JP4647159B2 - 無電解めっき皮膜の形成方法 - Google Patents

無電解めっき皮膜の形成方法 Download PDF

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Publication number
JP4647159B2
JP4647159B2 JP2001288395A JP2001288395A JP4647159B2 JP 4647159 B2 JP4647159 B2 JP 4647159B2 JP 2001288395 A JP2001288395 A JP 2001288395A JP 2001288395 A JP2001288395 A JP 2001288395A JP 4647159 B2 JP4647159 B2 JP 4647159B2
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Japan
Prior art keywords
semiconductor substrate
electroless plating
film
electrode
plating
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Expired - Fee Related
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JP2001288395A
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English (en)
Japanese (ja)
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JP2003096573A (ja
JP2003096573A5 (enExample
Inventor
浩章 永久保
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
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Citizen Holdings Co Ltd
Citizen Watch Co Ltd
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Priority to JP2001288395A priority Critical patent/JP4647159B2/ja
Publication of JP2003096573A publication Critical patent/JP2003096573A/ja
Publication of JP2003096573A5 publication Critical patent/JP2003096573A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

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  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2001288395A 2001-09-21 2001-09-21 無電解めっき皮膜の形成方法 Expired - Fee Related JP4647159B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001288395A JP4647159B2 (ja) 2001-09-21 2001-09-21 無電解めっき皮膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001288395A JP4647159B2 (ja) 2001-09-21 2001-09-21 無電解めっき皮膜の形成方法

Publications (3)

Publication Number Publication Date
JP2003096573A JP2003096573A (ja) 2003-04-03
JP2003096573A5 JP2003096573A5 (enExample) 2008-07-10
JP4647159B2 true JP4647159B2 (ja) 2011-03-09

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Family Applications (1)

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JP2001288395A Expired - Fee Related JP4647159B2 (ja) 2001-09-21 2001-09-21 無電解めっき皮膜の形成方法

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JP (1) JP4647159B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5707709B2 (ja) 2009-03-23 2015-04-30 富士電機株式会社 半導体装置の製造方法
JP5678698B2 (ja) * 2011-02-01 2015-03-04 トヨタ自動車株式会社 触媒微粒子の製造方法
JP5664370B2 (ja) * 2011-03-16 2015-02-04 トヨタ自動車株式会社 触媒微粒子の製造方法
JP5736945B2 (ja) * 2011-05-12 2015-06-17 トヨタ自動車株式会社 部分的にめっきをおこなう方法
JP5733150B2 (ja) * 2011-10-13 2015-06-10 株式会社デンソー 半導体装置の製造方法
JP6273971B2 (ja) * 2014-03-31 2018-02-07 三菱マテリアル株式会社 放熱板付パワーモジュール用基板の製造方法
JP6390481B2 (ja) * 2015-03-19 2018-09-19 三菱マテリアル株式会社 めっき付きパワーモジュール用基板の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62250178A (ja) * 1986-04-22 1987-10-31 Oki Electric Ind Co Ltd 無電解めつきの初期析出方法
JPH03215676A (ja) * 1990-01-20 1991-09-20 Tokin Corp 無電解めっき剤，及びそれを用いた無電解めっき方法
JP3726500B2 (ja) * 1997-07-28 2005-12-14 株式会社日立製作所 配線板及びその製造方法並びに無電解めっき方法
JPH11214421A (ja) * 1997-10-13 1999-08-06 Matsushita Electric Ind Co Ltd 半導体素子の電極形成方法
JP2000038682A (ja) * 1998-07-24 2000-02-08 Fujitsu Ltd ニッケルめっき方法及び半導体装置
JP4523106B2 (ja) * 2000-02-29 2010-08-11 東芝テック株式会社 無電解メッキ方法、インクジェットヘッドの製造方法および電極基板

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JP2003096573A (ja) 2003-04-03

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