (en) * 1997-06-03 2000-02-15 Taiwan Semiconductor Manufacturing Company Plasma method for stripping ion implanted photoresist layers
US6051504A (en) 1997-08-15 2000-04-18 International Business Machines Corporation Anisotropic and selective nitride etch process for high aspect ratio features in high density plasma
JPH1187313A (ja) * 1997-09-02 1999-03-30 Toshiba Corp プラズマ処理方法
US5872061A (en) 1997-10-27 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Plasma etch method for forming residue free fluorine containing plasma etched layers
US6391786B1 (en) * 1997-12-31 2002-05-21 Lam Research Corporation Etching process for organic anti-reflective coating
US6174451B1 (en) * 1998-03-27 2001-01-16 Applied Materials, Inc. Oxide etch process using hexafluorobutadiene and related unsaturated hydrofluorocarbons
CN100377316C (zh) * 1998-05-12 2008-03-26 世界先进积体电路股份有限公司 形成多个不同深度接触窗的方法
US6380096B2 (en) 1998-07-09 2002-04-30 Applied Materials, Inc. In-situ integrated oxide etch process particularly useful for copper dual damascene
US6297163B1 (en) * 1998-09-30 2001-10-02 Lam Research Corporation Method of plasma etching dielectric materials
US6230651B1 (en) * 1998-12-30 2001-05-15 Lam Research Corporation Gas injection system for plasma processing
JP2000231202A (ja) * 1999-02-12 2000-08-22 Tokyo Ohka Kogyo Co Ltd レジストのアッシング方法
US20020033233A1 (en) * 1999-06-08 2002-03-21 Stephen E. Savas Icp reactor having a conically-shaped plasma-generating section
US6767698B2 (en) * 1999-09-29 2004-07-27 Tokyo Electron Limited High speed stripping for damaged photoresist
US6451703B1 (en) 2000-03-10 2002-09-17 Applied Materials, Inc. Magnetically enhanced plasma etch process using a heavy fluorocarbon etching gas
US6391146B1 (en) * 2000-04-11 2002-05-21 Applied Materials, Inc. Erosion resistant gas energizer
US6362109B1 (en) 2000-06-02 2002-03-26 Applied Materials, Inc. Oxide/nitride etching having high selectivity to photoresist
US6440864B1 (en) * 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
JP2002100613A (ja) * 2000-09-25 2002-04-05 Nec Kyushu Ltd アッシング方法およびアッシング装置
US6534921B1 (en) * 2000-11-09 2003-03-18 Samsung Electronics Co., Ltd. Method for removing residual metal-containing polymer material and ion implanted photoresist in atmospheric downstream plasma jet system
US6841483B2 (en) 2001-02-12 2005-01-11 Lam Research Corporation Unique process chemistry for etching organic low-k materials
JP4078875B2 (ja) * 2002-05-08 2008-04-23 ソニー株式会社 有機膜パターンの形成方法及び固体撮像素子の製造方法
US6737675B2 (en) * 2002-06-27 2004-05-18 Matrix Semiconductor, Inc. High density 3D rail stack arrays
AU2003270735A1 (en) * 2002-09-18 2004-04-08 Mattson Technology, Inc. System and method for removing material
US20070051471A1 (en) * 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US6849905B2 (en) * 2002-12-23 2005-02-01 Matrix Semiconductor, Inc. Semiconductor device with localized charge storage dielectric and method of making same
US20040214448A1 (en) * 2003-04-22 2004-10-28 Taiwan Semiconductor Manufacturing Co. Method of ashing a photoresist

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990070021A (ko) * 1998-02-16 1999-09-06 구본준 반도체 소자의 제조 방법
JP2001308078A (ja) 2000-02-15 2001-11-02 Canon Inc 有機物除去方法、半導体装置の製造方法及び有機物除去装置並びにシステム
JP2002158210A (ja) 2000-11-20 2002-05-31 Shibaura Mechatronics Corp レジスト除去方法

Also Published As

Publication number Publication date
JP4648900B2 (ja) 2011-03-09
US20060201911A1 (en) 2006-09-14
EP1644776A2 (en) 2006-04-12
TWI364631B (en) 2012-05-21
JP2006528418A (ja) 2006-12-14
CN1816773A (zh) 2006-08-09
CN1816773B (zh) 2010-08-25
MY139113A (en) 2009-08-28
WO2004111727A3 (en) 2005-07-07
WO2004111727A2 (en) 2004-12-23
US20040256357A1 (en) 2004-12-23
US7083903B2 (en) 2006-08-01
TW200502718A (en) 2005-01-16
KR20060010845A (ko) 2006-02-02

Similar Documents

Publication Publication Date Title
KR101052707B1 (ko) 기판으로부터 포토레지스트를 제거하는 방법
US20080182422A1 (en) Methods of etching photoresist on substrates
KR930010980B1 (ko) 유기물질 층의 제거방법
US5628871A (en) Method of removing resist mask and a method of manufacturing semiconductor device
US5316616A (en) Dry etching with hydrogen bromide or bromine
KR100738850B1 (ko) 플라즈마 에칭 챔버에 대한 다단계 세정
KR101342779B1 (ko) 포토레지스트 박리 챔버 및 기판 상의 포토레지스트를 식각하는 방법
US6693043B1 (en) Method for removing photoresist from low-k films in a downstream plasma system
JP5271267B2 (ja) エッチング処理を実行する前のマスク層処理方法
KR20070104589A (ko) 포토레지스트 및 에칭 찌거기의 저압 제거
US6136722A (en) Plasma etching method for forming hole in masked silicon dioxide
US20040214448A1 (en) Method of ashing a photoresist
US20050003310A1 (en) Etching process including plasma pretreatment for generating fluorine-free carbon-containing polymer on a photoresist pattern
KR101299661B1 (ko) 정규형 저유전율 유전체 재료 및/또는 다공형 저유전율유전체 재료의 존재 시 레지스트 스트립 방법
US20030068898A1 (en) Dry etching method for manufacturing processes of semiconductor devices
JP3921364B2 (ja) 半導体装置の製造方法
US7452660B1 (en) Method for resist strip in presence of low K dielectric material and apparatus for performing the same
US20020020431A1 (en) Method and apparatus for removing a mobile ion in a wafer
JPH07106310A (ja) ドライエッチング方法
JPH05267245A (ja) 半導体装置の製造方法
JPH0888216A (ja) アッシング方法
JPH07201817A (ja) 有機材料膜の剥離方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140709

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150707

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160712

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170712

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180712

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20190711

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20230726

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20230726