JP4640345B2 - 電力用半導体装置 - Google Patents

電力用半導体装置 Download PDF

Info

Publication number
JP4640345B2
JP4640345B2 JP2007014734A JP2007014734A JP4640345B2 JP 4640345 B2 JP4640345 B2 JP 4640345B2 JP 2007014734 A JP2007014734 A JP 2007014734A JP 2007014734 A JP2007014734 A JP 2007014734A JP 4640345 B2 JP4640345 B2 JP 4640345B2
Authority
JP
Japan
Prior art keywords
conductor
semiconductor element
hole
solder
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007014734A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008182074A (ja
JP2008182074A5 (enExample
Inventor
泰成 日野
泰 中島
功治 平岡
治雄 高尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2007014734A priority Critical patent/JP4640345B2/ja
Publication of JP2008182074A publication Critical patent/JP2008182074A/ja
Publication of JP2008182074A5 publication Critical patent/JP2008182074A5/ja
Application granted granted Critical
Publication of JP4640345B2 publication Critical patent/JP4640345B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2007014734A 2007-01-25 2007-01-25 電力用半導体装置 Active JP4640345B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007014734A JP4640345B2 (ja) 2007-01-25 2007-01-25 電力用半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007014734A JP4640345B2 (ja) 2007-01-25 2007-01-25 電力用半導体装置

Publications (3)

Publication Number Publication Date
JP2008182074A JP2008182074A (ja) 2008-08-07
JP2008182074A5 JP2008182074A5 (enExample) 2008-12-25
JP4640345B2 true JP4640345B2 (ja) 2011-03-02

Family

ID=39725733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007014734A Active JP4640345B2 (ja) 2007-01-25 2007-01-25 電力用半導体装置

Country Status (1)

Country Link
JP (1) JP4640345B2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137506A (zh) * 2011-11-25 2013-06-05 三菱电机株式会社 接合方法以及半导体装置的制造方法
DE112016005807T5 (de) 2015-12-16 2018-09-27 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011086743A (ja) * 2009-10-15 2011-04-28 Mitsubishi Electric Corp 電力用半導体装置、及び該電力用半導体装置の製造方法
JP5702937B2 (ja) 2010-03-12 2015-04-15 株式会社日立製作所 半導体装置
JP5521771B2 (ja) * 2010-05-21 2014-06-18 株式会社デンソー 半導体モジュールおよびその製造方法
JP2012069640A (ja) * 2010-09-22 2012-04-05 Toshiba Corp 半導体装置及び電力用半導体装置
JP5813963B2 (ja) 2011-02-28 2015-11-17 ローム株式会社 半導体装置、および、半導体装置の実装構造
EP2698817B1 (en) 2011-08-10 2018-10-24 Fuji Electric Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP5545306B2 (ja) * 2012-02-15 2014-07-09 株式会社デンソー 電子装置
US9653390B2 (en) 2012-09-04 2017-05-16 Mitsubishi Electric Corporation Semiconductor device and semiconductor device manufacturing method
JP5910456B2 (ja) * 2012-10-22 2016-04-27 株式会社豊田自動織機 半導体装置
US10157865B2 (en) 2013-03-08 2018-12-18 Mitsubishi Electric Corporation Semiconductor device with metal film and method for manufacturing semiconductor device with metal film
WO2016189643A1 (ja) 2015-05-26 2016-12-01 三菱電機株式会社 半導体装置の製造方法
JP6162764B2 (ja) * 2015-09-17 2017-07-12 ローム株式会社 半導体装置、および、半導体装置の実装構造
JP6721329B2 (ja) 2015-12-21 2020-07-15 三菱電機株式会社 パワー半導体装置およびその製造方法
DE112016007417T5 (de) 2016-11-08 2019-07-25 Mitsubishi Electric Corporation Halbleitervorrichtung
CN108109983B (zh) * 2017-12-14 2024-05-10 常州星海电子股份有限公司 一种汽车专用整流二极管结构
JP6936310B2 (ja) * 2018-02-27 2021-09-15 新電元工業株式会社 半導体装置及び半導体装置の製造方法
JP7042651B2 (ja) * 2018-02-28 2022-03-28 三菱電機株式会社 電力用半導体装置および電力変換装置
DE112018007782T5 (de) * 2018-06-29 2021-04-01 Mitsubishi Electric Corporation Halbleitervorrichtung
JP7156155B2 (ja) * 2019-04-19 2022-10-19 三菱電機株式会社 半導体モジュール
DE112019007795B4 (de) 2019-10-08 2025-02-06 Mitsubishi Electric Corp. Halbleitervorrichtung
WO2021075016A1 (ja) * 2019-10-17 2021-04-22 三菱電機株式会社 半導体装置および半導体装置の製造方法
CN118039508B (zh) * 2024-04-12 2024-06-14 无锡利普思半导体有限公司 功率模块内部连接工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119665A (ja) * 1982-01-11 1983-07-16 Hitachi Ltd 半導体装置及びその製法
JP2003218305A (ja) * 2002-01-18 2003-07-31 Sanken Electric Co Ltd 半導体装置
JP2003318349A (ja) * 2002-04-22 2003-11-07 Nec Corp 半導体装置
JP4078993B2 (ja) * 2003-01-27 2008-04-23 三菱電機株式会社 半導体装置
JP4281050B2 (ja) * 2003-03-31 2009-06-17 株式会社デンソー 半導体装置
JP2006060106A (ja) * 2004-08-23 2006-03-02 Origin Electric Co Ltd リード部材及び表面実装型半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103137506A (zh) * 2011-11-25 2013-06-05 三菱电机株式会社 接合方法以及半导体装置的制造方法
US9087778B2 (en) 2011-11-25 2015-07-21 Mitsubishi Electric Corporation Joining method and semiconductor device manufacturing method
CN103137506B (zh) * 2011-11-25 2016-02-10 三菱电机株式会社 接合方法以及半导体装置的制造方法
DE112016005807T5 (de) 2015-12-16 2018-09-27 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben
DE112016005807B4 (de) 2015-12-16 2024-05-08 Mitsubishi Electric Corporation Halbleitereinheit und Verfahren zur Herstellung derselben

Also Published As

Publication number Publication date
JP2008182074A (ja) 2008-08-07

Similar Documents

Publication Publication Date Title
JP4640345B2 (ja) 電力用半導体装置
US9673118B2 (en) Power module and method of manufacturing power module
JP4438489B2 (ja) 半導体装置
US10553559B2 (en) Power semiconductor device
US8610263B2 (en) Semiconductor device module
WO2016136457A1 (ja) パワーモジュール
JP6945418B2 (ja) 半導体装置および半導体装置の製造方法
JP2007184525A (ja) 電子機器装置
US20240203841A1 (en) Novel packaging structure of power semiconductor module
WO2014097798A1 (ja) 半導体装置
JP2013069782A (ja) 半導体装置
JP6261642B2 (ja) 電力半導体装置
JP2022165251A (ja) 電力半導体装置、電力半導体装置の製造方法及び電力変換装置
JP2024013570A (ja) 半導体装置、半導体装置の製造方法および電力変換装置
US11735557B2 (en) Power module of double-faced cooling
JP5217015B2 (ja) 電力変換装置及びその製造方法
KR20140130862A (ko) 파워모듈 제조방법 및 이를 통해 재조된 고방열 파워모듈
JP2018133448A (ja) 半導体装置
JP2011023748A (ja) 電子機器装置
JP5195828B2 (ja) 半導体装置
JP2015149363A (ja) 半導体モジュール
JP7760399B2 (ja) 半導体装置
JP7118205B1 (ja) 半導体装置及びそれを用いた半導体モジュール
JP4861200B2 (ja) パワーモジュール
JP2019067976A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081111

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081111

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090515

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100824

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101004

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20101102

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20101115

R151 Written notification of patent or utility model registration

Ref document number: 4640345

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131210

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250