JP4644696B2 - 裏面照射型撮像素子及びその製造方法 - Google Patents

裏面照射型撮像素子及びその製造方法 Download PDF

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Publication number
JP4644696B2
JP4644696B2 JP2007143804A JP2007143804A JP4644696B2 JP 4644696 B2 JP4644696 B2 JP 4644696B2 JP 2007143804 A JP2007143804 A JP 2007143804A JP 2007143804 A JP2007143804 A JP 2007143804A JP 4644696 B2 JP4644696 B2 JP 4644696B2
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Japan
Prior art keywords
semiconductor substrate
side element
substrate
constituent layer
support substrate
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Expired - Fee Related
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JP2007143804A
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English (en)
Japanese (ja)
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JP2008300551A (ja
JP2008300551A5 (enExample
Inventor
眞司 宇家
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Fujifilm Corp
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Fujifilm Corp
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2007143804A priority Critical patent/JP4644696B2/ja
Priority to US12/126,592 priority patent/US7893516B2/en
Publication of JP2008300551A publication Critical patent/JP2008300551A/ja
Publication of JP2008300551A5 publication Critical patent/JP2008300551A5/ja
Priority to US13/007,482 priority patent/US8158452B2/en
Application granted granted Critical
Publication of JP4644696B2 publication Critical patent/JP4644696B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations

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  • Solid State Image Pick-Up Elements (AREA)
JP2007143804A 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法 Expired - Fee Related JP4644696B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007143804A JP4644696B2 (ja) 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法
US12/126,592 US7893516B2 (en) 2007-05-30 2008-05-23 Backside-illuminated imaging device and manufacturing method of the same
US13/007,482 US8158452B2 (en) 2007-05-30 2011-01-14 Backside-illuminated imaging device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007143804A JP4644696B2 (ja) 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008300551A JP2008300551A (ja) 2008-12-11
JP2008300551A5 JP2008300551A5 (enExample) 2010-08-26
JP4644696B2 true JP4644696B2 (ja) 2011-03-02

Family

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Family Applications (1)

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JP2007143804A Expired - Fee Related JP4644696B2 (ja) 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法

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US (2) US7893516B2 (enExample)
JP (1) JP4644696B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5644096B2 (ja) * 2009-11-30 2014-12-24 ソニー株式会社 接合基板の製造方法及び固体撮像装置の製造方法
JP2013175540A (ja) * 2012-02-24 2013-09-05 Nikon Corp 固体撮像装置および固体撮像装置の製造方法
JP6328025B2 (ja) * 2014-10-10 2018-05-23 キヤノン株式会社 シリコン基板の加工方法、液体吐出ヘッド用基板の製造方法、および液体吐出ヘッドの製造方法
US20200144314A1 (en) * 2018-11-05 2020-05-07 Varex Imaging Corporation Detector architecture using photodetector substrates and semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350068A (ja) 1993-06-03 1994-12-22 Hamamatsu Photonics Kk 半導体エネルギー線検出器の製造方法
JP3925752B2 (ja) * 1997-08-08 2007-06-06 日立化成工業株式会社 バンプ付き配線基板及び半導体パッケ−ジの製造法
AU3837200A (en) * 1999-04-13 2000-11-14 Hamamatsu Photonics K.K. Semiconductor device
JP2001308092A (ja) * 2000-04-18 2001-11-02 Toyo Kohan Co Ltd 半導体ウェハ上の配線形成に用いる金属積層板、および半導体ウェハ上への配線形成方法
WO2003096427A1 (fr) 2002-05-10 2003-11-20 Hamamatsu Photonics K.K. Reseau de photodiode d'irradiation de face arriere et procede de production d'un tel reseau
JP4220817B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
JP4389626B2 (ja) 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
JP4720120B2 (ja) 2004-07-14 2011-07-13 ソニー株式会社 半導体イメージセンサ・モジュール

Also Published As

Publication number Publication date
US20080296720A1 (en) 2008-12-04
US20110111547A1 (en) 2011-05-12
US7893516B2 (en) 2011-02-22
US8158452B2 (en) 2012-04-17
JP2008300551A (ja) 2008-12-11

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