JP2008300551A5 - - Google Patents

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Publication number
JP2008300551A5
JP2008300551A5 JP2007143804A JP2007143804A JP2008300551A5 JP 2008300551 A5 JP2008300551 A5 JP 2008300551A5 JP 2007143804 A JP2007143804 A JP 2007143804A JP 2007143804 A JP2007143804 A JP 2007143804A JP 2008300551 A5 JP2008300551 A5 JP 2008300551A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
side element
constituent layer
support substrate
element constituent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007143804A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008300551A (ja
JP4644696B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2007143804A priority Critical patent/JP4644696B2/ja
Priority claimed from JP2007143804A external-priority patent/JP4644696B2/ja
Priority to US12/126,592 priority patent/US7893516B2/en
Publication of JP2008300551A publication Critical patent/JP2008300551A/ja
Publication of JP2008300551A5 publication Critical patent/JP2008300551A5/ja
Priority to US13/007,482 priority patent/US8158452B2/en
Application granted granted Critical
Publication of JP4644696B2 publication Critical patent/JP4644696B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007143804A 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法 Expired - Fee Related JP4644696B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007143804A JP4644696B2 (ja) 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法
US12/126,592 US7893516B2 (en) 2007-05-30 2008-05-23 Backside-illuminated imaging device and manufacturing method of the same
US13/007,482 US8158452B2 (en) 2007-05-30 2011-01-14 Backside-illuminated imaging device and manufacturing method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007143804A JP4644696B2 (ja) 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008300551A JP2008300551A (ja) 2008-12-11
JP2008300551A5 true JP2008300551A5 (enExample) 2010-08-26
JP4644696B2 JP4644696B2 (ja) 2011-03-02

Family

ID=40087184

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007143804A Expired - Fee Related JP4644696B2 (ja) 2007-05-30 2007-05-30 裏面照射型撮像素子及びその製造方法

Country Status (2)

Country Link
US (2) US7893516B2 (enExample)
JP (1) JP4644696B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5644096B2 (ja) * 2009-11-30 2014-12-24 ソニー株式会社 接合基板の製造方法及び固体撮像装置の製造方法
JP2013175540A (ja) * 2012-02-24 2013-09-05 Nikon Corp 固体撮像装置および固体撮像装置の製造方法
JP6328025B2 (ja) * 2014-10-10 2018-05-23 キヤノン株式会社 シリコン基板の加工方法、液体吐出ヘッド用基板の製造方法、および液体吐出ヘッドの製造方法
US20200144314A1 (en) * 2018-11-05 2020-05-07 Varex Imaging Corporation Detector architecture using photodetector substrates and semiconductor devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06350068A (ja) 1993-06-03 1994-12-22 Hamamatsu Photonics Kk 半導体エネルギー線検出器の製造方法
JP3925752B2 (ja) * 1997-08-08 2007-06-06 日立化成工業株式会社 バンプ付き配線基板及び半導体パッケ−ジの製造法
AU3837200A (en) * 1999-04-13 2000-11-14 Hamamatsu Photonics K.K. Semiconductor device
JP2001308092A (ja) * 2000-04-18 2001-11-02 Toyo Kohan Co Ltd 半導体ウェハ上の配線形成に用いる金属積層板、および半導体ウェハ上への配線形成方法
WO2003096427A1 (fr) 2002-05-10 2003-11-20 Hamamatsu Photonics K.K. Reseau de photodiode d'irradiation de face arriere et procede de production d'un tel reseau
JP4220817B2 (ja) * 2003-03-27 2009-02-04 浜松ホトニクス株式会社 ホトダイオードアレイおよびその製造方法並びに放射線検出器
JP4389626B2 (ja) 2004-03-29 2009-12-24 ソニー株式会社 固体撮像素子の製造方法
JP4720120B2 (ja) 2004-07-14 2011-07-13 ソニー株式会社 半導体イメージセンサ・モジュール

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